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IKD10N60RFATMA1
IGBT, 20 A, 2.2 V, 150 W, 600 V, TO-252 (DPAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 150W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-252 (DPAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 20A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.435 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## IKD10N60RF
## TRENCHSTOP[TM]
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Features: C<br>TRENCHSTOP [TM] Reverse Conducting (RC) technology for 600V<br>applications offering<br>¢ Optimized Eon, Eoff and Qrr for low switching losses<br>G<br>¢ Operating range of 4 to 30kHz<br>E<br>* Smooth switching performance leading to low EMI levels<br>* Very tight parameter distribution<br>* Maximum junction temperature 175°C<br>¢ Short circuit capability of 5us C<br>¢ Best in class current versus package size performance<br>* Qualified according to JEDEC for target applications i<br>¢ Pb-free lead plating; ROHS compliant (solder temperature “Cp heap<br>http://www.infineon.com/igbt/ S =<br>Complete product spectrum and PSpice Models: | ay<br>G<br>Applications:<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD10N60RF|600V|10A|2.2V|175°C|K10R60F|PG-TO252-3|
Datasheet www.infineon.com
2017-09-26
IKD10N60RF
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
IKD10N60RF
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||20.0<br>10.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||30.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||30.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||20.0<br>10.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||30.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_c=25°C|_P_tot||150.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|1.00|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|2.60|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
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Datasheet
IKD10N60RF
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=10.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.20<br>2.30|2.50<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=10.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.10<br>2.00|2.40<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.17mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current1)|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>1000|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=10.0A|-|4.6|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|655|-|pF|
|Output capacitance|_C_oes||-|37|-||
|Reverse transfer capacitance|_C_res||-|22|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=10.0A,<br>_V_GE=15V|-|64.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=25°C|-|74|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=26.0Ω,_R_G(off)=26.0Ω,<br>_L_σ=50nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E|-|12|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|168|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|0.19|-|mJ|
|Turn-off energy|_E_off||-|0.16|-|mJ|
|Total switchingenergy|_E_ts||-|0.35|-|mJ|
1) Not subject to production test - verified by design/characterization
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Datasheet
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=750A/µs|-|72|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.27|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|9.1|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-146|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=26.0Ω,_R_G(off)=26.0Ω,<br>_L_σ=50nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E|-|12|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|178|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.31|-|mJ|
|Turn-off energy|_E_off||-|0.21|-|mJ|
|Total switchingenergy|_E_ts||-|0.52|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=720A/µs|-|112|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.62|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|12.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-136|-|A/µs|
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Datasheet
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IKD10N60RF
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
10<br>9<br>ul a<br>8<br>HSN 10 A<br>Baill pfAt<br>x: 7 n t a o n e nNNI x| PTE ST not for linear use Et EHH E EHHEtt<br>6 6 oo m<br>a CTT UWPTI TTT Ga oeSE rS||<br>C 5 | ee ee<br>(e) (e)<br>8 4 LUA EAM TM 1 LETITIA<br>SL ELT<br>O 3 TTILUM fe)O aeeeee el<br>fe)- a a allNII 2- aeeRRS Saas<br>2<br>CALL<br>1 O) — oooonioooth<br>0 0.1<br>0.1 1 10 100 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V)<br>( T vj ≤ 175°C, T a =55°C, D =0.5, V CE=400V,<br>V GE =15/0V, r G=26 Ω , PCB mounting with<br>thermal vias and heatsink, see Appnote:<br>www.infineon.com/igbt)<br>160<br>20<br>140<br>18<br>ttt CREE<br>120<br>16<br>Pe) No N o<br>g 100 Ne 14 EN<br>- zZoa :<br>12<br>|D 80 EASEOo EAA<br>10<br>: : es | | | IN | |<br>: 60 \ Bf 8 A<br>. oO<br>: \ ie ee<br>6<br>40<br>4<br>IN - PN<br>20<br>\ aw<br>2<br>0 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 3. Power dissipation as a function of case Figure 4. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>
