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IKA15N65F5XKSA1
IGBT, 15 A, 1.6 V, 33.3 W, 650 V, TO-220, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:33.3W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins;
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 33.3W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 15A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.744 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
## IGBT High speed 5 FAST IGBT in TRENCHSTOP _ TM 5 technology copacked with RAPID 1 ## IKA15N65F5 IKA15N65F5 **==> picture [469 x 296] intentionally omitted <==** **----- Start of picture text -----**<br> High speed 5 FAST IGBT in TRENCHSTOP_ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed F5 technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ 650V breakdown voltage<br>G<br>«Low Q G E<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant »<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications: a.9"/<br>* Solar converters /<br>¢ Uninterruptible power supplies<br>* Welding converters<br>* Mid to high range switching frequency converters<br>G<br>C<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKA15N65F5|650V|15A|1.6V|175°C|K15EF5|PG-TO220-3 FP| 2 IKA15N65F5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.�2.1,��2015-05-05 IKA15N65F5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emitter voltage|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||14.0<br>8.5|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||45.0|A| |Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||45.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||12.3<br>7.3|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||45.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||33.3<br>16.7|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**|||||| |---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**| |**Characteristic**|||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||4.50|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)|||5.60|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)|||65|K/W| Rev.�2.1,��2015-05-05 4 IKA15N65F5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=9.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.15mA,_V_CE=_V_GE|3.2|4.0|4.8|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|22.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|930|-|pF| |Output capacitance|_C_oes||-|24|-|| |Reverse transfer capacitance|_C_res||-|4|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=15.0A,<br>_V_GE=15V|-|38.0|-|nC| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns| |Rise time|_t_r||-|7|-|ns| |Turn-off delaytime|_t_d(off)||-|150|-|ns| |Fall time|_t_f||-|16|-|ns| |Turn-on energy|_E_on||-|0.13|-|mJ| |Turn-off energy|_E_off||-|0.04|-|mJ| |Total switchingenergy|_E_ts||-|0.17|-|mJ| Rev.�2.1,��2015-05-05 5 IKA15N65F5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns| |---|---|---|---|---|---|---| |Rise time|_t_r||-|4|-|ns| |Turn-off delaytime|_t_d(off)||-|190|-|ns| |Fall time|_t_f||-|10|-|ns| |Turn-on energy|_E_on||-|0.04|-|mJ| |Turn-off energy|_E_off||-|0.02|-|mJ| |Total switchingenergy|_E_ts||-|0.06|-|mJ| |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=1000A/µs|-|50|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.19|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|8.