Image not available
Illustrative purposes only
IKD04N60RFATMA1
IGBT, 14.2 A, 2.2 V, 75 W, 600 V, TO-252 (DPAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP RC
- Power Dissipation: 75W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-252 (DPAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 14.2A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.289 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## IGBT
IKD04N60RF TRENCHSTOP[TM]
## IKD04N60RF
## TRENCHSTOP[TM]
**==> picture [214 x 213] intentionally omitted <==**
**----- Start of picture text -----**<br>
Features:<br>TRENCHSTOP [TM] Reverse Conducting (RC)<br>applications offering<br>¢ Optimized Eon, Eoff and Qrr for low switching<br>¢ Operating range of 4 to 30kHz<br>* Smooth switching performance leading to low<br>* Very tight parameter distribution<br>* Maximum junction temperature 175°C<br>¢ Short circuit capability of 5us<br>¢ Best in class current versus package size<br>* Qualified according to JEDEC for target<br>¢ Pb-free lead plating; ROHS compliant (solder<br>http://www.infineon.com/igbt/<br>Complete product spectrum and PSpice Models:<br>Applications:<br>**----- End of picture text -----**<br>
**==> picture [96 x 231] intentionally omitted <==**
**----- Start of picture text -----**<br>
C<br>G<br>E<br>C<br>i<br>“Cp heap<br>S =<br>| ay<br>G<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD04N60RF|600V|4A|2.2V|175°C|K04R60F|PG-TO252-3|
Datasheet www.infineon.com
2016-05-10
IKD04N60RF
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3
V�2.6 2016-05-10
Datasheet
IKD04N60RF
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||14.2<br>9.1|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||12.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||12.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||9.7<br>5.9|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||12.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_c=25°C|_P_tot||75.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|2.00|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|4.50|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
V�2.6 2016-05-10
Datasheet
4
IKD04N60RF
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=4.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.20<br>2.30|2.50<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=4.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.10<br>2.00|2.40<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.07mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current1)|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>1000|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=4.0A|-|1.9|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|305|-|pF|
|Output capacitance|_C_oes||-|18|-||
|Reverse transfer capacitance|_C_res||-|9|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=4.0A,<br>_V_GE=15V|-|27.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=25°C|-|32|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=43.0Ω,_R_G(off)=43.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|12|-|ns|
|Rise time|_t_r||-|7|-|ns|
|Turn-off delaytime|_t_d(off)||-|116|-|ns|
|Fall time|_t_f||-|37|-|ns|
|Turn-on energy|_E_on||-|0.06|-|mJ|
|Turn-off energy|_E_off||-|0.05|-|mJ|
|Total switchingenergy|_E_ts||-|0.11|-|mJ|
1) Not subject to production test - verified by design/characterization
V�2.6 2016-05-10
Datasheet
5
IKD04N60RF
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �RC-Drives�Fast�Series
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=600A/µs|-|34|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.09|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|4.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-220|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=43.0Ω,_R_G(off)=43.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|11|-|ns|
|Rise time|_t_r||-|7|-|ns|
|Turn-off delaytime|_t_d(off)||-|128|-|ns|
|Fall time|_t_f||-|88|-|ns|
|Turn-on energy|_E_on||-|0.11|-|mJ|
|Turn-off energy|_E_off||-|0.08|-|mJ|