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IKD10N60RF
## ~~—RG-DrivesFastSeriles~~ TRENCHSTOP[TM] ~~#8 ©~~
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30 30<br>VGE = 20V VGE = 20V<br>17V 17V<br>25 ee 25 Lee<br>ae ee,<br>15V 15V<br>13V 13V<br>20 20<br>11V 11V<br>9V 9V<br>7V 7V<br>15 15<br>10 10<br>5 5<br>0 0<br>0 1 2 3 4 0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T vj=25°C) ( T vj=175°C)<br>30 4.0<br>Tj = 25°C IC = 1A<br>Tj = 175°C IC = 5A<br>3.5 IC = 10A<br>25 Esa—T h = E IC = 20A TOE<br>ee 3.0<br>e 20 y e e<br>2.5<br>eee:<br>ep) 15 ff BL 2.0 Reo<br>1.5<br>/PaPeoa 10 es SSSa<br>Br 8 1.0 eee<br>a<br>5<br>0.5<br>eA<br>0 fe 7eee 0.0<br>4 6 8 10 12 14 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Figure 8.<br>( Typical V CE=10V) transfer characteristic rypicat on of junction tompersture voltage as<br>( V GE=15V)<br>I C I C<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Datasheet
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IKD10N60RF
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1000<br>a a — |1 td(off) ee——— es ee ee ee<br>tf<br>ee td(on) a<br>tr<br>100 F |i ttd(off)f e ee P| [t] eae [eed] tT | tf<br>1 td(on) a aee ee Va<br>ne S tr SS e 100 e<br>g f o eg (SSSR<br>OQ@ post~~ emo e d OQ8 poESSER| ee a]<br>10<br>10<br>- a a a [FF<br>a es t+ tt tt tt tt<br>a ee ee ee ee eee a<br>a ee<br>FO a<br>1 1<br>5.0 7.5 10.0 12.5 15.0 17.5 20.0 0 10 20 30 40 50 60 70 80 90 100 110<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=26 Ω , Dynamic test circuit in V GE =15/0V, I C =10A, Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
7<br>td(off) typ.<br>tf min.<br>td(on) max.<br>es tr O 6 _<br>= ~T~S<br>cry fe) 5 ts<br>100<br>7 $= :<br>Ww a ee ee ee o oe<br>= a ee ee 1 —<br>F a ee ee ~~ ><br>4<br>9zs a eeee = — ae<br>Ee {| | | of e aL<br>s fo) EE 3 PSL<br>| | | | | | | ==<br>oO<br>5 2 PF} dtl.<br>10 1<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11.
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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V,<br>I C =10A, r G=26 , Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 12.
( _I_ C=0,17mA)
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IKD10N60RF
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1.2 1.0<br>Eoff Eoff<br>Eon Eon =<br>(ee ee | a<br>Ets Y Ets vy?<br>1.0<br>“ 0.8 m r]<br>ee | pe<br>E ee eef E UZ “<br>nm nm<br>7)io) 0.8 7 Z 7)io) 7“<br>—!2 ee7 —! 0.6 eeeZ<br>><br>7<br>2 0.6 eeZ a<br>7 ae ee<br>ee via —<br><=2 4 ee7 a<=2 0.4 eea<br>0.4<br>eT eT Cee<br>a an : a<br>ae ee ee ee<br>- =a -<br>0.2<br>ee 0.2 Zz 1 | ee eee<br>eT | | | |<br>0.0 0.0<br>5.0 7.5 10.0 12.5 15.0 17.5 20.0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=26 Ω , Dynamic test circuit in V GE =15/0V, I C =10A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
0.6 0.8<br>Eoff Eoff<br>Eon Eon<br>Ets 0.7 Ets<br>0.5<br>0.6<br>nm “7 nm ec<br>7)o 0.4 vie -7 7)ep) co “7<br>0.5<br>4 - aa) Poa<br>> > -7<br>w —_ ow eo<br>0.3 0.4<br>oO Oo a_<br>Zz _- Zz 0.3 =<br>ep 0.2 Leo| | =<br>ee<br>ae = 0.2 |- _<br>0.1<br>0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 300 325 350 375 400 425 450<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V,<br>I C =10A, r G=26 , Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br>
(inductive load, _T_ vj =175°C, _V_ GE=15/0V, _I_ C =10A, _r_ G=26 , Dynamic test circuit in Figure E)
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## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
16 Cs 1000 a a<br>— V CC = 120V / a es<br>V CC<br>== 2 480v / a a<br>14 —_— 7 Poa a<br>Cies<br>12 Coes<br>uw Cres<br>S 7 / = + ++<br>: et e<br>H 10 & fl<br>Fei 8 P| z— 100 a|i A<br>E= 9 Eeeeee<br>< a ee<br>ul a a Ne ee<br>6<br>b ° PONSRee ee<br>4<br>2<br>0 10<br>0 10 20 30 40 50 60 70 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=10A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>160 12<br>140<br>10<br>Zzi Dn— \ EE EL Ly<br>Ww= SERRE =e PRE \<br>120<br>: vile LIN EE<br>Q<br>o 8<br>e: 100 PPT yyy e PENT<br>rs : lele ti} ALLLi<br>PeLo bo2 Go<br>3 80 ZL = 6 \<br>E a)<br>a) O<br>OETT 60 JTTT TTT owys CEEEN TT<br>4<br>g fy 5s ttt} ALLL<br>ocSL 40 Lo (e)et] Pe EA\<br>a 7p)<br>fo) 7 x \<br>2<br>sree 20 yy ye PEN<br>0 0<br>12 14 16 18 20 10 11 12 13 14 15 16 17 18 19<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>I C(SC) t SC<br>**----- End of picture text -----**<br>
Figure 19.
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**----- Start of picture text -----**<br>
( V CE 400V, start at T vj=25°C)<br>**----- End of picture text -----**<br>
Figure 20.
