Image not available
Illustrative purposes only
IHW50N65R5XKSA1
IGBT, 80 A, 1.35 V, 282 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:282W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 282W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.14 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
# IHW50N65R5
IHW50N65R5
## **Features:**
**==> picture [221 x 128] intentionally omitted <==**
**----- Start of picture text -----**<br>
voltage<br>* TRENCHSTOP TM _ technology offers:<br>- very tight parameter distribution<br>- high ruggedness and stable temperature behavior<br>- very low V CEsat and low E off<br>- easy parallel switching capability due to positive<br>temperature coefficient in V CEsat<br>« Low EMI<br>* Qualified according to JESD-022 for target<br>¢ Pb-free lead plating; ROHS compliant<br>« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>**----- End of picture text -----**<br>
## **Applications:**
**==> picture [103 x 254] intentionally omitted <==**
**----- Start of picture text -----**<br>
C<br>G<br>E<br>=<br>fale<br>re Mineo,<br>y<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW50N65R5|650V|50A|1.35V|175°C|H50ER5|PG-TO247-3|
2
IHW50N65R5
**==> picture [146 x 65] intentionally omitted <==**
## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3
Rev.�2.4,��2015-12-18
IHW50N65R5
Resonant�Switching�Series
**==> picture [146 x 65] intentionally omitted <==**
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_C||80.0<br>50.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||150.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||150.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||37.0<br>22.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||150.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||282.0<br>141.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.53|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||2.29|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.4,��2015-12-18
4
IHW50N65R5
Resonant�Switching�Series
**==> picture [146 x 65] intentionally omitted <==**
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.35<br>1.60|1.70<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=50.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.70<br>2.00|2.10<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1250|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|120.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|6140|-|pF|
|Output capacitance|_C_oes||-|55|-||
|Reverse transfer capacitance|_C_res||-|23|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=50.0A,<br>_V_GE=15V|-|230.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=45nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|30|-|ns|
|Rise time|_t_r||-|20|-|ns|
|Turn-off delaytime|_t_d(off)||-|210|-|ns|
|Fall time|_t_f||-|8|-|ns|
|Turn-on energy|_E_on||-|1.50|-|mJ|
|Turn-off energy|_E_off||-|0.45|-|mJ|
|Total switchingenergy|_E_ts||-|1.95|-|mJ|
Rev.�2.4,��2015-12-18
5
IHW50N65R5
**==> picture [146 x 65] intentionally omitted <==**
## Resonant�Switching�Series
## **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=50.0A,<br>_di_F_/dt_=1100A/µs|-|137|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|2.75|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|37.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1100|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=45nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|29|-|ns|
|Rise time|_t_r||-|22|-|ns|
|Turn-off delaytime|_t_d(off)||-|240|-|ns|
|Fall time|_t_f||-|21|-|ns|
|Turn-on energy|_E_on||-|1.76|-|mJ|
|Turn-off energy|_E_off||-|0.73|-|mJ|
|Total switchingenergy|_E_ts||-|2.49|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=50.0A,<br>_di_F_/dt_=1100A/µs|-|145|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|5.45|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|60.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-2050|-|A/µs|
6
Rev.�2.4,��2015-12-18
IHW50N65R5
**==> picture [474 x 312] intentionally omitted <==**
**----- Start of picture text -----**<br>
280<br>Ee ool<br>100 ieee<br>240<br>ttt tt| \<br>en eee ein<br>not for linear use<br>as = Neen<br>200<br>= | LI T r i TTTm = \<br>10 COMET z<br>IETF 160 SX]<br>ad a<br>SB|a ff ee in 120 Pf PN]\\<br>1<br>80<br>¢ COMIC é | | | LN |<br>es EHHPtceTTT eeETTHHeaeee 40 Pf Pt IN\<br>0.1 0<br>1 Crnc 10 100 1000 25 |_| 50 75 EE 100 [LN] 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C, V GE =15V, t p=1µs) temperature<br>( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br>
**==> picture [472 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
90 150<br>VGE = 20V<br>140<br>80 TTT] Sr 17V<br>130<br>|<br>15V<br>70 N ee 120 es ooee<br>110 13V<br>ef 60 \ds 100 11V Same<br>: \ ee)<br>90 9V<br>50<br>2PD UING. Eb=e 80 Eeeee 8V ee ||<br>sf 40 | A fs 70 Peo 7V<br>60<br>6V<br>ef Ns EEN<br>: 30 \ Sf] 50 oNIf<br>40<br>se ee! ee<br>20<br>30<br>. ee) See<br>20<br>10 eee eee Ae<br>10<br>PN EARiAne<br>0 0<br>25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
Figure 4. Typical ( _T_ vj=25°C)
7
IHW50N65R5
**==> picture [469 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
150 150<br>VGE = 20V 140 T vj<br>135 17V AIT ( T vj Ezal<br>Se h/ a rse<br>130<br>15V<br>=== /A a<br>120 13V 120<br>: 11V S HILAS. 2 110 A E<br>105 9V<br>100<br>8V<br>pe | Sey |:<br>90 90<br>7V<br>6V 80<br>75<br>3 | 5V Yd 8 70<br>60 60<br>SERW Aeel Oo 50 eeeeeee<br>Oo | AY : i<br>45<br>gs 40 ee<br>8 ae Coan ee<br>30 30<br>20<br>15<br>10<br>0 eeae)yo xNTA608 0 PotcesstT |es| llyee<br>en ee e ee<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 2 3 4 5 6 7 8<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=175°C)
Figure 6. Typical ( _V_ CE=20V)
**==> picture [474 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.00 a 1000 a Se<br>I C<br>I C<br>1.75 I C<br>S ——- =25A Ee<br>--- =50A ee<br>2 7 — td(off) — ———<br>1.50<br>tf<br>td(on)<br>100 tr<br>poe Te |e ( Eo<br>1.25<br>s —— ——<br>a So<br>1.00<br>- g e e<br>pf 0.75 PT Pop 20 opey<br>© = 10 eea ce<br>0.50<br>O a es<br>rr 0.25 ————————<br>0.00 1<br>0 PP 25 [ee}] 50 75 100 125 150 175 0 20 40 60 80 100<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =175°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=8 Ω , _R_ G(off)=8 Ω , test circuit in Figure E)
8
IHW50N65R5
**==> picture [474 x 331] intentionally omitted <==**
**----- Start of picture text -----**<br>
1E+4 1000<br>H td(off) EE|Cs td(off) a<br>I tf tf<br>| td(on) Ee es | td(on) a eeee<br>| tr pp | tr a ee ee ee<br>itt | ee eeeee<br>=c 1000 po = = c 100 e ee<br>Ss |4<br>a eo ee<br>100<br>9 a aee ee po ld<br>a<br>QO a eae ae LE —-|—<br>= a a ee ce ee ee ee = ae<br>10<br>s 10 osee>_> —_— eee - esSSaass<br>a—— a a<br>————<br>1 1<br>PTT TrTryryy LT|<br>0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistance junction temperature<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,<br>V GE =0/15V, I C =50A, dynamic test circuit in I C =50A, R G(on)=8 Ω , R G(off)=8 Ω , dynamic test<br>Figure E) circuit in Figure E)<br>t t<br>**----- End of picture text -----**<br>
**==> picture [474 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
6.0 7<br>typ.<br>min.<br>5.5<br>max.<br>Ww 6<br>oe 5.0 e e ee 7<br>Eoff<br>g> 4.5 [ oeew op) 5 EEonts /<br>O ~S| tg2 IE 4 é<br>fa Ww 7<br>ee ee |<br>So) 4.0 | “ys a /<br>4<br>Bo] oS 8 |<br>xe 3.5 — SAL*~ x JL/ 4 4<br>3<br>[oe~~<br>3.0<br>WW | OK | a<br>| _| hw oS) / ‘ W4<br>fo<br>2.5<br>ul UN 2 aa<br>Lu —_—s ~ ~sN. R= 7 “oy a<br>Bf 2.0 ran<br>1<br>ie 1.5 ee Zo<br>a<br>ee ee<br>1.0 0<br>0 25 50 75 100 125 150 0 20 40 60 80 100<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.5mA)
Figure 12.
(inductive load, _T_ vj =175°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=8 Ω , _R_ G(off)=8 Ω , test circuit in Figure E)
9
IHW50N65R5
**==> picture [474 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
6.0 2.50<br>Eoff<br>5.5 2.25 Eon<br>Ets<br>Pt tt | tt Le FE | ee<br>5.0<br>yg P PP7 a 2.00 af ao er TT<br>4.5 Eoff<br>Eon<br>Wwep)ZBoo 4.0 EF Ets J ]erfove y z2Ww”o 1.75 _ | _ =><br>_gS P ppA _é 1.50 Lee_—_——<br>5a 3.53.0 ee/ ee-| & 1.25<br>pop 7 —T<br>2.5<br>1.00<br>e yet< er taeoO tT |<br>: 2.0 fee<br>e eae 0.75 eee<br>[ at<br>1.5<br>3 | [eer | |g ———<br>= S| |<br>0.50<br>f 1.0 — e<br>Part 0.25<br>0.5<br>| | | tt<br>0.0 0.00<br>0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
**==> picture [151 x 28] intentionally omitted <==**
**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V CE=400V,<br>V GE =0/15V, I C =50A, dynamictest<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 14.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =50A, _R_ G(on)=8 Ω , _R_ G(off)=8 Ω , dynamic circuit in Figure E)
**==> picture [471 x 303] intentionally omitted <==**
**----- Start of picture text -----**<br>
20 1E+4<br>— V CC = 130V a(eeea ee ee<br>18 V CC A ee eeee<br>YZ ee ee ee<br>a 0 a De<br>16<br>Cies<br>Coes<br>14 Cres<br>eA).oO4 Y —_ ea e<br>ro)a 12 y), Ww& 1000 aa a asea<br>> O aee<br>10<br>WWEGS J, 4808) e F@ e ssossese<br>COA? See<br>8<br>i / SN<br>100<br>P L IES a ~<br>Oo 6 fF poNeBBR<br>- a a<br>4 T oe ===<br>2 e e a ee ee<br>0 10<br>0 50 100 150 200 250 300 350 0 3 6 9 12 15 18 21 24 27 30<br>Q G , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=50A) collector-emitter voltage<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
**==> picture [61 x 28] intentionally omitted <==**
**----- Start of picture text -----**<br>
Figure 16.<br>( V GE<br>**----- End of picture text -----**<br>
10
IHW50N65R5
**==> picture [481 x 237] intentionally omitted <==**
**----- Start of picture text -----**<br>
WwO EZBUNApe VW D = 0.5 Lu=O 1 oo e eee e e|e ee D = 0.5 eeBa l<br>oe 2a So EHS A n_H<br>2 Huff 0.2 2 Et A 0.2 mall<br>0.1 0.1<br>a Ws | a PT eer<br>0.05 0.05<br>tu Wa ig Wl m1 2 all<br>: 0.1 LA 0.02 2 FUTemer 0.02<br>a TT<br>=a EHena/c)ornare/ 0.01 ioc = peweYY alate 0.01 mail|<br>= A)72 single pulse | WH s single pulse<br>F V4 || / | gf<br>0.1<br>_ ett— Ly LeAU TIT)A = C—OTY Pall)eer eeeaaaooo<br>ZWlD ysFo 9.)AK a 2Wl ee[ieeart<br>SILAy WW O VY AL L IN )| 0Ae a op HE tHcl<br>< sii WYK --|i] s ll) *_ Ill<br>eT. AA Ge | 2 ego Ge<br>i: 1 2 3 4 i: 1 2 3 4 5<br>ri[K/W]: 0.1509923 0.1847515 0.1958118 6.0E-3 ri[K/W]: 0.7038717 1.0081 0.3567227 0.2177746 8.5E-3<br>| Wf τ i[s]: 2.0E-4 3.3E-3 “Thm 0.0146925 0.2126033 co) LU E τ i[s]: 1.4E-4 LE 3.7E-4 3.4E-3 oi 0.01523878 rol 0.2085516<br>|| ae| 7/ACUI | A LU ||<br>0.01 0.01<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1E-6 1E-5 1E-4 0.001 0.01<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
> Figure 17. IGBT function ( _D_ = _t_ p/T)
Figure 18. Diode function ( _D_ = _t_ p/T)
**==> picture [235 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
250 LS |<br>T vj I F<br>—- T vj =175°C, I F =50A<br>225 YESS]<br>2 200 |<br>pi. N\\<br>FE% 175 »~ ~‘<br>th<br>5 NS<br>O 150<br>pio NTE<br>125<br>:<br>pt Sqjg<br>aPEEP 100 LN<br>75<br>50<br>500 600 700 800 900 1000 1100 1200 1300<br>dI F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
Figure 19. Typical of diode ( _V_ R=400V)
**==> picture [235 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
7 ss<br>T vj I F<br>—- T vj =175°C, I F =50A<br>EZ 7.<br>6 -<br>Ww a<br>5<br>+ aT ~<br>SU 4<br>i<br>><br>fe)<br>a 3 =——<br>2 fit a7<br>Eee<br>*§ EEE<br>Ww 1<br>Ee<br>0<br>500 600 700 800 900 1000 1100 1200 1300<br>dI F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 20.
( _V_ R=400V)
11
IHW50N65R5
**==> picture [248 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
70<br>W<br>T vj I F<br>=n—- T vj =175°C, I F =50A S 7<br>60<br><< ee Yo enn<br>5<br>50<br>i Z fe)<br>):> 40 7“ 2rhrh<br>éeae Zo eae4 LL<br>30<br>: aseer<br>rd ——— Eer.r.<br>gf 20 aet<br>Ww Ww<br>ow ra)<br>10<br>PEELE)<br>0<br>500 600 700 800 900 1000 1100 1200 1300<br>dI F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
**==> picture [236 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
0<br>Ss<br>T vj I F<br>-300 Es—- T vj =175°C, I F =50A a]<br>x,oe -600 ee ><br>| Te<br>fe) -900 \ aS<br>-1200<br>2rhrh fo [NK] \ \<br>LL<br>-1500<br>EIN NAN<br>SON<br>Eer.r. -1800 ft INN<br>-2100<br>etaet ttt TIN fh<br>Ww<br>ra) -2400 \<br>Pitt<br>-2700<br>Gee|<br>-3000<br>500 600 700 800 900 1000 1100 1200 1300<br>dI F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 21. Typical function ( _V_ R=400V)
Figure 22.
( _V_ R=400V)
**==> picture [474 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
150 Ld 2.50 a<br>T vj I F<br>135 E—- T vj =175°C sl] —-E I F s =25A<br>2.25 I F<br>120<br>To o t ey 2.00 Py<br>< 105 Pit A =<br>pe / Ss eee<br>1.75<br>ZzWW 90 {isy/ 80) Lee—<br>et / x<br>oOD> ye >oOys Fe<br>e 75 Q 1.50 _—<br>/ <x<br>= ? 60 | f =Ty<br>%ee © 1.25<br>45<br>1.00<br>30<br>ee ae 0.75 PPri tt t<br>TIA<br>15<br>PIy7<br>0 0.50<br>tT ety LL<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
12
IHW50N65R5
Resonant�Switching�Series
**==> picture [146 x 65] intentionally omitted <==**
## **Package Drawing PG-TO247-3**
13
Rev.�2.4,��2015-12-18
IHW50N65R5
Resonant�Switching�Series
**==> picture [146 x 65] intentionally omitted <==**
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
**==> picture [153 x 99] intentionally omitted <==**
**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
Rev.�2.4,��2015-12-18
IHW50N65R5
## IHW50N65R5
|Previous Revision|Previous Revision|Previous Revision||
|---|---|---|---|
|Revision||Date|Subjects(major changes since last revision)|
|1.1||2014-06-13|Preliminarydata sheet|
|1.2||2014-06-16|-|
|2.1||2014-09-12|Final data sheet|
|2.2||2014-11-27|Update of diode forward current values|
|2.3<br>2.4|2014-12-16<br>2015-12-18<br>~~|ss: [Update~~||_E_on _E_off<br>Minor change Conditions Static Characteristic<br>~~[Update Fig.14.,~~<br>~~at 25°C~~|
## party.
## **Warnings**
15
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →