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IKB15N65EH5ATMA1
IGBT, 30 A, 1.65 V, 105 W, 650 V, TO-263 (D2PAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 105W
- Transistor Mounting: Surface Mount
- DC Collector Current: 30A
- Power Dissipation Pd: 105W
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 30A
- Collector Emitter Voltage Max: 650V
- Automotive Qualification Standard: -
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.65V
- Collector Emitter Saturation Voltage Vce(on): 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.974 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
IKB15N65EH5
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## TRENCHSTOP[TM]
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Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>* 650V breakdown voltage<br>G<br>«Low Q G E<br>¢ IGBT copacked with full rated current RAPID 1 fast antiparallel<br>diode<br>* Maximum junction temperature 175°C C<br>¢ Pb-free lead plating; ROHS compliant<br>http://www.infineon.com/igbt/ *« Complete product spectrum and PSpice Models: G) y<br>7026 On<br>Potential Applications: K9<br>« Energy Generation fe, /- Tt<br>- Solar String Inverter A f \<br>- Solar Micro Inverter Pe<br>G<br>¢ Industrial Power Supplies f<br>- Industrial SMPS<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKB15N65EH5|650V|15A|1.65V|175°C|K15EEH5|PG-TO263-3|
Datasheet www.infineon.com
2018-01-11
IKB15N65EH5
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## High�speed�switching�series�5[th] �generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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## High�speed�switching�series�5[th] �generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||30.0<br>18.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||45.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||45.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||32.0<br>21.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||45.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||105.0<br>52.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.40|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.80|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
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## High�speed�switching�series�5[th] �generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.42<br>1.39|1.70<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.15mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1400|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|22.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|930|-|pF|
|Output capacitance|_C_oes||-|24|-||
|Reverse transfer capacitance|_C_res||-|4|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=15.0A,<br>_V_GE=15V|-|38.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns|
|Rise time|_t_r||-|17|-|ns|
|Turn-off delaytime|_t_d(off)||-|145|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|0.40|-|mJ|
|Turn-off energy|_E_off||-|0.08|-|mJ|
|Total switchingenergy|_E_ts||-|0.48|-|mJ|
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## High�speed�switching�series�5[th] �generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|15|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|145|-|ns|
|Fall time|_t_f||-|27|-|ns|
|Turn-on energy|_E_on||-|0.18|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.21|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=600A/µs|-|70|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.50|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-600|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=800A/µs|-|54|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.30|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|11.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-400|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|160|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.53|-|mJ|
|Turn-off energy|_E_off||-|0.10|-|mJ|
|Total switchingenergy|_E_ts||-|0.63|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|14|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|160|-|ns|
|Fall time|_t_f||-|28|-|ns|
|Turn-on energy|_E_on||-|0.27|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.31|-|mJ|
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## High�speed�switching�series�5[th] �generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=550A/µs|-|100|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.92|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-573|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=740A/µs|-|75|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.62|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-550|-|A/µs|
