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IKB40N65ES5ATMA1
IGBT, 79 A, 1.35 V, 230 W, 650 V, TO-263 (D2PAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:79A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:230W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263; No. of Pins
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 230W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 79A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.51 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## IKB40N65ES5
th
## TRENCHSTOP[TM]
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« Very Low V CEsat , 1.35V at nominal current<br>* 650V breakdown voltage<br>«Low Q G<br>¢ IGBT copacked with full rated current RAPID 1<br>diode<br>* Maximum junction temperature 175°C<br>¢ Pb-free lead plating; ROHS compliant<br>http://www.infineon.com/igbt/ *« Complete product spectrum and PSpice Models:<br>**----- End of picture text -----**<br>
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C<br>G<br>E<br>C<br>G) y<br>7026 COn<br>K9<br>fe, /- rt<br>f a<br>Piset<br>G<br>s<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKB40N65ES5|650V|40A|1.35V|175°C|K40EES5|PG-TO263-3|
Datasheet www.infineon.com
2018-04-04
IKB40N65ES5
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## High�speed�switching�series�5[th] �generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
IKB40N65ES5
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## High�speed�switching�series�5[th] �generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||79.0<br>50.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||160.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||160.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax1)<br>_T_c=25°C<br>_T_c=100°C|_I_F||40.0<br>40.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||160.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||230.0<br>115.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.65|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.75|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) value limited by bondwire
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Datasheet
IKB40N65ES5
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## High�speed�switching�series�5[th] �generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.50<br>1.60|1.70<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.42<br>1.39|1.70<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>2000|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|45.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2500|-|pF|
|Output capacitance|_C_oes||-|71|-||
|Reverse transfer capacitance|_C_res||-|9|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|95.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|130|-|ns|
|Fall time|_t_f||-|23|-|ns|
|Turn-on energy|_E_on||-|0.86|-|mJ|
|Turn-off energy|_E_off||-|0.40|-|mJ|
|Total switchingenergy|_E_ts||-|1.26|-|mJ|
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## High�speed�switching�series�5[th] �generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|7|-|ns|
|Turn-off delaytime|_t_d(off)||-|143|-|ns|
|Fall time|_t_f||-|24|-|ns|
|Turn-on energy|_E_on||-|0.39|-|mJ|
|Turn-off energy|_E_off||-|0.21|-|mJ|
|Total switchingenergy|_E_ts||-|0.60|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=820A/µs|-|73|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.10|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|23.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1500|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=750A/µs|-|58|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|22.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1740|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|156|-|ns|
|Fall time|_t_f||-|48|-|ns|
|Turn-on energy|_E_on||-|1.20|-|mJ|
|Turn-off energy|_E_off||-|0.69|-|mJ|
|Total switchingenergy|_E_ts||-|1.89|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|184|-|ns|
|Fall time|_t_f||-|48|-|ns|
|Turn-on energy|_E_on||-|0.60|-|mJ|
|Turn-off energy|_E_off||-|0.39|-|mJ|
|Total switchingenergy|_E_ts||-|0.99|-|mJ|
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Datasheet
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## High�speed�switching�series�5[th] �generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=820A/µs|-|120|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|2.60|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|36.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1250|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=750A/µs|-|91|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|32.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1350|-|A/µs|
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IKB40N65ES5
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240 80<br>210 NE 70 Nea<br>_pf 180150 PNNe\ _<x 6050 LNLN<br>a5<br>pfooON ye EN<br>2ef 120 wz 40 .<br>90 30<br>oo NU ye EN<br>:<br>COCA CEES\<br>60 20<br>ONG EN<br>30 10<br>PT TEEN EEEETi<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>120 120<br>VGE = 20V VGE = 20V<br>ae 18V | ee ee 18V<br>A |<br>100 15V fo 100 15V |4a<br>12V 12V<br>_ oo Uf 7<br>10V 10V<br>80 80<br>< i] dE W/<br>8V 8V<br>7V 7V<br>60 60<br>6V 6V<br>5V 5V<br>40 40<br>20 20<br>peat LP<br>0 0<br>|A LN} | LAA\ —_<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=150°C)
Datasheet
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120<br>Tvj = 25°C<br>Tvj = 150°C<br>EJ.<br>100 Po o<br>ee Fe<br>ee<br>eeee<br>80<br>im |<br>ee ee<br>.gS fo<br>a 60<br>i ee<br>Mm4 !<br>= 40 eS<br>i<br>SR<br>20<br>Se<br>0<br>2 3 4 5 6 7 8 9 10<br>V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical transfer characteristic<br>( V CE=20V)<br>I C<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
3.0<br>IC = 20A<br>IC = 40A<br>IC = 80A<br>eee<br>ce 2.5<br>zee<br>ll =<br>ee ee<br>2.0<br><rE<br>ee<br>E fe<br>Ee 1.5<br>Ss) 1.0 a ee re e<br>(e)<br>0.5<br>eee eee<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 6.
( _V_ GE=15V)
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**----- Start of picture text -----**<br>
1000 aa 1000<br>| 1 td(off) a aee ee ee |i td(off) a a aee ee es<br>I tf p o | tf a ee ee eee<br>td(on) td(on)<br>tr tr<br>F p = |e<br>| a ee ee ee ee | SE ——SEEEEs<br>p e P ea<br>2= 100 C Pf ht hh e s = 100 e aeea ee<br>ip) a Ne ee ee ee ip) po<br>uw ae Se <n a a<br>= a a a eee = a ee ee ee ee eee<br>- a eea ee en il led eee tie<br>Q a ee P| | eer mepee<br>so cae a ee<br>E E “m<br>ele EE<br>2)° 10 aa aae 2)° 10 aa ss<br>po po<br>aa<br>aa es a eeee<br>ee es a ee ee<br>a P| tT tT<br>1 1<br>0 20 40 60 80 100 120 0 10 20 30 40 50 60 70<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>t t<br>**----- End of picture text -----**<br>
Figure 7.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ Gon=10 Ω ; _R_ Goff=10 Ω , test circuit in Figure E)
Figure 8. Typical **resistance**
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**----- Start of picture text -----**<br>
T vj =150°C, V CE=400V,<br>**----- End of picture text -----**<br>
_V_ GE =0/15V, _I_ C Figure E)
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**----- Start of picture text -----**<br>
1000 aa 6<br>| 1 td(off) a aee aee ee typ.<br>I tf a ee ee ee eee _<br>I td(on) a ee<br>tr 5<br><x<br>a :<br>z— 100 fTne ee es| ee| ee— Kk:> 4<br>ip) se i<br>im poa a a (e)<br>= a es ee ee oO<br>F a es ee Wy<br>3<br>OQ a ee ee ee<br><== oe-_— ee -<br>= La<br>ef2)7 10 poreps a eS Ww= 2<br>ee<br>a ee se x<br>a eseo)<br>Oe es 1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9.
Figure 10.
**==> picture [471 x 330] intentionally omitted <==**
**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=0/15V, ( I C=0.4mA)<br>I C =40A, R Gon=10 Ω ; R Goff=10 Ω , dynamic test<br>circuit in Figure E)<br>8 3.5<br>Eoff Eoff<br>Eon Eon<br>7 | Ets Ets 7<br>3.0<br>ap) a ap) ¢<br>E 6 °<br>Ww n / Lun 2.5 o<br>(7) / io) of<br>—! 5 7 —! oo<br>> / > 2.0 =<br>0) / (o) -- -<br>w 7 ia “7 -<br>2 4 2 lo -<br>oO / 7 oO 1.5 a<br>Zz 3 ‘ Zz -<br>= 3 W4 r -<br>oO Y oO 7<br>1.0<br>2<br>j 4 7 —<br>4Oe7 | |<br>0.5<br>1 va 7 aa =<br>7 —<br>gc<br>0 0.0<br>0 20 40 60 80 100 120 0 10 20 30 40 50 60 70<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>E E<br>**----- End of picture text -----**<br>
Figure 11.
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, R Gon=10 Ω ; R Goff=10 Ω ,<br>test circuit in Figure E)<br>**----- End of picture text -----**<br>
Figure 12.
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, I C =40A, dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
2.5 2.5<br>Eoff Eoff<br>Eon Eon 7<br>Ets Ets “<br>¢<br>_£ 2.0 we | _OE 2.0 va<br>(op) oor on ”<br>Ww > WwW ?<br>a -* a “<br>fe) wee fe) “<br>—!> 1.5 7> —!> 1.5 ¢ r<br>ui -- = ul 5 ? a<br>uw =_—— a uw “ 7<br>oO2Bo 1.0 -_— —— oOZ 1.0 7 “ 7 a<br>E es Z —_|<br>= = = —<br>° TT ° a —<br>0.5 ones OO eeee 0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 200 260 320 380 440 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =40A, _R_ Gon=10 Ω ; _R_ Goff=10 Ω , dynamic circuit in Figure E)
Figure 14.
(inductive load, _T_ vj =150°C, _V_ GE=0/15V, _I_ C =40A, _R_ Gon=10 Ω ; _R_ Goff=10 Ω , dynamic circuit in Figure E)
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16<br>V CC Cies<br>_—— V CC = 520V V4 1E+4 H Coes ———<br>14 tt Cres aa ee<br>/ a<br>/ a SS eSee A<br>S 12<br>)~ _ 1000 EE<br>kK— 10 / Lejos seCsee<br>9S _— a a a<br>wv / rc<br>: Z |S A<br>8<br>a ee<br>100<br>= o ee es<br>uw' 6 f | &O a<br>= ~ A ee ee ee<br>5 Ne eee<br>4<br>10<br>a ss<br>aa<br>2 aee ee ee<br>0 1<br>0 20 40 60 80 100 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 15. Typical ( _I_ C=40A)
Figure 16.
