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IKD06N60RFATMA1
IGBT, 12 A, 2.2 V, 100 W, 600 V, TO-252 (DPAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:12A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No. of Pins:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 100W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-252 (DPAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 12A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.2V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.308 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## IGBT
IKD06N60RF TRENCHSTOP[TM]
## IKD06N60RF
## TRENCHSTOP[TM]
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Features: C<br>TRENCHSTOP [TM] Reverse Conducting (RC) technology for 600V<br>applications offering<br>¢ Optimized Eon, Eoff and Qrr for low switching losses<br>G<br>¢ Operating range of 4 to 30kHz<br>E<br>* Smooth switching performance leading to low EMI levels<br>* Very tight parameter distribution<br>* Maximum junction temperature 175°C<br>¢ Short circuit capability of 5us C<br>¢ Best in class current versus package size performance<br>* Qualified according to JEDEC for target applications i<br>¢ Pb-free lead plating; ROHS compliant (solder temperature “Cp heap<br>http://www.infineon.com/igbt/ S =<br>Complete product spectrum and PSpice Models: | ay<br>G<br>Applications:<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD06N60RF|600V|6A|2.2V|175°C|K06R60F|PG-TO252-3|
Datasheet www.infineon.com
2014-03-12
IKD06N60RF
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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IKD06N60RF
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||12.0<br>6.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||18.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||18.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||12.0<br>6.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||18.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_c=25°C|_P_tot||100.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|1.50|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|3.60|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
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Datasheet
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=6.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.20<br>2.30|2.50<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=6.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.10<br>2.00|2.40<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.11mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current1)|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>1000|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=6.0A|-|2.9|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|470|-|pF|
|Output capacitance|_C_oes||-|24|-||
|Reverse transfer capacitance|_C_res||-|14|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=6.0A,<br>_V_GE=15V|-|48.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=25°C|-|46|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=50nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E|-|7|-|ns|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|106|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|0.09|-|mJ|
|Turn-off energy|_E_off||-|0.09|-|mJ|
|Total switchingenergy|_E_ts||-|0.18|-|mJ|
1) Not subject to production test - verified by design/characterization
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=770A/µs|-|48|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.16|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-195|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=50nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E|-|8|-|ns|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|115|-|ns|
|Fall time|_t_f||-|35|-|ns|
|Turn-on energy|_E_on||-|0.15|-|mJ|
|Turn-off energy|_E_off||-|0.13|-|mJ|
|Total switchingenergy|_E_ts||-|0.28|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=770A/µs|-|74|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.34|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-177|-|A/µs|
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Datasheet
IKD06N60RF
## TRENCHSTOP[TM]
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3.5<br>a Pitty<br>10<br>3.0 Tt TTT pt A A SN<br>are ~N a|a<br>— SHS SES<br>2.5 tiie Ea ee Se eee<br>s NJ —_s pL aNN iNT<br>ia ia tp=10µs<br>a 2.0 Fe 20µs eaiiisen<br>oO oO 50µs | \)<br>a a jemi<br>O 1.5 O 1 100µs oe<br>Ww \ Ww A<br>a a Ceee<br>ro} \ re) 200µs rrr TE TT VT YT<br>) ) EEA<br>° 1.0 ° ee 500µs ot TNT<br>DC<br>\<br>0.5<br>0.0 0.1<br>0.1 1 10 100 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V)<br>( T vj ≤ 175°C, T a =55°C, D =0.5, V CE=400V,<br>V GE =15/0V, r G=23 Ω , PCB mounting, 6cm 2Cu,<br>Ptot=2,4W)<br>100 14<br>90<br>12<br>80<br>es 70 | \| fz 10<br>Zze) Zz<br>é KV<br>60<br><xéo |ok oaia) 8<br>pio NL 8<br>2) 50 or<br>° e<br>u 40 2 6<br>o [O]<br>is 30<br>4<br>20<br>\<br>2<br>10<br>0 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>
> Figure 3. Power **temperature** ( _T_ vj ≤ 175°C)
Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
Datasheet
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IKD06N60RF
## TRENCHSTOP[TM]
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18 18<br>VGE=20V<br>16 16<br>17V<br>cee i// ERR<br>14 15V 14 VGE=20V<br>13V 17V<br>12 See // 2 12 any,<br>11V 15V<br>pS Ry<br>9V 13V<br>10 10<br>PLEA 7V 11V<br>JE SSS<br>8 8 9V<br>7V<br>PRS) PSS<br>6 6<br>1 CON Gerry SSR<br>4 4<br>ann Zanns oY Z.68<br>2 2<br>JI fNn it |grees<br>ATLL<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T vj=25°C) ( T vj=175°C)<br>18 4.0<br>a / Le<br>Tj=25°C IC=0.5A<br>Tj=175°C IC=3A<br>16 3.5 IC=6A<br>IC=12A<br>EU ELLE<br>14<br>P O LL}? Be ep<br>3.0<br>_ fi | 8 a<br>e y be<br>i 12 / < 2.5<br>10<br>PEL Cee<br>2.0<br>8<br>O a<br>1.5<br>Ati AT ye<br>6<br>1.0<br>4<br>2 SeogTE one 0.5 LE<br>0 0.0<br>4 y 5 A 6 7 8 9 10 11 12 * PEER 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Figure 8.<br>( Typical V CE=10V) transfer characteristic rypicaa func t ion collectorof junctionemittertemperature Saturation voltage<br>I C I C<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
( _V_ GE=15V)
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IKD06N60RF
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
td(off)<br>tf<br>td(on)<br>tr<br>St Efe<br>100 SS =<br>100<br>ee ee e ee<br>a a e ————<br>EEE EE eee a a<br>w a ae ee ee ee ee ee a a a<br>£ p—t | rtf]<br>| ttd(off)f PPPSS]| lu} csoe aEe<br>F td(on) F >-_ _<br>tr<br>é= 9 |pcosann<br>O O wean<br>10<br>10<br>= a ee ee ee = er<br>i Doo-to ee |) aes a a<br>a ee ee<br>er a ee ee Cae a<br>4 a<br>Pt | | tt<br>1 1<br>3 4 5 6 7 8 9 10 11 12 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>
Figure 9.
