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IKD06N60RATMA1
IGBT, 6 A, 2.1 V, 100 W, 600 V, TO-252 (DPAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:6A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No. of Pins:3Pins;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 100W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-252 (DPAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 6A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.1V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.298 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## IGBT
## IKD06N60R
TM
IKD06N60R
## TRENCHSTOP[TM]
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Features:<br>TRENCHSTOP [TM] Reverse Conducting (RC)<br>applications offering<br>¢ Optimised V CEsat and V_ F for low conduction losses<br>* Smooth switching performance leading to low EMI<br>* Very tight parameter distribution<br>¢ Operating range of 1 to 20kHz<br>* Maximum junction temperature 175°C<br>¢ Short circuit capability of 5us<br>¢ Best in class current versus package size<br>* Qualified according to JEDEC for target<br>¢ Pb-free lead plating; ROHS compliant (for<br>temperature 260°C, MSL1)<br>* Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications:<br>* Consumer motor drives<br>**----- End of picture text -----**<br>
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C<br>G<br>E<br>C<br>pn<br>“Cp heap<br>“<52.9<br>Pa<br>G<br>ao<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD06N60R|600V|6A|1.65V|175°C|K06R60|PG-TO252-3|
Datasheet www.infineon.com
2014-03-12
IKD06N60R
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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IKD06N60R
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||12.0<br>6.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||18.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||18.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||12.0<br>6.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||18.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_c=25°C|_P_tot||100.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|1.50|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|3.60|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=6.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.85|2.10<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=6.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.70<br>1.70|2.10<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.11mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current1)|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>1000|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=6.0A|-|3.4|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|470|-|pF|
|Output capacitance|_C_oes||-|24|-||
|Reverse transfer capacitance|_C_res||-|14|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=6.0A,<br>_V_GE=15V|-|48.0|-|nC|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=25°C|-|46|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|12|-|ns|
|Rise time|_t_r||-|7|-|ns|
|Turn-off delaytime|_t_d(off)||-|127|-|ns|
|Fall time|_t_f||-|152|-|ns|
|Turn-on energy|_E_on||-|0.11|-|mJ|
|Turn-off energy|_E_off||-|0.22|-|mJ|
|Total switchingenergy|_E_ts||-|0.33|-|mJ|
1) Not subject to production test - verified by design/characterization
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=800A/µs|-|68|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.37|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|12.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-211|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|12|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|164|-|ns|
|Fall time|_t_f||-|171|-|ns|
|Turn-on energy|_E_on||-|0.20|-|mJ|
|Turn-off energy|_E_off||-|0.36|-|mJ|
|Total switchingenergy|_E_ts||-|0.56|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=800A/µs|-|74|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|17.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-237|-|A/µs|
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IKD06N60R
## TRENCHSTOP[TM]
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4<br>ul / NIN (SPE<br>\ 10 poee NN oeat rN<br>3<br>x \ ey ee<br>_ \ x ee ee SRR ae Ne<br>2 _ po tp=1µs | ee NT Ne NS<br>te \ te2 peaeEN TNeen)iN<br>50µs<br>3 \ 3 | TUE TTT\<br>m 2 OTT<br>20µs<br>LL a Tq) Lta<br>ELCs 1 10µs<br>+ mena! SPSS Sa<br>200µs<br>ro ro Ee Se aiiimemaciil<br>Ss} Ss} el<br>500µs<br>1 en es| eee |<br>DC<br>0 0.1<br>0.1 1 10 100 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V)<br>( T vj ≤ 175°C, T a =55°C, D =0.5, V CE=400V,<br>V GE =15/0V, r G=23 Ω , PCB mounting, 6cm2<br>Cu, Ptot=2,4W)<br>110<br>100<br>12<br>90<br>80<br>10<br>z<br>> > E<br>70<br>fe < i<br>8<br>oO 60 \ =)<br>7)2) Nee oOor<br>50<br>ce} Xd N<br>u 2 6<br>= 40 =<br>ee 4<br>30<br>20<br>PP NE \<br>2<br>10<br>0 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>
