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IKD04N60RC2ATMA1
IGBT, 8 A, 2 V, 36.6 W, 600 V, TO-252 (DPAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP RC
- Power Dissipation: 36.6W
- Transistor Mounting: Surface Mount
- DC Collector Current: 8A
- Power Dissipation Pd: 36.6W
- Transistor Case Style: TO-252 (DPAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 8A
- Collector Emitter Voltage Max: 600V
- Automotive Qualification Standard: -
- Collector Emitter Voltage V(br)ceo: 600V
- Collector Emitter Saturation Voltage: 2V
- Collector Emitter Saturation Voltage Vce(on): 2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.249 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
IKD04N60RC2
## TRENCHSTOP[TM]
## **Features:**
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TRENCHSTOP [TM]<br>**----- End of picture text -----**<br>
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http://www.infineon.com/rc-d2<br>**----- End of picture text -----**<br>
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C<br>G<br>E<br>C<br>Nip<br>60g 22 4<br>> ad a,<br>G >,<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD04N60RC2|600V|4A|2V|175°C|K4DRC2|PG-TO252-3|
Datasheet www.infineon.com
2020-09-28
IKD04N60RC2
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||8.0<br>5.6|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||12.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||12.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||4.6<br>2.4|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||12.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±25|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||36.6<br>18.3|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|4.10|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|10.10|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=4.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.00<br>2.40|2.30<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=4.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.90<br>1.95|2.20<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.45mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|25<br>2500|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=4.0A|-|2.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|180|-|pF|
|Output capacitance|_C_oes||-|10|-||
|Reverse transfer capacitance|_C_res||-|7|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=4.0A,<br>_V_GE=15V|-|24.0|-|nC|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=49.0Ω,_R_G(off)=49.0Ω,<br>_L_σ=30nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|4|-|ns|
|Rise time|_t_r||-|9|-|ns|
|Turn-off delaytime|_t_d(off)||-|90|-|ns|
|Fall time|_t_f||-|41|-|ns|
|Turn-on energy|_E_on||-|0.10|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.14|-|mJ|
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=681A/µs|-|80|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|148.00|-|nC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|5.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-110|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=49.0Ω,_R_G(off)=49.0Ω,<br>_L_σ=30nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|4|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|98|-|ns|
|Fall time|_t_f||-|47|-|ns|
|Turn-on energy|_E_on||-|0.13|-|mJ|
|Turn-off energy|_E_off||-|0.05|-|mJ|
|Total switchingenergy|_E_ts||-|0.18|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=500A/µs|-|108|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|254.00|-|nC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-87|-|A/µs|
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IKD04N60RC2
## TRENCHSTOP[TM]
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40 8<br>35 Site 7<br>e EA<br>30 6<br>Wee EN<br>25 5<br>PP Ne EN<br>20 4<br>EN EN<br>15 3<br>cae SERN pt Ne<br>ee<br>10 2<br>PIN EN<br>5 1<br>0 PpEN CULE 0 EN<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Figure 2.<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ T vj ≤ 175°C)<br>12.0 12.0<br>VGE=20V VGE=20V<br>7 ]<br>17V 17V<br>10.0 15V 10.0 15V<br>13V 13V<br>11V 11V<br>8.0 8.0<br>9V 9V<br>7V 7V<br>6.0 6.0<br>4.0 4.0<br>2.0 2.0<br>PFO LAP<br>0.0 0.0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Figure 4.<br>( T vj=25°C) ( T vj=175°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
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IKD04N60RC2
## TRENCHSTOP[TM]
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12<br>Tj=25°C<br>Tj=175°C /<br>= [|] / /<br>10<br>/<br>x<br>8<br>x<br>a 6 f<br>4<br>fe) f<br>2<br>0<br>2 4 6 8 10 12 14<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=20V)
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5.0<br>IC=2A<br>4.5 IC=4A<br>IC=8A<br>z 4.0 ee<br>6 =<br>4 3.5<br>3.0<br>ow<br>Ee 2.5<br>ad<br>2.0<br>O<br>1.5<br>O<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 6.
( _V_ GE=15V)
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td(off) td(off)<br>tf tf<br>td(on) td(on)<br>tr tr<br>100 oe 100 a ss et es es<br>e e a es ee ee ee ee<br>ry Se a a a a<br>= poa Se eeeeee ryes poee Teee ee ee ee<br>” a ee ” P|<br>--= {| |vpn} pA<br>9foo LZ<br>Zz ~<br>== 10 poa hes == 10 poa es se eeeee La<br>n ae a ©) a a PS<br>- po - a ee ee re ee<br>a ee a ee es ee eo<br>a se ee ee a ee ee<br>a Pde| of | ft |<br>1 1<br>2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, R G=49 Ω , Dynamic test circuit in V GE =15/0V, I C =4A, Dynamic test circuit in<br>Datasheet Figure E) 7 Figure E)<br>t t<br>**----- End of picture text -----**<br>
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Datasheet<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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7<br>td(off) typ.<br>tf<br>td(on)<br>tr 6<br>I fo :<br>Oo<br><x<br>100 e a e FE<br>a 5<br>my a a ©)><br>5 a es Q<br>” po [OO] OT OG<br>> Jf | 4<br>i9 | | i | df WwW<br><= -<br>L<br>3<br>= 10 e s a<br>naa<br>-<br>a uw<br>a ss | 2<br>Oo<br>Pees eT :<br>1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE =15/0V, I C=4A, ( I C=0.45mA)=0.45mA)<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
( _I_ C=0.45mA)=0.45mA)
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R G=49<br>**----- End of picture text -----**<br>
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0.5 0.30<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>0.25<br>0.4<br>on , on<br>WwW o W -"<br>1p)(op) aa 1p)icp) 0.20 - a7<br>oi 0.3 ? aaoO o--"<br>> “ ><br>O ? O<br>oe a 2 oe<br>Ww ra a“ Ww 0.15 ‘<br>Zz a a Zz _—<br>ul ? a ul -—<br>Zz) 0.2 o ? 7 ed Zz) -— -<br>: “Tee : 0.10<br>= and =<br>= ae a =<br>(op) o* 2 (op)<br>a ° a” .<br>0.1<br>0.05<br>0.0 0.00<br>2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, R G=49 Ω , Dynamic test circuit in V GE =15/0V, I C =4A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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Datasheet<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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0.30 0.30<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>0.25 0.25<br>2<br>E E “<br>ie) (a) /<br>Ww Lu ¢<br>io)7) 0.20 7)8 0.20 Y ?<br>9 aa , a<br>0.15 0.15<br>ff ff y “ a<br>g=r 0.10 _-— gam 0.10 oa 2 a a<br>5 5 o ys Pa<br>-<br>0.05 0.05<br>0.00 0.00<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
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(inductive load, V CE =400V, V GE=15/0V,<br>I C =4A, R G=49 , Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 14.
(inductive load, _T_ vj =175°C, _V_ GE=15/0V, _I_ C =4A, _R_ G=49 , Dynamic test circuit in Figure E)
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16 1000 a a<br>14 ——— VV CCCC =-= 480V120V / / ti|I CCCiesoesres aaaeeaa ee<br>a ee es<br>yo p o<br>=s 12 fy r [ttte<br>100<br>F 10 & Ca ee<br>S$ fy O ee<br>W 8 Ty 2 a<br>i =O Se‘ ee<br>=<br>: 6 © >><br><x 10 a a<br>.<br>4 | ee<br>2<br>a<br>0 1<br>0 5 10 15 20 25 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=4A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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40 10<br>Pt|te<br>|<br>= 35 P| | f | dy _ PT TT ET<br>x= 7 = Te<br>bE zg. el<br>D=0.5<br>g 30 4 |} COU7<br>0.2<br>1 0.1<br>S 25 va 7 Ml 0.05<br>O / —_G }p—_|RS ff eetae tee eee<br>5 aa<br>rf rd Pager 0.02 CO<br>4 7 pt eer 0.01 LTT<br>20<br>fe = me fe ee single pulse LUT<br>- Fa Zo = Ae mill<br>3 ee) Bae) aaa<br>2 15 | : Vag aw<br>ae0 :a 0.1 PVMiiealllApalieae<br>b aa) — a |<br>ad 10 2 pe ari R, rR, TH<br>oO5 sF meaAA e A aeelieee GHG -- inlil<br>.