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**----- Start of picture text -----**<br>
Figure 10. Typical switching times as a<br>resistor<br>(inductive load, T vj =175°C, V CE=400V,=400V,<br>V GE =15/0V, I C =6A, Dynamic test circuit<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,=400V,<br>V GE =15/0V, r G=23 Ω , Dynamic test circuit in V GE =15/0V, I C =6A, Dynamic test circuit in<br>Figure E) Figure E)<br>6.0<br>typ.<br>min.<br>5.5 max.<br>100 TE— _—_—_—peers eses ee (V)x “RY ~e<br>| td(off) a ee ee = se<br>1 tf a a | 5.0 =<br>td(on)<br>ory I tr a ro)eeee oN ~A A<br>Z| a = Pe _—<br>4.5<br>= p p g<br>: —— 4.0 ~<br>Zz ye pS ~~<br>5 FE S a<br>10<br>Ee ar _<br>3.5<br>= eea Eee EFUS ~ SN<br>. a ee ti ~ ~~<br>3.0<br>po | ~<br>2.5<br>1 2.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11.
Figure 12.
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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V,<br>I C =6A, r G=23 , Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br>
( _I_ C=0,11mA)
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IKD06N60RF
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
0.6 0.5<br>Y<br>EEEoffonts “ YY | Yo EEEoffonts “7<br>0.5 Pan<br>0.4<br>7 ee eee<br>ee e e<br>£& Vl £& —<br>LU WA LU<br>7)Bt 0.4 tT Uw2 7) “ +<br>9/ 0.3<br>>oO 7ms wa >oO 7a“<br>ef 0.3 eB Le<br>Q - 0.2<br>7 a © a |__<br>ei 0.2 —_<br>eb ep ee<br>eB pee<br>0.1<br>0.1 pet<br>| |<br>ett<br>0.0 0.0<br>3 4 5 6 7 8 9 10 11 12 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=23 Ω , Dynamic test circuit in V GE =15/0V, I C =6A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
0.30 0.4<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>0.25<br>0.3<br>Ww pan Ww Lec<br>7)noz; 0.20 7= Ea -i - 7)ap)zs}; ] | foe.L- --<br>oa aa L-<br>O o) ues<br>ow wa --<br>nm_ 0.15 ; Pf | nm 0.2 ;<br>oO —_ — O —_—<br>Zz --~f Zz<br>Zz ao Zz =<br>: - eo<br>O 0.10 —_——- | O _a<br>0.1<br>0.05<br>0.00 0.0<br>25 50 75 100 125 150 175 300 325 350 375 400 425 450<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I C =6A, r G=23<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
V CE =400V, V GE=15/0V,<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V GE=15/0V,<br>I C =6A, r G=23 , Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br>
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Datasheet
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IKD06N60RF
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
16 1000<br>120V / / / Ca a a se ee<br>480V<br>aa a a a<br>14 / / a<br>/ ee ee<br>(a ee<br>= 12 / ee CCiesoes 0<br>O /_ 100 Cres<br>re)I 10 = pyON<br>S | / WwoO ONpu [NST]<br>iw 8 S o Zz po Sa<br>ui | £ [NSS<br>kb O ~SL Fee<br>< Toa<br>MW 6 oa a<br>x . 10<br>oO a eeeS es<br>aa<br>4 aee<br>a<br>2<br>a a<br>0 1<br>0 10 20 30 40 50 60 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 17. Typical ( _I_ C=6A)
Figure 18.
( _V_ GE
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90 12<br>80<br>S SERREEEY PRE<br>10<br>: EE EL Ly<br>: e \<br>70 1 uw<br>ia e {oN<br>ef LE \<br>: 60 ke 8<br>Bry / s FEN ETT]<br>O lel<br>RTT] ]é EELALEETE<br>: 50 J D<br>E<br>6<br>a ; ef) QI<br>Zee: ,<br>40 | a)<br>:E es {tLPINTT<br>5eyeLo fs) Nr<br>a 30 VA O 4<br>ocee PEO LEA\<br>20<br>2 & \<br>2<br>10<br>Eee FEEEEEERE<br>0 0<br>12 14 16 18 20 10 11 12 13 14 15 16 17 18 19<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC) t SC<br>**----- End of picture text -----**<br>
Figure 19.
( _V_ CE 400V, start at _T_ vj=25°C)
Figure 20.
( _V_ CE 400V, start at _T_ vj=150°C)
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Datasheet
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IKD06N60RF
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1 We<br>S D=0.5 MM 1 TT | D=0.5<br>< 277 0.2 et ae CU LALae 0.2<br>uw Bi 0 SU a tg a See ee ime<br>Ww2 ETJ TT 0.1 a Wwea aAyfA 0.1<br>0.05 0.05<br>270 cA = TE a ero<br>0.02 0.02<br>a Iere (IT FC TeTT<br>im cas PD 0.01 2 TIaLIEl 0.01<br>FEMae 0.1 Fe/ Da| il| single pulse imFE= ora eae|V/ |Lo |pe single pulse<br>0.1<br>2 AaA A ee et<br>5 CORZ O f| 5 aye at a Lae , HTH,<br>EL et cm, CUT ci<br>aPa rorm Tr To ol) ST<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.1032 0.7299 0.5682 0.0638 ri[K/W]: 1.0958 1.6643 0.7461 0.0827<br>τ i[s]: 7.9E-5 4.0E-4 1.8E-3 0.0307 τ i[s]: 7.9E-5 2.8E-4 1.7E-3 0.02494<br>e mill ul a s [ a<br>0.01 0.01<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
Figure 21.
( _D_ = _t_ p/T)
Figure 22.
( _D_ = _t_ p/T)
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**----- Start of picture text -----**<br>
120 0.6<br>Tj=25°C, IF = 6A<br>Se Tj=175°C, IF = 6A n eee<br>i ee e See<br>100 0.5<br>i e T e j=25°C, IF = 6A |e<br>Tj=175°C, IF = 6A<br>we] 80 | | pk | | ye 0.4 Jee |<br>Sea | ee~ ><br>A A ee ee<br>60 0.3<br>s) — 5<br>a Aee<br>ui ~~ 4 uw ff _j__j |__| —<br>a 40 Lu 0.2<br>2 ee<br>ag a eglu<br>fete ey<br>20 PE ey ® 0.1 EP ey<br>0 0.0<br>500 600 700 800 900 500 600 700 800 900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 23. Typical of diode ( _V_ R=400V)
Figure 24.
( _V_ R=400V)
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Datasheet
2014-03-12
IKD06N60RF
## TRENCHSTOP[TM]
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12 0<br>Tj=25°C, IF = 6A Tj=25°C, IF = 6A<br>Tj=175°C, IF = 6A Tj=175°C, IF = 6A<br>11 EJ. a Sa<br>-50<br>= : > | | | T r y<br>a 7)<br>2= 10 zt],a iy ) | |<br>-100<br>neZn ae 2 Nee eee<br>9<br>:O 2 ie | XE)<br>plo PR<br>8 -150<br>> 2 SS<br>WY o<br>BRT 7 TT Leeyy EERE<br>4 = oe Ne<br>-200<br>é = : S<br>: — ce Ne<br>6<br>-250<br>et) A<br>5<br>PELE Pt tT tT tT |EN<br>4 -300<br> ELLE ) Geprereres<br>500 600 700 800 900 500 600 700 800 900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
Figure 25. Typical function ( _V_ R=400V)
Figure 26.
( _V_ R=400V)
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18<br>Tj=25°C, VGE=0V a ee<br>Tj=175°C, VGE=0V ——]<br>16<br>14<br>z<br>12<br>10<br>a)<br>: |<br>Q<br>8<br>z<br>ae<br>wr<br>6<br>4<br>Saey Sane<br>2<br>0<br>0 1 2 3 4<br>V F , FORWARD VOLTAGE [V]<br>I F<br>**----- End of picture text -----**<br>
Figure 27.
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**----- Start of picture text -----**<br>
3.0 | | | | tT<br>2.5 IF=0.5A<br>IF=3A<br>IF=6A<br>a e IF=12A e<br>2.0<br>EF<br>ee ee ee ee<br>e 1.5 |) | te |<br>(ag<br>ee<br>1.0<br>0.5<br>pf |<br>0.0<br>0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 28.
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IKD06N60RF
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## Package Drawing PG-TO252-3
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**----- Start of picture text -----**<br>
MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br>
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DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>
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IKD06N60RF
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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V�2.4 2014-03-12
Datasheet
IKD06N60RF
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Revision�History**
IKD06N60RF
## **Revision:�2014-03-12,�Rev.�2.4**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2012-02-24|Final data sheet|
|2.2|2013-12-10|New value ICES max limit at 175°C|
|2.3|2014-02-26|Without PB free logo|
|2.4|2014-03-12|Storage temp-55...+150°C|
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V�2.4 2014-03-12
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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