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IHW40N65R6XKSA1
IGBT, 83 A, 1.29 V, 210 W, 650 V, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 210W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 83A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.29V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.3 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**IHW40N65R6 Reverse-Conducting IGBT** _ ## **Reverse-Conducting IGBT with monolithic body diode** ## **Features** - Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ - Easy parallel switching capability due to positive temperature coefficient in VCEsat - High ruggedness and stable temperature behavior - Low EMI - Pb-free lead plating; RoHS compliant - Powerful monolithic reverse-conducting diode with low forward voltage - Very low VCEsat and low Eoff - Very tight parameter distribution ## **Potential applications** **==> picture [41 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>C<br>E<br>**----- End of picture text -----**<br> - Induction Cooking - Microwave Ovens ## **Product validation** - Product Validation: Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 ## **Description** **==> picture [135 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>**----- End of picture text -----**<br> |**Type**|**Package**|**Marking**| |---|---|---| |IHW40N65R6|PG-TO247-3|H40ER6| Please read the Important Notice and Warnings at the end of this document Datasheet **www.infineon.com** Revision 1.20 2021-03-22 **IHW40N65R6 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5| |**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**5**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13| |**6**|**Testing conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16| Datasheet Revision 1.20 2021-03-22 2 **IHW40N65R6 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||||| |---|---|---|---|---|---|---| |**Table 1**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Internal emitter inductance<br>measured 5mm. (0.197in)<br>from case|_L_E|||13.0||nH| |Storage temperature|_T_stg||-55||150|°C| |Soldering temperature||wave soldering 1.6mm (0.063in.) from case<br>for 10s|||260|°C| |Mounting torque , M3 screw<br>Maximum of mounting<br>process: 3|_M_||||0.6|Nm| |Thermal resistance,<br>junction-ambient|_R_th(j-a)||||40|K/W| ## **2 IGBT** ## **Table 2 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CE|_T_vj≥ 25 °C||650|V| |DC collector current, limited<br>by Tvjmax|_I_C||_T_C= 25 °C|83|A| ||||_T_C= 100 °C|54|| |Pulsed collector current, tp<br>limited by Tvjmax|_I_Cpuls|||120|A| |Turn-of safe operating area||_V_CE≤ 650 V,_t_P≤ 1 µs,_T_vj≤ 175 °C||120|A| |Gate-emitter voltage|_V_GE|||±20|V| |Transient gate-emitter<br>voltage|_V_GE|_t_p= 10 µs,_D_< 0.010||±30|V| |Power dissipation|_P_tot||_T_C= 25 °C|210|W| ||||_T_C= 100 °C|105|| **Table 3 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter breakdown<br>voltage|_V_BRCES|_I_C= 0.2 mA,_V_GE= 0 V||650|||V| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 40.0 A,_V_GE= 15 V|_T_vj= 25 °C||1.29|1.60|V| ||||_T_vj= 175 °C||1.50||| Datasheet Revision 1.20 2021-03-22 3 **IHW40N65R6 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT** |**Table 3**<br>**Characteristic values (continued)**|**Table 3**<br>**Characteristic values (continued)**|**Table 3**<br>**Characteristic values (continued)**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Gate-emitter threshold<br>voltage|_V_GEth|_I_C= 0.40 mA, VCE= VGE||3.20|4.00|4.80|V| |Zero gate voltage collector<br>current|_I_CES|_V_CE= 650 V,_V_GE= 0 V|_T_vj= 25 °C|||40|µA| ||||_T_vj= 175 °C||1000||| |Gate-emitter leakage current|_I_GES|_V_CE= 0 V,_V_GE= 20 V||||100|nA| |Transconductance|_g_fs|_I_C= 40.0 A,_V_CE= 20 V|||97.0||S| |Input capacitance|_C_ies|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||4029||pF| |Output capacitance|_C_oes|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||42||pF| |Reverse transfer capacitance|_C_res|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||16||pF| |Gate