Image not available
Illustrative purposes only
IKA08N65ET6XKSA1
IGBT, 11 A, 1.5 V, 33 W, 650 V, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:11A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:33W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pin
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP IGBT6
- Power Dissipation: 33W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 11A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 1.09 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IKA08N65ET6
CE(sat) * Maximum junction temperature 175°C ¢ Short circuit withstand time 3us Trench and field-stop technology for 650V * very tight parameter distribution * high ruggedness, temperature stable behavior * low V CEsat and positive temperature coefficient * Low gate charge Q G ¢ Pb-free lead plating; ROHS compliant ¢ Very soft, fast recovery anti-parallel Rapid diode *« Complete product spectrum and PSpice Models: www.infineon.com/igbt
## Drives
**==> picture [100 x 252] intentionally omitted <==**
**----- Start of picture text -----**<br>
C<br>G<br>E<br>2<br>longs<br>“thy y<br>/;<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKA08N65ET6|650V|8A<br>1)|1.5V<br>2)|175°C|K08EET6|PG-TO220-3 FP|
1) Limited by maximum junction temperature. Applicable for TO-220 Standard package.
- 2) Measured under conditions specified on page 4.
Datasheet www.infineon.com
2017-11-30
IKA08N65ET6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
2
V�2.2 2017-11-30
Datasheet
IKA08N65ET6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax1)<br>_T_c=25°C<br>_T_c=100°C|_I_C||11.0<br>7.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||25.0|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||25.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax1)<br>_T_c=25°C<br>_T_c=100°C|_I_F||14.0<br>9.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||25.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤360V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||33.0<br>17.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M2.5 screw, PG-TO220-3 FP<br>Maximum of mounting processes: 3|_M_||0.5|Nm|
|IsolationvoltageRMS,_f_=50/60Hz,_t_=1min|_V_isol||2500|V|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|4.52|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|5.40|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
1) Limited by maximum junction temperature. Applicable for TO220 standard package.
3
V�2.2 2017-11-30
Datasheet
IKA08N65ET6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown<br>voltage1)|_V_(BR)CES|_V_GE=0V,_I_C=0.10mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=5.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.50<br>1.65<br>1.75|1.90<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=5.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.28<br>1.21<br>1.15|1.75<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.12mA,_V_CE=_V_GE|4.8|5.6|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>240|30<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=5.0A|-|5.5|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|480|-|pF|
|Output capacitance|_C_oes||-|29|-||
|Reverse transfer capacitance|_C_res||-|8|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=5.0A,<br>_V_GE=15V|-|17.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤360V,<br>_t_SC≤3µs<br>_T_vj=150°C|-|50|-|A|
1) Measured with filter network.
V�2.2 2017-11-30
Datasheet
4
IKA08N65ET6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,<br>_L_σ=30nH,_C_σ=150pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|59|-|ns|
|Fall time|_t_f||-|53|-|ns|
|Turn-on energy|_E_on||-|0.11|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.15|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=400A/µs|-|43|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.15|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|4.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-530|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,<br>_L_σ=30nH,_C_σ=150pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|69|-|ns|
|Fall time|_t_f||-|78|-|ns|
|Turn-on energy|_E_on||-|0.14|-|mJ|
|Turn-off energy|_E_off||-|0.07|-|mJ|
|Total switchingenergy|_E_ts||-|0.21|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=400A/µs|-|65|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.32|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-340|-|A/µs|
V�2.2 2017-11-30
Datasheet
5
IKA08N65ET6
**==> picture [474 x 679] intentionally omitted <==**
**----- Start of picture text -----**<br>
P| =i] 3530 KP Pp tt<br>10 ee<br>eee<br>2 Sete 25 \<br>6 SHI E tp = 1µs e )<br>| POP i) \<br>20<br>: || : \<br>PLLA ETHIE LEE) 15 Py INT<br>1 LAMM<br>UM N<br>8 LHe 10<br>: HE Ht) \<br>PteT TTETT| 5 Py PP IN<br>CnC EN<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 15V) ( T vj ≤ 175°C)<br>12 25<br>11<br>10<br>20<br>9<br>ON 18V 77M)<br>8<br>eFpKE,. fz 15 VGE=20V YI<br>7<br>ef oN | 15V Lf =<br>6<br>12V<br>Bf ATs We<br>5<br>2 10 10V At)<br>4 8V<br>a 7V I<br>3<br>5 6.5V<br>. 2 eee M<br>1<br>ae POT<br>0 0<br>ee ee JA N<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
6
Datasheet
2017-11-30
IKA08N65ET6
**==> picture [471 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
25 // \/ 25 | | /<br>Tvj = 25°C<br>Tvj = 150°C<br>20 eatTILsy 20 a TT /<br>VGE=20V<br>18V cbal 7<br>15V<br>g 15 TH LY g 15 /<br>é WS |) 3<br>a)o 12V ee eee oa)<br>: 10V CTT // ts<br>8V<br>£5G 10 |OYay) | 8G 10<br>: tho || 6<br>_! 7V _!<br>4 N\/ 7 4<br>6.5V }<br>°s NOK{7 :s<br>5 NIK 5<br>L W<br>0 ——LoS| [| | Tt ty tt 0 —_-” V7,<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 6 7 8 9 10 11 12 13<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=150°C)
Figure 6. Typical ( _V_ CE=50V)
**==> picture [471 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.6<br>IC = 2.5A td(off)<br>IC = 5A tf<br>IC = 10A td(on)<br>tr<br>100<br>Y5 7 a a a es ee ee<br>Ee< 2.2 “7 < SSSa eeeee<br>& ae 7 a<br>E Le £ a<br>= 1.8 O<br>Lu _— rT<br>or a O 10<br>FE = = a<br>Oo _= a a Ce<br>ou —_—— _ a<br>4 a a es<br>1.4<br>9 ee<br>1.0 1<br>0 25 50 75 100 125 150 175 2 4 6 8 10<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7.
Figure 8.
( _V_ GE=15V)
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=47 Ω , Dynamic test Figure E)
Datasheet
7
2017-11-30
IKA08N65ET6
**==> picture [474 x 696] intentionally omitted <==**
**----- Start of picture text -----**<br>
YL<br>td(off) td(off)<br>tf tf<br>td(on) td(on)<br>tr tr<br>Ep Ey<br>100<br>100<br>ry a a pe<br>& a ee eeee ee ee ee ee<br>a<br>F9 foeT)---T7 F<br>O ---7 ceeeereet O<br>i= 10 a ne eeae Ee= 10 aa esee es es<br>- es ee - es<br>a ee ee es<br>ee ae eeee<br>1 1<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor<br>(inductiveinductive loadload, T vj =150°C,150°C V CE=400V, feaeiinductive oodload,oa V CE = TOOV , V GE =15V,15V I C=5A,<br>V GE =15/0V, I C =5A,Dynamic test circuit in r G=47 ,Dynamic test circuit in Figure E)<br>Figure E)<br>6 0.4<br>typ. Eoff<br>Eon<br>=w >. = E | ts 7 a<br>g Sy Y4<br>; 5 0.3<br>aa (op)2 7 a<br>2 g a ra<br>: 4 i 0.2 a “A<br>r 2 “oO 4<br>Lu a a<br>E<br>ui=r= / a<br>HW 3 Fe 0.1 ‘ a<br>| = 20 |__ +7 |<br>cl<br>2 0.0<br>25 50 75 100 125 150 175 2 3 4 5 6 7 8 9 10<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=0.12mA) (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=47 Ω ,Dynamic test circuit in<br>Figure E)<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
8
Datasheet
2017-11-30
IKA08N65ET6
**==> picture [474 x 341] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.30 0.25<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>0.25<br>0.20<br>nm ae no ae<br>7)o 0.20 -_- nm7) --Le<br>fo)no { o _eo7 : 7<br>aa peas fo) 0.15 oT<br>25 “7L _ — aa2 = —_— _<br>w — w ae<br>WwW 0.15 WwW _—<br>z _ Zz _|-— —_—<br>Ww —_ Ww —_—<br>oOZz - — oOZz 0.10<br>OO 0.10<br>: : : | |e<br>0.05<br>0.05<br>0.00 0.00<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>(inductinductive “load, gate T resin vj =150°C, V CE=400V, (inductinductive “load,eae V CE = , alae V GE =15V, I C=5A,<br>V GE =15/0V, I C = 5A, Dynamic test circuit in r G=47 ,Dynamic test circuit in Figure E)<br>Figure E)<br>E E<br>**----- End of picture text -----**<br>
**==> picture [471 x 303] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.30 16<br>Eoff V CC<br>Eon —- V CC =520V /<br>Ets v 14<br>vy<br>0.25<br>> 7<br>12<br>a 7uw<br>0.20<br>2) an © /<br>O Y7 7 <— 10 /<br>> Y a ><br>ra Lo 4 o<br>nm 0.15 E 8 a<br>Gi y, Y -E }<br>g // 7 4 := i<br>= 7 Lu 6<br>r= 7 Za“ =<br>p 0.10 7 $<br>4<br>-7Z<br>0.05<br>an a<br>2<br>0.00 0<br>200 250 300 350 400 450 500 0 4 8 12 16 20<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 16. Typical ( _I_ C=5A)
**==> picture [91 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
T vj =150°C, V GE=15/0V,<br>**----- End of picture text -----**<br>
**==> picture [51 x 19] intentionally omitted <==**
**----- Start of picture text -----**<br>
I C =5A, r G=47<br>E)<br>**----- End of picture text -----**<br>
9
Datasheet
2017-11-30
IKA08N65ET6
**==> picture [475 x 643] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000 a a a eS PT ET<br>Ss——— a a FATEH ST TT TUT FTEcaerHEE UM it<br>[fF S Semester LUT<br>ee SITTER 1 D = 0.5<br>0.2<br>ce 100 fp}aee e e| eee| ee|) <xWwa S a7e meecH 0.1 ooo<br>a; eea“ ffTAN-<br>0.05<br>gS<br>0.1<br><x a ee ee ee ee ee = ee ee eee ee 0.02 |<br>0.01<br>o 5 as 0<br>single pulse<br><- 10 aRSee ee 2FACESAVA IMM TTT PtCCee a eT<br>a<br>a<br>po eeee 2 0.01 eee 1]<br>p es esf = (aanYT TT seatTT eei tota Re—_-— |<br>| Cies . TT CT<br>Coes<br>| Cres i ee ee ee ne 0000 0 |<br>| { | [| | | SHEE i: 1 2 3 HL 4 C= 5 wR 6 Orth 7 |<br>ri[K/W]: 0.08308 1.02865 1.00041 0.51788 0.96008 0.86136 0.06715<br>τ i[s]: 3.0E-5 3.3E-4 2.4E-3 0.02396 0.3515 2.226 15.12<br>1 0.001<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>90<br>CT Tvj = 25°C, IF = 5A<br>A TT TN tit steeerrm 1 UTI TTT Tvj = 150°C, IF = 5A<br>= 8 ea a<br>x ae a<br>1<br>epee 1 a 070ly, 0 A 75<br>D = 0.5<br>Zz RD a | cS \<br>a FARTS hm 0.2 CHT TTTT WI<br>=I mai ilx( 0.1 100 0 A -<br>0.1<br>60<br>4 MUD 0.05 IMM —& | | PSL tT<br>2Ss Sriaul wailsSet see Sete 0.02 Se et ee O Pf ff este |<br>0.01<br>fe 0.01 SA 1 0 45 ae<br>cm 0000 40 0) am —<br>single pulse<br>Ww ny | | || Ww oS<br>a eH rt a<br>Z 0.001 PAN nm Ry Rr, | # 30 PT Ty PRS<br>© VIII + } HH in t--|<br>p Tn ==<br>i: 1 2 3 4 5 6 7 8<br>ri[K/W]: 3.4E-3 0.1602 1.569 1.215 0.551 0.963 0.8606 0.0673<br>1E-4 er τ i[s]: 4.0E-6 3.0E-5 3.2E-4 2.3E-3 e 0.0236 0.35107 2.228 15.16 | ee 15 ee<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100 200 300 400 500 600 700 800 900<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>C<br>c)th(j-<br>Z<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 19. Diode function ( _D_ = _t_ p/T)
Figure 20.
( _V_ R=400V)
10
Datasheet
2017-11-30
IKA08N65ET6
**==> picture [233 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.40 es<br>Tvj = 25°C, IF = 5A<br>Tvj = 150°C, IF = 5A<br>0.35 | |<br>Lu —_——<br>fo) _4-—— _<br>7 0.30<br>3)<br>><br>or<br>Ww<br>5) 0.25<br>uw<br>owor“) 0.20<br>v<br>or<br>0.15<br>0.10<br>200 300 400 500 600 700 800 900<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 21.
( _V_ R=400V)
**==> picture [214 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 es<br>Tvj = 25°C, IF = 5A<br>Tvj = 150°C, IF = 5A<br>9<br>—+— =<br>8 a<br>7<br>/<br>7 iC<br>/<br>/<br>6 y ye<br>5 XO<br>4<br>3<br>200 300 400 500 600 700 800 900<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>**----- End of picture text -----**<br>
Figure 22.
( _V_ R=400V)
**==> picture [472 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
-200 es 25<br>Tvj = 25°C, IF = 5A<br>Tvj = 150°C, IF = 5A Tvj = 25°C<br>Oe | Tvj = 150°C /<br>-300 | | /<br>/\/<br>— ~~ 20 7<br>n ™~<br>z ~~ -<br>~ ~S <x<br>5 -400 \ 5<br>15<br>ic td<br>‘=(o} wa<br>23<br>5& -500 \ a<br>g3 gS 10 y |<br>8 -600 [>~~ —| rafs)<br>5<br>-700<br>7<br>4<br>a<br>-800 0<br>200 300 400 500 600 700 800 900 0.5 1.0 1.5 2.0 2.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=400V)
11
Datasheet
2017-11-30
IKA08N65ET6
**==> picture [233 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
1.8<br>IF = 2.5A<br>IF = 5A<br>IF = 10A<br>i | ey<br>1.6<br>g p<br>Ww<br>KkBP 1.4<br>I<br>><br>Sp<br>Qee 1.2<br>a i<br>LL<br>ee<br>1.0<br>i eee<br>|po<br>|| [|] oo<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
12
Datasheet
2017-11-30
IKA08N65ET6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Package Drawing PG-TO220-3-FP**
13
V�2.2 2017-11-30
Datasheet
IKA08N65ET6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
**==> picture [153 x 99] intentionally omitted <==**
**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
V�2.2 2017-11-30
Datasheet
IKA08N65ET6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Revision�History**
IKA08N65ET6
## **Revision:�2017-11-30,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2017-09-11|Final Datasheet|
|2.2|2017-11-30|New Gfs Value at VCE=20V|
15
V�2.2 2017-11-30
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →