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IKA08N65F5XKSA1
IGBT, 8 A, 1.6 V, 31.2 W, 650 V, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:31.2W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins; O
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 31.2W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 8A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.616 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT
High speed 5 FAST IGBT in TRENCHSTOP _ TM 5 technology copacked with RAPID 1
## IKA08N65F5
IKA08N65F5
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**----- Start of picture text -----**<br>
High speed 5 FAST IGBT in TRENCHSTOP_ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed F5 technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ 650V breakdown voltage<br>G<br>«Low Q G E<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant »<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications: a.9"/<br>* Solar converters /<br>¢ Uninterruptible power supplies<br>* Welding converters<br>* Mid to high range switching frequency converters<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKA08N65F5|650V|8A|1.6V|175°C|K08EEF5|PG-TO220-3 FP|
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IKA08N65F5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||10.8<br>6.8|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||24.0|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||24.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||12.3<br>7.3|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||24.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||31.2<br>15.6|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||4.80|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||5.60|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||65|K/W|
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=8.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=9.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.08mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=8.0A|-|17.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|500|-|pF|
|Output capacitance|_C_oes||-|16|-||
|Reverse transfer capacitance|_C_res||-|3|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=8.0A,<br>_V_GE=15V|-|22.0|-|nC|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=48.0Ω,_R_G(off)=48.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|10|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|116|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.07|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.09|-|mJ|
Rev.�2.1,��2015-05-05
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IKA08N65F5
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## High�speed�switching�series�fifth�generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=48.0Ω,_R_G(off)=48.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|9|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|3|-|ns|
|Turn-off delaytime|_t_d(off)||-|129|-|ns|
|Fall time|_t_f||-|35|-|ns|
|Turn-on energy|_E_on||-|0.04|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.06|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=800A/µs|-|41|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.14|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-160|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=800A/µs|-|27|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.10|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-300|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=48.0Ω,_R_G(off)=48.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|9|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|145|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|0.10|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.13|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=48.0Ω,_R_G(off)=48.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|9|-|ns|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|165|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.06|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.08|-|mJ|
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High�speed�switching�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=800A/µs|-|56|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.27|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-134|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=800A/µs|-|42|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.19|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-240|-|A/µs|