charge|_Q_G|_I_C= 40.0 A,_V_GE= 15 V,_V_CE|= 520 V||159||nC| |Turn-on delay time|_t_don|_V_CE= 400 V,_V_GE= 15 V,<br>_R_Gon= 10.0 Ω,<br>_R_Gof= 10.0 Ω,<br>_L_σ= 70 nH,_C_σ= 30 pF|_T_vj= 25 °C,<br>_I_C= 40.0 A||17||ns| ||||_T_vj= 175 °C,<br>_I_C= 40.0 A||17||| |Rise time (inductive load)|_t_r|_V_CE= 400 V,_V_GE= 15 V,<br>_R_Gon= 10.0 Ω,<br>_R_Gof= 10.0 Ω,<br>_L_σ= 70 nH,_C_σ= 30 pF|_T_vj= 25 °C,<br>_I_C= 40.0 A||19||ns| ||||_T_vj= 175 °C,<br>_I_C= 40.0 A||19||| |Turn-of delay time|_t_dof|_V_CE= 400 V,_V_GE= 15 V,<br>_R_Gon= 10.0 Ω,<br>_R_Gof= 10.0 Ω,<br>_L_σ= 70 nH,_C_σ= 30 pF|_T_vj= 25 °C,<br>_I_C= 40.0 A||211||ns| ||||_T_vj= 175 °C,<br>_I_C= 40.0 A||236||| |Fall time (inductive load)|_t_f|_V_CE= 400 V,_V_GE= 15 V,<br>_R_Gon= 10.0 Ω,<br>_R_Gof= 10.0 Ω,<br>_L_σ= 70 nH,_C_σ= 30 pF|_T_vj= 25 °C,<br>_I_C= 40.0 A||15||ns| ||||_T_vj= 175 °C,<br>_I_C= 40.0 A||20||| |Turn-on energy|_E_on|_V_CE= 400 V,_V_GE= 15 V,<br>_R_Gon= 10.0 Ω,<br>_R_Gof= 10.0 Ω,<br>_L_σ= 70 nH,_C_σ= 30 pF|_T_vj= 25 °C,<br>_I_C= 40.0 A||1.10||mJ| ||||_T_vj= 175 °C,<br>_I_C= 40.0 A||1.27||| |Turn-of energy|_E_of|_V_CE= 400 V,_V_GE= 15 V,<br>_R_Gon= 10.0 Ω,<br>_R_Gof= 10.0 Ω,<br>_L_σ= 70 nH,_C_σ= 30 pF|_T_vj= 25 °C,<br>_I_C= 40.0 A||0.42||mJ| ||||_T_vj= 175 °C,<br>_I_C= 40.0 A||0.61||| Datasheet Revision 1.20 2021-03-22 4 **IHW40N65R6 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** |**Table 3**<br>**Characteristic values (continued)**|**Table 3**<br>**Characteristic values (continued)**|**Table 3**<br>**Characteristic values (continued)**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Total switching energy|_E_ts|_V_CE= 400 V,_V_GE= 15 V,<br>_R_Gon= 10.0 Ω,<br>_R_Gof= 10.0 Ω,<br>_L_σ= 70 nH,_C_σ= 30 pF|_T_vj= 25 °C,<br>_I_C= 40.0 A||1.52||mJ| ||||_T_vj= 175 °C,<br>_I_C= 40.0 A||1.88||| |Sof turn-of energy|_E_of|_V_CE= 162 V,_V_GE= 15 V,<br>_R_Gon= 10.0 Ω,<br>_R_Gof= 10.0 Ω,_C_r= 30 nF,<br>_L_σ= 70 nH,_C_σ= 30 pF|_T_vj= 25 °C,<br>_I_C= 40.0 A||0.11||mJ| ||||_T_vj= 175 °C,<br>_I_C= 40.0 A||0.22||| |IGBT thermal resistance,<br>junction-case|_R_thjc|||||0.71|K/W| |Operating junction<br>temperature|_T_vj|||-40||175|°C| ## **3 Diode** **Table 4 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |---|---|---|---|---|---| |Repetitive peak reverse<br>voltage|_V_RRM|_T_vj≥ 25 °C||650|V| |Diode forward current,<br>limited by Tvjmax|_I_F||_T_C= 25 °C|35|A| ||||_T_C= 100 °C|21|| |Diode pulsed current,<br>limited by Tvjmax|_I_Fpuls|||120|A| |Power dissipation|_P_tot||_T_C= 25 °C|54|W| ||||_T_C= 100 °C|27|| **Table 5 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Diode forward voltage|_V_F|_I_F= 40.0 A|_T_vj= 25 °C||1.50|1.90|V| ||||_T_vj= 175 °C||1.66||| |Reverse leakage current|_I_R|_V_R= 650 V|_T_vj= 25 °C|||40|µA| ||||_T_vj= 175 °C||1000||| Datasheet Revision 1.20 2021-03-22 5 **IHW40N65R6 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** |**Table 5**<br>**Characteristic values (continued)**|**Table 5**<br>**Characteristic values (continued)**|**Table 5**<br>**Characteristic values (continued)**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Diode reverse recovery time|_t_rr|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 40.0 A,<br>_-di_F_/dt_= 1000 A/µs||99||ns| ||||_T_vj= 175 °C,<br>_I_F= 40.0 A,<br>_-di_F_/dt_= 1000 A/µs||133||| |Diode reverse recovery<br>charge|_Q_rr|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 40.0 A,<br>_-di_F_/dt_= 1000 A/µs||2.16||µC| ||||_T_vj= 175 °C,<br>_I_F= 40.0 A,<br>_-di_F_/dt_= 1000 A/µs||3.77||| |Diode peak reverse recovery<br>current|_I_rrm|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 40.0 A,<br>_-di_F_/dt_= 1000 A/µs||35.0||A| ||||_T_vj= 175 °C,<br>_I_F= 40.0 A,<br>_-di_F_/dt_= 1000 A/µs||46.0||| |Diode peak rate of fall of<br>reverse recovery current|_dI_rr_/dt_|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 40.0 A,<br>_-di_F_/dt_= 1000 A/µs||-926||A/µs| ||||_T_vj= 175 °C,<br>_I_F= 40.0 A,<br>_-di_F_/dt_= 1000 A/µs||-901||| |Diode thermal resistance,<br>junction-case|_R_thjc|||||2.77|K/W| |Operating junction<br>temperature|_T_vj|||-40||175|°C| Datasheet