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IKA15N65ET6XKSA2
IGBT, 17 A, 1.5 V, 45 W, 650 V, TO-220, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:17A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:45W; Collector Emitter Voltage V; Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP IGBT6
- Power Dissipation: 45W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 17A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 1.4 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IKA15N65ET6 CE(sat) * Maximum junction temperature 175°C ¢ Short circuit withstand time 3us Trench and field-stop technology for 650V * very tight parameter distribution * high ruggedness, temperature stable behavior * low V CEsat and positive temperature coefficient * Low gate charge Q G ¢ Pb-free lead plating; ROHS compliant ¢ Very soft, fast recovery anti-parallel Rapid diode *« Complete product spectrum and PSpice Models: www.infineon.com/igbt ## Drives **==> picture [100 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>2<br>longs<br>“thy y<br>/;<br>G<br>C<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKA15N65ET6|650V|15A<br>1)|1.5V<br>2)|175°C|K15EET6|PG-TO220-3 FP| 1) Limited by maximum junction temperature. Applicable for TO-220 Standard package. - 2) Measured under conditions specified on page 4. Datasheet www.infineon.com 2017-11-30 IKA15N65ET6 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP™�IGBT6 ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 2 V�2.2 2017-11-30 Datasheet IKA15N65ET6 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP™�IGBT6 ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax1)<br>_T_c=25°C<br>_T_c=100°C|_I_C||17.0<br>11.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||57.5|A| |Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||57.5|A| |Diodeforwardcurrent,limitedby_T_vjmax1)<br>_T_c=25°C<br>_T_c=100°C|_I_F||17.0<br>10.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||57.5|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤360V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs| |Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||45.0<br>22.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M2.5 screw, PG-TO220-3 FP<br>Maximum of mounting processes: 3|_M_||0.5|Nm| |IsolationvoltageRMS,_f_=50/60Hz,_t_=1min|_V_isol||2500|V| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|3.35|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|4.77|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W| 1) Limited by maximum junction temperature. Applicable for TO220 standard package. 3 V�2.2 2017-11-30 Datasheet IKA15N65ET6 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP™�IGBT6 ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown<br>voltage1)|_V_(BR)CES|_V_GE=0V,_I_C=0.10mA|650|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=11.5A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.50<br>1.65<br>1.75|1.90<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=11.5A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.50<br>1.48<br>1.43|1.95<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.20mA,_V_CE=_V_GE|4.8|5.6|6.4|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>450|30<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=11.5A|-|11.6|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1020|-|pF| |Output capacitance|_C_oes||-|50|-|| |Reverse transfer capacitance|_C_res||-|20|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=11.5A,<br>_V_GE=15V|-|37.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH| |Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤360V,<br>_t_SC≤3µs<br>_T_vj=150°C|-|120|-|A| 1) Measured with filter network. V�2.2 2017-11-30 Datasheet 4 IKA15N65ET6 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP™�IGBT6 ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=11.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,<br>_L_σ=30nH,_C_σ=150pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|30|-|ns| |Rise time|_t_r||-|22|-|ns| |Turn-off delaytime|_t_d(off)||-|117|-|ns| |Fall time|_t_f||-|42|-|ns| |Turn-on energy|_E_on||-|0.23|-|mJ| |Turn-off energy|_E_off||-|0.11|-|mJ| |Total switchingenergy|_E_ts||-|0.34|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=11.5A,<br>_di_F_/dt_=400A/µs|-|69|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.21|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|5.1|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-265|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=150°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=11.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,<br>_L_σ=30nH,_C_σ=150pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|27|-|ns| |Rise time|_t_r||-|23|-|ns| |Turn-off delaytime|_t_d(off)||-|135|-|ns| |Fall time|_t_f||-|67|-|ns| |Turn-on energy|_E_on||-|0.32|-|mJ| |Turn-off energy|_E_off||-|0.18|-|mJ| |Total switchingenergy|_E_ts||-|0.50|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=11.5A,<br>_di_F_/dt_=400A/µs|-|113|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|0.50|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|8.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-228|-|A/µs| V�2.2 2017-11-30 Datasheet 5 IKA15N65ET6 **==> picture [475 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>PAE EE<br>ee a eeeee<br>Pt ALT<br>a | | 40<br>|Bo 10 fee eeet tp = 1µs a et<br>2 eet = E e 8Yo 30<br>nn<br>y | eT TTT EET EET g<br>ee<br>20<br>SLAM 1<br>(e) UMM LT)<br>° eeoo eo)<br>Peete [ee] el ooo at<br>a eee<br>a ee IH 10<br>0.1 0<br>1 10 100 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 15V) ( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br> **==> picture [233 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 18<br>16<br>aN<br>14<br>\<br>: 12 \<br>ef KN<br>fi IN<br>10<br>OO \<br>8<br>;<br>PN<br>6<br>4<br>2<br>ptt | pA<br>| | tA<br>0<br>pt<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>Figure 3. Collector current as a function of case<br>temperature<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C<br>**----- End of picture text -----**<br> **==> picture [231 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>50<br>ZA<br>Zip /<br>: 40 VGE=20V J LAAT<br>ls | ZY<br>18V<br>fi Ga WG 7<br>15V<br>30<br>OO; 12V Salah[LEZ (pan<br>10V<br>EE 20 8V<br>7V<br>6V<br>10<br>SRN<br>L N<br>0<br>P e<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br> Figure 4. Typical ( _T_ vj=25°C) 6 Datasheet 2017-11-30 IKA15N65ET6 **==> picture [471 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 60 60<br>Tvj = 25°C<br>| Tvj = 150°C /<br>50 50<br>VGE=20V ee [ee] [\f__f<br>18V<br><<br>40 40<br>2é | [SW:] 15V TT / | =<br>PP 12V SIT / 5<br>x oo lt :<br>© 30 10V lf / x 30 |<br>2 8V | / | 3<br>PL a Ca<br>7V<br>4 20 N ILEe 5 20<br>6V<br>ie<br>KS<br>10 TENN 10<br>VanjooNA |<br>Ao | NI _<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br> **==> picture [85 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 5. Typical<br>( T vj=150°C)<br>**----- End of picture text -----**<br> **==> picture [80 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 6. Typical<br>( V CE=50V)<br>**----- End of picture text -----**<br> **==> picture [471 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 2.6 Lt<br>IC = 23A<br>IC = 11.5A<br>IC = 5.75A 7<br>S ee eee<br>: a 100<br>fe) 4 [_<br>Ee 2.2 a<br><& 7~~ ory poea<br>E a s a ee ee<br>y =a 