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IKB40N65EF5ATMA1
IGBT, 74 A, 1.6 V, 250 W, 650 V, TO-263 (D2PAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:74A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263; No. of Pins:
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 250W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 74A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.51 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IKB40N65EF5
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**----- Start of picture text -----**<br>
TRENCHSTOP [TM]<br>**----- End of picture text -----**<br>
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Features and Benefits: C<br>High speed F5 technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>* 650V breakdown voltage<br>G<br>«Low Q G E<br>¢ IGBT copacked with full rated current RAPID 1 fast antiparallel<br>diode<br>* Maximum junction temperature 175°C C<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models: @)<br>http://www.infineon.com/igbt/ o, “thy;<br>£6. “MWe<br>7026 On<br>Potential Applications: K9<br>« Energy Generation fe, /- rt<br>- Solar String Inverter f a<br>- Solar Micro Inverter Piset<br>G<br>¢ Industrial Power Supplies s<br>- Industrial SMPS<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKB40N65EF5|650V|40A|1.6V|175°C|K40EEF5|PG-TO263-3|
Datasheet www.infineon.com
2018-04-04
IKB40N65EF5
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## High�speed�switching�series�5[th] �generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
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## High�speed�switching�series�5[th] �generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||74.0<br>46.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||160.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||160.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax1)<br>_T_c=25°C<br>_T_c=100°C|_I_F||40.0<br>40.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||160.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||250.0<br>125.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.60|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.75|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) value limited by bondwire
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## High�speed�switching�series�5[th] �generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.42<br>1.39|1.70<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>2000|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|50.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2500|-|pF|
|Output capacitance|_C_oes||-|71|-||
|Reverse transfer capacitance|_C_res||-|9|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|95.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|22|-|ns|
|Rise time|_t_r||-|35|-|ns|
|Turn-off delaytime|_t_d(off)||-|160|-|ns|
|Fall time|_t_f||-|39|-|ns|
|Turn-on energy|_E_on||-|1.00|-|mJ|
|Turn-off energy|_E_off||-|0.45|-|mJ|
|Total switchingenergy|_E_ts||-|1.45|-|mJ|
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## High�speed�switching�series�5[th] �generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|17|-|ns|
|Turn-off delaytime|_t_d(off)||-|160|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.42|-|mJ|
|Turn-off energy|_E_off||-|0.10|-|mJ|
|Total switchingenergy|_E_ts||-|0.52|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=1400A/µs|-|83|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.93|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|14.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-700|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1100A/µs|-|63|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.67|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|16.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-950|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|36|-|ns|
|Turn-off delaytime|_t_d(off)||-|175|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|1.40|-|mJ|
|Turn-off energy|_E_off||-|0.47|-|mJ|
|Total switchingenergy|_E_ts||-|1.87|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|185|-|ns|
|Fall time|_t_f||-|14|-|ns|
|Turn-on energy|_E_on||-|0.65|-|mJ|
|Turn-off energy|_E_off||-|0.12|-|mJ|
|Total switchingenergy|_E_ts||-|0.77|-|mJ|
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## High�speed�switching�series�5[th] �generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=1400A/µs|-|128|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.85|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|26.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-580|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1400A/µs|-|95|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.60|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|23.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-690|-|A/µs|
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250 80<br>225 NR<br>70<br>200<br>PN EE 60 NEE<br>175<br>ff} \fe NN<br>50<br>150<br>PP ON \<br>125 40<br>100<br>PEP ENS<br>30<br>75<br>BING PN<br>20<br>50<br>Hae AS EN<br>10<br>25<br>H=EFEN) EPEPPA<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>120 120<br>VGE=20V VGE=20V<br>/<br>18V 18V<br>100 15V 100 15V<br>12V 12V<br>10V 10V ap<br>80 80<br>8V 8V<br>7V 7V<br>60 60<br>6V 6V<br>5V 5V<br>| WS 40 40 |<br>a Cn) Ce<br>20 20<br>puF FANX<br>0 0<br>0 1 2 3 4 5 6 0 1 2 3 4 5 6<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical output characteristic<br>( T vj=25°C) ( T vj=150°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Datasheet
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120 2.50<br>Tj=25°C IC=10A<br>Tj=150°C 2.25 IC=20A<br>IC=40A<br>100<br>aa ie)z: Bf 2.00 —_—<br>— = ——<br>1.75<br>2) | | f |§ ( oe<br>80<br>im <x<br>5 BE<br>1.50<br>oe5!ep)i<br>3<br>a 60 BRRin EeBp ne 1.25<br>Sa<br>8 1.00<br>: 40 ss<br>Bf<br>0.75<br>. _<br>(e)<br>on<br>0.50<br>20<br>0.25<br>/ / Pt | tT ft<br>0 0.00<br>oA pt; | tt<br>0 2 4 6 8 10 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage as<br>( V CE=20V) a function of junction temperature<br>( V GE=15V)<br>1000 a a 1000 a SS SS ES ES<br>| 1 td(off) a a ee ee ee | td(off) Ee ee<br>I tf p o | tf ee<br>td(on) td(on)<br>tr tr<br>F | p FE be ee ee ee<br>po | p ||o |Pf a|deeeee<br>ee ee a<br>2 a g [LE<br>— 100 er cs 100 a a ee es es<br>ip) a <n Sa esesee<br>uw aa aee ca ip) aa eeaee ee ee ee ee<br>= a es ee ee ee = a a i ee ee<br>- a a ee a ee a ee<br>Q eeee ee ee ee a ees cee ee<br>so a a cee ae<br>E mast o7 E oe<br>= Po = °<br>2) 10 a ee 2) 10 a<br>- a es - a ee<br>po<br>aa<br>aa ee se aeeee ee<br>a Deee<br>a Pf ft | hc] |<br>1 1<br>0 20 40 60 80 100 120 5 10 15 20 25 30 35 40 45<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of gate<br>collector current resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=15 Ω , Dynamic test circuit in V GE =15/0V, I C =40A, Dynamic test circuit in<br>Figure E) Figure E)<br>I C<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br>
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1000 aa 5.0<br>H td(off) typ.<br>i a a I— |<br>I tf a ee ee ee eee _<br>I td(on) a eeee 4.5<br>tr<br><x<br>4.0<br>Es 5<br>100<br>7 ff ||] |e PR<br>ip) a _ 3.5<br>im po (e) ~<br>a oO<br>= a NN<br>- ee ee Wy<br>3.0<br>OQ pres seeFaes Pir rrmem aaeasrsesspeceseeereaptesssesemerseetiteer yO _ S<br><=ee ee ee a a - - NN<br>ee ee:<br>= La 2.5<br>10<br>——————7 poaaaa Ww eeee<br>aa ee se x 2.0<br>eseo)<br>1.5<br>fs<br>1 1.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.4mA)<br>I C =40A, R G=15 , Dynamic test circuit in<br>Figure E)<br>10 4.0<br>Eoff Eoff<br>9 Eon 4 Eon<br>Ets vA 3.5 Ets<br>7<br>/<br>a 8 a<br>3.0<br>Ww 7 Ww 7"<br>io) v2 io) a<br>icp) 4 icp) rae<br>2.5<br>aa 6 a wre<br>5 2.0<br>a / : 7 a a of -—T _—_<br>Oox=Z 4 y7 / 7 7 jr OoZI 1.5 --* = -<br>O re oO -<br>E= 3<br>i<br>1.0<br>2 OG _<br>aa<br>vO {op 0.5<br>1 7 A” =.<br>aa<br>a<br>0 0.0<br>0 20 40 60 80 100 120 5 10 15 20 25 30 35 40 45<br>I C ,COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=15 Ω , Dynamic test circuit in V GE =15/0V, I C =40A, Dynamic test circuit in<br>Figure E) Figure E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>