Revision 1.20 2021-03-22 6 **IHW40N65R6 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **4 Characteristics diagrams** **Power dissipation as a function of case temperature, IGBT** Ptot = f(Tc) T ≤175 °C vj **Collector current as a function of case temperature, IGBT** IC = f(Tc) Tvj≤175 °C, VGE = 15 V **==> picture [539 x 311] intentionally omitted <==** **----- Start of picture text -----**<br> 210 90<br>80<br>180<br>70<br>150<br>60<br>120<br>50<br>40<br>90<br>30<br>60<br>20<br>30<br>10<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>Typical output characteristic, IGBT Typical output characteristic, IGBT<br>IC = f(VCE) IC = f(VCE)<br>T = 25 °C T = 175 °C<br>vj vj<br>**----- End of picture text -----**<br> **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 120 120<br>100 100<br>80 80<br>60 60<br>40 40<br>20 20<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.20 2021-03-22 7 **IHW40N65R6 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical transfer characteristic, IGBT** IC = f(VGE) ## VCE = 20 V **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>100<br>80<br>60<br>40<br>20<br>0<br>2 3 4 5 6 7 8<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of collector current, IGBT** ## t = f(IC) RGoff = 10.0 Ω, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RGon = 10.0 Ω **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0 20 40 60 80 100 120<br>**----- End of picture text -----**<br> ## **Typical collector-emitter saturation voltage as a function of junction temperature, IGBT** ## VCEsat = f(Tvj) VGE = 15 V **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 2.00<br>1.75<br>1.50<br>1.25<br>1.00<br>0.75<br>0.50<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of gate resistor, IGBT** t = f(RG) IC = 40.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0 10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br> Datasheet Revision 1.20 2021-03-22 8 **IHW40N65R6 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching times as a function of junction temperature, IGBT** t = f(Tvj) IC = 40.0 A, RGoff = 10.0 Ω, VCE = 400 V, VGE = 0/15 V, RGon = 10.0 Ω ## **Gate-emitter threshold voltage as a function of junction temperature, IGBT** VGEth = f(Tvj) IC = 0.40 mA **==> picture [539 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 6<br>5<br>100 4<br>3<br>10 2<br>1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>Typical switching energy losses as a function of Typical switching energy losses as a function of gate<br>collector current, IGBT resistor, IGBT<br>E = f(IC) E = f(RG)<br>RGoff = 10.0 Ω, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RGon = IC = 40.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V<br>10.0 Ω<br>9 5.0<br>8 4.5<br>4.0<br>7<br>3.5<br>6<br>3.0<br>5<br>2.5<br>4<br>2.0<br>3<br>1.5<br>2<br>1.0<br>1 0.5<br>0 0.0<br>0 20 40 60 80 100 120 0 10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br> Datasheet Revision 1.20 2021-03-22 9 **IHW40N65R6 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching energy losses as a function of junction temperature, IGBT** E = f(Tvj) IC = 40.0 A, RGoff = 10.0 Ω, VCE = 400 V, VGE = 0/15 V, RGon = 10.0 Ω **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 2.50<br>2.25<br>2.00<br>1.75<br>1.50<br>1.25<br>1.00<br>0.75<br>0.50<br>0.25<br>0.00<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical gate charge, IGBT** VGE = f(QGE) IC = 40.0 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 20 40 60 80 100 120 140 160<br>**----- End of picture text -----**<br> ## **Typical soft-switching turn-off energy loss as a function of collector current, IGBT** E = f(IC) RGoff = 10.0 Ω, Tvj = 175 °C, VGE = 0/15 V **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>0 10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br> **Typical capacitance as a function of collector-emitter voltage, IGBT** C = f(VCE) f = 100 kHz, VGE = 0 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>1<br>0 5 10 15 20 25 30<br>**----- End of picture text -----**<br> Datasheet Revision 1.20 2021-03-22 10 **IHW40N65R6 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **IGBT transient thermal resistance, IGBT** Zth = f(tp) ## **Diode transient thermal impedance as a function of pulse width, Diode** **==> picture [539 x 614] intentionally omitted <==** **----- Start of picture text -----**<br> D = tp/T Zth = f(tp)<br>D = tp/T<br>1<br>1<br>0.1<br>0.1<br>0.01<br>0.01<br>0.001<br>0.0001 0.001<br>1E-7 1E-6 1E-5 0.0001 0.001 0.01 0.1 1E-7 1E-6 1E-5 0.0001 0.001 0.01 0.1<br>Typical reverse recovery time as a function of diode Typical reverse recovery charge as a function of diode<br>current slope, Diode current slope, Diode<br>trr = f(diF/dt) Qrr = f(diF/dt)<br>VR = 400 V, IF = 40.0 A VR = 400 V, IF = 40.0 A<br>300 5.0<br>4.5<br>250<br>4.0<br>3.5<br>200<br>3.0<br>150 2.5<br>2.0<br>100<br>1.5<br>1.0<br>50<br>0.5<br>0 0.0<br>500 600 700 800 900 1000 1100 1200 1300 500 600 700 800 900 1000 1100 1200 1300<br>**----- End of picture text -----**<br> Datasheet Revision 1.20 2021-03-22 11 **IHW40N65R6 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **Typical reverse recovery current as a function of diode current slope, Diode** Irr = f(diF/dt) VR = 400 V, IF = 40.0 A **Typical diode peak rate of fall of reverse recovery current as a function of diode current slope, Diode** dIrr/dt = f(diF/dt) IF = 40.0 A, VR = 400 V **==> picture [539 x 569] intentionally omitted <==** **----- Start of picture text -----**<br> 60 0<br>-200<br>50<br>-400<br>40<br>-600<br>-800<br>30<br>-1000<br>20<br>-1200<br>10 -1400<br>500 600 700 800 900 1000 1100 1200 1300 500 600 700 800 900 1000 1100 1200 1300<br>Typical diode forward current as a function of forward Typical diode forward voltage as a function of<br>voltage, Diode junction temperature, Diode<br>IF = f(VF) VF = f(Tvj)<br>120 2.00<br>100 1.75<br>80 1.50<br>60 1.25<br>40 1.00<br>20 0.75<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.20 2021-03-22 12 **IHW40N65R6 Reverse-Conducting IGBT** **5 Package outlines** **5 Package outlines** **==> picture [105 x 47] intentionally omitted <==** **==> picture [190 x 13] intentionally omitted <==** **----- Start of picture text -----**<br> Package Drawing PG-TO247-3<br>**----- End of picture text -----**<br> **==> picture [397 x 364] intentionally omitted <==** **==> picture [262 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 4.70 5.30<br>A1 2.20 2.60<br>A2 1.50 2.50<br>b 1.00 1.40<br>b1 1.60 2.41 DOCUMENT NO.<br>b2 2.57 3.43 Z8B00003327<br>c 0.38 0.89 REVISION<br>D 20.70 21.50 06<br>D1 13.08 17.65<br>D2 0.51 1.35 SCALE 3:1<br>E 15.50 16.30 0 1 2 3 4 5mm<br>E1 12.38 14.15<br>E2 3.40 5.10<br>E3 1.00 2.60 EUROPEAN PROJECTION<br>e 5.44<br>L 19.80 20.40<br>L1 3.85 4.50<br>P 3.50 3.70<br>Q 5.35 6.25 ISSUE DATE<br>S 6.04 6.30 25.07.2018<br>**----- End of picture text -----**<br> **Figure 6** Datasheet Revision 1.20 2021-03-22 13 **IHW40N65R6 Reverse-Conducting IGBT** **6 Testing conditions** **6** **==> picture [105 x 47] intentionally omitted <==** ## **Testing conditions** **==> picture [463 x 565] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>Figure D.<br>10% V GE<br>t<br>I C (t)<br>CC<br>2% I C t<br>V CE (t) Figure E. Dynamic test circuit<br>Parasitic inductance Ls,<br>parasitic capacitor Cs,<br>relief capacitor C ,r<br>t 2 t 4 (only for ZVT switching)<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> ## **Figure 7** Datasheet Revision 1.20 2021-03-22 14 **IHW40N65R6 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** ## **Revision history** |**Revision history**||| |---|---|---| |**Revision**|**Date of release**|**Description of changes**| |1.00|2020.12.21|Final datasheet| |1.10|2021.02.22|Sof turn-of energy data changed. Editorial changes in graph.| |1.20|2021.03.21|Dynamic characteristic change from 1000 kHz to 100 kHz| Datasheet Revision 1.20 2021-03-22 15 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2021-03-22 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2021 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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