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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>
10
Datasheet
2018-04-04
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**----- Start of picture text -----**<br>
IKB40N65ES5<br>° ies 5 th gen eration<br>1 1<br>FH FEE !<br>bri<br>Sey St Sa Ge See, = Eel<br>= Se=L t tee =r iacama t ien Smt S oNeeeei ect20 Bat at<br>st y = DZ!MI iil<br>z<br>ri HLCP i z THT<br>Se a NGEe Se D = 0.5 cantHoar ra)= CTO D = 0.5 i |<br>0.1 WF V/s Css 0.1 |<br>< Ha 0.2 mul eS 0.2 fp<br>CH —~Y eet cn<br>— STR 0.1 mal |: BU AlN 0.1 SuiHori Ste<br>fn ade ane eamtian < TT]<br>0.05 0.05<br>iouaytN & |Srsh)mail|ii rrSue7c itil<br>2 Sly sect i 0.02 0.02<br>3 Sema’ Ae ee = anePN] ie nil mill<br>0.01 0.01<br>single pulse single pulse<br>i:aeFoheey Hf Wy auHi Cu &E HyTl ‘)7 AineHi Bh |<br>2 0.01 Ce SiS 0.01<br>D: ofEHHBilli fiissHEE a llii i @ actECACSn SeriHHHEE eaEv nie | Lf<br>AIT; ff i I ai<br>[| i: 1 AUN 2 3 inip 4 ttiemnieecythiR 5 cantlRe 6 a < iCATPTEE f i: nM 1 TAHT IT 2 3 4 aecnr 5 ti 6<br>ri[K/W]: 7.6E-3 0.190913 0.291478 0.14581 0.012836 1.9E-3 ri[K/W]: 0.010727 0.226517 0.343999 0.15413 0.013783 2.0E-3<br>/ τ i[s]: 1.5E-5 3.4E-4 2.8E-3 0.013837 0.211296 3.232888 τ i[s]: 1.6E-5 3.5E-4 2.7E-3 0.014019 0.208472 3.051577<br>: 0.001 aHATH oone at = a 0.001 {Le roo oro<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p t p ,» PULS E WIDTH [s]<br>Figure 17. IGBT [transien] a t thermal impedance Figure 18. mal impedance as a<br>( D = t p/T) Diodeion elisaofp neaine tien<br>( D = t p/T)<br>160 3.0<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>Tvj = 150°C, IF = 40A Tvj = 150°C, IF = 40A<br>140 —<br>2.5<br>— ee<br>= 120<br>— ne<br>pS ET 7c 2.0 a a n 7<br>100<br>><br>><br>z P p phOLeepls aa<br>i. 80 | : 1.5<br>: oO<br> it<br>(TSS 60 uw<br>1.0 naanre<br>><br>20: 40 ae:<br>0.5<br>20 T[_<br>nana Z<br>0 - S| ft 0.0<br>400 500 600 700 800 900 1000 400 500 600 700 800 900 1000<br>di F /dt DIODE CURR ENT SLOPE[Alus] di F /dt , DIODE CURRENT [SLOPE] [A/us |<br>Figure 19. time as a functioion Figure 20. covery charge as a<br>of aiode' | currentreverse ‘slope s Typicalfunction ofo diode current slope<br>( V R=400V) ( V R=400V)<br>c)th(j- c)th(j-<br>Z Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
11
Datasheet
2018-04-04
IKB40N65ES5
th
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**----- Start of picture text -----**<br>
40 ee | 0 |<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>a Tvj = 150°C, IF = 40A _ Tvj = 150°C, IF = 40A<br>35<br>o r = a -300 a<br>a<br>30<br>5 < mn<br>inw77 re) -600<br>O 25 uw<br>:a Ty| §a -900 IN \<br>20<br>9ow ax -1200<br>:2 15 EZeanae in: :‘ ~<br>g i -1500 ef | | Cr<br>10<br>ow ra) \<br>-1800<br>5<br>0 -2100<br>400 500 600 700 800 900 1000 400 500 600 700 800 900 1000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 21.
Figure 22.
( _V_ R=400V)
( _V_ R=400V)
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120 2.50<br>Tvj = 25°C / IF = 20A<br>Tvj = 150°C / IF = 40A<br>/ 2.25 IF = 80A<br>100<br>2.00<br>80<br>=a i "|Ww 1.75 peeps<br>: g<br>I<br>D e)<br>w5Q 60 : :0 1.50 P| | tt<br>a$ g<br>wr (ag= 1.25<br>40<br>1.00<br>20<br>0.75<br>Y<br>=a4<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
12
Datasheet
2018-04-04
IKB40N65ES5
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## High�speed�switching�series�5[th] �generation
## **Package Drawing PG-TO263-3**
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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
V�2.1 2018-04-04
Datasheet
IKB40N65ES5
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## High�speed�switching�series�5[th] �generation
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
V�2.1 2018-04-04
Datasheet
IKB40N65ES5
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## High�speed�switching�series�5[th] �generation
## **Revision�History**
IKB40N65ES5
## **Revision:�2018-04-04,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2018-04-04|Final data sheet|
15
V�2.1 2018-04-04
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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