|Total switchingenergy|_E_ts||-|0.19|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=600A/µs|-|82|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.26|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-100|-|A/µs|
6
V�2.6 2016-05-10
Datasheet
IKD04N60RF
## TRENCHSTOP[TM]
**==> picture [476 x 341] intentionally omitted <==**
**----- Start of picture text -----**<br>
3.0<br>2.5 iim 10 ee<br>a |<br>ail NY a<br><_ : \ _s aTATeeeEET<br>2.0<br>B H ‘ aes P A<br>not for linear use<br>oOe Ta=55° \ oOeS T T<br>x 1.5 [— | x<br>Ww4 OWw4 1 eee a<br>S)O5 1.0 a a\ \ rs)5 aPTiTTTETTeei ee eelt<br>| a<br>0.5<br>N PIL EET LE<br>0.0 0.1<br>0.1 1 10 100 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V)<br>( T vj ≤ 175°C, T a =55°C, D =0.5, V CE=400V,<br>V GE =15/0V, r G=43 Ω , PCB mounting, 6cm2<br>Cu, Ptot=2,4W)<br>I C I C<br>**----- End of picture text -----**<br>
**==> picture [474 x 322] intentionally omitted <==**
**----- Start of picture text -----**<br>
80 16<br>70 14<br>60 12<br>= < NO<br>50 10<br>D © \<br>2) 40 ad 8<br>uw<br>iz Zanw\ : ‘<br>30 6<br>: : \<br>20 4<br>10 2<br>Eaaeae {44 tty<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 3. Power dissipation as a function of case Figure 4. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>P tot I C<br>**----- End of picture text -----**<br>
Datasheet
7
2016-05-10
IKD04N60RF
## TRENCHSTOP[TM]
**==> picture [469 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
12 12<br>VGE = 20V VGE = 20V<br>17V 17V<br>10 pS 10 Xe<br>15V 15V<br>13V 13V<br>8 8<br>11V 11V<br>9V 9V<br>7V 7V<br>6 6<br>4 4<br>2 2<br>0 0<br>0 1 2 3 4 0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=25°C)
Figure 6. Typical ( _T_ vj=175°C)
**==> picture [474 x 313] intentionally omitted <==**
**----- Start of picture text -----**<br>
12 4.0<br>Tj = 25°C IC = 1A<br>Tj = 175°C IC = 2A<br>3.5 IC = 4A<br>IC = 8A<br>10 ><br>e o ) iy, [E] é [E]<br>pl e<br>3.0<br>oon 20<br>8<br>2.5<br>PELE |e eee<br>6 2.0<br>&<br>1.5<br>i 4 | LAL pr<br>3 6S fo<br>1.0<br>i 2 Pf fe 2<br>0.5<br>a “ET tt |<br>0 0.0<br>4 6 8 10 12 14 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage<br>( V CE=10V) a function of junction temperature<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
( _V_ GE=15V)
8
Datasheet
2016-05-10
## IKD04N60RF
## TRENCHSTOP[TM]
**==> picture [474 x 643] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000 a SS ES ES ES 1000 a a a<br>aEe es | td(off) po<br>a tf<br>td(on)<br>po ee ee ee I eee<br>tr<br>Ne Ff<br>P oiSsh eeTE | ee Poof| [t] a ee [T] eee<br>100 td(off) -+-D 4 @ 100 |<br>ip)imz H |1 ttfd(on) eeaOSEaee ee ee ee =:ip)| ceaLi = [eer] a ee ed ee ee| eee<br>=- I tr ne ee es eee = aeees ee<br>a e e<br>OQ S e I es ee a a ee ee ee ee ee<br>=<br>E E eo<br>e e ee<br>10 10<br>7 he 7 a<br>aa es a eses<br>aa eePeee aee aea aee aeeeeeee<br>ee ee ce a ee ee ee<br>Pot ft | hm] | || Po; | UT [TT]<br>1 1<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V,=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=43=43 Ω , Dynamic test circuit in V GE =15/0V, I C =4A, Dynamic test circuit in<br>Figure E) Figure E)<br>1000 aaa 7<br>| 1 td(off)d(off) aaa ee ee ee typ.<br>I tff p o — min.<br>td(on)d(on) max.<br>trr<br>F hee S 6 =<br>| p o Ww<br>I PRS<br>2 100 a eS eS 5 ~~<br>ip) ae ee ee ie ee (oe) TS<br>uw a a ee Re<br>—== enaa a ee ee ee eee 7) ae ——<br>- ee eee eee ee ee ee ee Wy a ae<br>4<br>Q re ee ee ee ee ee :: =o — a<br>= ee ee ~sL<br>= a a<br>ee in<br>2)-- 10 aaa eseeee = 3 ><br>E e ee e s rr errr Ww<br>eeaa ee |<br>a ee se x<br>eseo)eo)<br>2<br>1 1<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
**==> picture [249 x 330] intentionally omitted <==**
**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V CE=400V,=400V,<br>V GE =15/0V, r G=43=43 Ω , Dynamic test circuit in<br>Figure E)<br>1000 aaa<br>| 1 td(off)d(off) aaa ee ee ee<br>I tff p o —<br>td(on)d(on)<br>trr<br>F hee S<br>| p o Ww<br>I<br>2 100 a eS eS<br>ip) ae ee ee ie ee (oe)<br>uw a a ee<br>—== enaa a ee ee ee eee 7)<br>- ee eee eee ee ee ee ee Wy<br>Q re ee ee ee ee ee ::<br>= ee ee<br>= a<br>ee<br>2)-- 10 aaa eseeee =<br>E e ee e s rr errr Ww<br>eeaa ee |<br>a ee se x<br>eseo)eo)<br>1<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11.
Figure 12.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =4A, _r_ G=43 , Dynamic test circuit in Figure E)
( _I_ C=0,07mA)
9
Datasheet
2016-05-10
IKD04N60RF
## TRENCHSTOP[TM]
**==> picture [474 x 660] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.20 0.3<br>Eoff Eoff<br>Eon Eon<br>| Ets [7] Ets<br>7<br>a JL _ -“<br>— 0.15 a Ss “7 “—<br>Ww Y Ww oa<br>7)o y / 7p)7) 0.2 De<br>O 5 O ae<br>a y aa Loo<br>> 4 > Lc<br>~ 7 Za x a<br>WwW 0.10 > WwW =<br>z 7 Za Zz _<br>Ww y 7 uw Lai<br>Zz ‘ _—| 2 aT<br>x= 7 = < 0.1 _<br>= / 7 | = aT<br>S| 0.05 pe ee<br>an<br>0.00 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=43 Ω , Dynamic test circuit in V GE =15/0V, I C =4A, Dynamic test circuit in<br>Figure E) Figure E)<br>0.20 0.25<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>0.20<br>£ 0.15 e] | Le _ £& a<br>nm 2 nm a<br>dp) a (dp) “7<br>(7p) peat (7p) wa<br>oO poe (e) a<br>i ea i 0.15 ><br>ow a ow _<br>uw 0.10 Lu _—<br>Zz _ Zz a<br>Lu _ _— Lu _—<br>0.10<br>= —<br>2efor-- + _| 2= a TIE<br>— E -<br>Es [oT Ts= coon<br>0.05<br>0.05<br>0.00 0.00<br>25 50 75 100 125 150 175 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>E E<br>E E<br>**----- End of picture text -----**<br>
Figure 16. Typical switching energy losses as function of collector emitter voltage (inductive load, _T_ vj =175°C, _V_ GE=15/0V, _I_ C =4A, _r_ G=43 , Dynamic test circuit in Figure E)
**==> picture [91 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
V CE =400V, V GE=15/0V,<br>**----- End of picture text -----**<br>
**==> picture [51 x 19] intentionally omitted <==**
**----- Start of picture text -----**<br>
I C =4A, r G=43<br>Figure E)<br>**----- End of picture text -----**<br>
10
Datasheet
2016-05-10
IKD04N60RF
## TRENCHSTOP[TM]
**==> picture [472 x 642] intentionally omitted <==**
**----- Start of picture text -----**<br>
18 jt 1000 a a<br>— VV CCCC =- 120V pT a a<br>16 r y a eeee ee<br>s 14 ( Cies 0ee<br>Coes<br>1) 12 A — 100 Cres<br>re)I J Ww= e A e<br><<S anney / | oO5 PN c e<br>iw 10 / 7 z Seee<br>bE O N ~<br>8<br>E | a ee<br>ul x oe —<br>xo 6 " . 10 a es ed Te<br>-<br>ee<br>4 a<br>2<br>0 1<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=4A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>60 12<br>See Nee<br>ee ee<br>50 10<br>a 7 2 \<br>ia WA, uw<br>a Ss \<br>i A=e<br>40 8<br>4 Z D .<br>ie ee ee ee<br>O LZ D<br>=f ee<br>30 6<br>Ee LiL [et] a)ys Et LIN<br>D WaZ O<br>gtr tts Et<br>20 VA O 4<br>a AL EL<br>oe O \<br>e (lL ii | | ft | yg EEL tt tT AT LI<br>2 & \<br>10 2<br>a | |tte EN<br>Oe<br>0 0<br>12 14 16 18 20 10 11 12 13 14 15 16 17 18 19<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>I C(SC) t SC<br>**----- End of picture text -----**<br>
Figure 19.
**==> picture [117 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
( V CE 400V, start at T vj=25°C)<br>**----- End of picture text -----**<br>
Figure 20.
**==> picture [121 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
( V CE 400V, start at T vj=150°C)<br>**----- End of picture text -----**<br>
11
Datasheet
2016-05-10
IKD04N60RF
## TRENCHSTOP[TM]
**==> picture [475 x 264] intentionally omitted <==**
**----- Start of picture text -----**<br>
ST 1 War = Re<br>SU <4 aali<br>weZ ETa aA a D = 0.5 a 1 elei D = 0.5<br>x A Hi H x es2 1 A<br>fa A 0.2 a eS eT aAS 0.2<br>ul CT ee ccrnecithe 0.1 TTT ick ea 0.1<br>AA 7a<br>FTTT TM 0.05 2 ES 0.05<br>a |)22 aca 0.02 afcm 0.02 TC<br>SM ee se<br>Sea 0.1 0.01single pulse | 0.01single pulse<br>2 syoi Cn a eatLNht =Ea 0.1 mLBeAeRw gi<br>Zz ay | A Allie. ; 2 Wal mi ;<br>s e T s H T<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.492466 0.884411 0.589157 0.073673 ri[K/W]: 1.251705 1.749937 1.260868 0.252056<br>e a e: oe τ i[s]: 2.0E-4 mn 5.4E-4 2.1E-3 0.031658 1 4111 τ i[s]: care 1.4E-4 1.5E-4 9.4E-4 7.1E-3 n<br>0.01 0.01<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
> Figure 21. IGBT function ( _D_ = _t_ p/T)
Figure 22.
( _D_ = _t_ p/T)
**==> picture [235 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>Tj = 25°C, IF = 4A<br>Tj = 175°C, IF = 4A<br>~~<br>80<br>te TT T T<br>& S<br>LuEP Ng<br>=eee:~<br>60<br>a =<br>ee:<br>eee:<br>40<br>iSee<br>i<br>20<br>es|<br>0<br>400 600 800 1000 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
Figure 23. Typical of diode ( _V_ R=400V)
**==> picture [235 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.35<br>Tj = 25°C, IF = 4A<br>Tj = 175°C, IF = 4A<br>0.30<br>5 ~[_4e=<br>o un<br>Ww<br>O 0.25 tet t e<br>x<br>S<br>0.20<br>0.15<br>= Ez=<br>0.10 eT<br>Sb 0.05 +rT yy py<br>0.00<br>400 600 800 1000 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 24.
( _V_ R=400V)
12
Datasheet
2016-05-10
IKD04N60RF
## TRENCHSTOP[TM]
**==> picture [476 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
14 | 0<br>Tj = 25°C, IF = 4A Tj = 25°C, IF = 4A<br>EO] Tj = 175°C, IF = 4A oy LL E Tj = 175°C, I e F = 4A<br>12 PTE T J _= -100 ~<br>< Ley e RL TP<br>i os) \<br>ett eg L N<br>eit 10 ix -200 \<br>) ty ye ELA EL<br>Pll AB FN A<br>: 4) 8 [T ON<br>Bt 7 <£<br>oe 8 YEA < -300 L N<br>Bg LN<br>i 9<br>owPreera) EN<br>6 -400<br>PL vA Z| ~ N<br>ive eet} LEE ETT ER<br>+f<br>4 -500<br>rT it i tt y } LET TS<br>400 600 800 1000 1200 400 600 800 1000 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 25. Typical function ( _V_ R=400V)
Figure 26.
( _V_ R=400V)
**==> picture [474 x 303] intentionally omitted <==**
**----- Start of picture text -----**<br>
12 3.0<br>Tj = 25°C, VGE = 0V<br>Tj = 175°C, VGE = 0V<br>10<br>| | Le IF = 1A<br>Pt I 2.5 IF = 2A<br>IF = 4A<br>= 8 Ww IF = 8A<br>ef Tle |e yp<br>6Pe || | ft | kegs<br>S)5Qa 6 foDp} ysoOQ> 2.0 e Re<br>w ag<br>e= ||if | | =<br>wr (ag<br>4<br>ge“ | [|i] | | | 8g<br>-<br>1.5<br>Pi [ty] fy Ty<br>2<br>a eee<br>psy<br>0 1.0<br>|<br>0 1 2 3 4 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 27. Typical diode forward current as a function Figure 28. Typical diode forward voltage as a function<br>I F V F<br>**----- End of picture text -----**<br>
13
Datasheet
2016-05-10
IKD04N60RF
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## Package Drawing PG-TO252-3
**==> picture [391 x 283] intentionally omitted <==**
**==> picture [140 x 55] intentionally omitted <==**
**==> picture [129 x 40] intentionally omitted <==**
**==> picture [158 x 167] intentionally omitted <==**
**----- Start of picture text -----**<br>
MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br>
**==> picture [83 x 175] intentionally omitted <==**
**----- Start of picture text -----**<br>
DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>
14
V�2.6 2016-05-10
Datasheet
IKD04N60RF
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
**==> picture [189 x 170] intentionally omitted <==**
**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
15
V�2.6 2016-05-10
Datasheet
IKD04N60RF
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Revision�History**
IKD04N60RF
## **Revision:�2016-05-10,�Rev.�2.6**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2011-06-07|PreliminaryData sheet|
|2.2|2012-02-24|Final data sheet|
|2.3|2013-12-10|New value ICES max limit at 175°C|
|2.4|2014-02-26|Without PB free logo|
|2.5|2014-03-12|Storage temp-55...+150°C|
|2.6|2016-05-10|New maximum values Ic(Tc), IF(Tc)and Figure 4|
16
V�2.6 2016-05-10
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →