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IKB30N65EH5ATMA1
IGBT, 55 A, 1.65 V, 188 W, 650 V, TO-263 (D2PAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:55A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263; No. of Pins:3
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 188W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 55A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.24 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
IKB30N65EH5
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## TRENCHSTOP[TM]
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Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>* 650V breakdown voltage<br>G<br>«Low Q G E<br>¢ IGBT copacked with full rated current RAPID 1 fast antiparallel<br>diode<br>* Maximum junction temperature 175°C C<br>¢ Pb-free lead plating; ROHS compliant<br>http://www.infineon.com/igbt/ *« Complete product spectrum and PSpice Models: G) y<br>7026 On<br>Potential Applications: K9<br>« Energy Generation fe, /- Tt<br>- Solar String Inverter A f \<br>- Solar Micro Inverter Pe<br>G<br>¢ Industrial Power Supplies f<br>- Industrial SMPS<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKB30N65EH5|650V|30A|1.65V|175°C|K30EEH5|PG-TO263-3|
Datasheet www.infineon.com
2018-01-11
IKB30N65EH5
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## High�speed�switching�series�5[th] �generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
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## High�speed�switching�series�5[th] �generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||55.0<br>35.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||90.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||90.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_F||40.0<br>39.5|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||90.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||188.0<br>94.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.80|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.00|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
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## High�speed�switching�series�5[th] �generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.42<br>1.39|1.70<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.30mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1400|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|39.5|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1800|-|pF|
|Output capacitance|_C_oes||-|55|-||
|Reverse transfer capacitance|_C_res||-|7|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=30.0A,<br>_V_GE=15V|-|70.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=22.0Ω,_R_G(off)=22.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|24|-|ns|
|Rise time|_t_r||-|28|-|ns|
|Turn-off delaytime|_t_d(off)||-|159|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.87|-|mJ|
|Turn-off energy|_E_off||-|0.30|-|mJ|
|Total switchingenergy|_E_ts||-|1.17|-|mJ|
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## High�speed�switching�series�5[th] �generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=22.0Ω,_R_G(off)=22.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|160|-|ns|
|Fall time|_t_f||-|27|-|ns|
|Turn-on energy|_E_on||-|0.35|-|mJ|
|Turn-off energy|_E_off||-|0.09|-|mJ|
|Total switchingenergy|_E_ts||-|0.44|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=850A/µs|-|75|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.70|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|12.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-600|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=900A/µs|-|57|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.50|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|14.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-570|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=22.0Ω,_R_G(off)=22.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|29|-|ns|
|Turn-off delaytime|_t_d(off)||-|180|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|1.16|-|mJ|
|Turn-off energy|_E_off||-|0.37|-|mJ|
|Total switchingenergy|_E_ts||-|1.53|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=22.0Ω,_R_G(off)=22.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|195|-|ns|
|Fall time|_t_f||-|21|-|ns|
|Turn-on energy|_E_on||-|0.57|-|mJ|
|Turn-off energy|_E_off||-|0.15|-|mJ|
|Total switchingenergy|_E_ts||-|0.72|-|mJ|
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## High�speed�switching�series�5[th] �generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=850A/µs|-|110|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|23.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-700|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=850A/µs|-|90|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.30|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|20.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-720|-|A/µs|
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IKB30N65EH5
## th High speed switching series5 generation
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200 60<br>180<br>TEES 50 NO<br>160 Nee<br>140<br>> XPT. EN<br>40<br>120<br>100 30<br>pio Xs \<br>80<br>PEERAGE ECA<br>20<br>60<br>ef LN 8 .<br>40<br>HERS 10<br>SE PETTING<br>20<br>SEEEEN ELETEN<br>0 P| tt} [TEIN] 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>90 90<br>80 80<br>SERPs tt |<br>70 VGE=18V 70 VGE=18V<br>15V 15V<br>Aas ee aee<br>60 60<br>12V 12V<br>10V 10V<br>50 50<br>: Eb2¢ 8V |) /0RnE : ey 8V<br>40 7V 40 7V<br>6V 6V<br>5 i /ieeee 5 iran nee<br>30 30<br>5V 5V<br>20 4V 20 4V<br>Ne YK<br>10 10<br>0 eeeee 0 4 Nee<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=150°C)
Datasheet
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90 LY Tj=25°C /<br>Tj=150°C<br>80<br>Edu)<br>70 P L ETAL<br>60<br>oc<br>50<br>oc<br>o 40 /<br>4<br>Pf A<br>30<br>fo) /<br>~ /<br>20<br>pTLA<br>10 7]VA<br>0 —_— — ma——) A<br>4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=20V)
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ee<br>[ee] [ee] [ee] [ee]<br>ee [ee]<br>td(off)<br>E tf L LE)<br>100<br>| ttd(on)r a ee ee ee ee ee cee<br>1 eSPa<br>s PNTee<br>” PN ee<br>S fF ON et<br>- N _<br>O<br>E 10<br>- ee<br>ee<br>a ee ee ee ee ee ee<br>PF ot ct cE UE<br>Ft | | tt tt<br>1<br>0 10 20 30 40 50 60 70 80 90<br>I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical switching times as a function of<br>collector current<br>(inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, R G=22 Ω , Dynamic test circuit in<br>Figure E)<br>t<br>**----- End of picture text -----**<br>
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2.50 I Lt C=7.5A<br>IC=15A<br>2.25 IC=30A<br>EB<br>z<br>Ooll 2.00 a = 4<br>1.75<br>aw aa<br>= 1.50 =<br>z _i ==<br>O 1.25<br>BH Lp<br>(e) 1.00<br>0.75<br>ae<br>0.50<br>0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>Figure 6. Typical collector-emitter saturation voltage<br>a function of junction temperature<br>( V GE=15V)<br>1000<br>[ |i td(off) a ne ee ee ee ee ee<br>tf<br>ttd(on)r a a i<br>Fb ee<br>ee<br>is 100 Or ee<br>” eT<br>ey<br>- ee ee ee ee ne<br>oO aS<br>EF aa<br>- 10 Ee<br>J<br>a a<br>>] ><br>es ee ee<br>1<br>5 15 25 35 45 55 65<br>R G , GATE RESISTOR [ Ω ]<br>CEsat<br>V<br>t<br>**----- End of picture text -----**<br>
Figure 8. Typical **resistor**
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(inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, I C =30A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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6.0<br>typ.<br>5.5 6 f&yy).<br>.<br>sQ=<br>Q= 5.0<br>=<br>4.5<br>4.0<br>Lu<br>BP TN<br>3.5<br>x -—~_<br>- |<br>kKormyormymy 3.0 -™. SS<br>2.5<br>2.0<br>1.5<br>1.0<br>0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C]<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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.<br>100 = t| ttd(off)f aa ee ee sQ= 5.0<br>1 td(on) a a<br>a SS tr ae es ee 4.5<br>QO { fo e 4.0<br>= TE Lu<br>Bo p ocesstcpees y BP TN<br>© = 3.5<br><= r x -—~_<br>= - |<br>oOE 10 a kKormyormymy 3.0 -™. SS<br>a a ee ee 2.5<br>2.0<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=0/15V, ( I C=0.3mA)<br>I C =30A, R G=22 , Dynamic test circuit in<br>Figure E)<br>7 2.50<br>Eoff Eoff<br>Eon / 2.25 Eon v<br>Ets Ets<br>6 | | / / | a a<br>5 / 5 2.00 3<br>(op) D 5 RA 2) 1.75 Z <<br>o > 4 / Z 7 o> 1.50 “ oa a 2 —<br>O / O “ =<br>3/ 1.25<br>3<br>2// 2 1.00<br>OyO<br>0.75<br>;° 2 / oeyo ee a° 0.50 = an<br>1<br>7 / oa =<br>0.25<br>a SseT<br>0 0.00<br>0 10 20 30 40 50 60 70 80 90 5 15 25 35 45 55 65<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, R G=22 Ω , Dynamic test circuit in V GE =0/15V, I C =30A, Dynamic test circuit in<br>Datasheet Figure E) 9 Figure E) V2.1<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>
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1.8 2.00<br>Eoff Eoff<br>Eon Eon<br>1.6 | Ets eo 1.75 | Ets 7 Yo /7<br>[| aa oo YY<br>or)& 1.4 eo . eae or)= 1.50 Zz 7<br>-<br>2 1.2 _<br>fe) _ 2 1.25 a 4<br>a] ao _— Oa] < <<br>1.0<br>_ 1.00 <<br>a 0.8 y a<br>0.75<br>O 0.6 O 7<br>E E a<br>0.50<br>0.4<br>ee fo<br>0.25<br>0.2<br>0.0 0.00<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=0/15V, (inductive load, T vj =150°C, V GE=0/15V,<br>I C =30A, R G=22 , Dynamic test circuit in I C =30A, R G=22 , Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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16 1E+4<br>130V520V |I CCiesoes aa aee ee ee ee<br>14 L I Cres ee e ee<br>12 1000<br>oO a<br><x —_ a ee<br>FE 10 /, LL2 Eaa eese<br>e // ss Se<br>: Zz _<br>8 100<br>= / a |<br>= /, oO<t e ee<br>Lu o<br>6<br>Lu / a Re<br>: — O py<br>et 4 PALE LL Ld | 10 pt<br>a es ss ee<br>po<br>2 a eeee<br>0 1<br>0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 15. Typical ( _I_ C=30A)
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**----- Start of picture text -----**<br>
Figure 16.<br>( V GE<br>**----- End of picture text -----**<br>
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th
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**----- Start of picture text -----**<br>
1 a YT TTT TT TT TT<br>PT TTT TT TTT errr TT<br>Sti oti aii)exert 1<br>s Fencet<br>7 GE 2 TT TT = 2 EEee<br>D=0.5 D=0.5<br>7 CEN LIL Ait a eA ETF<br>O a=, O A2 |<br>0.2 0.2<br>gSL THI g eycriemnt PMI<br>a THMAAA 0.1 < tt AH 0.1<br>0.1 JAW LL a iW70nNiiomm<br>way ae 0.05 0.1 eee 0.05<br>= 0.02 ae | | Lt 0.02<br>s Eee 0.01 a = Sai eat Sa ae 0.01 a<br>ed STaeet S FAH AER ert rrr<br>ll single pulse CIN Sac aeaL single pulse<br>Bee<br>E wn] BFRee Te<br>allTee F eMeT TN ATT<br>ai 0.01 fi Hy Mi<br>O ACA Lari ai 0.01 i |<br>Z eetrete ,t Et mR | ODZ ocall vA e<br>re o R Tt<br>FE onoOi Ci A -- —[i] |EESTI al ~~]ii<br>AT AIT) chr, co=tire lll<br>- ATiTT TTT [Leese omrerre Nf TTI<br>} A AU i: 1 TTI 2 LUI 3 LA 4 a 5 CAT 6 TTFh FY PACOA i: 1 PCT 2 3 4 5 6<br>ri[K/W]: 9.3E-3 0.242715 0.373613 0.158334 0.014318 1.9E-3 ri[K/W]: 0.014545 0.309949 0.475571 0.182319 0.01682 2.2E-3<br>τ i[s]: 1.6E-5 3.4E-4 2.7E-3 0.014105 0.204769 2.877416 τ i[s]: 1.6E-5 3.4E-4 2.6E-3 0.01432 0.201605 2.700794<br>0.001 f re TT ee 0.001 | a CE<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
> Figure 17. IGBT ( _D_ = _t_ p/T)
Figure 18. Diode function ( _D_ = _t_ p/T)
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150 2.00<br>Tj=25°C, IF = 30A Tj=25°C, IF = 30A<br>140 Tj=150°C, IF = 30A Tj=150°C, IF = 30A<br>1.75<br>130 \ _oO _—<br>A=FLu= 120 > Sy WuEe 1.50<br>- ~sN x= 1.25<br>110<br>ieee~ _ eee<br>100 1.00<br>uwS 90 a L 5ia<br>ie): Lu: 0.75 | | | feL<br>80 \ Lu<br>0.50<br>70<br>| ; 0.25 P| | |<br>60<br>50 0.00<br>500 600 700 800 900 1000 500 600 700 800 900 1000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19.
( _V_ R=400V)
Figure 20.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
30.0 0<br>Tj=25°C, IF = 30A Tj=25°C, IF = 30A<br>27.5 ee Tj=150°C, IF = 30A ee ee -100 ee Tj=150°C, IF = 30A ee<br>25.0<br>ae ee ee -200 ee<br>22.5<br>=) “ re) -300<br>opf 20.0 4 io aN<br>(a 7 ° -400<br>Boos<br>fe) 17.5 ot ©<br>-500<br>ia 15.0 oO \ \<br>n ()<br>ne} ~<br>-600<br>>2 12.5 _— ne}. ~<br>-700<br>10.0 ee eeeeeee<br>7.5 -800<br>5.0 -900<br>500 600 700 800 900 1000 500 600 700 800 900 1000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>dI<br>I rrm<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Figure 21. Typical<br>function<br>( V R=400V)<br>**----- End of picture text -----**<br>
Figure 22.
( _V_ R=400V)
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90 2.0<br>Tj=25°C<br>Tj=150°C<br>80 E Tilly)L Y / / 1.9 ELL fe<br>1.8<br>70 IF=15A<br>IF=30A<br>1.7 IF=60A<br>: 60 | Ww<br>“ EF B 1.6 e<br>5 50 e)<br>: S p<br>1.5<br>Q<br>i<br>40<br>< |: eee$ 1.4 re<br>30<br>oe O 1.3 Pf fff]<br>20<br>1.2<br>| —t | | | |<br>10 PLA)= cfZ| 1.1 eR-——~_<br>0 14% 1.0<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
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## High�speed�switching�series�5[th] �generation
## **Package Drawing PG-TO263-3**
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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
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Datasheet<br>**----- End of picture text -----**<br>
V�2.1 2018-01-11
IKB30N65EH5
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## High�speed�switching�series�5[th] �generation
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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Datasheet
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## High�speed�switching�series�5[th] �generation
## **Revision�History**
IKB30N65EH5
## **Revision:�2018-01-11,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2018-01-11|Final data sheet|
15
V�2.1 2018-01-11
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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