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IKD06N60RC2ATMA1
IGBT, 11.7 A, 2 V, 51.7 W, 600 V, TO-252 (DPAK), 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP RC
- Power Dissipation: 51.7W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-252 (DPAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 11.7A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.279 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
IKD06N60RC2 ## TRENCHSTOP[TM] ## **Features:** **==> picture [79 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> TRENCHSTOP [TM]<br>**----- End of picture text -----**<br> **==> picture [133 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> http://www.infineon.com/rc-d2<br>**----- End of picture text -----**<br> **==> picture [96 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>C<br>Nip<br>60g 22 2<br>y ™~ ~/<br>G >,<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKD06N60RC2|600V|6A|2V|175°C|K6DRC2|PG-TO252-3| Datasheet www.infineon.com 2020-09-28 IKD06N60RC2 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 2 V�2.1 2020-09-28 Datasheet IKD06N60RC2 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||11.7<br>8.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||18.0|A| |Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||18.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||5.3<br>2.8|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||18.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±25|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs| |Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||51.7<br>25.9|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|2.90|K/W| |Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|9.50|K/W| |Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W| |Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W| 1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 3 V�2.1 2020-09-28 Datasheet IKD06N60RC2 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=6.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.00<br>2.40|2.30<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=6.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.90<br>1.95|2.20<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.65mA,_V_CE=_V_GE|4.3|5.0|5.7|V| |Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|25<br>2500|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=6.0A|-|2.5|-|S| |Integratedgate resistor|_r_G|||none||Ω| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|250|-|pF| |Output capacitance|_C_oes||-|13|-|| |Reverse transfer capacitance|_C_res||-|10|-|| |Gate charge|_Q_G|_V_CC=480V,_I_C=6.0A,<br>_V_GE=15V|-|31.0|-|nC| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=49.0Ω,_R_G(off)=49.0Ω,<br>_L_σ=30nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|6|-|ns| |Rise time|_t_r||-|11|-|ns| |Turn-off delaytime|_t_d(off)||-|129|-|ns| |Fall time|_t_f||-|30|-|ns| |Turn-on energy|_E_on||-|0.17|-|mJ| |Turn-off energy|_E_off||-|0.08|-|mJ| |Total switchingenergy|_E_ts||-|0.25|-|mJ| V�2.1 2020-09-28 Datasheet 4 IKD06N60RC2 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=597A/µs|-|98|-|ns| |Diode reverse recoverycharge|_Q_rr||-|222.00|-|nC| |Diodepeak reverse recoverycurrent|_I_rrm||-|7.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-140|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=49.0Ω,_R_G(off)=49.0Ω,<br>_L_σ=30nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|6|-|ns| |Rise time|_t_r||-|12|-|ns| |Turn-off delaytime|_t_d(off)||-|170|-|ns| |Fall time|_t_f||-|30|-|ns| |Turn-on energy|_E_on||-|0.24|-|mJ| |Turn-off energy|_E_off||-|0.12|-|mJ| |Total switchingenergy|_E_ts||-|0.36|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=562A/µs|-|145|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|439.00|-|nC| |Diodepeak reverse recoverycurrent|_I_rrm||-|9.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-93|-|A/µs| V�2.1 2020-09-28 Datasheet 5 IKD06N60RC2 ## ~~RG~~ TRENCHSTOP[TM] Series forhard switching applications ~~tt”~~ **==> picture [474 x 670] intentionally omitted <==** **----- Start of picture text -----**<br> 60 12<br>50 PPE 10 PA<br>| NN<br>eI\ 40 de LN 8<br>PE XE TE ELLEN<br>30 6<br>SERN: 20 \ oO 4 eee\<br>10 2<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Figure 2.<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ T vj ≤ 175°C)<br>18 18<br>VGE=20V VGE=20V<br>TT] V4 /<br>17V 17V<br>15 15V 15 15V<br>—/|) LN<br>13V 13V<br>11V 11V<br>12 12<br>9V 9V<br>7V 7V<br>9 9<br>6 6<br>3 3<br>iy cae) an<br>fo.<br>0 0<br>| | AS<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Figure 4.<br>( T vj=25°C) ( T vj=175°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br> 6 Datasheet 2020-09-28 IKD06N60RC2 ## TRENCHSTOP[TM] **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 18 5.0<br>Tj=25°C IC=3A<br>Tj=175°C 4.5 IC=6A<br>IC=12A<br>15<br>eI ff/ :zfe) Bf 4.0<br>_< Eera 3.5<br>12<br>d Be |<br>3.0<br>a om<br>a) Ww<br>: aia 2<br>w 9 oa 2.5<br>:Ww: Goadef 2.0 Lee<br>e) 6 oO<br>1.5<br>O<br>1.0<br>[ oe ee<br>3<br>0.5<br>0 0.0<br>2 4 6 8 10 12 14 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br> **==> picture [80 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 5. Typical<br>( V CE=20V)<br>**----- End of picture text -----**<br> Figure 6. Typical a function ( _V_ GE=15V) **==> picture [471 x 344] intentionally omitted <==** **----- Start of picture text -----**<br> en ee ee ee 1000 SS<br>| td(off) ee ee ee ee 1 td(off) oe<br>tf tf<br>I td(on) ee ee ee ee i td(on) a<br>tr tr<br>a<br>| ea n a [|]<br>100 ee<br>= Se 100 ee ee ee ee<br>“ a) a eesD 2) a a kN<br>Ww PN a a eA<br>= = Po A NT<br>- ee a a ee a, Se<br>gI [stgwellsy I eS ed<br>E FE | | | | | |tT<br>=- 10 aa =~ 10 [}_ i poss<br>a ee eee a a<br>a ae ee ee a a a a ee<br>le<br>a a a pt perf<br>Pee<br>1 1<br>2 4 6 8 10 12 0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, R G=49 Ω , Dynamic test circuit in V GE =15/0V, I C =6A, Dynamic test circuit in<br>Datasheet Figure E) 7 Figure E)<br>t t<br>**----- End of picture text -----**<br> **==> picture [38 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> 2020-09-28 IKD06N60RC2 ## TRENCHSTOP[TM] **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 aa 6<br>| i td(off) a ee ee ee typ.<br>I tf a ee ee ee eee _<br>td(on)<br>I a eeee<br>tr 5<br><x<br>a :<br>i<br>—Zze 100 fC| — | | | a 4<br>ip) a<br>im poa (e)<br>= a oO<br>- a Wy<br>3<br>OQ a ee ee ee ee ee<br><== ee -<br>= La<br>a2)7 10 pa eeoopyeSoeee Ww= 2<br>a ee x<br>a es eo)<br>Oe es 1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 9. **==> picture [119 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> V CE =400V, V GE =15/0V, I C=6A,<br>**----- End of picture text -----**<br> Figure 10. ( _I_ C=0.65mA) **==> picture [27 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> R G=49<br>**----- End of picture text -----**<br> **==> picture [471 x 342] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8 0.5<br>Eoff Eoff<br>Eon Eon<br>0.7 Ets Ets<br>/ a<br>a 4 5 0.4 -<br>£ 0.6 4 £ poe<br>(op) 7 (ep) . “7<br>a) v Z| Oo -"<br>e) 0.5 ¢ e)<br>0.3<br>><br>O<br>ow a 7 O Poe<br>0.4<br>ZzWw ¢ Y V4 owLu - _<br>uw ¢ 7 Z -<br>oO Y y uw 0.2 _<br>Zz 0.3 ¢” ZzO _ -<br>FEiO Y: y 7 iFEO 7<br>0.2<br>0.1<br>7<br>n e<br>0.1<br>0.0 0.0<br>2 4 6 8 10 12 0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, R G=49 Ω , Dynamic test circuit in V GE =15/0V, I C =6A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br> 8 Datasheet 2020-09-28 IKD06N60RC2 ## TRENCHSTOP[TM] **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5 0.5<br>Eoff Eoff<br>Eon Eon Y<br>Ets Ets oY<br>— 0.4 0.4<br>Ww ” - ” ¢<br>2 aiDeve Ww2 ray, Z<br>O -- eo) ” 7<br>—! 0.3 —! 0.3<br>> 7 > ¢<br>na na ? 7<br>Ww Ww ,<br>Zz —_— Zz ” a<br>Ww _— Lu ” a<br>ZzoO 0.2 —— _ ence (Oo)Zz 0.2 a 7 7 a<br>E<br>0.1 0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br> Figure 13. _I_ C =6A, _R_ G=49 Figure E) **==> picture [91 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> V CE =400V, V GE=15/0V,<br>**----- End of picture text -----**<br> Figure 14. (inductive load, _T_ vj =175°C, _V_ GE=15/0V, _I_ C =6A, _R_ G=49 , Dynamic test circuit in Figure E) **==> picture [471 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 16 a | 1000 a a<br>V CC Cies<br>— = 120V | a<br>—7 V CC = 480V i Coes a<br>14 a / [| I Cres p o<br>7/ Ds e s ee ee<br>Sa 12 V7 eeas a ee<br>100<br>re)F 10 & a ee ee es ee<br>> _. / WwO a a a<br>W 8 TT Td 2 a<br>ke oO= ANeeme,<br>WW --<br>6<br><x . 10 a el ee<br>.<br>4 |ee<br>a<br>2<br>a<br>0 1<br>0 5 10 15 20 25 30 35 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=6A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> 9 Datasheet 2020-09-28 IKD06N60RC2 ## TRENCHSTOP[TM] **==> picture [482 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>|<br>RE<br>2 _ a a anni<br>=z 50 =2 1 |||Corr OZ<br>D=0.5<br>7 Ww Senet eeettl see Soma Tt<br>ieo > eeeTT St meee + 0.2 |<br>0.1<br>os 40 i)< =|anil<br>0.05<br>5 gE 0.02<br>: : Ae ll<br>: 2 0.1 Comer 7<br>0.01<br>30<br>O x Se single pulse<br>KE5 r et2<br>fe F ee Za<br>20 —<br>oO 2 SUT On Fai SAA<br>: BT 0.01 e le<br>Tr i | HI<br>a)oO o" neSse gotyoe Ha octie, — Tl<br>~ 10 2 ell<br>E N<br>i: 1 2 3 4 5<br>ri[K/W]: 0.27885 2.1736 0.38883 0.02886 7.7E-4<br>τ i[s]: 1.4E-4 6.3E-4 3.2E-3 0.09737142 3.947901<br>|_|<br>" |__|<br>0 0.001<br>12 13 14 15 16 17 18 1E-7 1E-6 1E-5 1E-4 0.001 0.01<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical short circuit collector current as a Figure 18. IGBT transient thermal resistance<br>function of gate-emitter voltage ( D = t p/T)<br>( V CE 400V, T vj 150°C)<br>10 200<br>Eee ee a<br>a(|| | Tj=25°C, IF = 6Aj=25°C, IF = 6A=25°C, IF = 6AF = 6A = 6A<br>a | Tj=175°C, IF = 6Aj=175°C, IF = 6A=175°C, IF = 6AF = 6A = 6A yoo<br>180<br>PT<br>= SSS ae<br>SCO8 ines D=0.5 160 Wii<br>8 1 LUe A l TiT m lil 0.2 lle2 1<br>140<br>5 eA 0.1 = \<br>ne) eT<br>it TT, 0.05<br>120<br>0.02<br>a: ee tt ae \<br>ff _____.. 0.01 iil & A a<br>ge 0.1 ells> 100 .