2 ee ee e ee<br>Phe ee e<br>1.8<br>uu _4-7| &<br>10<br>r = = po<br>O —_—— n<br>lu — . a<br>fe) 1.4 ee<br>td(off)<br>a ee | tf<br>td(on)<br>tr<br>1.0 1<br>0 25 50 75 100 125 150 175 5 10 15 20 25<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =150°C, V CE=400V,=400V,<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br> (inductive load, _T_ vj =150°C, _V_ CE=400V,=400V, _V_ GE =15/0V, _r_ G=47 Ω , Dynamic test Figure E) Datasheet 7 2017-11-30 IKA15N65ET6 **==> picture [474 x 291] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>100 ee aea asess ee<br>a Oy a eee<br>= a a a a Po—yt—<~wYti<‘<‘zYSCS:*‘<‘s;SS<br>na PAa SOee eeea eeOsQO<br>2 [| [ers 2 [o ad<br>9 | |steps<br>OI Pad we | | | IgO 10 Py yyy<br>10<br>” [_ + —_* ” a<br>a ee De ee ee ee ee ee ee es ee<br>a ee ee eee ey ee ee<br>td(off) td(off)<br>tf tf<br>td(on) td(on)<br>tr tr<br>1 1<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V,=400V, (inductive load, V CE =400V, V GE=15V,=15V,<br>V GE =15/0V, I C =11.5A,Dynamic test circuit in I C =11.5A, r G=47=47 Ω ,Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br> **==> picture [471 x 349] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V,=400V, (inductive load, V CE =400V, V GE=15V,=15V,<br>V GE =15/0V, I C =11.5A,Dynamic test circuit in I C =11.5A, r G=47=47 Ω ,Dynamic test circuit in<br>Figure E) Figure E)<br>6 1.2<br>typ. Eoff<br>Eon /<br>co i—_ | /<br>Ets<br>Ww 1.0 7<br>Q5<br>F<br>5<br>5 aN e /<br>> NI uwn //<br>a 2 0.8 /<br>ro} oO / /<br>= 4 7 7<br>oO > / 7<br>4 0.6<br>= ul a 4<br>o wi 7 y7<br>= oO 0.4 Z<br>uw)ul \ Ee 7 v y<br>3<br>5 ° o ““ ra<br>0.2<br>\ < a<br>2 0.0<br>25 50 75 100 125 150 175 4 8 12 16 20 24<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. Gate-emitter of junction ( _I_ C=0.2mA) Figure 12. **==> picture [151 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=47 Ω ,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> 8 Datasheet 2017-11-30 IKA15N65ET6 **==> picture [474 x 341] intentionally omitted <==** **----- Start of picture text -----**<br> 0.80 0.6<br>Eoff Eoff<br>Eon Eon<br>0.70 Ets Ets<br>0.5<br>a<br>5 oo _ ay paea <—<br>0.60<br>Lu oo Lu “7<br>dp)o Pea dp)7p) 0.4 oo a7<br>e)| 0.50 4 e) “7<br>L<br>> = | Leo<br>“7 _ > - —_—<br>Ww 0.40 ae y 0.3 =<br>i Ul — Ww eo<br>oO — oO saa<br>Zz 0.30 1, Zz ~<br>_ 0.2<br>—a—<br>: Le = ——<br>0.20<br>0.1<br>0.10<br>0.00 0.0<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15V,<br>V GE =15/0V, I C =11.5A, Dynamic test circuit in I C =11.5A, r G=47 Ω ,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br> **==> picture [471 x 313] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7 16 P|<br>Eoff — V CC = 130V<br>Eon “ —- V CC =520V /<br>Ets vy 14 — /<br>0.6<br>7<br>—€ “ : Ss 12 tl AY/<br>op)(op)j 0.5 7“ < aTPLEE IAAL/<br>10<br>ro)a “ 7 — /<br>y 7 re)<br>0.4<br>uw4 7“ 7 7 thE 8 [|_|<br>a aaE<br>0.3<br>9<br>< “ “ - Za Luin 6<br>Oaa<br>E4<br>0.2<br>L—} OO /<br>4<br>- =<br>0.1 Zee 2 /LE<br>EE |<br>0.0 0<br>200 250 300 350 400 450 500 0 5 10 15 20 25 30 35 40<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=11.5A)<br>GE<br>V<br>E<br>**----- End of picture text -----**<br> **==> picture [91 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> T vj =150°C, V GE=15/0V,<br>**----- End of picture text -----**<br> **==> picture [71 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> I C =11.5A, r G=47 Ω<br>Figure E)<br>**----- End of picture text -----**<br> 9 Datasheet 2017-11-30 IKA15N65ET6 **==> picture [475 x 600] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>1<br>D = 0.5<br>Se Sf |<br>0.2<br>ec = PHT DAAC TM ITU TH TH<br>\ WA) 0.1<br>Lu 100 PDP TO) z: See7a dinA IOA<br>0.1<br>5 a SZ 0.05 roo<br>0.02<br><x SSeS SSS ee<br>Oo = = es VV<br>o a ee= ee ee ee ee = si 0.01<br>a ee F ane Ue<br>a we<br>single pulse<br>10 0.01<br>a a 1) a<br>| ———__ Cies _ | | . 7 TTI TTT TTT |<br>= Coes I i, ole |<br>e Cres e i: 1 2 3 4 5 6 7<br>ri[K/W]: 0.04003 0.43484 0.54864 0.43747 0.95811 0.86297 0.06719<br>τ i[s]: 3.1E-5 3.3E-4 2.7E-3 0.02497 0.35182 2.2283 15.13<br>1 Tr tf fff 0.001 a |<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>120<br>Tvj = 25°C, IF = 11.5A<br>Tvj = 150°C, IF = 11.5A<br>= SEBniimasESimma acaelee ear mill atl Hl 110 — — «FJ<br>SINE 1 ACL <<br>oO ICT<br>D = 0.5<br>Zz SeaTIN 1 | | Cc 100<br>= SS ce — _T><br>i oS aU | | 0.2<br>cca FHS nm A a<br>wi 0.1 eS2eV ><br>0.1<br>90<br>o Siti eea' cai wet eee ett aa ma tt<br>aS EScS 0.05 CO TT Tn TT >O<br>Fedim HICSS 0.02 LAMTTTy<br>80<br>= 0.01 UAT OIE<br>0.01<br>im | COM Tn TT Lu<br>single pulse<br>5= Heati a aMeHa > 70 Pf pL<br>2 AN TUTTE TTT TTT R, H T R | -<br>ae 0.001 0) NH pep<br>° HEHE -——<br>60<br>i: 1 2 3 4 5 6 7<br>ri[K/W]: 0.13063 1.17649 1.04614 0.52844 0.96144 0.86057 0.06728<br>τ i[s]: 3.0E-5 3.2E-4 2.4E-3 0.02384 0.35133 2.2275 15.15<br>1E-4 | en He CE Trt TC S/R 1C2=Fe/Re | 50 Pf pp<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100 300 450 600 750 900<br>t p ,PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>C<br>c)th(j-<br>Z<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> Figure 19. Diode function ( _D_ = _t_ p/T) Figure 20. ( _V_ R=400V) 10 Datasheet 2017-11-30 IKA15N65ET6 **==> picture [475 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 0.75 11<br>Tvj = 25°C, IF = 11.5A Tvj = 25°C, IF = 11.5A<br>Tvj = 150°C, IF = 11.5A Tvj = 150°C, IF = 11.5A<br>OO —<br>10<br>7<br>: 0.60 — -<br>E “<br>iu 9 ft eT<br>na om 7<br>< _ or 7<br>a a)<br>0.45<br>or> >or 8<br>WW uw<br>2 ><br>O O<br>7<br>0.30<br>vd rd ea<br>o oF<br>6<br>uw i 4<br>0.15<br>5<br>0.00 4<br>300 450 600 750 900 300 450 600 750 900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>function of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>0 60<br>Tvj = 25°C, IF = 11.5A Tvj = 25°C<br>Tvj = 150°C, IF = 11.5A Tvj = 150°C<br>50<br>a |<br>z -100 /<br>_<br>x8 a- 40 /)/<br>-200<br>ia rd<br>‘=(o} ~ or<br>2<br>30<br>© ~ ~ ~ 3a /<br>x TS a /<br>oO ~ xt<br>-300<br>20<br>: oS ~ | 8 /<br>() PON<br>-400<br>10<br>-500 0 a<br>300 450 600 750 900 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Q rr I rr<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br> Figure 23. Figure 24. ( _V_ R=400V) 11 Datasheet 2017-11-30 IKA15N65ET6 **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 2.1<br>1.9<br>pf dp<br>a<br>Ww 1.7<br>ee ee ee<br><x<br>KkeS fo<br>I<br>><br>Sf<br>oQ 1.5 a ~~ —<br>foe]<br>Ss<br>o<br>BS fo<br>a 1.3 eee<br>1.1<br>IF = 23A<br>IF = 11.5A<br>IF = 5.75A<br>0.9<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 25. 12 Datasheet 2017-11-30 IKA15N65ET6 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP™�IGBT6 ## **Package Drawing PG-TO220-3-FP** 13 V�2.2 2017-11-30 Datasheet IKA15N65ET6 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP™�IGBT6 ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [153 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br> Figure C. **Definition of diode switching characteristics** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 V�2.2 2017-11-30 Datasheet IKA15N65ET6 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP™�IGBT6 ## **Revision�History** IKA15N65ET6 ## **Revision:�2017-11-30,�Rev.�2.2** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |2.1|2017-09-11|Final Datasheet| |2.2|2017-11-30|New Gfs Value at VCE=20V| 15 V�2.2 2017-11-30 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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