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IKA15N65H5XKSA1
IGBT, 15 A, 1.65 V, 33.3 W, 650 V, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:33.3W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 33.3W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 15A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.706 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
**IKA15N65ET6 TRENCHSTOP[™] IGBT6** ## **TRENCHSTOP[™] IGBT6 with soft, fast recovery antiparallel Rapid diode** ## **Features** - VCE = 650 V - IC = 15 A - Very low VCE(sat) 1.5 V (typ.) - Maximum junction temperature Tvjmax = 175°C - Short circuit withstand time 3 µs - Very tight parameter distribution - High ruggedness, temperature stable behavior - Low VCE(sat) and positive temperature coefficient - Low gate charge QG - Pb-free lead plating; RoHS compliant **==> picture [32 x 18] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>C<br>E<br>**----- End of picture text -----**<br> - Very soft, fast recovery antiparallel Rapid diode - Product spectrum and PSpice Models: http://www.infineon.com/igbt/ **Potential applications** • General purpose drives (GPD) 5) Green • Air conditioning Free • Other major home appliances • Other small home appliances **Product validation** ° _ • Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 **Description** C G E **Type Package Marking** IKA15N65ET6 PG-TO220-3 FP K15EET6 ~~ae~~ Datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.10 www.infineon.com 2021-10-18 **IKA15N65ET6 TRENCHSTOP[™] IGBT6** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5| |**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**5**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14| |**6**|**Testing conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17| Datasheet Revision 1.10 2021-10-18 2 **IKA15N65ET6 TRENCHSTOP[™] IGBT6** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||||| |---|---|---|---|---|---|---| |**Table 1**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Isolation test voltage RMS|_V_isol|_f_= +50/+60 Hz,_t_= 1 min|||2500|V| |Internal emitter inductance<br>measured 5 mm (0.197 in)<br>from case|_L_E|||7.0||nH| |Storage temperature|_T_stg||-55||150|°C| |Soldering temperature||wave soldering 1.6mm (0.063in.) from case<br>for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting<br>processes: 3|_M_||||0.5|Nm| |Thermal resistance,<br>junction-ambient|_R_th(j-a)||||65|K/W| |**2**<br>**IGBT**|**2**<br>**IGBT**|**2**<br>**IGBT**|||| |---|---|---|---|---|---| |**Table 2**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CE|_T_vj≥ 25 °C||650|V| |DC collector current, limited<br>by Tvjmax _1)_|_I_C||_T_h= 25 °C|34|A| ||||_T_h= 100 °C|21|| |Pulsed collector current, tp<br>limited by Tvjmax|_I_Cpuls|||57.5|A| |Turn-of safe operating area||_V_CE≤ 650 V,_T_vj≤ 175 °C||57.5|A| |Gate-emitter voltage|_V_GE|||±20|V| |Transient gate-emitter<br>voltage|_V_GE|_t_p≤ 10 µs,_D_< 0.010||±30|V| |Short-circuit withstand time|_t_SC|_V_CC≤ 360 V,_V_GE= 15 V, Allowed number of<br>short circuits < 1000, Time between short<br>circuits ≥ 1.0 s,_T_vj= 150 °C||3|µs| |Power dissipation|_P_tot||_T_h= 25 °C|35.3|W| ||||_T_h= 100 °C|17.6|| |_1)_<br>Limited by maximum junction temperature. Applicable for TO220 standard package.