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IKD03N60RFATMA1
IGBT, 6.5 A, 2.2 V, 53.6 W, 600 V, TO-252 (DPAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP RC
- Power Dissipation: 53.6W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-252 (DPAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 6.5A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.262 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT
IKD03N60RF TRENCHSTOP[TM]
## IKD03N60RF
## TRENCHSTOP[TM]
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Features:<br>TRENCHSTOP [TM] Reverse Conducting (RC)<br>applications offering<br>¢ Optimized Eon, Eoff and Qrr for low switching<br>¢ Operating range of 4 to 30kHz<br>* Smooth switching performance leading to low<br>* Very tight parameter distribution<br>* Maximum junction temperature 175°C<br>¢ Short circuit capability of 5us<br>¢ Best in class current versus package size<br>* Qualified according to JEDEC for target<br>¢ Pb-free lead plating; ROHS compliant (solder<br>http://www.infineon.com/igbt/<br>Complete product spectrum and PSpice Models:<br>Applications:<br>**----- End of picture text -----**<br>
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C<br>G<br>E<br>C<br>i<br>“Cp heap<br>S =<br>| ay<br>G<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD03N60RF|600V|2.5A|2.2V|175°C|K03R60F|PG-TO252-3|
Datasheet www.infineon.com
2016-05-10
IKD03N60RF
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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Datasheet
IKD03N60RF
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_C||6.5<br>6.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||7.5|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||7.5|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||6.3<br>3.9|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||7.5|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_c=25°C|_P_tot||53.6|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|2.80|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|6.80|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
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Datasheet
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=2.5A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.20<br>2.30|2.50<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=2.5A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.10<br>2.00|2.40<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.05mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current1)|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>1000|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=2.5A|-|1.3|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|200|-|pF|
|Output capacitance|_C_oes||-|13|-||
|Reverse transfer capacitance|_C_res||-|7|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=2.5A,<br>_V_GE=15V|-|17.1|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=25°C|-|23|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=68.0Ω,_R_G(off)=68.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|10|-|ns|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|128|-|ns|
|Fall time|_t_f||-|93|-|ns|
|Turn-on energy|_E_on||-|0.05|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.09|-|mJ|
1) Not subject to production test - verified by design/characterization
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Datasheet
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.5A,<br>_di_F_/dt_=470A/µs|-|31|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.06|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|3.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-196|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=2.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=68.0Ω,_R_G(off)=68.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|9|-|ns|
|Rise time|_t_r||-|9|-|ns|
|Turn-off delaytime|_t_d(off)||-|142|-|ns|
|Fall time|_t_f||-|123|-|ns|
|Turn-on energy|_E_on||-|0.08|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.14|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=2.5A,<br>_di_F_/dt_=470A/µs|-|66|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.19|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-125|-|A/µs|
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Datasheet
IKD03N60RF
## TRENCHSTOP[TM]
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2.5 10 a<br>ee el<br>pe<br>Bill et 4 TT<br>2.0 S|TIEN | |Aeel<br>we | lll nt - FA<br>SACU<br>}h Pi| fT<br>1.5 mBniiil E N LU<br>not for linear use<br>5 mill =) i—<br>Ta=55°C<br>| © 1 [TM<br>O _<br>Ee O a<br>O Ee ee eee el<br>1.0<br>mm ail \ O a e e<br>a \ mma a | eel<br>, CHET<br>0.5<br>a |<br>0.0 0.1<br>0.1 1 10 100 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V)<br>( T vj ≤ 175°C, T a =55°C, D =0.5, V CE=400V,<br>V GE =0/15V, R G=68 Ω , PCB mounting, 6cm2<br>Cu, Ptot=2,4W)<br>60 7<br>6<br>50<br>limited by bond wire<br>[—<br>5<br>40<br>3 ; \<br><xo oaa) 4<br>30<br>3<br>or= Smm<br>4 20 5<br>2<br>10<br>1<br>0 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 3. Power dissipation as a function of case Figure 4. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>
Datasheet
7
2016-05-10
IKD03N60RF
## ~~—RG-DrivesFastSeries~~ TRENCHSTOP[TM] =
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9 9<br>VGE = 20V VGE = 20V<br>8 ee 8 ee<br>17V 17V<br>15V 15V<br>7 7<br>SW Wy<br>13V 13V<br>6 6<br>11V 11V<br>o {? o<br>9V 9V<br>5 5<br>7V 7V<br>ESS YY<br>4 4<br>3 3<br>2 2<br>1 1<br>0 F R 0 | AS<br>0 1 2 3 4 0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE co covomennnen VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T vj=25°C) ( T vj=175°C)<br>9 4.0<br>Tvj = 25°C IC = 0.6A<br>Tvj = 175°C IC = 1A<br>8 3.5 IC = 2.5A<br>IC = 5A<br>ET]. Pv<br>7<br>T ye 3.0 e ee<br>6<br>e A e ee<br>2.5<br>5<br>pt I<br>2.0<br>4<br>jeer on||sasnaee<br>1.5<br>ae 3<br>1.0<br>2<br>1 / LL 0.5<br>Yi EE<br>0 | ft | 0.0 ELE<br>4 6 8 10 12 14 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Figure 8.<br>( Typical V CE=10V) transfer characteristic rypicat on of junction tompersture voltage as<br>( V GE=15V)<br>I C I C<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
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Datasheet
2016-05-10
IKD03N60RF
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
td(off)<br>tf<br>td(on) —<br>NL tr |<br>PX} Ee FEE<br>SSE] a<br>100<br>100 | SSS— =o S p eee r<br>g Cc td(off) f e<br>tf<br>Lu td(on) Lu<br>tr<br>#@ fe Ft ee Eee<br>Z2e |, ||. f{[jJe |ety<br>dé EE ees<br>PP ] Zz 10 Le<br>60° 10 edaSS| me PEeeeeeee<br>ae aaaee ee ee peti aoT oTa tT ET<br>SERRE Eee<br>1 1<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 20 30 40 50 60 70 80 90 100 110 120<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistance<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =0/15V, R Gon=68 Ω ; R Goff=68 Ω , dynamic V GE =0/15V, I C =2,5A, dynamic test circuit in<br>test circuit in Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
7<br>[— t — d(off) | | typ.<br>tf min.<br>td(on) max.<br>tr<br>= ff - 6 |= |<br>[aA<br>a e e<br>100<br>ee ee ee<br>p o I ~~<br>re ae<br>a aa ~SL LL<br>aa a es a 5 ———<br>” a eeeeee er — ek<br>- Lu<br>Ss {| | | | | | § To ——<br>es ee 4 ee<br>g z= CL |<br>5<br>10<br>aeeee ee 3 =<br>- a G7<br>a ss |<br>Po<br>eeee ee ee ee ee”)<br>2<br>1 1<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =2,5A, _R_ Gon=68 Ω ' _R_ Goff=68 Ω , dynamic circuit in Figure E)
Figure 12.
( _I_ C=0,05mA)
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Datasheet
2016-05-10
IKD03N60RF
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
0.25<br>Eoff<br>Eon<br>Ets<br>=" 7<br>mp) 0.20 7<br>& 7<br>“ Ve<br>nm /<br>7)<br>o 7<br>—! 0.15<br>OQ /<br>or 4<br>uw 7 Y<br>Zz y<br>0.10<br>2 “<br>© WY L<br>5 Areas<br>0.05<br>OF7 a<br>0.00<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>I C , COLLECTOR CURRENT [A]<br>E<br>**----- End of picture text -----**<br>
Figure 13.
(inductive load, _T_ vj =175°C, _V_ CE=400V, _V_ GE =0/15V, _R_ Gon=68 Ω ; _R_ Goff=68 Ω , test circuit in Figure E)
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**----- Start of picture text -----**<br>
0.20<br>Eoff<br>0.18 Eon<br>Ets<br>ELT a<br>ap) 0.16 Pa<br>& “7<br>op) peat<br>nm 0.14 4<br>7p) _<br>o Lar<br>—! 0.12<br>O a<br>or<br>uw 0.10 P<br>Zz Ele<br>0.08<br>=<br>e 0.06 — i<br>ane<br>0.04<br>0.02<br>PELLET EEL LEE<br>0.00<br>10 20 30 40 50 60 70 80 90 100 110 120<br>R G , GATE RESISTANCE [ Ω ]<br>Figure 14. Typical switching energy losses as a<br>function of gate resistance<br>(inductive load, T vj =175°C, V CE=400V,<br>V GE =0/15V, I C =2,5A, dynamic test circuit in<br>Figure E)<br>E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
0.16 0.18<br>Eoff Eoff<br>Eon Eon<br>0.14 Ets 0.16 Ets<br>0.14<br>:& 0.12 eT offlaw).cat = F |p1pe<br>nm a nm “<br>7)(op); pbk“7eo 7)(op); 0.12 7 Z -<br>0.10<br>aa] Lot aa] Y<br>> - > 4<br>0.10<br>0.08<br>ai _— a 0.08 7 =<br>) a e) “ 2<br>0.06<br>‘ — _—— z a -<br>=Pe > = - xr 0.06 4 a ——___|<br>0.04<br>fotT |é ot<br>0.04<br>0.02<br>0.02<br>0.00 0.00<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 15.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =2,5A, _R_ Gon=68 Ω ' _R_ Goff=68 Ω , dynamic circuit in Figure E)
Figure 16.
(inductive load, _T_ vj =175°C, _V_ GE=0/15V, _I_ C =2,5A, _R_ Gon=68 Ω ' _R_ Goff=68 Ω , dynamic circuit in Figure E)
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Datasheet
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IKD03N60RF
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
18 ss 1000 a a<br>— VV CCCC =- 120V | 1I CCiesoes a a a a eea eea<br>16 Cres<br>| . I a ee ee ee<br>14 {| a a e e<br>=<br>/<br>12 100<br>ke Qa a QQ<br>i J — a<br>re) / Ww a a<br>Sna 10 y, / oOz DSa es<br>8<br>: — a<br>Ww < NN ed ee<br>x 6 10<br>a<br>i) . Po<br>/ a es<br>4 a ee<br>2<br>0 1<br>0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 17. Typical ( _I_ C=2,5A)
Figure 18.
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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>
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50 12<br>S 45 Z 10 PRE~<br>: EE EL Ly<br>40<br>aciep—Ys PIN\ FT | | | yy<br>: 35 =<br>8<br>| 47 Fe FEN TTL<br>SB ral<br>; 30 fe ef KN<br>oO WA 7p)<br>3: 25 ZO =ef) 6 QI\<br>©5 20 |pe}tt tg EL UN<br>g ZO 3<br>4<br>Piet 15 | 7 tt eKés \<br>Ee ke<br>(e)2 10 rTPTT) -_85 PteEE KE\<br>2<br>= 5 TTT TT PPL EN<br>0 0<br>pt eee ey EERE EERE<br>12 13 14 15 16 17 18 19 20 10 11 12 13 14 15 16 17 18 19<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC) t SC<br>**----- End of picture text -----**<br>
Figure 19.
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**----- Start of picture text -----**<br>
( V CE 400V, start at T vj=25°C)<br>**----- End of picture text -----**<br>
Figure 20.
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**----- Start of picture text -----**<br>
( V CE 400V, start at T vj=150°C)<br>**----- End of picture text -----**<br>
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IKD03N60RF
TRENCHSTOP[TM]
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= 1 secHATA Lt} Se aer este esel 7 40ME<br>uw A uw LY Vi, ra |<br>) CCI CTI aT SST D = 0.5 | re) YY TAHA UAT Af | lll D = 0.5<br>Zzrn |Eh/A 0.20.1 | 1 eA=H | YI itn 0.20.1<br>= eT toaah aa<br>2 TI 0.05 2 0.05<br>0.02 0.02<br>0.01 0.01<br>= NB S PrN CORP Mera HITT<br>ge 0.1 ae single pulse IT ELC ee single pulse<br>=6 IMMAEHPrecet = CMeea<br>a a ( er HHa 0.1 allwipeAt | Ivip |‘il<br>B PTT rTM Leer ec TPT Gy Eee<br>2 a e Z zm Hl 2 ET eee CCETTE Ril<br>s a 20 --|l| 3 A -- |l|<br>ae 20<br>a le A<br>a a / Biiiiimniiimni<br>ST LATA ETVTIN TIN LUT LMT TATU<br>i: 1 2 3 4 5 6 7 i: 1 2 3 4 5 6 7<br>ri[K/W]: 0.015751 1.14785 1.341315 0.237182 0.041914 6.2E-3 2.2E-3 ri[K/W]: 0.600659 4.018125 1.846211 0.289559 0.043754 6.0E-3 2.1E-3<br>τ i[s]: 1.2E-5 2.3E-4 1.1E-3 6.0E-3 0.047561 0.288161 1.246755 τ i[s]: 4.2E-5 1.9E-4 1.1E-3 6.1E-3 0.048469 0.301349 1.300555<br>0.01 0.01<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 21. IGBT transient thermal impedance as a Figure 22. Diode transient thermal impedance as a<br>function of pulse width (see page 4) function of pulse width (see page 4)<br>( D = t p/T) ( D = t p/T)<br>80 ee 0.20<br>Tvj = 25°C, IF = 2.5A<br>Tvj = 175°C, IF = 2.5A 0.18<br>[pe] ELL<br>70<br>\ —<br>o> ) | ey<br>0.16<br>oe<br>60<br>ze + et<br>0.14<br><PP 50 ON : ee TTvjvj = 25°C, I = 175°C, IF = 2.5AF = 2.5ATvjvj = 25°C, I = 175°C, IF = 2.5AF = 2.5Avjvj = 25°C, I = 175°C, IF = 2.5AF = 2.5Avj = 25°C, I = 175°C, IF = 2.5AF = 2.5A = 25°C, I = 175°C, IF = 2.5AF = 2.5A = 175°C, IF = 2.5AF = 2.5AF = 2.5AF = 2.5A = 2.5AF = 2.5AF = 2.5A = 2.5A<br>0.12<br>ee 40 0.10<br>: oe eee<br>0.08<br>po 30 Le ti<br>0.06<br>[7S Ler<br>20<br>0.04<br>Saaeeenn —<br>10<br>0.02<br>0 0.00<br>400 500 600 700 800 900 1000 400 500 600 700 800 900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>c)th(j- c)th(j-<br>Z Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
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0.20<br>0.18<br>ELL<br>—<br>| ey<br>0.16<br>et<br>0.14<br>ee TTvjvj = 25°C, I = 175°C, IF = 2.5AF = 2.5ATvjvj = 25°C, I = 175°C, IF = 2.5AF = 2.5Avjvj = 25°C, I = 175°C, IF = 2.5AF = 2.5Avj = 25°C, I = 175°C, IF = 2.5AF = 2.5A = 25°C, I = 175°C, IF = 2.5AF = 2.5A = 175°C, IF = 2.5AF = 2.5AF = 2.5AF = 2.5A = 2.5AF = 2.5AF = 2.5A = 2.5A<br>0.12<br>0.10<br>eee<br>0.08<br>ti<br>0.06<br>Ler<br>0.04<br>—<br>0.02<br>0.00<br>400 500 600 700 800 900 1000<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 23. Typical of diode ( _V_ R=400V)
Figure 24.
( _V_ R=400V)
12
Datasheet
2016-05-10
IKD03N60RF
## TRENCHSTOP[TM]
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10 ee | 0 es<br>Tvj = 25°C, IF = 2.5A Tvj = 25°C, IF = 2.5A<br>Tvj = 175°C, IF = 2.5A Tvj = 175°C, IF = 2.5A<br>9 TS<br>| yo Z -100 |<br><x 7 Ed aN<br>8<br>5 Zz<br>rd 7 7 7 \<br>C 7 Oo -200 \<br>7 ix<br>O > 2 NOS<br>> 6 Za tu -300<br>Oo<br>a 5 x<br>-400<br>ef a <Q XY<br>oo<br>4<br>| s nN<br>K<br>-500<br>3<br>2 -600<br>400 500 600 700 800 900 1000 400 500 600 700 800 900 1000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 25. Typical reverse recovery current as a Figure 26. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>9 2.8<br>Tvj = 25°C, VGE = 0V<br>8 Tvj = 175°C, VGE = 0V 2.6<br>eG<br>7 SY ee 2.4 e I e F = 0.6A ee<br>IF = 1A<br>ef | IF = 2.5A<br>EK 6 Wi fe 2.2 ief IF = 5A o<br>si LP Ww<br>: gS for<br>re)5 5 y oO> 2.0<br>rat 4 aa / Ae raQ<x 1.8 et tt ft tf<br>& ©<br>3 1.6<br>" / ‘LET<br>2 1.4<br>1 1.2<br>7<br>0 1.0<br>0 1 2 3 4 0 25 50 75 100 125 150 175<br>V F ,FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>I F V F<br>**----- End of picture text -----**<br>
Figure 27.
Figure 28.
13
Datasheet
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IKD03N60RF
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## Package Drawing PG-TO252-3
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MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br>
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DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>
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V�2.6 2016-05-10
Datasheet
IKD03N60RF
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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V�2.6 2016-05-10
Datasheet
IKD03N60RF
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## TRENCHSTOP[TM] �RC-Drives�Fast�Series
## **Revision�History**
IKD03N60RF
## **Revision:�2016-05-10,�Rev.�2.6**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2011-06-07|PreliminaryData sheet|
|2.2|2012-02-23|Final data sheet|
|2.3|2013-12-10|New value ICES max limit at 175°C|
|2.4|2014-02-26|Without PB free logo|
|2.5|2014-03-12|Storage temperature -55...+150°C|
|2.6|2016-05-10|New maximum values Ic(Tc), IF(Tc)and Figure 4|
16
V�2.6 2016-05-10
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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