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**----- Start of picture text -----**<br>
( V CE 400V, start at T vj=150°C)<br>**----- End of picture text -----**<br>
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## IKD10N60RF
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1<br>hnPtH eee tere WT<br>tee Mo<br>Ww_=z Aeecn eySALI]An) A | Ww 1 COMICaTT Sit]Ta i ST| TT<br>D = 0.5 D = 0.5<br>ge 0.2 2 HE 0.2<br>< ALA II lll < SS SER<br>0.1 0.1<br>0.05 0.05<br>ae 0.02 ain 0.02<br>: 0.1 ea<br>or Py Ml Za 0.01 Se aUiibe 0.01<br>uux iHH a ZaeaeAl CUTErTh oruw alll piali]f | |<br>E YI724IT ee TT’ | single pulse || ro 0.1 \| [ single pulse<br>Zz a Te rH<br>WwBB BEDTM |LTAJ jAAVaY Y W PaWe IE UU| ZzLu |Co a TT TTAae OeY ,<br>SUN W 4 wile - Do ee AM 7<br>© IAT) om | ae aa mi<br>TIC Lette ete ee nt I ee, ott<br>cael i Rema CM a I UIT TT<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.0972 0.4393 0.3919 0.0443 ri[K/W]: 0.3192 1.604 0.6161 0.0732<br>τ i[s]: 1.1E-4 4.5E-4 2.0E-3 0.03487 τ i[s]: 6.4E-5 2.6E-4 1.6E-3 0.021807<br>0.01 Weald a 0.01 fi a<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
Figure 21.
( _D_ = _t_ p/T)
Figure 22.
( _D_ = _t_ p/T)
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**----- Start of picture text -----**<br>
150<br>Tj = 25°C, IF = 10A<br>Tj = 175°C, IF = 10A<br>et<br>125<br>BEz PreyeroR yyy<br>100<br>PSCCOCES<br>Ww2 | oN) |<br>> ‘<br>75<br>ore AGN\<br>Bf NSC<br>50<br>es ee\N ~<br>25<br>pp<br>0<br>700 900 1100 1300 1500 1700 1900<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
Figure 23.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
0.8<br>Tj = 25°C, IF = 10A<br>Tj = 175°C, IF = 10A<br>0.7<br>ae<br>im=ye 0.6 FE ~ => | L|<br>HE Pe<br>0.5<br>8na<br>Wi<br>0.4<br>im<br>geOe 0.3 ~Fo tT | |<br>0.2<br>0.1<br>0.0<br>700 900 1100 1300 1500 1700 1900<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 24.
( _V_ R=400V)
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Datasheet
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IKD10N60RF
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
30 0<br>Tj = 25°C, IF = 10A Tj = 25°C, IF = 10A<br>EeT Tj = 175°C, I F F = 10A .} LE eT Tj = 175°C, IF = 10A<br>25 SO -200<br>ee= ee a<br>07 7<br>esag 20 eeeea ee -400 eee<br>5i>a7 —ie} N\<br>x4 4 5<br>Ce 15 eere ee -600 ee ee<br>gp let<br>i 7 aan i<br>Ww ®<br>eee eee<br>0 10 — 3 -800 \<br>=i<br>>=<br>i<br>owes De<br>5 -1000<br>Pt te TE eGEP OG<br>0 -1200<br>700 900 1100 1300 1500 1700 1900 700 900 1100 1300 1500 1700 1900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 25. Typical reverse recovery current as a Figure 26. Typical diode peak rate of fall of reverse<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
Figure 25. Typical function ( _V_ R=400V)
( _V_ R=400V)
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**----- Start of picture text -----**<br>
30 3.0<br>25<br>2.5 IF = 1A<br>IF = 5A<br>IF = 10A<br>IF = 20A<br>zc Pt tt ft | ry To<br>20 Ww<br>= || 7) ft | fe<br>;“ Tj = 175°C, VGE = 0V oy] 8EF 2.0 P ee<br>Tj = 25°C, VGE = 0V<br>: Ve<br>re)Q 15 \ / a -——<br>e a ie —<br>fo NY gee<br>1.5<br>10<br>ge | | ff | | 8<br>Pt | iA | | pt<br>1.0<br>5<br>PE | YE Et [a<br>n/a/ pt tt et<br>0 0.5<br>P ieTTT hE<br>0 1 2 3 4 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 27. Typical diode forward current as a function Figure 28. Typical diode forward voltage as a function<br>I F V F<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## Package Drawing PG-TO252-3
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MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br>
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DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>
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Datasheet
IKD10N60RF
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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V�2.5 2017-09-26
Datasheet
IKD10N60RF
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Revision�History**
IKD10N60RF
## **Revision:�2017-09-26,�Rev.�2.5**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2012-02-24|Final data sheet|
|2.2|2013-12-10|New value ICES max limit at 175°C|
|2.3|2014-02-26|Without PB free logo|
|2.4|2014-03-12|Storage temp-55...+150°C|
|2.5|2017-09-26|Update Fig. 13 E(Ic)|
15
V�2.5 2017-09-26
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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