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IKA10N65ET6XKSA2
IGBT, 15 A, 1.5 V, 40 W, 650 V, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- Available until stocks are exhausted Alternative available
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 40W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 15A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.892 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## IKA10N65ET6
CE(sat) * Maximum junction temperature 175°C ¢ Short circuit withstand time 3us Trench and field-stop technology for 650V * very tight parameter distribution * high ruggedness, temperature stable behavior * low V CEsat and positive temperature coefficient * Low gate charge Q G ¢ Pb-free lead plating; ROHS compliant ¢ Very soft, fast recovery anti-parallel Rapid diode *« Complete product spectrum and PSpice Models: www.infineon.com/igbt
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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKA10N65ET6|650V|10A<br>1)|1.5V<br>2)|175°C|K10EET6|PG-TO220-3 FP|
1) Limited by maximum junction temperature. Applicable for TO-220 Standard package.
- 2) Measured under conditions specified on page 4.
Datasheet www.infineon.com
2017-11-30
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## TRENCHSTOP™�IGBT6
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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## TRENCHSTOP™�IGBT6
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax1)<br>_T_c=25°C<br>_T_c=100°C|_I_C||15.0<br>9.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||42.5|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||42.5|A|
|Diodeforwardcurrent,limitedby_T_vjmax1)<br>_T_c=25°C<br>_T_c=100°C|_I_F||15.0<br>9.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||42.5|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤360V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||40.0<br>20.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M2.5 screw, PG-TO220-3 FP<br>Maximum of mounting processes: 3|_M_||0.5|Nm|
|IsolationvoltageRMS,_f_=50/60Hz,_t_=1min|_V_isol||2500|V|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|3.71|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|5.40|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
1) Limited by maximum junction temperature. Applicable for TO220 standard package.
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## TRENCHSTOP™�IGBT6
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown<br>voltage1)|_V_(BR)CES|_V_GE=0V,_I_C=0.10mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=8.5A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.50<br>1.65<br>1.75|1.90<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=8.5A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.43<br>1.39|1.90<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.15mA,_V_CE=_V_GE|4.8|5.6|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>360|30<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=8.5A|-|8.7|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|790|-|pF|
|Output capacitance|_C_oes||-|41|-||
|Reverse transfer capacitance|_C_res||-|12|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=8.5A,<br>_V_GE=15V|-|27.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤360V,<br>_t_SC≤3µs<br>_T_vj=150°C|-|80|-|A|
1) Measured with filter network.
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## TRENCHSTOP™�IGBT6
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=8.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,<br>_L_σ=30nH,_C_σ=150pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|30|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|106|-|ns|
|Fall time|_t_f||-|46|-|ns|
|Turn-on energy|_E_on||-|0.20|-|mJ|
|Turn-off energy|_E_off||-|0.07|-|mJ|
|Total switchingenergy|_E_ts||-|0.27|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=8.5A,<br>_di_F_/dt_=450A/µs|-|51|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.21|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|5.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-440|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=8.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,<br>_L_σ=30nH,_C_σ=150pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|27|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|123|-|ns|
|Fall time|_t_f||-|72|-|ns|
|Turn-on energy|_E_on||-|0.22|-|mJ|
|Turn-off energy|_E_off||-|0.13|-|mJ|
|Total switchingenergy|_E_ts||-|0.35|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=8.5A,<br>_di_F_/dt_=450A/µs|-|92|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.46|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-205|-|A/µs|
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45<br>eeaeeeee el| |<br>FA a 4035 PtNeett td<br>10<br>cs tp = 1µs 30 DCC<br>BF qi t= ms<br>irWw aPT TT eeeT ie)ER 25 PoP Nf\ fp<br>a fF COA Co on) &<br>eg<br>20<br>aTUM 1 2 LLee LMeee S& KR<br>15<br>8 PH EHH EEF © \<br>- en ee ee eee<br>aPT TTT 10 aw<br>ee eee 5 Py |] | tN<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 15V) ( T vj ≤ 175°C)<br>16 45<br>15<br>14 —t+++++ 40 [11 lLyVit<br>PN tT |<br>13<br>ee 35 VGE=20V TAAL<br>12<br>_ Ne eee _ ry<br>18V<br>a 11 Nay Pa<br>30<br>15V<br>10<br>ef 9 | |Nd 25 12V \ /<br>8 10V<br>a a W/o<br>7 20 8V<br>2 Ne e AG vasan<br>6 7V<br>15<br>5<br>SB foTN 6.5V Wh<br>4<br>fe ee ee 10 .\\Y<br>3<br>2 ee ene<br>5<br>1<br>ee )Naeeeee<br>Sa a<br>0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
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45 45<br>Tvj = 25°C<br>Tvj = 150°C<br>40 40<br>35 / 35 /__/<br>VGE=20V<br>Zzee= 30 18V \ N / /eeZL —Zz 30 ee<br>a 15V a<br>EENNG PG eee<br>SL 25 12V N ) 25<br>: 20 10V RSW es 20<br>e INSSONY, || :82<br>A 15 8V SONY A 15 //<br>ne 7V 2008 eee ee<br>a 6.5V NNN Ze ee<br>10 10<br>y,<br>KN<br>5 5<br>fo NT 4<br>0 0eeASS22= 0 =e=a<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 7 9 11 13<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=150°C) ( V CE=50V)<br>2.6<br>IC = 4.3A<br>IC = 8.5A<br>IC = 17A 100<br>fe)Zz 7 aea aa aes ee ee ee<br>2.2<br>E an a a ee ee ee<br>aw a 7 Felt}fT ft ft ft<br>7A) 7<br>:ia<br>E 1.8 = )<br>= - Z<br>Ww _ 7 10<br>OPf eoLee] =§ aeeeee ee ee<br>O ee ae a a<br>uw! eto - a<br>a 1.4 ee eeeeee ee<br>td(off)<br>tf<br>td(on)<br>tr<br>1.0 1<br>0 25 50 75 100 125 150 175 4 6 8 10 12 14 16 18<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>I C I C<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
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(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15V, _R_ G=47 Ω , Dynamic test Figure E)
Datasheet
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te 100 a a a<br>100 LTTO a a esa re ee<br>———————— ee ee ee ee<br>my —_——— Sea ee ee eee<br>a pasO |] eH my<br>eee<br>F=> | | | | oT|pet"] J] $F<br>10<br>Ee= 10 SS” SS E= Eaa a<br>n a a a <2) —<br>- a ee<br>pf +f + fF + + + ee ee<br>P E pf of of ft<br>td(off) td(off)<br>tf tf<br>td(on) td(on)<br>tr tr<br>1 1<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE=400V,<br>V GE =15V, I C =8.5A,Dynamic test circuit in V GE=15V, I C =8.5A, R G=47 Ω ,Dynamic test<br>Figure E) circuit in Figure E)<br>6 0.8<br>typ. Eoff<br>Eon<br>>. 0.7 Ets /<br>uw 7<br>/<br>oO@‘ 5 ~ ~~ 7p)SE 0.6 7 ‘ é<br>a<br>0.5<br>fe) n y;<br>5 >Sg<br>ar 4 \ feLu 0.4 “ 7 Waa<br>- \ 2 “ 4<br>ow Ww “ y<br>WwW o) 7<br>=E Zz= 0.3 7 “4<br>D E vo a<br>ult 3 NE= 0.2 Eeeeaeea| je oman<br>.<br>:; \ ; Eaomcan<br>0.1<br>2 0.0<br>25 50 75 100 125 150 175 4 6 8 10 12 14 16 18<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=0.15mA) (inductive load, T vj =150°C, V CE=400V,=400V,<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
(inductive load, _T_ vj =150°C, _V_ CE=400V,=400V, _V_ GE =15V, _R_ G=47 Ω ,Dynamic test circuit Figure E)
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0.50 0.4<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>0.40<br>= =o = at<br>0.3<br>” a“ n oan<br>nm oa nm L<br>7) Ute 7) oa<br>op) Ped op) -<br>fe} a fe} a<br>—! 0.30 < > aa -<br>> ae > —_<br>na a na _<br>2 - s 0.2 ==<br>Zzy)e= 0.20 < : _ BEE:y)Zz= an<br>n 0.1<br>Se ce<br>0.10<br>0.00 0.0<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15V,<br>V GE =15V, I C =8.5A, Dynamic test circuit in I C =8.5A, R G=47 ,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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0.5 16 Ld<br>Eoff — V CC = 130V<br>Eon L —- V CC =520V /<br>Ets “ 14 ee<br>YY<br>0.4<br>£ “ S 12 /<br>2) a 7 LUqu. /<br>icp) “ <x<br>oO> 0.3 aYo Kk_I 10<br>> | & J /<br>oO Yo4 Z a ind> {£_._ /<br>8<br>iO 0.2 4oa Z 7 Lain /<br>6<br>7 a“<br>4<br>.<br>0.1 z i”<br>2<br>0.0 0<br>200 250 300 350 400 450 500 0 5 10 15 20 25 30<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
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Figure 15.<br>**----- End of picture text -----**<br>
Figure 16. Typical ( _I_ C=8.5A)
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T vj =150°C, V GE=15V,<br>**----- End of picture text -----**<br>
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I C =8.5A, R G=47<br>Figure E)<br>**----- End of picture text -----**<br>
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## IKA10N65ET6
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1000 5 Hs<br>[_ th ft ATT2 1 BUNalDN ee Zc<br>eS) Steer ee ee a eal<br>L ee Zz< AH—L e kes D = 0.50.2 | PO |_|<br>Mm) wo ST LTTTT TT<br>0.1<br>my 100 | | | | | 8 eT TT<br>2 es\\ BEor 0.1 BEUNZ6/eu(0 see 0.05<br>0.02<br><x 1 aw [7S 0.01<br>cP SSS SS) aS eae<br>O° 10 EE| aeTes| =3 0.01 FCTTCOMASELULATll single pulse ss ul [IM TTT<br>a 2 BU A 1)<br>sO Or FHHer Ro |<br>[e s es E~ Coon7 TTCootTn ThCo __ |<br>| Cies 7 CTT TTT |<br>Coes<br>I Cres eei ee ee ee chor,a i: 1 2 3 4 5 pIRycotter 6 Ca=fell —! 7 |<br>ri[K/W]: 0.04912 0.59182 0.70826 0.4711 0.95942 0.86219 0.06715<br>τ i[s]: 3.0E-5 3.3E-4 2.6E-3 0.02454 0.3516 2.227 15.12<br>ee |<br>1 0.001<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>| | || || || | | 100 ee |<br>HEEFT a HtaHIE eeeTE ET m= 1M || || Tvj = 25°C, IF = 8.5A<br>St ee eeeanil Tvj = 150°C, IF = 8.5A<br>= a a aana 90 Sa<br>iii: Satin WA N —<br>SU 1 CML70IIT<br>D = 0.5<br>Zz DD | ILL| gc 80 e ee<br>a FARTS hm 0.2 CHT TTTT WI<br>=E eepl ie 0.1 | i<br>70<br>BUA 0.1 EASE Ty IEEE UML)<br>0.05<br>« aeeSO<br>xSs INST SS 0.02 ee ee> 60 Pf ff<br>ar aul wails e)<br>0.01<br>= 0.01 AIHHT TITS A TT T CTE TMT TM<br>Etre a TT<br>pa single pulse ep) 50<br>nt | | | Ww<br>Wwa eHal ona ee et ee rt ae<br>40<br>2 CIC te, re | # ——_]<br>0.001<br>ea FHHTHHIHHEH] HGF C.=4,/R, Co=te/R, pp| 30<br>i: 1 2 3 4 5 6 7 8<br>ri[K/W]: 3.4E-3 0.1602 1.569 1.215 0.551 0.963 0.8606 0.0673<br>| τ i[s]: 4.0E-6 3.0E-5 3.2E-4 2.3E-3 0.0236 0.35107 2.228 15.16<br>1E-4 20<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100 400 600 800 1000 1200<br>t p ,PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>C<br>c)th(j-<br>Z<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 19. Diode function ( _D_ = _t_ p/T)
Figure 20.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
0.60 | 12 |<br>Tvj = 25°C, IF = 8.5A Tvj = 25°C, IF = 8.5A<br>Tvj = 150°C, IF = 8.5A Tvj = 150°C, IF = 8.5A<br>11 = — Joi<br>7<br>_<br>0.50<br>am aa kK Z<br>Z|” _ ez 10 7 a=<br>< na 4<br>= 5 y a<br>Oo 0.40 oO J<br>9<br>ie ee |<br>Lu x 7<br>> > /<br>© Q /<br>uw 9 8 / Y,<br>0.30<br>a ow /<br>D) D<br>Ww ti 7 va<br>a | >i 4<br>0.20<br>6<br>0.10 5<br>400 600 800 1000 1200 400 600 800 1000 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>Q rr I rr<br>**----- End of picture text -----**<br>
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( V R=400V)<br>**----- End of picture text -----**<br>
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( V R=400V)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
0 45<br>Tvj = 25°C, IF = 8.5A Tvj = 25°C<br>Tvj = 150°C, IF = 8.5A Tvj = 150°C<br>40<br>EO |) Eas<br>-100<br>/<br>35<br>a<br>-200 a x<br>3 _ 30<br>ia‘=(o} -300 orwa 25<br>©<br>x© ing 20 /<br>8 -400 <x=<br>g ©<br>15<br>-500<br>10<br>-600<br>5<br>7<br>-700 0<br>400 500 600 700 800 900 1000 1100 1200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=400V)
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2.0<br>1.8<br>uw 1.6<br>ee ee ee<br>KkeS fo<br>I<br>a>So 1.4 fespospaape-TRHbt ==|<br>Sf<br>pp° 1.2 EEE Z|<br>pe<br>pote<br>1.0<br>IF = 4.25A<br>IF = 8.5A<br>IF =17A<br>P E<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
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## TRENCHSTOP™�IGBT6
## **Package Drawing PG-TO220-3-FP**
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## TRENCHSTOP™�IGBT6
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## TRENCHSTOP™�IGBT6
## **Revision�History**
IKA10N65ET6
## **Revision:�2017-11-30,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2017-09-11|Final Datasheet|
|2.2|2017-11-30|New Gfs Value at VCE=20V|
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## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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