<br>° e n<br>5<br>PTAA [AI] [E] [TET] eee [PTT] ELTeel<br>i: 1 2 3 4 5<br>ri[K/W]: 0.18941 3.1551 0.74685 0.046332 8.4E-4<br>τ i[s]: 9.4E-5 5.2E-4 2.4E-3 0.07379975 4.060063<br>0 Pt tt tl 0.01 VA (i|<br>12 13 14 15 16 17 18 1E-6 1E-5 1E-4 0.001 0.01<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical short circuit collector current as a Figure 18. IGBT transient thermal resistance<br>function of gate-emitter voltage ( D = t p/T)<br>( V CE 400V, T vj 150°C)<br>200<br>Tj=25°C, IF = 4A<br>10 Tj=175°C, IF = 4A<br>Tin EAaTTT<br>175<br>NaWw ase D=0.5 |<br>9 Hea TH _ 150<br>0.2<br>< a ee ll<br>0.1<br>a acm<br>2a 1 eoFoILeee,geaeee ee 0.050.02 = me 125 Ls \<br>ESY erPT ee 0.01 COi oO5 100 '<br>Wi ee eee ee single pulse Wy<br>F a 7A atl zal Nex<br>6z7 0.1 meeLe oatlWray(AMUN 00ae NT | I) rte& 75 SS—~<br>Z SSeeeeh ae cil teat ae 50 Sss.)<br>s ee | —7 Hf - ‘<br>oe Coe oo il “2<br>~ aPA|I PT || cy ehre, costes |i<br>FAY) OC 25<br>i: 1 2 3 4 5<br>ri[K/W]: 1.8525 6.3856 1.8096 0.084955 8.5E-4<br>τ i[s]: 4.1E-5 2.2E-4 1.4E-3 0.03900088 4.088283<br>"|<br>0.01 0<br>(| | ee<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 300 600 900 1200 1500 1800 2100 2400 2700<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 19. Diode transient thermal impedance as a Figure 20. Typical reverse recovery time as a function<br>function of pulse width of diode current slope<br>( D = t p/T) ( V R=400V)<br>I C(SC) Z c)th(j-<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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350 20<br>Tj=25°C, IF = 4A Tj=25°C, IF = 4A<br>Tj=175°C, IF = 4A 18 Tj=175°C, IF = 4A<br>300<br>e a r 16 PT T<br>Ooi -— — x TT Leé<br>Lu 7 - Zz- 77<br>250<br>14<br>O<br>12<br>PPL)>O 200 | Lye| Ee<br>- mo EL 10<br>Oo2p) :Ww iw<br>a 150 oOeae 8<br>uw: bfi 6 |<br>rf 100 > / La<br>; i<br>4<br>Saaeeeee °<br>50<br>2<br>0 0<br>300 600 900 1200 1500 1800 2100 2400 2700 300 600 900 1200 1500 1800 2100 2400 2700<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 21. Typical function ( _V_ R=400V)
Figure 22.
( _V_ R=400V)
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0<br>Tj=25°C, IF = 4A<br>-100 Tj=175°C, IF = 4A<br>-200<br>Ne<br>E N<br>-300<br>“ \<br>2 \ <<br>& -400<br>%<br>2 N a<br>-500<br>x© \S ingre)Q<br>8 s s<br>ro -600 Ss<br>o oeiD<br>8 iD<br>-700<br>-800<br>-900<br>EERE<br>-1000<br>300 600 900 1200 1500 1800 2100 2400 2700<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
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12<br>Tj=25°C<br>Tj=175°C<br>10<br>i<br>E 8 f<br><<br>xa<br>6<br>re)QQ<br>ingre)Q /i<br>s /<br>Ss<br>oeiD 4 i;<br>2<br>e= ae<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>V F , FORWARD VOLTAGE [V]<br>I F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=400V)
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## TRENCHSTOP[TM]
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3.5<br>IF=2A<br>IF=4A<br>IF=8A<br>3.0<br>2.5<br>Oo<br><x<br>Kk<br>i 2.0<br>><br>Q<br>a<br><x<br>1.5<br>[a<br>e)<br>LL<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## Package Drawing PG-TO252-3
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MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br>
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DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## **Revision�History**
IKD04N60RC2
## **Revision:�2020-09-28,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2020-09-28|Final data sheet|
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## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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