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-190|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=1000A/µs|-|22|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.10|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|8.6|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-620|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=150°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns| |Rise time|_t_r||-|10|-|ns| |Turn-off delaytime|_t_d(off)||-|190|-|ns| |Fall time|_t_f||-|5|-|ns| |Turn-on energy|_E_on||-|0.18|-|mJ| |Turn-off energy|_E_off||-|0.06|-|mJ| |Total switchingenergy|_E_ts||-|0.24|-|mJ| |||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|15|-|ns| |Rise time|_t_r||-|4|-|ns| |Turn-off delaytime|_t_d(off)||-|230|-|ns| |Fall time|_t_f||-|30|-|ns| |Turn-on energy|_E_on||-|0.06|-|mJ| |Turn-off energy|_E_off||-|0.02|-|mJ| |Total switchingenergy|_E_ts||-|0.08|-|mJ| 6 Rev.�2.1,��2015-05-05 IKA15N65F5 **==> picture [146 x 65] intentionally omitted <==** High�speed�switching�series�fifth�generation **Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=1000A/µs|-|67|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|0.39|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|9.6|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-140|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=1000A/µs|-|35|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.20|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|10.2|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-360|-|A/µs| Rev.�2.1,��2015-05-05 7 ## High speed switching series fifth generation ## IKA15N65F5 **==> picture [475 x 312] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>a<br>P| eee oe re | I<br>Pt PALIN AST aS 30 Nf oP of pod<br>ANN aZNilll| x<br>10 25<br>AUSTIN 2 LAN TE [LL]<br>Bb2 pf]EERIE| NeASAIN Zz \<br>ge PORN| tp=1µs \ L & 20 EV<br>10µs<br>3 Ae SSN a \<br>O 50µs ag 15<br>2 1 100µs<br>fe) re e)<br>200µs 10<br>© _—PaeesCOrNEER © \<br>500µs<br>TT<br>= DC OE 5 PF Pt IN<br>er |||<br>itr<br>0.1 0<br>TSS LE |EN<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br> **==> picture [472 x 312] intentionally omitted <==** **----- Start of picture text -----**<br> 14.0 45<br>\ 40 Reeve<br>12.0<br>\ Ps! i f<br>N SS<br>35 VGE=20V<br>10.0 18V<br>plo: PN). : 30 | CHaye J<br>Ww 12V Ih<br>Ww ON de ace<br>8.0 25 10V<br>8V<br>Kb Re<br>20<br>6.0 7V<br>Ww[NOWw penL<br>6V<br>15<br>4.0 5V<br>PECAN° Yo a ASALINN hi<br>10<br>4V<br>2.0<br>Eee Vom<br>5<br>LN EZ RR\<br>0.0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br> 8 IKA15N65F5 **==> picture [472 x 302] intentionally omitted <==** **----- Start of picture text -----**<br> 45 45<br>Tj=25°C<br>Tj=150°C<br>40 40<br>PP; yA) EE<br>= Ly / ds<br>35 VGE=20V ee 35 e<br>z 18V — Yi\ =<br>30 30<br>12V<br>fi _——-Ff ni<br>ec 25 10V _ |fyfy &c 25<br>) / )<br>8V<br>fe) 20 HY as | 20<br>7V<br>; MYee ey, «a fe):<br>6V<br>= 15 Lit = 15 ’<br>5V<br>SE 10 NOK— W& 10 /<br>4V<br>y,<br>5 5<br>PSK TT OL<br>PASa OL——|__—<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=150°C) ( V CE=20V)<br>I C I C<br>**----- End of picture text -----**<br> **==> picture [471 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 2.00 1000<br>e IICC=3,8A=7,5A e - aoc i1| ttd(off)f ee eSa eeee<br>S IC=15A td(on) es ee<br>tr<br>o = | Ue ——<br>1.75<br>= Se nne<br>el rd we | a eeeee<br>p fee PER EEE<br>100<br>< p ° T n F _——— S — — —— —F<br>“” 1.50 uw a a a<br>a = a ee<br>ESS SE<br>Bey ee ee eee<br>E SS O rr ee ee<br>pe |) Ee<br>1.25<br>S E |- “<br>Ww L | 10 |) SSSeo<br>aaPpa totJ a Pea<br>(e) po |<br>1.00<br>Ee eee<br>0.75 1<br>0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br> Figure 7. Typical a function ( _V_ GE=15V) Figure 8. (inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=39 Ω , Dynamic test Figure E) 9 IKA15N65F5 **==> picture [489 x 623] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a SS ES ES eS 1000 a a<br>1 t td(off) a he t td(off) a<br>| tf tf<br>td(on) td(on)<br>| = tr a ee[—— ee || = tr eea A ee ee<br>re ee ee<br>————————<br>a n eee ee ee ee eeee<br>— 100 a a a ee ee — 100 a ss<br>uwn —— eeeeeee eee een OE?) a<br>= poa a a a | =| a eea a ee ee<br>F a ee ee a eeee<br>O a a ee a ee<br>a<br>= eo _ =<br>ep)Bfs 10 okabeeaa asees keeeeteeeeeee | ep)- 10 aa reSSrr eeeS eeee a e<br>aeeer eeSS SS pona a a<br>a ees ee ee a e e<br>a a ee ee ee eee a es es<br>a a ee eee reeee ee ee ee<br>1 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =7,5A,Dynamic test circuit in I C =7,5A, r G=39 ,Dynamic test circuit in<br>Figure E) Figure E)<br>5.5 1.6<br>Yo<br>typ. Eoff<br>_> 5.0 min.max. 1.4 EEonts 7<br>4.5<br>F 7<br>1.2<br>ee yA £ Z<br>(a) 4.0 e ~ _ e /<br>i ~~. aN a / ‘<br>1.0<br>are<br>3.5<br>SP KL [Rd]<br>0.8<br>3.0<br>fvBPs)~ PANS~~ ‘S\| 3G /< /<br>E-- 0.6<br>~<br>2.5<br>uwuE 0.4 ‘| 7<br>Ee 2.0 NA = i |Z A<br>° SOn Leei 7<br>0.2<br>1.5 Be<br>1.0 0.0<br>PPT [Py)] \ va ea<br>0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. Gate-emitter of junction ( _I_ C=0.15mA) Figure 12. (inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=39 Ω ,Dynamic test Figure E) 10 IKA15N65F5 **==> picture [476 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 0.35 0.300<br>Eoff Eoff<br>Eon 0.275 Eon<br>Ets Ets<br>0.30<br>> Lat > 0.2500.225 Ff a | |<br>0.25<br>op)7) “a “— = 7)Q 0.200 Loo aaa<br>0.20 0.175<br>7 — —_—<br>0.150<br>x “ Lo a x = _o<br>0.15 0.125<br>OL7=O 0.100<br>0.10<br>0.075<br>By ——=—<br>0.050<br>0.05<br>0.025<br>0.00 0.000<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br> Figure 13. **==> picture [151 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =7,5A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> Figure 14. (inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =7,5A, _r_ G=39 ,Dynamic test circuit in Figure E) **==> picture [477 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 0.300 16<br>Eoff 130V<br>0.275 Eon 520V<br>Ets 14<br>[= J } Ed ) | yy<br>0.250<br>ee eee 7<br>=<br>0.225 12<br>”<br>7 Ww /<br>a) 0.200 < /<br>10<br>en ed ae 4<br>0.175<br>> >< < g /<br>ft 0.150 4 rm 8 7<br>iz oe vLZa F=/<br>0.125<br>6<br>r<br>0.100<br>Ee /<br>0.075 4<br>0.050<br>2<br>PRS Ae ee<br>0.025<br>0.000 0<br>200 250 300 350 400 450 500 0 5 10 15 20 25 30 35 40<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br> Figure 15. Figure 16. Typical ( _I_ C=15A) **==> picture [91 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> T vj =150°C, V GE=15/0V,<br>**----- End of picture text -----**<br> _I_ C =7,5A, _r_ G=39 Figure E) 11 IKA15N65F5 **==> picture [482 x 625] intentionally omitted <==** **----- Start of picture text -----**<br> e C s iss Toe<br>Coss<br>Crss<br>[-= | -—}—f = LO TE eT<br>my el<br>1000<br>D=0.5<br>aa a 2 1 aN NN ei Oe? allli 0 .2 Lt<br>LL Lr ae 0.1<br>S op) Cr aC | |<br>0.05<br>uu a a a 7) FAR AHH THE<br>S 100 Vs ee ee ul SE TT eee 0.02 ele<br>~¢ Ea————— en ae a XZ Aea pe a 0.01<br>oO6 (AMeee I<br>ES esGe a Wi ppl ees J single pulse<br>S<br>eeee 0.1 Dy 0nT<br>1S) ee eee Po 4-~~| 5 Zea ee<br>° \ Me<br>\. Lu YT AT TTTT<br>10 Ww Th<br>SSS a 072A A<br>a es es es<br>ape > HITATTT) CHT ne, cttce — |Il<br>a AAA A<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.2571578 0.5731833 0.4460929 0.5209172 1.804766 0.8978826<br>τ i[s]: 1.8E-4 1.2E-3 9.1E-3 0.1021129 1.367234 7.180227<br>1 Poteeot ee ee 0.01 | CT TT TT<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>CT TT Tl hero 90 Ss |<br>Tj=25°C, IF = 7.5A<br>:= To A aera| 80 pei e Tj=150°C, IF = 7.5A I ] | |[||<br>HAT ——<br>1<br>O Series eee 720i See D=0.5 HIE] | \<br>Z Ee Sea 0.2 oo N<br>FED PeraPTI CAVA Crs En 0.1 | | 2Ss 70 \ ~<br>0.05<br>0.02<br>ee 0.1 mc<br>0.01 60<br>s—| ———————— oe uw<br>single pulse<br>CS ee PN ELE PN<br>- A WW ENONN<br>+ COANE) 2 50 |<br>(ep)2 0.01 LAMM ieee eft UPMTT<br>Z / Ri Ro Ww<br>F YT0faeeeeeeesTi tT (Hl I!) ot 40 P| |— |—ee| |<br>oH i: 1 He 2 3 4 5 6 Pt | fff<br>ri[K/W]: 0.9520941 1.171948 0.5287944 0.4647577 1.671981 0.8104246<br>τ i[s]: 2.1E-4 1.1E-3 8.9E-3 0.09325149 1.367755 7.182978<br>0.001 30<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100 600 800 1000 1200 1400 1600 1800 2000<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>C<br>c)th(j-<br>Z<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> Figure 19. Diode function ( _D_ = _t_ p/T) Figure 20. Typical of diode ( _V_ R=400V) 12 IKA15N65F5 **==> picture [477 x 622] intentionally omitted <==** **----- Start of picture text -----**<br> 0.50 17.5<br>Tj=25°C, IF = 7.5A Tj=25°C, IF = 7.5A<br>0.45 a Tj=150°C, IF = 7.5A e Tj=150°C, IF = 7.5A e<br>e e |<br>| T T T]<br>eg2 0.40 LLa= TT [i] [tt}.] = = 15.0 | YYi<br>Ww Kk 7<br>Be<br>ina 0.35 iad 7<br><x o<br>r a)<br>ee ee eee<br>>ee>Oeea 0.300.250.20 a Ww= 12.510.0 eez aaeZO ae<br>0.15<br>itor cr eeuaae<br>ootee 0.10 a 7.5 ee4 eee<br>ERR Cees<br>0.05<br>0.00 5.0<br>600 800 1000 1200 1400 1600 1800 2000 600 800 1000 1200 1400 1600 1800 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>function of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>0 27<br>Tj=25°C, IF = 7.5A Tj=25°C<br>Tj=150°C, IF = 7.5A Tj=150°C<br>24<br>-50 a ee ee ee ee<br>a<br>21<br>z -100<br>18<br>-150<br>15<br>><br>P|2NNO UTE<br>-200<br>3a & 12<br>-250<br>8 PN = i]<br>9<br>et NANS. y<br>ne} UNE<br>-300<br>\ 6<br>-350<br>ee 3 ee<br>-400 0<br>600 800 1000 1200 1400 1600 1800 2000 0.0 0.5 1.0 1.5 2.0 2.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Q rr I rr<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br> Figure 23. Figure 24. ( _V_ R=400V) 13 IKA15N65F5 **==> picture [233 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>IF=4,5A<br>IF=9A<br>IF=18A<br>p e<br>1.8 e<br>eeLu 1.6 e e<br>xt<br>Kkee<br>I<br>><br>aeQ 1.4 eee<br>m4<br>Se fe<br>=<br>° 1.2 = |<br>ee ee<br>pe<br>1.0<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 25. 14 IKA15N65F5 High�speed�switching�series�fifth�generation **==> picture [146 x 65] intentionally omitted <==** ## **Package Drawing PG-TO220-3-FP** 15 Rev.�2.1,��2015-05-05 IKA15N65F5 High�speed�switching�series�fifth�generation **==> picture [146 x 65] intentionally omitted <==** ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [153 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br> Figure C. **Definition of diode switching characteristics** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 16 Rev.�2.1,��2015-05-05 IKA15N65F5 ## IKA15N65F5 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |1.1|2012-11-09|Preliminarydatasheet| |1.2|2013-12-17|New MarkingPattern| |2.1|2015-05-05|Final data sheet| ## **Information** ## **Warnings** endangered. 17
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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