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IKA08N65H5XKSA1
IGBT, 8 A, 1.65 V, 31.2 W, 650 V, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:31.2W; Collector Emitter Voltage V(br)ceo:650V; Transistor ; Available until stocks are exhausted
- MSL: -
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 31.2W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 8A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 0.823 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT
High speed 5 IGBT in TRENCHSTOP _ TM 5 technology copacked with RAPID 1
## IKA08N65H5
IKA08N65H5
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**----- Start of picture text -----**<br>
High speed 5 IGBT in TRENCHSTOP TM _ 5 technology copacked with RAPID 1<br>fast and soft anti parallel diode<br>Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>«Low Q g<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C @<br>* Qualified according to JEDEC for target applications<br>* Pb-free lead plating; RoHS compliant = ten)<br>*« Complete product spectrum and PSpice Models: “ang y/<br>http://www.infineon.com/igbt/<br>Applications:<br>* Solar converters<br>G<br>¢ Uninterruptible power supplies C E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKA08N65H5|650V|8A|1.65V|175°C|K08H655|PG-TO220-3 FP|
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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## High�speed�switching�series�fifth�generation
## **Maximum�ratings**
|**Maximumratings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emitter voltage|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||10.8<br>6.8|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||24.0|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||24.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||12.3<br>7.3|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||24.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||31.2<br>15.6|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||4.80|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||5.60|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||65|K/W|
Rev.�1.1,��2012-11-09
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=8.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=9.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.08mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=8.0A|-|17.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|500|-|pF|
|Output capacitance|_C_oes||-|16|-||
|Reverse transfer capacitance|_C_res||-|3|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=8.0A,<br>_V_GE=15V|-|22.0|-|nC|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=48.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|11|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|115|-|ns|
|Fall time|_t_f||-|15|-|ns|
|Turn-on energy|_E_on||-|0.07|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.10|-|mJ|
Rev.�1.1,��2012-11-09
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IKA08N65H5
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## High�speed�switching�series�fifth�generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=48.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|10|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|3|-|ns|
|Turn-off delaytime|_t_d(off)||-|125|-|ns|
|Fall time|_t_f||-|30|-|ns|
|Turn-on energy|_E_on||-|0.04|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.06|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=800A/µs|-|40|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.13|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-220|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=800A/µs|-|24|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.09|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-380|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=48.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|10|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|145|-|ns|
|Fall time|_t_f||-|16|-|ns|
|Turn-on energy|_E_on||-|0.11|-|mJ|
|Turn-off energy|_E_off||-|0.05|-|mJ|
|Total switchingenergy|_E_ts||-|0.16|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=48.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|10|-|ns|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|164|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.06|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.09|-|mJ|
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IKA08N65H5
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## High�speed�switching�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=800A/µs|-|55|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.28|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-145|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=800A/µs|-|42|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.20|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|8.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-220|-|A/µs|
Rev.�1.1,��2012-11-09
7
## IKA08N65H5 High speed switching series fifth generation
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**----- Start of picture text -----**<br>
35<br>a ee ||<br>ATS NIK TT<br>30<br>10 Sti<br>eS AN a<br>xEa=poPfAea TP ENaAAAAaSRersSp i= 25 \\<br>2 || tp=1µs HA Lt E 20 \<br>a Lier beri €<br>10µs pra N N a<br>50µs 15<br>GeilO 1 anil Ss ; cr P<br>fo Seat<br>100µs<br>Ss}— Pept et ro)oO \<br>200µs 10<br>> oT x .<br>ctl<br>ae 500µs nt hh lll|<br>DC 5<br>pSEl<br>im<br>0.1 0<br>1 UMTS 10 100 1000 EL 25 50 75 ET 100 [EN] 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>12 24<br>11<br>21 VGE=20V<br>10<br>18V<br>9 18<br>~t Np 12V aT 7<br>se Nit, SZ<br>8 10V<br>|oN oH<br>15<br>7 8V<br>7V<br>ie 6 SS 12<br>ep ee 6V CNY<br>5<br>O fF EN BY 9 5V I UT<br>a \/<br>BPN O<br>4<br>3 3 \ ?<br>— eS aR<br>BN 8 AW<br>3 6<br>ee \ WW<br>2<br>ee 3 er<br>1<br>a [paCnnFOX<br>0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
8
High speed switching series fifth generation IKA08N65H5
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**----- Start of picture text -----**<br>
24 24<br>Tj=25°C<br>Tj=150°C<br>21 VGE=20V 21<br>18V<br>18 18<br>z 12V 7Ty IY).: x L g<br>x 4 x<br>10V<br>in 15 ——Sff / Z| it 15 n|<br>8V<br>8© 12 7V —| AYJ y / 8© 12 ‘|<br>6V<br>nyi 9 5V STKeeei 9 ee<br>3© / NOWNX 3©<br>6 6<br>fog] Liye<br>3 3<br>| eee |<br>0 ee ee e e 0<br>AN |<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 5 6 7 8 9<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=150°C)
Figure 6. Typical ( _V_ CE=20V)
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**----- Start of picture text -----**<br>
2.25<br>IC=2A<br>IC=4A<br>ee IC=8A<br>2.00<br>100<br>es e . td(off) —————<br>Ee — 1 tf a<br>td(on)<br>e E 1.75 e = tr ee ee ee ee ee ee<br>A<br>Pre 1.50 PtP fe E EE<br>ee ET Tee<br>10<br>ra ee ee<br>= e<br>FE 1.25 re ar ae ee o e e a ee<br>Wy - a ee<br>A a ee ee ee ee<br>1.00<br>ee a Ft | | | tt<br>0.75 1<br>0 25 50 75 100 125 150 175 0 3 6 9 12 15 18 21 24<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =150°C, V CE=400V,=400V,<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
(inductive load, _T_ vj =150°C, _V_ CE=400V,=400V, _V_ GE =15/0V, _r_ G=48 Ω , Dynamic test Figure E)
9
~~High speed switching series fifth generation~~ IKA08N65H5
**==> picture [474 x 268] intentionally omitted <==**
**----- Start of picture text -----**<br>
td(off)<br>tf<br>td(on)<br>tr<br>100 pEe aeoe 100 |_Io| }_O<br>aes aee ee ee ee ee ee ee |1 ttd(off)f aa aee ee ee<br>oy a ee ee eee | td(on) a ee ee ee eee<br>tr<br>= e a eeyee = I aee ee ee ee<br>i | of | UT i Da ee ee<br>oO= ||]| | Py 2 ET<br>Zz<br>Zz oO<br>i 10 a se es ee i 10 a s s<br>>=2) p a l e ewaeeSeT >2) aaees a ee ee ee s eeee eee<br>- a ee ee ee ee ee - p e<br>a a eee a eeee<br>ee ee ee ee ee ee ee ee ee<br>| 7tet | | | ft | a<br>/<br>1 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br>
Figure 9. Typical **resistor**
_V_ GE =15/0V, _I_ C Figure E)
_T_ vj =150°C, _V_ CE=400V,
Figure 10.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =4A, _r_ G=48 ,Dynamic test circuit in E)
**==> picture [471 x 293] intentionally omitted <==**
**----- Start of picture text -----**<br>
5.5 0.8<br>typ. Eoff<br>min. Eon<br>-L 5.0 max. LI T] F |] 0.7 FILLET Ets Ie<br>‘ 4.5 E é<br>0.6<br>e e °<br>4.0<br>1 —_ 4 ae<br>0.5<br>fe) — me o . -<br>wo 3.5 ~ ws > a °<br>0.4<br>3.0<br>BE PLT PAT OS 8 a<br>0.3<br>2.5 ~ O / a<br>i ; NEE Le<br>0.2<br>2.0<br>: SOP Le eT<br>0.1<br>1.5 Lr<br>1.0 PPP [Ey)] _ 0.0 “ wo L 1 |<br>0 25 50 75 100 125 150 175 0 3 6 9 12 15 18 21 24<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.08mA)
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=48 Ω ,Dynamic test Figure E)
10
IKA08N65H5
**==> picture [475 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.200 0.200<br>Eoff Eoff<br>Eon Eon<br>0.175 Ets 0.175 Ets<br>oy oy<br>£& 0.150 £& 0.150<br>on det op)<br>o a o<br>fe) 0.125 fe) 0.125 _<br>a Lest a =<br>a ober<br>Ww 0.100 “ wv 0.100 weer -<br>Zz oot WW =<br>Ww ube ce WwZz - cess<br>Zz 0.075 Zz 0.075<br>OO<br>EE<br>0.050 0.050<br>0.025 0.025<br>0.000 0.000<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
Figure 14.
**==> picture [475 x 319] intentionally omitted <==**
**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =4A, Dynamic test circuit in I C =4A, r G=48 ,Dynamic test circuit in Figure<br>Figure E) E)<br>0.200 16<br>130V<br>520V<br>eee eee<br>0.175 14<br>0.150 Eoff 12<br>E Eon S Le<br>a Ets a“ a o 7<br>2 ‘ - <x /<br>—! 0.125 we aa 5 10 / U<br>2 ia > 7<br>4 at or r<br>uw 0.100 a = 8 y<br>Zz - kK<br>Ww a = /<br>ZzZz 0.075 = -* uy 6 / a :<br>x -F _ E<br>= 0.050 L ————s* . 4 |<br>ee 0.025 ee 2 eee<br>0.000 0<br>200 250 300 350 400 450 500 0.0 5.0 10.0 15.0 20.0 25.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=8A)
_T_ vj =150°C, _V_ GE=15/0V,
_I_ C =4A, _r_ G=48 E)
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IKA08N65H5
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1000 SSS ee a<br>M Ciss ————— IT CIN CEI TTT<br>lN C Cosrss s es ———— | TELLeaHT<br>pf il<br>p oe gs Ft eae D=0.5<br>p f td 8 Di Zaiil)<br>1 On 0.2 |<br>100 0.1<br>= ee 0.05<br>iWZ2 eeee a A 2 aCee5 AgeeCTT 0.02 A<br>0.01<br>S Po =g<br>= cI Il<br>single pulse<br>x kK<br>0.1<br>:o 10 RE rrr] EALZ CETMIaAAEITa a aUl<br>aeeee ie H C H<br>p—\ a ,) PACT PETIT TP TTT ell<br>J ~ Zz<t |FEL | a nl!ll<br>i Fe | ll<br>ee ee ee e e e LT i: 1 2 IE 3 4 TTCiaA IR; 5 TOCo=folRe 6<br>ri[K/W]: 0.5538076 0.8276154 0.4749528 0.4651059 1.652781 0.8257374<br>τ i[s]: 1.7E-4 1.1E-3 8.6E-3 0.0926713 1.371172 7.214481<br>1 0.01<br>0 5 10 15 20 25 30 1E-5 1E-4 0.001 0.01 0.1 1 10 100<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
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( V GE =0V, f=1MHz)<br>—= Bo ST OomeeretlLU<br>A,<br>eae TE HP<br>1<br>D=0.5<br>eam<br>z AL<br>xt ST 0.2 it Th<br>E on ee TI TT | | Ww<br>5 aii) maitre ean 0.1 Ss<br>2 Eo 0.05 EPL]<br>0.02<br>2ow 0.1 iaWw<br>ements 0.01 UML &<br>single pulse<br>WW aS Sees ck ~<br>F A LW<br>b SUVA LCT CUT TE TTA UT<br>im / a ee ><br>g 0.01 [ Rr Re it) a<br>ee Yoa PTI Tn TTT Tn TT i 0IT TE TTT TT Ith<br>|| i: 1 2 3 4 5 6<br>ri[K/W]: 0.9520941 1.171948 0.5287944 0.4647577 1.671981 0.8104246<br>τ i[s]: 2.1E-4 1.1E-3 8.9E-3 0.09325149 1.367755 7.182978<br>0.001 |<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100<br>t p , PULSE WIDTH [s]<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
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70<br>Tj=25°C, IF = 4A<br>65 = Tj=150°C, IF = 4A 4]<br>i Sa fl |<br>.<br>60 a cy]<br>— are<br>Ww 55 se<br>Ss<br>EPL] 50 | fppete<br>Ww<br>& YP TT<br>45<br>~ ><br>40<br>LW — =<br>UT 35 Py |) Pe RL I<br>> pe<br>a —<br>302520 P]Py | LEfy df |ELE<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
Figure 19. Diode function ( _D_ = _t_ p/T)
Figure 20. Typical of diode ( _V_ R=400V)
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0.35 14<br>Tj=25°C, IF = 4A Tj=25°C, IF = 4A<br>Tj=150°C, IF = 4A 13 Tj=150°C, IF = 4A<br>(ee | ee<br>eWw 0.30 [ I T TTTT Kktty}. 12 LE TtTT<br>inayp fleets] egia 11 LTT<br>< or<br>a =)<br>0.25 10<br>peBt) tt t e Pe EE<br>Ww> eeWi Ee’<br>Ooeeeng 0.20 ro)> 98 eee= a<br>aT Ww |e = : | |<br>uwBB 7 Lee<=<br>> i — -7 = 1 |<br>uw w > =<br>a i<br>0.15 6<br>ppt or pea<br>5<br>0.10 4<br>PTT UTE TTT T | ) E pT<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600 600 700 800 900 1000 1100 1200 1300 1400 1500 1600<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>function of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>0 27<br>Tj=25°C, IF = 4A Tj=25°C<br>Tj=150°C, IF = 4A Tj=150°C<br>Ey 24<br>-50 | UE<br>a 21<br>-100<br>_ x 18<br>=& -150 NX ia WWa<br>: Pett PL f 15 eee<br>6 \ aS %<br>-200<br>12<br>$ <<<br>{)) -250 NS] v<br>9<br>ne} .<br>PhP E |<br>-300<br>6<br>-350<br>3<br>-400 0<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Q rr I rr<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=400V)
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2.0<br>IF=4,5A<br>IF=9A<br>IF=18A<br>pe<br>1.8<br>po E T<br>eeLu 1.6 e e<br>xt<br>Kkee<br>I<br>><br>Qie 1.4 ee eee<br>m4<br>Se fe<br>=<br>° 1.2 = |<br>ee ee<br>pe<br>1.0<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
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High�speed�switching�series�fifth�generation
## PG-TO220-3-FP
15
Rev.�1.1,��2012-11-09
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High�speed�switching�series�fifth�generation
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a b<br>a b<br>**----- End of picture text -----**<br>
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Rev.�1.1,��2012-11-09
IKA08N65H5
## IKA08N65H5
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2012-11-09|Preliminarydatasheet|
## **Information**
## **Warnings**
endangered.
17
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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