Rev.�2.1,��2015-05-05
7
## ~~High speed switching series fifth generation~~ IKA08N65F5
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35<br>LAN OTT<br>a CU TESiiiil 30 PE tt dl<br>10 INS | \ NUK BI<br>xE PNpf | ENT AA NTNRENTSNT 25 \<br>SPUN<br>2 tp=1µs NC 2 20 \<br>3 || HALLS PLU E \<br>| 10µs Saw a<br>50µs 15<br>Bf 1 DPTANI] 8<br>4 — 100µs Seat eT OS<br>Q= Peree 200µs a ec ro)NR 10 aN<br>) oT _ \<br>ec<br>a 500µs |<br>ee et el<br>DC 5<br>pSPATNI HHTEa EE<br>0.1 0<br>EE UN<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>12 24<br>11<br>21 VGE=20V<br>10<br>18V<br>9 18<br>~t Np 12V aT 7<br>e Nit, Ap<br>8 10V<br>Zz KR Eee<br>15<br>oe2 7 f—NeeoeZz 8V eee,[| 7<br>7V<br>a 6 SL 12 ONENW/<br>6V<br>O 5 O<br>ep fF EN BY 9 5V I UT<br>a a SZ<br>gE<br>4<br>NanPN ane<br>PN 3 : 6 \W//<br>2<br>eee omen<br>3<br>1<br>a ieFi ASan<br>0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
8
High speed switching series fifth generation IKA08N65F5
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**----- Start of picture text -----**<br>
24 24<br>Tj=25°C<br>Tj=150°C<br>21 VGE=20V 21<br>18V<br>18 18<br>x 12V 7TY).: x L g<br>4<br>: 10V<br>in 15 ——Sff / Z| it 15 o|<br>8V<br>8 12 7V TL | 8 12<br>6V<br>nyi 9 5V STKeeei 9<br>3 NOW 3<br>© NX ©<br>6 6<br>/<br>foot Liev<br>3 3<br>; |<br>| LN<br>0 eee ee ee ee 0 _-<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 5 6 7 8 9<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=150°C)
Figure 6. Typical ( _V_ CE=20V)
**==> picture [471 x 312] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.00<br>IC=2A<br>IC=4A<br>IC=8A<br>Zz: 1.75 Eee . 100 Poe |<br>ce)Ee L-- a “7 1H ttd(off)f aaoo L<br>5oe= eeOD I td(on) a ee ee ee<br>tr<br>sf<br>1.50<br>a i Da eeee<br>Beye<br>W _ L ee<br>ees 1.25 e 10 ee ee<br>fs 2 — ————<br>in a aeee<br>4 ——— — - a Pea eeee<br>1.00<br>SO SRE<br>0.75 1<br>0 25 50 75 100 125 150 175 0 3 6 9 12 15 18 21 24<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =150°C, V CE=400V,=400V,<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
(inductive load, _T_ vj =150°C, _V_ CE=400V,=400V, _V_ GE =15/0V, _r_ G=48 Ω , Dynamic test Figure E)
9
~~High speed switching series fifth generation~~ IKA08N65F5
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**----- Start of picture text -----**<br>
td(off)<br>tf<br>td(on)<br>tr<br>100 ET 100 |}<br>a ae ee ee ee ee ee H td(off) a ee ee ee<br>tf<br>ry a ee ee eee | td(on) a ee ee ee eee<br>tr<br>= e a eeyee = I aee ee ee ee<br>i | of | UT i Da ee ee<br>es {| ) | | | ye Le<br>oO oO<br>Zz nn ee al Zz<br>i 10 ]J$}—_$_}—_ = f$ —__}—_—~_ i 10 a se<br>>= a es ee ee ee eet ee > a s s ee<br>2) pewee eToe SS2) a are ee eee<br>- La ae - a es<br>a ee ee ee a eeee<br>a ee ee ee ee ee ee ee ee<br>1 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =4A,Dynamic test circuit in I C =4A, r G=48 ,Dynamic test circuit in Figure<br>Figure E) E)<br>5.5 0.8<br>typ. Eoff<br>min. Eon<br>-| 5.0 F max. l 0.7 Ets<br>Ww SA | FFE y<br>g<br>F 4.5<br>0.6<br>ee yA & 7<br>4.0<br>Q e e /<br>3 h~ _wa sw <_— . oa 0.5 7 y 4 7<br>o 3.5 as SS > / y,<br>Ww . N O / L<br>x~|\ 0.4<br>-<br>ow 3.0 “SN m™ \\ imZ 7 7<br>- NO 0.3 7 7<br>= N = ‘<br>= 2.5 ~ N O7 /\y 7<br>Bf . \ = 0.2 /\y<br>¢ 2.0 NUN 7 é oa<br>:<br>\ 0.1 Oe oT<br>1.5 PP ey) eeTt<br>1.0 0.0<br>0 25 50 75 100 125 150 175 0 3 6 9 12 15 18 21 24<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.08mA)
Figure 12.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=48 Ω ,Dynamic test Figure E)
10
IKA08N65F5
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0.200 0.200<br>Eoff Eoff<br>Eon Eon<br>0.175 Ets 0.175 Ets<br>oy oy<br>0.150 0.150<br>uw eo Ww -<br>7) a7 7) Les<br>o a 7) -<br>e) 0.125 = e) 0.125 ea<br>pa wea . a) “7<br>. —<br>a _—— w aa _ —_—<br>0.100 0.100<br>ii aa oi a tT<br>oO — oO _—<br>Zz 0.075 < Zz 0.075<br>OO<br>EE<br>== 0.050 0.050<br>nn<br>0.025 et Tt tt 0.025 a<br>0.000 0.000<br>elit ity } Ee]<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =4A, Dynamic test circuit in I C =4A, r G=48 ,Dynamic test circuit in Figure<br>Figure E) E)<br>0.200 16<br>130V<br>520V<br>PF) Eea<br>0.175 14<br>ey — Eoff “ / /<br>0.150 12<br>ie) Eon oe wi<br>Ets<br>oD a © /<br>8> 0.125 a a“ a FE_Oo 10 / /<br>oO a 2 > /<br>xa 0.100 a “ - oO Am 2 fagimE 8 /<br>) a Z = /<br>Zz 0.075 Le uy 6 an<br>5 7<br>E<br>< [-]<br>= 0.050 - ) 4 |<br>0.025 2<br>0.000 0<br>200 250 300 350 400 450 500 0.0 5.0 10.0 15.0 20.0 25.0<br>V CE COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=8A)
_T_ vj =150°C, _V_ GE=15/0V,
_I_ C =4A, _r_ G=48 E)
11
~~High speed switching series fifth generation~~ IKA08N65F5
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1000 (S| A | |<br>Ciss<br>\ EO — PUTIN ETT TTI TTT TTITee<br>N C Cosrss s =———————— a = a ZiaLeeiaT|<br>poPe ee Tl<br>dS Bape: cota D=0.5<br>a = 100 ee a fcena 1 HHLeal2ZFeeeZo HEctHEE 0.20.10.05<br>re ee a wee cil 7 Al 0.02 A<br>Zz< eea 4 ratePE UT ecect et LI |<br>0.01<br>5 SS ee es a0)<br>ns z | ao single pulse Mh<br>: im EAT 0.1<br>“. 10 Fo =e_ 2 CEYl ae aN|| a a<br>JS}agaaSS ee—__}___}_______)_a a ee=4 4 GPAY T I TCTUT TTI IT ETE TTT lll|<br>es ee eeee ee ee PE TI EUANTT TE I MN TTL T ) TTAis TOcontaireTTl l<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.5538076 0.8276154 0.4749528 0.4651059 1.652781 0.8257374<br>τ i[s]: 1.7E-4 1.1E-3 8.6E-3 0.0926713 1.371172 7.214481<br>1 0.01<br>0 5 10 15 20 25 30 1E-5 1E-4 0.001 0.01 0.1 1 10 100<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
( _V_ GE
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70<br>CT er SS<br>COC eer CCT LTT TT Tj=25°C, IF = 4A<br>— = AU ee 65 Tj=150°C, IF = 4A<br>S HT Pi<br>: pe 2a IA<br>1 60<br>D=0.5<br>Ss)2 SSeniinsest 7 StiOlate Hie oe ~<br>0.2<br>< ERS St 55 ~<br>n aii) maitre ean 0.1 ~<br>a Ut Th = SK<br>0.05<br>50<br>0.02<br>PAE ;<br>0.1<br>2 ect 0.01 MLM & 45 PP Py yyRY<br>Wwa SnCO Corn CCT CT CTT single pulse | WwW4 40 PPLE> | tf]<br>F a WW —= —<br>b SUVA LCT CUT TE TTA UT 35 Py |) f PKL<br>3 A I ia<br>g 0.01 CANIM UM LIM EN Rr Re an a<br>= STR g TTT co Se IR, Co=telR. NI 30<br>IE i: 1 eee 2 3 e 4 ee 5 ee 6 25 FP} E] EL EL LL<br>ri[K/W]: 0.9520941 1.171948 0.5287944 0.4647577 1.671981 0.8104246<br>τ i[s]: 2.1E-4 1.1E-3 8.9E-3 0.09325149 1.367755 7.182978<br>0.001 20<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100 600 700 800 900 1000 1100 1200 1300 1400 1500 1600<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 19. Diode function ( _D_ = _t_ p/T)
Figure 20. Typical of diode ( _V_ R=400V)
12
IKA08N65F5
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0.35 | 14 |<br>Tj=25°C, IF = 4A Tj=25°C, IF = 4A<br>e Tj=150°C, IF = 4A e 13 Tj=150°C, IF = 4A<br>e e eee ee<br>e 0.30 L I T TT 12<br>_ E 7<br>mm TT tty). LE TT<br>) _y—<br>aw — a 11 /<br>< —T7 —_ orw / [<br>O 3 \/<br>0.25 10<br>WwBt2QBfeeWi>e) 9 EeLe<br>0.20 8<br>orimWwWBBYi 7 Leea = ji L |<br>0.15 6<br>2ot titi ttt ttt yei fire| ttt<br>5<br>rrr rriT yy)x o-reTT<br>0.10 4<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600 600 700 800 900 1000 1100 1200 1300 1400 1500 1600<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>function of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>0 27<br>Tj=25°C, IF = 4A Tj=25°C<br>Tj=150°C, IF = 4A Tj=150°C<br>Ey 24<br>-50 | Ee<br>rya 21 i!<br>-100<br>18<br>6 > = x<br>-150<br>3 Sail | fp | pd Pa<br>a<br>5 SOS a 15<br>£ -200 SN<br>12<br>$ <<<br>E a :<br>-250<br>9<br>2 N re<br>-300<br>6<br>-350<br>3<br>-400 0<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Q rr I rr<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=400V)
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IKA08N65F5
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2.0<br>IF=4,5A<br>IF=9A<br>IF=18A<br>p e<br>1.8 e<br>eeLu 1.6 e e<br>xt<br>Kkee<br>I<br>><br>aeQ 1.4 eee<br>m4<br>Se fe<br>=<br>° 1.2 = |<br>ee ee<br>pe<br>1.0<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
14
IKA08N65F5
High�speed�switching�series�fifth�generation
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## **Package Drawing PG-TO220-3-FP**
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High�speed�switching�series�fifth�generation
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## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## IKA08N65F5
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2012-11-09|Preliminarydatasheet|
|1.2|2013-12-17|New MarkingPattern|
|2.1|2015-05-05|Final data sheet|
## **Information**
## **Warnings**
endangered.
17
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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