|||||| Datasheet Revision 1.10 2021-10-18 3 **IKA15N65ET6 TRENCHSTOP[™] IGBT6** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT** |**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter breakdown<br>voltage_1)_|_V_BRCES|_I_C= 0.1 mA,_V_GE= 0 V||650|||V| |Collector-emitter saturation<br>voltage|_V_CEsat|_I_C= 11.5 A,_V_GE= 15 V|_T_vj= 25 °C||1.5|1.9|V| ||||_T_vj= 125 °C||1.65||| ||||_T_vj= 150 °C||1.75||| |Gate-emitter threshold<br>voltage|_V_GEth|_I_C= 0.20 mA, VCE= VGE||4.8|5.6|6.4|V| |Zero gate-voltage collector<br>current|_I_CES|_V_GE= 0 V,_V_CE= 650 V|_T_vj= 25 °C|||30|µA| ||||_T_vj= 150 °C||450||| |Gate-emitter leakage current|_I_GES|_V_CE= 0 V,_V_GE= 20 V||||100|nA| |Transconductance|_g_fs|_I_C= 11.5 A,_V_CE= 20 V,_T_vj≥ 25 °C|||11.6||S| |Short-circuit collector<br>current|_I_SC|_V_CC≤ 360 V,_V_GE= 15 V,_t_SC≤ 3 µs, Allowed<br>number of short circuits < 1000 , Time<br>between short circuits ≥ 1.0 s ,_T_vj= 150 °C|||120||A| |Input capacitance|_C_ies|_V_CE= 25 V,_V_GE= 0 V,_f_= 1000 kHz|||1020||pF| |Output capacitance|_C_oes|_V_CE= 25 V,_V_GE= 0 V,_f_= 1000 kHz|||50||pF| |Reverse transfer capacitance|_C_res|_V_CE= 25 V,_V_GE= 0 V,_f_= 1000 kHz|||20||pF| |Gate charge|_Q_G|_I_C= 11.5 A,_V_GE= 15 V|||37||nC| |Turn-on delay time|_t_don|_V_CE= 400 V,_V_GE= 15 V,<br>_R_Gon= 47.0 Ω,<br>_R_Gof= 47.0 Ω,<br>_L_σ= 30 nH,_C_σ= 150 pF|_T_vj= 25 °C,<br>_I_C= 11.5 A||30||ns| ||||_T_vj= 150 °C,<br>_I_C= 11.5 A||27||| |Rise time (inductive load)|_t_r|_V_CE= 400 V,_V_GE= 15 V,<br>_R_Gon= 47.0 Ω,<br>_R_Gof= 47.0 Ω,<br>_L_σ= 30 nH,_C_σ= 150 pF|_T_vj= 25 °C,<br>_I_C= 11.5 A||22||ns| ||||_T_vj= 150 °C,<br>_I_C= 11.5 A||23||| |Turn-of delay time|_t_dof|_V_CE= 400 V,_V_GE= 15 V,<br>_R_Gon= 47.0 Ω,<br>_R_Gof= 47.0 Ω,<br>_L_σ= 30 nH,_C_σ= 150 pF|_T_vj= 25 °C,<br>_I_C= 11.5 A||117||ns| ||||_T_vj= 150 °C,<br>_I_C= 11.5 A||135||| |Fall time (inductive load)|_t_f|_V_CE= 400 V,_V_GE= 15 V,<br>_R_Gon= 47.0 Ω,<br>_R_Gof= 47.0 Ω,<br>_L_σ= 30 nH,_C_σ= 150 pF|_T_vj= 25 °C,<br>_I_C= 11.5 A||42||ns| ||||_T_vj= 150 °C,<br>_I_C= 11.5 A||67||| **(table continues...)** Datasheet Revision 1.10 2021-10-18 4 **IKA15N65ET6 TRENCHSTOP[™] IGBT6** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** |**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-on energy|_E_on|_V_CE= 400 V,_V_GE= 15 V,<br>_R_Gon= 47.0 Ω,<br>_R_Gof= 47.0 Ω,<br>_L_σ= 30 nH,_C_σ= 150 pF|_T_vj= 25 °C,<br>_I_C= 11.5 A||0.23||mJ| ||||_T_vj= 150 °C,<br>_I_C= 11.5 A||0.32||| |Turn-of energy|_E_of|_V_CE= 400 V,_V_GE= 15 V,<br>_R_Gon= 47.0 Ω,<br>_R_Gof= 47.0 Ω,<br>_L_σ= 30 nH,_C_σ= 150 pF|_T_vj= 25 °C,<br>_I_C= 11.5 A||0.11||mJ| ||||_T_vj= 150 °C,<br>_I_C= 11.5 A||0.18||| |Total switching energy|_E_ts|_V_CE= 400 V,_V_GE= 15 V,<br>_R_Gon= 47.0 Ω,<br>_R_Gof= 47.0 Ω,<br>_L_σ= 30 nH,_C_σ= 150 pF|_T_vj= 25 °C,<br>_I_C= 11.5 A||0.34||mJ| ||||_T_vj= 150 °C,<br>_I_C= 11.5 A||0.5||| |IGBT thermal resistance,<br>junction to case|_R_thjc|||||4.3|K/W| |IGBT thermal resistance,<br>junction to heat sink|_R_thjh|||||4.30|K/W| |Operating junction<br>temperature|_T_vj|||-40||175|°C| |_1)_<br>Measured with filter network.|||||||| _Note: Electrical Characteristic, at T_ vj _= 25°C, unless otherwise specified._ ## **3** ## **Diode** |**3**<br>**Diode**|**3**<br>**Diode**|**3**<br>**Diode**|||| |---|---|---|---|---|---| |**Table 4**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM|_T_vj≥ 25 °C||650|V| |Diode forward current,<br>limited by Tvjmax _1)_|_I_F||_T_h= 25 °C|34|A| ||||_T_h= 100 °C|21|| |Diode pulsed current,<br>limited by Tvjmax|_I_Fpuls|||57.5|A| _1)_ Limited by maximum junction temperature. Applicable for TO220 standard package. Datasheet Revision 1.10 2021-10-18 5 **IKA15N65ET6 TRENCHSTOP[™] IGBT6** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** |**Table 5**<br>**Characteristic values**|**Table 5**<br>**Characteristic values**|**Table 5**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Diode forward voltage|_V_F|_I_F= 11.5 A|_T_vj= 25 °C||1.5|1.95|V| ||||_T_vj= 125 °C||1.48||| ||||_T_vj= 150 °C||1.43||| |Reverse leakage current|_I_R|_V_R= 650 V|_T_vj= 25 °C|||30|µA| ||||_T_vj= 150 °C||450||| |Diode reverse recovery time|_t_rr|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 11.5 A,<br>_-di_F_/dt_= 400 A/µs||69||ns| ||||_T_vj= 150 °C,<br>_I_F= 11.5 A,<br>_-di_F_/dt_= 400 A/µs||113||| |Diode reverse recovery<br>charge|_Q_rr|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 11.5 A,<br>_-di_F_/dt_= 400 A/µs||0.210||µC| ||||_T_vj= 150 °C,<br>_I_F= 11.5 A,<br>_-di_F_/dt_= 400 A/µs||0.500||| |Diode peak reverse recovery<br>current|_I_rrm|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 11.5 A,<br>_-di_F_/dt_= 400 A/µs||5.1||A| ||||_T_vj= 150 °C,<br>_I_F= 11.5 A,<br>_-di_F_/dt_= 400 A/µs||8.0||| |Diode peak rate of fall of<br>reverse recovery current|_dI_rr_/dt_|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 11.5 A,<br>_-di_F_/dt_= 400 A/µs||-265||A/µs| ||||_T_vj= 150 °C,<br>_I_F= 11.5 A,<br>_-di_F_/dt_= 400 A/µs||-228||| |Diode thermal resistance,<br>junction to case|_R_thjc|||||5.8|K/W| |Diode thermal resistance,<br>junction to heat sink|_R_thjh|||||5.80|K/W| |Operating junction<br>temperature|_T_vj|||-40||175|°C| _Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet._ Datasheet Revision 1.10 2021-10-18 6 **IKA15N65ET6 TRENCHSTOP[™] IGBT6** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **Forward bias safe operating area, IGBT Collector current as a function of case temperature,** IC = f(VCE) **IGBT** D = 0 , Tvj ≥ 25 °C, VGE ≥ 15 V, Th = 25 °C IC = f(Tc)C = f(Tc) = f(Tc)c)) IC = f(Tc)C = f(Tc) = f(Tc)c)) Tvj ≤ 175 °C, VGE ≥ 15 V **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>12<br>10<br>10<br>8<br>6<br>1<br>4<br>2<br>0.1 0<br>1 10 100 25 50 75 100 125 150 175<br>Typical output characteristic, IGBT Typical output characteristic, IGBT<br>IC = f(VCE) IC = f(VCE)<br>T = 25 °C T = 150 °C<br>vj vj<br>60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2021-10-18 7 **IKA15N65ET6 TRENCHSTOP[™] IGBT6** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical transfer characteristic, IGBT** IC = f(VGE) ## VCE = 50 V **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>50<br>40<br>30<br>20<br>10<br>0<br>4 6 8 10 12 14<br>**----- End of picture text -----**<br> ## **Gate-emitter threshold voltage as a function of junction temperature, IGBT** VGEth = f(Tvj) IC = 0.20 mA **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 6<br>5<br>4<br>3<br>2<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical collector-emitter saturation voltage as a function of junction temperature, IGBT** VCEsat = f(Tvj) VGE = 15 V **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 2.6<br>2.2<br>1.8<br>1.4<br>1.0<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of collector current, IGBT** t = f(IC) VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 47 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>5 10 15 20 25<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2021-10-18 8 **IKA15N65ET6 TRENCHSTOP[™] IGBT6** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching times as a function of gate resistor, IGBT** ## **Typical switching times as a function of junction temperature, IGBT** **==> picture [540 x 614] intentionally omitted <==** **----- Start of picture text -----**<br> t = f(RG)G)) t = f(Tvj)vj))<br>IC = 11.5 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 VC = 11.5 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V = 11.5 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V = 400 V, Tvj = 150 °C, VGE = 0/15 Vvj = 150 °C, VGE = 0/15 V = 150 °C, VGE = 0/15 VGE = 0/15 V = 0/15 V IC = 11.5 A, VCE = 400 V, VGE = 0/15 V, RG = 47 ΩC = 11.5 A, VCE = 400 V, VGE = 0/15 V, RG = 47 Ω = 11.5 A, VCE = 400 V, VGE = 0/15 V, RG = 47 ΩCE = 400 V, VGE = 0/15 V, RG = 47 Ω = 400 V, VGE = 0/15 V, RG = 47 ΩGE = 0/15 V, RG = 47 Ω = 0/15 V, RG = 47 ΩG = 47 Ω = 47 Ω<br>100<br>100<br>10<br>10<br>1 1<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>Typical switching energy losses as a function of Typical switching energy losses as a function of gate<br>collector current, IGBT resistor, IGBT<br>E = f(IC)C)) E = f(RG)G))<br>VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 47 ΩCE = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 47 Ω = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 47 Ωvj = 150 °C, VGE = 0/15 V, RG = 47 Ω = 150 °C, VGE = 0/15 V, RG = 47 ΩGE = 0/15 V, RG = 47 Ω = 0/15 V, RG = 47 ΩG = 47 Ω = 47 Ω IC = 11.5 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 VC = 11.5 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V = 11.5 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V = 400 V, Tvj = 150 °C, VGE = 0/15 Vvj = 150 °C, VGE = 0/15 V = 150 °C, VGE = 0/15 VGE = 0/15 V = 0/15 V<br>1.2 0.80<br>0.70<br>1.0<br>0.60<br>0.8<br>0.50<br>0.6 0.40<br>0.30<br>0.4<br>0.20<br>0.2<br>0.10<br>0.0 0.00<br>4 8 12 16 20 24 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> **==> picture [540 x 614] intentionally omitted <==** **----- Start of picture text -----**<br> t = f(RG)G)) t = f(Tvj)vj))<br>IC = 11.5 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 VC = 11.5 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V = 11.5 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V = 400 V, Tvj = 150 °C, VGE = 0/15 Vvj = 150 °C, VGE = 0/15 V = 150 °C, VGE = 0/15 VGE = 0/15 V = 0/15 V IC = 11.5 A, VCE = 400 V, VGE = 0/15 V, RG = 47 ΩC = 11.5 A, VCE = 400 V, VGE = 0/15 V, RG = 47 Ω = 11.5 A, VCE = 400 V, VGE = 0/15 V, RG = 47 ΩCE = 400 V, VGE = 0/15 V, RG = 47 Ω = 400 V, VGE = 0/15 V, RG = 47 ΩGE = 0/15 V, RG = 47 Ω = 0/15 V, RG = 47 ΩG = 47 Ω = 47 Ω<br>100<br>100<br>10<br>10<br>1 1<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>Typical switching energy losses as a function of Typical switching energy losses as a function of gate<br>collector current, IGBT resistor, IGBT<br>E = f(IC)C)) E = f(RG)G))<br>VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 47 ΩCE = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 47 Ω = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 47 Ωvj = 150 °C, VGE = 0/15 V, RG = 47 Ω = 150 °C, VGE = 0/15 V, RG = 47 ΩGE = 0/15 V, RG = 47 Ω = 0/15 V, RG = 47 ΩG = 47 Ω = 47 Ω IC = 11.5 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 VC = 11.5 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V = 11.5 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V = 400 V, Tvj = 150 °C, VGE = 0/15 Vvj = 150 °C, VGE = 0/15 V = 150 °C, VGE = 0/15 VGE = 0/15 V = 0/15 V<br>1.2 0.80<br>0.70<br>1.0<br>0.60<br>0.8<br>0.50<br>0.6 0.40<br>0.30<br>0.4<br>0.20<br>0.2<br>0.10<br>0.0 0.00<br>4 8 12 16 20 24 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2021-10-18 9 **IKA15N65ET6 TRENCHSTOP[™] IGBT6** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching energy losses as a function of junction temperature, IGBT** E = f(Tvj) **==> picture [203 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> IC = 11.5 A, VCE = 400 V, VGE = 0/15 V, RG = 47 Ω<br>**----- End of picture text -----**<br> **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical gate charge, IGBT** VGE = f(QGE) IC = 11.5 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of collector emitter voltage, IGBT** E = f(VCE) IC = 11.5 A, VGE = 0/15 V, Tvj = 150 °C, RG = 47 Ω **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>200 250 300 350 400 450 500<br>**----- End of picture text -----**<br> **Typical capacitance as a function of collector-emitter voltage, IGBT** C = f(VCE) f = 1000 kHz, VGE = 0 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0 5 10 15 20 25 30<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2021-10-18 10 **IKA15N65ET6 TRENCHSTOP[™] IGBT6** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **IGBT transient thermal impedance, IGBT** Zth = f(tp) D = tp/T ## **Power dissipation as a function of case temperature, IGBT** **==> picture [51 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> Ptot = f(Tc)<br>T ≤ 175 °C<br>vj<br>**----- End of picture text -----**<br> **==> picture [540 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>30<br>1<br>25<br>20<br>0.1<br>15<br>0.01 10<br>5<br>0.001 0<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1 10 100 25 50 75 100 125 150 175<br>Diode transient thermal impedance as a function of Typical diode forward current as a function of forward<br>pulse width, Diode voltage, Diode<br>Zth = f(tp) IF = f(VF)<br>D = tp/T<br>60<br>1 50<br>40<br>0.1<br>30<br>0.01<br>20<br>0.001<br>10<br>0.0001 0<br>1E-7 1E-6 1E-5 0.00010.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2021-10-18 11 **IKA15N65ET6 TRENCHSTOP[™] IGBT6** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical diode forward voltage as a function of Typical reverse recovery time as a function of diode junction temperature, Diode current slope, Diode** VF = f(Tvj) **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 2.1<br>1.9<br>1.7<br>1.5<br>1.3<br>1.1<br>0.9<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> **Typical reverse recovery charge as a function of diode current slope, Diode** Qrr = f(diF/dt) VR = 400 V, IF = 11.5 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0.75<br>0.60<br>0.45<br>0.30<br>0.15<br>0.00<br>300 450 600 750 900<br>**----- End of picture text -----**<br> trr = f(diF/dt) VR = 400 V, IF = 11.5 A **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>110<br>100<br>90<br>80<br>70<br>60<br>50<br>300 450 600 750 900<br>**----- End of picture text -----**<br> ## **Typical reverse recovery current as a function of diode current slope, Diode** Irr = f(diF/dt) VR = 400 V, IF = 11.5 A **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 11<br>10<br>9<br>8<br>7<br>6<br>5<br>4<br>300 450 600 750 900<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2021-10-18 12 **IKA15N65ET6 TRENCHSTOP[™] IGBT6** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Typical diode peak rate of fall of reverse recovery current as a function of diode current slope, Diode** dIrr/dt = f(diF/dt) VR = 400 V, IF = 11.5 A **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 0<br>-100<br>-200<br>-300<br>-400<br>-500<br>300 450 600 750 900<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2021-10-18 13 **IKA15N65ET6 TRENCHSTOP[™] IGBT6** **5 Package outlines** **5 Package outlines** **==> picture [105 x 47] intentionally omitted <==** ## **Package Drawing PG-TO220-3-FP** **Figure 1** Datasheet Revision 1.10 2021-10-18 14 **IKA15N65ET6 TRENCHSTOP[™] IGBT6** **6 Testing conditions** **6 Testing conditions** **==> picture [105 x 47] intentionally omitted <==** **==> picture [463 x 565] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>Figure D.<br>10% V GE<br>t<br>I C (t)<br>CC<br>2% I C t<br>V CE (t) Figure E. Dynamic test circuit<br>Parasitic inductance Ls,<br>parasitic capacitor Cs,<br>relief capacitor C ,r<br>t 2 t 4 (only for ZVT switching)<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 1.10 2021-10-18 15 **IKA15N65ET6 TRENCHSTOP[™] IGBT6** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |V2.1|2017-09-11|Final Datasheet| |V2.2|2017-11-30|New Gfs Value at VCE=20V| |V2.3|2019-09-13|Change of Rth/Zth values and maximum DC ratings| |1.10|2021-10-18|Change of unit in thermal impedance figures| Datasheet Revision 1.10 2021-10-18 16 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2021-10-18 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2021 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-AAL161-004** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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