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IKB15N65EH5
## th High speed switching series5 generation
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110 30<br>100<br>SS 25 Nor<br>90<br>SOE N<br>80<br>/ ASEEES PIXE<br>20<br>eT 70 NOE |<br>60<br>PEARSE PN<br>15<br>50<br>PNG<br>40<br>PETE 10<br>Bp 30 oNNT ae] A.<br>20 PEN 5<br>10<br>PoE)TN LEE<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>45 45<br>40 40<br>| ZI pt Ll<br>35 VGE=20V 35 VGE=20V<br>18V 18V<br>30 30<br>12V 12V<br>10V 10V<br>25 25<br>$6246 8V ie 8V an<br>20 7V 20 7V<br>6V 6V<br>15 15<br>ee) 5V 2a eee 5V ee<br>10 4V 10 4V<br>5 5<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=150°C)
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45 2.25<br>Tj=25°C IC=3,8A<br>Tj=150°C IC=7,5A<br>40 a IC=15A<br>T O ee<br>a 2.00 ee<br>35 p o pe<br>eee = oe<br>5 30 1.75 ae<br>i Fe —<br>pL eext eree<br>5 25 / th<br>a = 1.50 ==<br>pt a<br>20<br>Pe ee<br>15 1.25<br>Og 7 aa<br>One 10 oO<br>1.00<br>(7 ee ee ee<br>5<br>7A/ P| | ct ht hf<br>ey a<br>0 0.75<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>( V GE=15V)<br>pms td(off)d(off) Oe 1000 _ td(off)<br>tff tf<br>ttd(on)rtd(on)rd(on)rr I ttd(on)r eeee eeaeee<br>FE FEEREEEE = eee<br>100 T P 4 TT [e] [er]<br>ee eeeeee eeeeeeeeeeee ee 100 ra<br>or PN |} ceed ee ee ZO<br>g- ASCEee2ee2 —FSS — — —<br>- E REESE<br>go |PoE|PoE|| PetePeaU|PeaU|aU|| et|)|) -|g pFe{| {| {| { f{ f [| [| fer<br>10<br>»6 | |ES ES | Doar<br>6 | |ES 5 10 cheeryty | || ||<br>dO ee<br>[[|]] ee<br>|_|} [[+}]] ee<br>PECEEEEEEE EREREEE EEE<br>1 1<br>0 5 10 15 20 25 30 35 40 45 50 10 20 30 40 50 60 70 80 90 100 110 120<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>I C<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br>
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pms td(off)d(off) Oe<br>tff<br>ttd(on)rtd(on)rd(on)rr<br>FE FEEREEEE<br>100 T P 4<br>ee eeeeee eeeeeeeeeeee ee<br>or PN |} ceed ee ee<br>g- ASCEee2ee2<br>go |PoE|PoE|| PetePeaU|PeaU|aU|| et|)|)<br>10<br>»6 | |ES<br>dO<br>[[|]]<br>|_|} [[+}]]<br>PECEEEEEEE<br>1<br>0 5 10 15 20 25 30 35 40 45 50<br>I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical switching times as a function of<br>t<br>**----- End of picture text -----**<br>
Figure 8. Typical **resistor**
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=39 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
_T_ vj =150°C, _V_ CE=400V,
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**----- Start of picture text -----**<br>
V GE =15/0V, I C<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
100 [a t| e ttd(off)f p aA eeo<br>1 td(on) a a<br>a SSS tr ae es ee<br>a<br>a ee<br>=<br>a2 ee<br><==<br>O 10<br>E= aa<br>pop<br>1<br>25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>**----- End of picture text -----**<br>
Figure 9.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _r_ G=39 , Dynamic test circuit in Figure E)
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**----- Start of picture text -----**<br>
6.0<br>typ.<br>5.5<br>Q 5.0<br>=<br>4.5<br>A 4.0<br>Lu<br>ee¢ 3.5<br>-or |<br>uukK= 3.0 ls ~~NN<br>2.5<br>2.0<br>1.5<br>1.0<br>0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C]<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 10.
( _I_ C=0.15mA)
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**----- Start of picture text -----**<br>
2.50 1.2<br>Eoff Eoff<br>2.25 Eon Eon<br>Ets Ets<br>ee L d ;<br>‘ 1.0 7<br>2.00<br>J | ttt le = “<br>op) / 7<br>Ww 1.75 7 (ep) Y<br>ip) 7; op)Ww 0.8 Z. Zz .<br>aa] 1.50 4 _I L oa “|<br>oO / O Uo a<br>ow yj 7 ow Y S<br>1.25 0.6<br>m7 5 Ww 7<br>Zz 7 4 Z 7<br>e)2 1.00 / / e)2 “lyy a<br>LL<br>OE 0.75 /| 7 O 0.4<br>a<br>= 5 =<br>7) ALO 7)<br>0.50<br>0.2<br>7 oo —_ |<br>0.25<br>y ao ane<br>0.00 Ate]_———_| | 0.0 cor<br>0 5 10 15 20 25 30 35 40 45 10 20 30 40 50 60 70 80 90 100 110 120<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=39 Ω , Dynamic test circuit in V GE =15/0V, I C =15A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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0.7 0.8<br>Eoff Eoff “ a<br>Eon Eon<br>Ets aa 0.7 Ets 7<br>0.6<br>7 eer e477 _—7 7vo Za Za<br>_— 7 0.6 ae<br>0.5<br>ikio) - nn _ — —| g” 7“Oevya<br>o _ o Y<br>fo)a_ao fo) 0.5 5<br>& 0.4 ~ & c<br>uw wi 0.4 7<br>Zz Z 7<br>Ww Ww Y 7<br>: 0.3 ef] tl : ; <<br>0.3<br>L<br>0.2<br>0.2<br>0.1<br>0.1<br>0.0 0.0<br>25 50 75 100 125 150 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _R_ G=39 ,Dynamic test circuit Figure E)
Figure 14.
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V GE=15/0V,<br>I C =15A, r G=39 , Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
16 1E+4<br>130V H Cies eT<br>520V Coes<br>14 / / HI Cres aee<br>/ ee ee<br>Ds ee ee<br>s AWA e e<br>S 12 1000 a r e ee ee ee ee<br>uw / a<br>oO~¢ / / / LL— aa es es<br>FE 10 2 [a<br>9 J, W Ce ee<br>bu: 8 J / owi 100 SS | ee| | eefT ee ee<br>==E ff rs)~¢o paPpaNTa a ee<br>Lu NNT<br>6<br>ul -—4 = a ee ee ee<br>: —_ O a a ee<br>*° Da [ e | A<br>4 10 aaa<br>2 aaa sseeeeie ee eeee eeee<br>0 1<br>0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=15A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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th
**==> picture [479 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
1 a Ce SciU 1 eTel ,<br>_= Eeeeeeth A = ot7ee |<br>N4 CO2eee ea | TT2SSTAT<br>aT D=0.5 D=0.5 |<br>9 HHL. 0.2 TT aT HT THA. 0.2 ATTIIH<br>img NeC e as Ae 0.1 til TmgTe mati mi tlWi / Al 0.1 _C<br>=2a 0.1 =Com| Z A7ALL| eeeI) 0.050.02 |LL &= 0.1 DertTe0=A lll 0.050.02 oo|<br><x eet A a See a2 An we<br>S 7 | 0.01 On Tt PT TTA tT TT 0.01 i<br>oe I vt nS I aT Zz 1 a<br>single pulse single pulse<br>r En ea TT oe SCM Caan Se TT<br>F 2 AMD eI iP et et Hill<br>| PUTT | errin Lee UN TM) I TA LM rst ETT LT<br>SGCaerLan 56 Var<br>2 0.01 Ser ry see a 2 0.01 eA et IR; R e<br>o PT ea tT PT i Lat<br>FE IneVC -- Hi}[il oeo Ion 7 A amlil<br>- PIEAT TN chin, carn, Il) - PL III TTTPIT Te shim Costes ill<br>ATTYUM? i: CECT 1 TT 2 Toi 3 EET 4 ool 5 IEPUTA i: COU TT 1 CCT TT 2 ooo 3 4 5 Tool<br>ri[K/W]: 0.050353 0.577446 0.630979 0.121142 0.018932 ri[K/W]: 0.067415 0.782038 0.788573 0.146126 0.022837<br>τ i[s]: 4.7E-5 4.8E-4 3.4E-3 0.022142 0.19328 τ i[s]: 4.2E-5 4.8E-4 3.3E-3 0.022253 0.192244<br>0.001 | | 0.001 LT | |<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
> Figure 17. IGBT ( _D_ = _t_ p/T)
Figure 18. Diode function ( _D_ = _t_ p/T)
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**----- Start of picture text -----**<br>
150 1.2<br>Tj=25°C, IF = 15A Tj=25°C, IF = 15A<br>135 Tj=150°C, IF = 15A Tj=150°C, IF = 15A<br>~ 1.0 _<br>120 |[ i |. =<br>AT! 105 “XN 9 _-<br>a 0.8<br>- ~ a<br>> 90 _—™~_ > O<br>75 0.6<br>Lu9) 60 Lu<br>ee 0.4 [| ttt<br>eto Ee ee<br>45<br>30<br>Baa<br>0.2<br>15<br>0 0.0<br>400 450 500 550 600 650 700 400 450 500 550 600 650 700<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19.
( _V_ R=400V)
## Figure 20.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
25.0 -300<br>Tj=25°C, IF = 15A Tj=25°C, IF = 15A<br>22.5 Tj=150°C, IF = 15A Tj=150°C, IF = 15A<br>-350<br>“ \<br>20.0<br>= PTT ] Poa IN<br>K a -400 N<br>pf 17.5 f<br>ee . \<br>-450<br>x ee |<br>15.0<br>ee z<br>(o}<br>mT2 va ee L ee ee<br>fe) 12.5 © -500 \<br>Bolo \<br>10.0<br>phe fs -550<br>7.5<br>ul —_ 3<br>-600<br>5.0<br>-650<br>2.5<br>0.0 -700<br>400 450 500 550 600 650 700 400 450 500 550 600 650 700<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical peak reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>45 2.00<br>Tj=25°C IF=7,5A<br>L Tj=150°C Y f|/ fe IF=15A {ett<br>40 | IF=30A |<br>1.75<br>35<br>30<br>1.50<br>-=) 25 PLE LEE LAL :e) ad ee<br>: | 3 pap<br>° 0<br>e 20 E<br>S/= 1.25<br>:<br>15<br>/ eeee<br>10<br>1.00<br>5<br>PLil yar iy} (ap<br>0 0.75<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>/dt<br>rr<br>dI<br>I rrm<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
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## High�speed�switching�series�5[th] �generation
## **Package Drawing PG-TO263-3**
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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
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**----- Start of picture text -----**<br>
Datasheet<br>**----- End of picture text -----**<br>
V�2.1 2018-01-11
IKB15N65EH5
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## High�speed�switching�series�5[th] �generation
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## High�speed�switching�series�5[th] �generation
## **Revision�History**
IKB15N65EH5
## **Revision:�2018-01-11,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2018-01-11|Final data sheet|
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## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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