<br>single pulse<br>FE A 2 ce | 80 ~<br>E Aa eet = ee~~<br>eg NY —><br>7) 7 a Pt 60<br>0.01<br>2 VANILL I |<br>- | PACee i= A/R Co=telRe Hl 4020<br>A<br>i: 1 2 3 4 5 20 Pf ff<br>ri[K/W]: 0.45136 7.1994 1.8057 0.092859 7.4E-4<br>τ i[s]: 3.8E-5 2.4E-4 1.3E-3 0.03462926 4.012824<br>|_|<br>0.001 0<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 400 900 1400 1900 2400 2900<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 19. Diode transient thermal impedance as a Figure 20. Typical reverse recovery time as a function<br>function of pulse width of diode current slope<br>( D = t p/T) ( V R=400V)<br>I C(SC) Z c)th(j-<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> **==> picture [235 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>a<br>Tj=25°C, IF = 6Aj=25°C, IF = 6A=25°C, IF = 6AF = 6A = 6A<br>| Tj=175°C, IF = 6Aj=175°C, IF = 6A=175°C, IF = 6AF = 6A = 6A yoo<br>180<br>160 Wii<br>2 1<br>= 140 \<br>120<br>ae \<br>& A a<br>> 100 .<br>80 ~<br>= ee~~<br>—><br>Pt 60<br>4020 Pf ff<br>0<br>400 900 1400 1900 2400 2900<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br> 10 Datasheet 2020-09-28 IKD06N60RC2 ## TRENCHSTOP[TM] **==> picture [476 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> 600 25<br>Tj=25°C, IF = 6A Tj=25°C, IF = 6A<br>Tj=175°C, IF = 6A Tj=175°C, IF = 6A<br>500<br>20<br>oO 2 Zz<br>a - Ww 7<br><x 400 owow 7 7<br>O 15 Z|<br>S D > [/] 7<br>a ee 7 7<br>> 300 v 7<br>0)eyigag 200 eae ELidnmw 10 /aA ZO<br>Lu uw /<br>> ><br>uw i<br>5<br>100<br>0 0<br>400 900 1400 1900 2400 2900 400 900 1400 1900 2400 2900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>Q rr I rr<br>**----- End of picture text -----**<br> Figure 22. Typical function ( _V_ R=400V) ( _V_ R=400V) **==> picture [489 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> 0 18 Ld<br>Tj=25°C, IF = 6A Tj=25°C<br>\ Tj=175°C, IF = 6A Tj=175°C /<br>ae e e =<br>-100 15<br>= \<br>g\<br><<br>N <=<br>°s -200 \ Znd 12 /<br>32 \N 3O<br>© -300 Q 9<br>5<br>: \ 5 }<br>o \ :<br>-400 6<br>8 \ fe) /j<br>-500 3<br>-600 0<br>400 900 1400 1900 2400 2900 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Figure 23. Typical diode peak rate of fall of reverse Figure 24. Typical diode forward current as a function<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br> ( _V_ R=400V) 11 Datasheet 2020-09-28 IKD06N60RC2 ## TRENCHSTOP[TM] **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5<br>IF=3A<br>IF=6A<br>IF=12A<br>3.0<br>2.5<br>Oo<br><x<br>Kk<br>i 2.0<br>><br>Q<br>a<br><x<br>1.5<br>[a<br>e)<br>LL<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 25. 12 Datasheet 2020-09-28 IKD06N60RC2 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications ## Package Drawing PG-TO252-3 **==> picture [391 x 283] intentionally omitted <==** **==> picture [140 x 55] intentionally omitted <==** **==> picture [129 x 40] intentionally omitted <==** **==> picture [158 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br> **==> picture [83 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br> 13 V�2.1 2020-09-28 Datasheet IKD06N60RC2 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 V�2.1 2020-09-28 Datasheet IKD06N60RC2 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications ## **Revision�History** IKD06N60RC2 ## **Revision:�2020-09-28,�Rev.�2.1** |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |2.1|2020-09-28|Final data sheet| 15 V�2.1 2020-09-28 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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