> Figure 3. Power **temperature** ( _T_ vj ≤ 175°C)
Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
Datasheet
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IKD06N60R
## TRENCHSTOP[TM]
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18 VGE=20V a eel /<br>16 17V I<br>15V —H /<br>14<br>13V<br>11V<br>12<br>WW 9V<br>10 7V<br>8<br>6<br>4<br>yr<br>2<br>|<br>0<br>0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br>
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18<br>VGE=20V<br>16 17V 74<br>15V tN<br>14<br>13V<br>11V<br>12<br>9V<br>10 7V<br>8<br>{|<br>6<br>4<br>2<br>fpr.<br>0<br>0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>**----- End of picture text -----**<br>
Figure 6. Typical ( _T_ vj=175°C)=175°C)
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**----- Start of picture text -----**<br>
Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T vj=25°C) ( T vj=175°C)=175°C)<br>18 3.5<br>Tj=25°C IC=3A<br>Tj=175°C IC=6A<br>IC=12A<br>BJU) = 3.0<br>15<br>|, fed<br>_<br>=<br>< < 2.5 je<br>Sim) [peeeeeoe] -<br>12<br>uwsone PR/ <x eT_--—<br>2.0<br>3 / eeui tT<br>9<br>E WW<br>Oo a 1.5<br>am—FSe<br>(Oy SSS<br>5 6 1.0<br>|] e Ft ttt yl<br>3<br>0.5<br>Ya PTET TTL<br>0 0.0<br>4 6 8 10 12 14 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage<br>( V CE=10V) a function of junction temperature<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
( _V_ GE=15V)
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IKD06N60R
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1000 aa 1000<br>a a ee |1 td(off) a aa aee ee es<br>a ee es I tf eee<br>td(on)<br>tr<br>ee ee Ff<br>a ee | i eee<br>100 o a td(off) ssee eeeee ee 100 ae e eeeee<br>ip)imz= H|1 ttfd(on) aaa aee ee ee ip)=2 aaaECaaee rrr<br>= I tr ee ee ee = aee<br>- S SS a<br>OQ a ee ee ee a ee ee ee ee eee<br>a e e<br>eeeE E eaeweb .<br>2) 10 a ate 2) 10 ee<br>7 (a ee 7 a ss<br>ee a es a es es es<br>ea a a<br>a ee ee ee a eeee<br>a ee ee a ee ee<br>a P| tT tT<br>1 1<br>2 4 6 8 10 12 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=23 Ω , Dynamic test circuit in V GE =15/0V, I C =6A, Dynamic test circuit in<br>Figure E) Figure E)<br>1000 7<br>aa ee<br>a aes a typ.<br>a — min.<br>max.<br>a a E a<br>a] 8 6<br>EF SL<br>po e)<x ——<br>100 td(off) 5<br>ip)uw |1 ttfd(on) poa a a (oe) reRe<br>—= H| tr _a— —]ee ee ee eee 7) ae ——<br>- SS es Wy a ae<br>4<br>Q ee ee ee :: =o — a<br>= ee ee ss<br>ee ee in<br>= a a<br>2)- 10 aa eees re eeee = 3 ><br>are een Ww<br>aa ee se x<br>eseo)<br>2<br>1 1<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =6A, _r_ G=23 , Dynamic test circuit in Figure E)
Figure 12.
( _I_ C=0.11mA)
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IKD06N60R
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1.0 0.8<br>/<br>EEoffon vA/ EEoffon<br>Ets Ets -<br>7 ec<br>7 —<br>oe) 0.8 / _ se<br>0.6<br>n n ae<br>im 7 im eo<br>ip) 7 Op) Lc<br>2 / ie) i<br>@) / @)<br>—! 0.6 7 —!<br>>><br>Z 0.4<br>io /é io2 | | |tar ———<br>0.4<br>2 1 2<br>Ir / L a = Le _—<br>Re / a E — ~<br>= / Za = 0.2 a<br>°. 0.2 AO \ oe on<br>/ WA oo<br>=<br>a<br>2 [a]<br>0.0 0.0<br>0 2 4 6 8 10 12 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=23 Ω , Dynamic test circuit in V GE =15/0V, I C =6A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
0.5 0.7<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>0.6<br>5 0.4 El ) | | S L po<br>0.5<br>onnm Lect ao nmn oo a<br>7) _-t7 7) oa<br>0.3<br>> > 0.4 LL<br>2 2<br>0.3<br>0.2<br>x= ae x=<br>oO _— oO _—<br>FE _ FE 0.2 _— _<br>n _— n _<br>0.1<br>° — ° ee<br>0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 300 350 400 450<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =175°C, V GE=15/0V,<br>I C =6A, r G=23 , Dynamic test circuit in I C =6A, r G=23 , Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
16 1000 a<br>120V / /| || Cies eea<br>14 480V / 7 / }iz e CCoesres eeea ee eeeee ee<br>12<br>S f+ a<br>: / pe |<br>K 10 |<br>=/ g i<br>iI 8 Pt <== 100 ai\ a<br>E 9 ee<br>= a a<br>ul < A<br>b 6 ° pA NP<br>s| aee ee ee<br>4<br>2 fit ft | : | .<br>0 10<br>0 10 20 30 40 50 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 17. Typical ( _I_ C=6A)
Figure 18.
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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>
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90 14<br>80<br>12<br>Ww —<br>ia 70 1 uw<br>ac© =a 10<br>ad 60<br>8<br>a 50 ZL 2<br>=E<br>OEK<br>E 40 | a) 6<br>O wa<br>a)ocoO 30 ywJ\ fi OO<br>4<br>o (e)<br>(e)L 20 x7p)<br>2<br>10<br>0 0<br>12 14 16 18 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC) t SC<br>**----- End of picture text -----**<br>
Figure 19.
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( V CE 400V, start at T vj=25°C)<br>**----- End of picture text -----**<br>
Figure 20. Short circuit withstand time gate-emitter voltage ( _V_ CE 400V, start at _T_ vj ≤ 150°C)
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## TRENCHSTOP[TM]
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2 1 LHRH<br>M,<br>x“, [|] fe Head 2 Disa<br>1<br>Acre<br>Af A tierra D=0.5 TIS D=0.5<br>cae eg| 0.2 / ost 0.2<br>SHIH A a Sincese eee<br>0.1 0.1<br>=7 UMTateoer 0.05 STAM 2 aERECTTMCT®A 0.05<br>< MA eat TI * eon IATITMTATTE UT<br>Seema eTa 0.02 <s JAid e r TT71 0.02<br>0.01 0.01<br>0.1<br>single pulse single pulse<br>a SP eo 0.1 0<br>D I IA Ae TEE TT Fett ATA<br>Z eeea alle re (ll Z TN<br>Sag 22)yi Af Z| Zl rg | Zeer TTT a AT aml<br>TIAA all °C I T a<br>i: 1 2 3 4 i: 1 2 3 4<br>Wo ri[K/W]: zee 0.1032 0.7299 0.5682 a 0.0638 am 2 0 ri[K/W]: 1.0958 1.6643 a 0.7461 0.0827<br>τ i[s]: 7.9E-5 4.0E-4 1.8E-3 0.0307 τ i[s]: 7.9E-5 2.8E-4 1.7E-3 0.02494<br>tS a ul | a<br>0.01 0.01<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 21. IGBT transient thermal impedance as a Figure 22. Diode transient thermal impedance as a<br>function of pulse width (see page 4) function of pulse width (see page 4)<br>( D = t p/T) ( D = t p/T)<br>200 1.0<br>Tj=175°C, IF = 6A Tj=175°C, IF = 6A<br>Tj=25°C, IF = 6A Tj=25°C, IF = 6A<br>pf<br>—== a 0.8<br>150<br>kb I<br>>O<br>0.6<br>3<br>100 IN :<br>ie)wi 4Lu 0.4<br>aa n _——<br>Wu ~<br>50<br>0.2<br>| 0 Pt |] | 0.0<br>500 600 700 800 900 500 600 700 800 900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 23. Typical reverse recovery time as a function Figure 24. Typical reverse recovery charge as a<br>of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>c)th(j- c)th(j-<br>Z Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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20 0<br>Tj=175°C, IF = 6A Tj=175°C, IF = 6A<br>Tj=25°C, IF = 6A Tj=25°C, IF = 6A<br>18<br>raE <,g -100<br>na 16 va<br>=) {o)<br>> oa<br>ing 3°<br>Wwfo)im 14 a %L& -200 —— a<br>nd a<br>2 -“"| 8<br>12<br>ow- —_ a a ; -300<br>ff eee<br>10<br>8 -400<br>500 600 700 800 900 500 600 700 800 900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 25. Typical reverse recovery current as a Figure 26. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>18 2.5<br>IF=3A<br>IF=6A<br>16 Tj=25°C, UG=0V IF=12A<br>Tj=175°C, UG=0V<br>14<br>=a 12 / Wwg 2.0<br>igD 10 7 aO<br>s) ><br>ea 8 Q a<br>< | Lf ra —-<br>= } <<br>wr | =<br>fe) 6 (ag 1.5<br>tt tet 2<br>4<br>2 TAL rr<br>0 1.0<br>0 1 2 3 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>/dt<br>rr<br>I rr dI<br>I F V F<br>**----- End of picture text -----**<br>
Figure 27.
Figure 28.
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## Package Drawing PG-TO252-3
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MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br>
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DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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IKD06N60R
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## **Revision�History**
IKD06N60R
## **Revision:�2014-03-12,�Rev.�2.5**
Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.2|2010-01-12|-|
|2.1|2011-01-17|Release of final datasheet|
|2.2|2013-02-19|Changepackage|
|2.3|2013-12-10|Neu value ICES max limit at 175°C|
|2.4|2014-02-26|Without PB free logo|
|2.5|2014-03-12|Storage temp-55...+150°C|
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Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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