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IKB30N65ES5ATMA1
IGBT, 62 A, 1.35 V, 188 W, 650 V, TO-263 (D2PAK), 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 188W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 62A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.03 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** ## **TRENCHSTOP[™] 5 high speed soft switching IGBT co-packed with full current rated RAPID 1 fast and soft antiparallel diode** ## **Features** - VCE = 650 V - IC = 30 A - High speed smooth switching device for hard & soft switching - Very low _V_ CEsat, 1.35 V at nominal current - 650 V breakdown voltage - Low gate charge QG - IGBT co-packed with full rated current RAPID 1 fast antiparallel diode - Maximum junction temperature Tvjmax = 175°C **==> picture [83 x 110] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>**----- End of picture text -----**<br> - Pb-free lead plating; RoHS compliant - Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ ## **Potential applications** - Solar string inverter - Solar micro inverter - Industrial SMPS - Industrial UPS - Welding - Energy storage - Charger ## **Product validation** - Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 ## **Description** C G E **Type Package Marking** IKB30N65ES5 PG-TO263-3 K30EES5 ~~>~~ Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.10 2023-01-17 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6| |**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9| |**5**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15| |**6**|**Testing conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18| Datasheet Revision 1.10 2023-01-17 2 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||||| |---|---|---|---|---|---|---| |**Table 1**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Internal emitter<br>inductance measured 5<br>mm (0.197 in.) from case|_L_E|||7||nH| |Storage temperature|_T_stg||-55||150|°C| |Soldering temperature|_T_sold|reflow soldering (MSL1 according to JEDEC<br>J-STA-020)|||260|°C| |Thermal resistance,<br>min.footprint junction-<br>ambient|_R_th(j-a)||||65|K/W| |Thermal resistance, 6 cm2<br>Cu on PCB junction to<br>ambient|_R_th(j-a)||||40|K/W| |IGBT thermal resistance,<br>junction-case|_R_th(j-c)||||0.8|K/W| |Diode thermal resistance,<br>junction-case|_R_th(j-c)||||1|K/W| ## **2 IGBT** |**2**<br>**IGBT**|**2**<br>**IGBT**|**2**<br>**IGBT**|||| |---|---|---|---|---|---| |**Table 2**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CE|_T_vj≥ 25 °C||650|V| |DC collector current,<br>limited by Tvjmax|_I_C||_T_c= 25 °C|62|A| ||||_T_c= 100 °C|39.5|| |Pulsed collector current, tp<br>limited by Tvjmax|_I_Cpulse|||120|A| |Turn-of safe operating<br>area||_V_CE≤ 650 V,_t_p= 1 µs,_T_vj≤|175 °C|120|A| |Gate-emitter voltage|_V_GE|||±20|V| |Transient gate-emitter<br>voltage|_V_GE|_t_p≤ 10 µs,_D_< 0.01||±30|V| |Power dissipation|_P_tot||_T_c= 25 °C|188|W| ||||_T_c= 100 °C|94|| Datasheet Revision 1.10 2023-01-17 3 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT** |**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>breakdown voltage|_V_BRCES|_I_C= 0.2 mA,_V_GE= 0 V||650|||V| |Collector-emitter<br>saturation voltage|_V_CEsat|_I_C= 30 A,_V_GE= 15 V|_T_vj= 25 °C||1.35|1.7|V| ||||_T_vj= 125 °C||1.5||| ||||_T_vj= 175 °C||1.6||| |Gate-emitter threshold<br>voltage|_V_GEth|_I_C= 0.3 mA, VCE= VGE||3.2|4|4.8|V| |Zero gate-voltage collector<br>current|_I_CES|_V_CE= 650 V,_V_GE= 0 V|_T_vj= 25 °C|||50|µA| ||||_T_vj= 175 °C||1400||| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V||||100|nA| |Transconductance|_g_fs|_I_C= 30 A,_V_CE= 20 V|||42||S| |Input capacitance|_C_ies|_V_CE= 25 V,_V_GE= 0 V,_f_= 1000 kHz|||1800||pF| |Output capacitance|_C_oes|_V_CE= 25 V,_V_GE= 0 V,_f_= 1000 kHz|||55||pF| |Reverse transfer<br>capacitance|_C_res|_V_CE= 25 V,_V_GE= 0 V,_f_= 1000 kHz|||7||pF| |Gate charge|_Q_G|_I_C= 30 A,_V_CC= 520 V,_V_GE|= 15 V||70||nC| |Turn-on delay time|_t_d(on)|_V_CC= 400 V,_V_GE= 0/15 V,<br>_R_G(on)= 13 Ω,<br>_R_G(of)= 13 Ω|_T_vj= 25 °C,<br>_I_C= 30 A||17||ns| ||||_T_vj= 25 °C,<br>_I_C= 15 A||16||| ||||_T_vj= 150 °C,<br>_I_C= 30 A||17||| ||||_T_vj= 150 °C,<br>_I_C= 15 A||16||| |Rise time (inductive load)|_t_r|_V_CC= 400 V,_V_GE= 0/15 V,<br>_R_G(on)= 13 Ω,<br>_R_G(of)= 13 Ω|_T_vj= 25 °C,<br>_I_C= 30 A||12||ns| ||||_T_vj= 25 °C,<br>_I_C= 15 A||6||| ||||_T_vj= 150 °C,<br>_I_C= 30 A||13||| ||||_T_vj= 150 °C,<br>_I_C= 15 A||7||| ## **(table continues...)** Datasheet Revision 1.10 2023-01-17 4 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT** ## **Table 3 (continued) Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Turn-of delay time|_t_d(of)|_V_CC= 400 V,_V_GE= 0/15 V,<br>_R_G(on)= 13 Ω,<br>_R_G(of)= 13 Ω|_T_vj= 25 °C,<br>_I_C= 30 A||124||ns| ||||_T_vj= 25 °C,<br>_I_C= 15 A||133||| ||||_T_vj= 150 °C,<br>_I_C= 30 A||149||| ||||_T_vj= 150 °C,<br>_I_C= 15 A||179||| |Fall time (inductive load)|_t_f|_V_CC= 400 V,_V_GE= 0/15 V,<br>_R_G(on)= 13 Ω,<br>_R_G(of)= 13 Ω|_T_vj= 25 °C,<br>_I_C= 30 A||30||ns| ||||_T_vj= 25 °C,<br>_I_C= 15 A||33||| ||||_T_vj= 150 °C,<br>_I_C= 30 A||55||| ||||_T_vj= 150 °C,<br>_I_C= 15 A||54||| |Turn-on energy|_E_on|_V_CC= 400 V,_V_GE= 0/15 V,<br>_R_G(on)= 13 Ω,<br>_R_G(of)= 13 Ω|_T_vj= 25 °C,<br>_I_C= 30 A||0.56||mJ| ||||_T_vj= 25 °C,<br>_I_C= 15 A||0.26||| ||||_T_vj= 150 °C,<br>_I_C= 30 A||0.77||| ||||_T_vj= 150 °C,<br>_I_C= 15 A||0.41||| |Turn-of energy|_E_of|_V_CC= 400 V,_V_GE= 0/15 V,<br>_R_G(on)= 13 Ω,<br>_R_G(of)= 13 Ω|_T_vj= 25 °C,<br>_I_C= 30 A||0.32||mJ| ||||_T_vj= 25 °C,<br>_I_C= 15 A||0.17||| ||||_T_vj= 150 °C,<br>_I_C= 30 A||0.56||| ||||_T_vj= 150 °C,<br>_I_C= 15 A||0.31||| **(table continues...)** Datasheet Revision 1.10 2023-01-17 5 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** |**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Total switching energy|_E_ts|_V_CC= 400 V,_V_GE= 0/15 V,<br>_R_G(on)= 13 Ω,<br>_R_G(of)= 13 Ω|_T_vj= 25 °C,<br>_I_C= 30 A||0.88||mJ| ||||_T_vj= 25 °C,<br>_I_C= 15 A||0.43||| ||||_T_vj= 150 °C,<br>_I_C= 30 A||1.33||| ||||_T_vj= 150 °C,<br>_I_C= 15 A||0.72||| |Operating junction<br>temperature|_T_vj|||-40||175|°C| |**3**<br>**Diode**|**3**<br>**Diode**|**3**<br>**Diode**|||||| |---|---|---|---|---|---|---|---| |**Table 4**<br>**Maximum rated values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM|_T_vj≥ 25 °C||650|||V| |Diode forward current,<br>limited by Tvjmax|_I_F|limited by bondwire|_T_c= 25 °C|40|||A| ||||_T_c= 100 °C|39.5|||| |Diode pulsed current, tp<br>limited by Tvjmax|_I_Fpulse|||120|||A| ||||||||| |**Table 5**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Diode forward voltage|_V_F|_I_F= 30 A|_T_vj= 25 °C||1.45|1.7|V| ||||_T_vj= 125 °C||1.42||| ||||_T_vj= 175 °C||1.39||| ## **(table continues...)** Datasheet Revision 1.10 2023-01-17 6 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** ## **Table 5 (continued) Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Diode reverse recovery<br>time|_t_rr|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1200 A/µs||75||ns| ||||_T_vj= 25 °C,<br>_I_F= 15 A,<br>_-di_F_/dt_= 1900 A/µs||52||| ||||_T_vj= 150 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1200 A/µs||110||| ||||_T_vj= 150 °C,<br>_I_F= 15 A,<br>_-di_F_/dt_= 1900 A/µs||78||| |Diode reverse recovery<br>charge|_Q_rr|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1200 A/µs||0.83||µC| ||||_T_vj= 25 °C,<br>_I_F= 15 A,<br>_-di_F_/dt_= 1900 A/µs||0.6||| ||||_T_vj= 150 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1200 A/µs||1.75||| ||||_T_vj= 150 °C,<br>_I_F= 15 A,<br>_-di_F_/dt_= 1900 A/µs||1.25||| |Diode peak reverse<br>recovery current|_I_rrm|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1200 A/µs||18||A| ||||_T_vj= 25 °C,<br>_I_F= 15 A,<br>_-di_F_/dt_= 1900 A/µs||18.5||| ||||_T_vj= 150 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1200 A/µs||26.5||| ||||_T_vj= 150 °C,<br>_I_F= 15 A,<br>_-di_F_/dt_= 1900 A/µs||26.2||| ## **(table continues...)** Datasheet Revision 1.10 2023-01-17 7 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** ## **(continued) Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 5**<br>**(continued) Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Diode peak rate of fall of<br>reverse recovery current|_di_rr_/dt_|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1200 A/µs||900||A/µs| ||||_T_vj= 25 °C,<br>_I_F= 15 A,<br>_-di_F_/dt_= 1900 A/µs||1320||| ||||_T_vj= 150 °C,<br>_I_F= 30 A,<br>_-di_F_/dt_= 1200 A/µs||1000||| ||||_T_vj= 150 °C,<br>_I_F= 15 A,<br>_-di_F_/dt_= 1900 A/µs||1200||| |Operating junction<br>temperature|_T_vj|||-40||175|°C| _Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet._ _Electrical Characteristic at T_ vj _= 25°C, unless otherwise specified._ _Dynamic test circuit, parasitic inductance L_ σ _= 30 nH, parasitic capacitor C_ σ _= 30 pF from Fig. E. Energy losses include “tail” and diode reverse recovery._ Datasheet Revision 1.10 2023-01-17 8 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **4 Characteristics diagrams** **Power dissipation as a function of heatsink Collector current as a function of case temperature temperature** IC = f(Tc) Ptot = f(Tc)tot = f(Tc) = f(Tc)c)) Tvj ≤ 175 °C, VGE ≥ 15 V Ptot = f(Tc)tot = f(Tc) = f(Tc)c)) T ≤ 175 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 200 70<br>180<br>60<br>160<br>50<br>140<br>120<br>40<br>100<br>30<br>80<br>60<br>20<br>40<br>10<br>20<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>Typical output characteristic Typical output characteristic<br>IC = f(VCE) IC = f(VCE)<br>T = 25 °C T = 150 °C<br>vj vj<br>90 90<br>80 80<br>70 70<br>60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2023-01-17 9 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical transfer characteristic** IC = f(VGE) VCE = 20 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>2 3 4 5 6 7 8 9 10<br>**----- End of picture text -----**<br> **Gate-emitter threshold voltage as a function of junction temperature** VGEth = f(Tvj) IC = 0.3 mA **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 6<br>5<br>4<br>3<br>2<br>1<br>0<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br> ## **Typical collector-emitter saturation voltage as a function of junction temperature** VCEsat = f(Tvj) VGE = 15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of collector current** t = f(IC) VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 13 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0 10 20 30 40 50 60 70 80 90<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2023-01-17 10 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching times as a function of gate resistor** t = f(RG) IC = 30 A, VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V ## **Typical switching times as a function of junction temperature** t = f(Tvj) IC = 30 A, VCC = 400 V, VGE = 0/15 V, RG = 13 Ω **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0 10 20 30 40 50 60 70 80 90<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of collector current** E = f(IC) VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 13 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of gate resistor** E = f(RG) IC = 30 A, VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0 2.5<br>4.5<br>4.0 2.0<br>3.5<br>3.0 1.5<br>2.5<br>2.0 1.0<br>1.5<br>1.0 0.5<br>0.5<br>0.0 0.0<br>0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 90<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2023-01-17 11 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching energy losses as a function of junction temperature** E = f(Tvj) IC = 30 A, VCC = 400 V, VGE = 0/15 V, RG = 13 Ω **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 2.00<br>1.75<br>1.50<br>1.25<br>1.00<br>0.75<br>0.50<br>0.25<br>0.00<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical gate charge** VGE = f(QG) IC = 30 A ## **Typical switching energy losses as a function of collector emitter voltage** E = f(VCE) IC = 30 A, Tvj = 150 °C, VGE = 0/15 V, RG = 13 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>200 250 300 350 400 450 500<br>**----- End of picture text -----**<br> ## **Typical capacitance as a function of collector-emitter voltage** C = f(VCE) f = 1000 kHz, VGE = 0 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50 60 70<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>1<br>0 5 10 15 20 25 30<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2023-01-17 12 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **IGBT transient thermal impedance as a function of pulse width** ## **Diode transient thermal impedance as a function of pulse width** **==> picture [540 x 598] intentionally omitted <==** **----- Start of picture text -----**<br> Zth(j-c) = f(tp)th(j-c) = f(tp) = f(tp)p)) Zth(j-c) = f(tp)th(j-c) = f(tp) = f(tp)p))<br>D = tp/Tp/T/T D = tp/Tp/T/T<br>1<br>1<br>0.1<br>0.1<br>0.01<br>0.01<br>0.001<br>0.001<br>0.0001 0.0001<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1 1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>Typical diode forward current as a function of forward Typical diode forward voltage as a function of<br>voltage junction temperature<br>IF = f(VF)F = f(VF) = f(VF)F)) VF = f(Tvj)F = f(Tvj) = f(Tvj)vj))<br>90 2.50<br>80 2.25<br>70<br>2.00<br>60<br>1.75<br>50<br>1.50<br>40<br>1.25<br>30<br>1.00<br>20<br>0.75<br>10<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> **==> picture [540 x 598] intentionally omitted <==** **----- Start of picture text -----**<br> Zth(j-c) = f(tp)th(j-c) = f(tp) = f(tp)p)) Zth(j-c) = f(tp)th(j-c) = f(tp) = f(tp)p))<br>D = tp/Tp/T/T D = tp/Tp/T/T<br>1<br>1<br>0.1<br>0.1<br>0.01<br>0.01<br>0.001<br>0.001<br>0.0001 0.0001<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1 1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>Typical diode forward current as a function of forward Typical diode forward voltage as a function of<br>voltage junction temperature<br>IF = f(VF)F = f(VF) = f(VF)F)) VF = f(Tvj)F = f(Tvj) = f(Tvj)vj))<br>90 2.50<br>80 2.25<br>70<br>2.00<br>60<br>1.75<br>50<br>1.50<br>40<br>1.25<br>30<br>1.00<br>20<br>0.75<br>10<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2023-01-17 13 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **==> picture [540 x 646] intentionally omitted <==** **----- Start of picture text -----**<br> Typical reverse recovery time as a function of diode Typical reverse recovery charge as a function of diode<br>current slope current slope<br>trr = f(diF/dt) Qrr = f(diF/dt)<br>VR = 400 V, IF = 30 A VR = 400 V, IF = 30 A<br>200 2.25<br>175 2.00<br>150 1.75<br>125 1.50<br>100 1.25<br>75 1.00<br>50 0.75<br>25 0.50<br>0 0.25<br>600 800 1000 1200 1400 1600 1800 2000 600 800 1000 1200 1400 1600 1800 2000<br>Typical reverse recovery current as a function of diode Typical diode peak rate of fall of reverse recovery<br>current slope current as a function of diode current slope<br>Irrm = f(diF/dt) dirr/dt = f(diF/dt)<br>VR = 400 V, IF = 30 A VR = 400 V, IF = 30 A<br>40 0<br>-200<br>35<br>-400<br>30<br>-600<br>25<br>-800<br>20<br>-1000<br>15<br>-1200<br>10<br>-1400<br>5 -1600<br>0 -1800<br>600 800 1000 1200 1400 1600 1800 2000 600 800 1000 1200 1400 1600 1800 2000<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2023-01-17 14 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **5 Package outlines** **==> picture [105 x 47] intentionally omitted <==** ## **5 Package outlines** **==> picture [410 x 618] intentionally omitted <==** **----- Start of picture text -----**<br> Package Drawing PG-TO263-3<br>MIN MAX MIN MAX<br>4.30 4.57 0.169 0.180<br>0.00 0.25 0.000 0.010<br>0.65 0.85 0.026 0.033<br>0.95 1.15 0.037 0.045 Z8B00003324<br>0.33 0.65 0.013 0.026<br>0<br>1.17 1.40 0.046 0.055<br>8.51 9.45 0.335 0.372<br>7.10 7.90 0.280 0.311<br>9.80 10.31 0.386 0.406<br>0 5 5<br>6.50 8.60 0.256 0.339<br>2.54 0.100<br>7.5mm<br>5.08 0.200<br>2 2<br>14.61 15.88 0.575 0.625<br>2.29 3.00 0.090 0.118<br>0.70 1.60 0.028 0.063<br>1.00 1.78 0.039 0.070<br>16.05 16.25 0.632 0.640<br>9.30 9.50 0.366 0.374<br>4.50 4.70 0.177 0.185 30-08-2007<br>10.70 10.90 0.421 0.429<br>3.65 3.85 0.144 0.152<br>1.25 1.45 0.049 0.057 01<br>**----- End of picture text -----**<br> **Figure 1** Datasheet Revision 1.10 2023-01-17 15 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **6 Testing conditions** ## **6 Testing conditions** **==> picture [502 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>Figure D.<br>10% V GE<br>t<br>I C (t)<br>CC<br>2% I C t<br>V CE (t) Figure E. Dynamic test circuit<br>Parasitic inductance Ls,<br>parasitic capacitor Cs,<br>relief capacitor C ,r<br>t 2 t 4 (only for ZVT switching)<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V C C<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 1.10 2023-01-17 16 **IKB30N65ES5 TRENCHSTOP[™] 5 high speed soft switching IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |V2.1|2018-01-11|Final data sheet| |n/a|2020-11-30|Datasheet migrated to a new system with a new layout and new revision<br>number schema: target or preliminary datasheet = 0.xy; final datasheet =<br>1.xy| |1.10|2023-01-17|Correction of diagram: “Typical switching energy losses as a function of<br>collector emitter voltage”<br>Editorial changes| Datasheet Revision 1.10 2023-01-17 17 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2023-01-17 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2023 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-AAL192-002** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **Warnings** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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