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2.50 3.0<br>Eoff Eoff<br>2.25 Eon Eon<br>Ets Ets<br>2.5<br>7 2.00 - 7 °<br>(ep) oo (dp) ?<br>Lu 1.75 = Lu YY<br>io) io) 2.0 a<br>Sg 1.50 g o 7<br>> -— > rae 7<br>fv -— i Pa “ 7<br>Ww 1.25 Ww 1.5 3<br>2 1.00 f== 2 “a<br>1.0<br>E 0.75<br>=0) = “|<br>. 0) y<br>0.50 OT EE ee OOo Oe >—«qqt Pa<br>0.5<br>0.25<br>PT tT yt tt Lt<br>0.00 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =40A, R G=15 , Dynamic test circuit in I C =40A, R G=15 , Dynamic test circuit in<br>Figure E) Figure E)<br>16 1E+4<br>130V Cies<br>520V / . t | Coes a ee ee ee ee<br>14 | Cres p o<br>12 1000<br>= {_<br>oO —_ a es<br><x LL Ls<br>a 10 / 2 SS ee<br>9° / |<br>a a<br>bu 8 < 100 a a<br>== Sf— / 9 eeae eo<br>ai o a<br>Ww: 6 f\ | a3) a eeee<br>* 4 fi | | | | 10 ih eee<br>a es ss ee<br>po<br>2 a es<br>0 1<br>0 20 40 60 80 100 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>( V GE =0V, f=1MHZz)<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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1 a 1 A<br>= PTSTPT eeeer TT T T = a el<br>ag =A<br>D=0.5 D=0.5<br>w LL TNNT TIeg le LE<br>0.2 0.2<br>2 OF II el<br>a aa Zl 0.1 ill 2 Pe A 0.1 ll<br>7) 0.1 Pe 0.05 Hetil] §= oD 0.1 eae) 0.05 41<br>Bo eeCe So Teea<br>7 8 A 0.02 1a pf} 0.02 tr |<br>=z= OtPA el el 0.01single pulse WlWE TTLM = eoee) All 0.01single pulse 11llll<br>= Y iu - /<br>i fe atte ame an aia ea<br>Z7<br>eT ll COT LU<br>a 0.01 0.01<br>Zz a)LT000 aol Rp nt Zza SA T Ro il<br>s STA6 | ~~ I TIll s YA0 | ilitl<br>F | I} oe A | | |<br>: PATUIIMEe ee i: 1 ee 2 eee 3 4 | a i: 1 2 a 3 4 on. ae 5 olor 6 ceeel |<br>EUAN ri[K/W]: TMM 0.082455 VAT 0.144197 0.215177 CUTIE 0.158171 1 Ce ri[K/W]: 0.010727 0.226517 0.343999 0.15413 aeueL 0.013783 eel! 2.0E-3<br>τ i[s]: 7.3E-5 7.0E-4 0.012355 0.080209 τ i[s]: 1.6E-5 3.5E-4 2.7E-3 0.014019 0.208472 3.051577<br>0.001 f el aa | 0.001 |<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 17. IGBT transient thermal resistance Figure 18. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>( D = t p/T)<br>160 2.50 Ld<br>Tj=25°C, IF = 40A<br>. N\ 2.25 E Tj=150°C, I O F = 40A }<br>140<br>TTjj=25°C, I=150°C, IF = 40AF = 40A ro) 2.00<br>120 e IN Jeg E E<br>Wwf pgx 1.75 || pear<br>Ne<br>100<br>1.50<br>: — BP<br>80 1.25<br>or Ww<br>Lu or 1.00<br>60<br>pL dL | {ft |<br>>" Ww 0.75 mn<br>40<br>0.50<br>a oe<br>20<br>0.25<br>0 0.00<br>500 700 900 1100 1300 1500 1700 500 700 900 1100 1300 1500 1700<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>c)th(j- c)th(j-<br>Z Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19. Typical of diode ( _V_ R=400V)
Figure 20.
( _V_ R=400V)
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35 Ld -400<br>Tj=25°C, IF = 40A<br>Tj=150°C, IF = 40A<br>y ~“N<br>30<br>—_ -600 Lb, —_ >~<br>z / = — x<br>E 3 N<br>25<br>na / _ -800 aN<br>=): 20 ) {o) Tj=25°C, I | F = 40A \<br>Tj=150°C, IF = 40A<br>-— £ 1000<br>oO 15 BR=aee mo \<br>i —- |__ _—_| s<br>1200<br>org 10 | aan aS):<br>i<br>°<br>-1400<br>aaa<br>5<br>0 -1600<br>500 700 900 1100 1300 1500 1700 500 700 900 1100 1300 1500 1700<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>80 3.0<br>Tj=25°C IF=20A<br>Tj=150°C IF=40A<br>70 IF=80A<br>2.5<br>60<br>= Ww 2.0<br>50<br>if y<br>rs):Q 40 | y|gt :> 1.5<br>: a<br>a 30 s<br>1.0<br>20<br>0.5<br>10<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>/dt<br>rr<br>I rr dI<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
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## High�speed�switching�series�5[th] �generation
## **Package Drawing PG-TO263-3**
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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
V�2.1 2018-04-04
Datasheet
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## High�speed�switching�series�5[th] �generation
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## High�speed�switching�series�5[th] �generation
## **Revision�History**
IKB40N65EF5
## **Revision:�2018-04-04,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2018-04-04|Final data sheet|
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## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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