Image not available
Illustrative purposes only
IHW40N65R5XKSA1
IGBT, 80 A, 1.35 V, 230 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:230W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 230W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.56 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
# IHW40N65R5
IHW40N65R5
## **Features:**
**==> picture [221 x 149] intentionally omitted <==**
**----- Start of picture text -----**<br>
voltage<br>* TRENCHSTOP TM _ technology offers:<br>- very tight parameter distribution<br>- high ruggedness and stable temperature behavior<br>- very low V CEsat and low E off<br>- easy parallel switching capability due to positive<br>temperature coefficient in V CEsat<br>* Low EMI<br>* Qualified according to JESD-022 for target<br>¢ Pb-free lead plating; ROHS compliant<br>* Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications:<br>**----- End of picture text -----**<br>
**==> picture [103 x 254] intentionally omitted <==**
**----- Start of picture text -----**<br>
C<br>G<br>E<br>=<br>fale<br>re Mineo,<br>4<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW40N65R5|650V|40A|1.35V|175°C|H40ER5|PG-TO247-3|
2
IHW40N65R5
**==> picture [146 x 65] intentionally omitted <==**
## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3
Rev.�2.3,��2015-12-22
IHW40N65R5
Resonant�Switching�Series
**==> picture [146 x 65] intentionally omitted <==**
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||80.0<br>40.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||32.0<br>19.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||230.0<br>115.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.65|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||2.85|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.3,��2015-12-22
4
IHW40N65R5
Resonant�Switching�Series
**==> picture [146 x 65] intentionally omitted <==**
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.35<br>1.60|1.70<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.70<br>2.00|2.10<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|96.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|4740|-|pF|
|Output capacitance|_C_oes||-|44|-||
|Reverse transfer capacitance|_C_res||-|19|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|193.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=70nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|34|-|ns|
|Rise time|_t_r||-|25|-|ns|
|Turn-off delaytime|_t_d(off)||-|260|-|ns|
|Fall time|_t_f||-|13|-|ns|
|Turn-on energy|_E_on||-|1.10|-|mJ|
|Turn-off energy|_E_off||-|0.37|-|mJ|
|Total switchingenergy|_E_ts||-|1.47|-|mJ|
Rev.�2.3,��2015-12-22
5
IHW40N65R5
**==> picture [146 x 65] intentionally omitted <==**
## Resonant�Switching�Series
## **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=1000A/µs|-|115|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|2.75|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|37.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1550|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=70nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|31|-|ns|
|Rise time|_t_r||-|28|-|ns|
|Turn-off delaytime|_t_d(off)||-|300|-|ns|
|Fall time|_t_f||-|21|-|ns|
|Turn-on energy|_E_on||-|1.30|-|mJ|
|Turn-off energy|_E_off||-|0.61|-|mJ|
|Total switchingenergy|_E_ts||-|1.91|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=1000A/µs|-|142|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|3.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|45.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1550|-|A/µs|
6
Rev.�2.3,��2015-12-22
IHW40N65R5
**==> picture [235 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>Ss ane ee ee<br>_ YA TTTT<br>ee |<br>not for linear use<br>So om<br>6 10 li I<br>oc Pei<br>O ee eee<br>|<br>s 1 LUMIAT CUI<br>DEE<br>Pe<br>tT TTTT<br>CrCOC<br>0.1<br>1 10 100 1000<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Safe operating area<br>( D =0, T C =25°C, T vj 175°C, V GE = =15V, t p=1µs)<br>I C<br>**----- End of picture text -----**<br>
**==> picture [233 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
250<br>200<br>150<br>100<br>a<br>&<br>50<br>0<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>tot<br>P<br>**----- End of picture text -----**<br>
> Figure 2. Power **temperature** ( _T_ vj ≤ 175°C)
**==> picture [472 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
80 120<br>VGE=20V<br>110<br>Na 17V |<br>70<br>100<br>15V<br>ql<br>BNE — =<br>60 90 13V<br>_ |X eg<br>80 11V<br>Lu 50 Lu<br>9V<br>70<br>8V<br>ef Xd] Wy<br>40 60<br>7V<br>50<br>2EReNGe 30 eS 6V<br>eee 40 2 a=<br>“ Cesena<br>20 30<br>\ Sf ON<br>20<br>PIN<br>10<br>| 10 FRAN<br>A<br>0 0<br>\ Pp<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
Figure 4. Typical ( _T_ vj=25°C)
7
IHW40N65R5
**==> picture [469 x 307] intentionally omitted <==**
**----- Start of picture text -----**<br>
120 120<br>VGE=20V T vj=25°C<br>110 110 T vj=175°C<br>TSF 17V E) CLC Oe<br>100 100<br>15V<br>|<br>90 13V 90<br>ee" ///Ae e ee<br>80 11V 80<br>. [hee As |i} tn<br>9V<br>70 Lf 70<br>8V<br>: 60 7 | 8 60<br>7V<br>ee 50 e/a4 50 e eee<br>6V<br>40 40<br>ee 5V ee ee<br>30 30<br>Se PON, Pe] e pe<br>20 20<br>ae ae ee eee<br>10 ne)AN ee 10 ee<br>0 0<br>eS eee ee e<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 7 8<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>I C I C<br>**----- End of picture text -----**<br>
**==> picture [471 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.00 1000<br>IC=10A —————————<br>IC=20A<br>~—& 1.75 L IC=40A L} Ee======<br>= a ee<br>1.50 td(off)<br>tf<br>td(on)<br>100 tr<br>pty | e yo<br>peaSPOUT 1.251.00 fereyESP RE| |e=PGS e ~—-—-—-—+KEEEEEa+oe+ —-}<br>0.75<br>: eB [Sper<br>10<br>See 0.50 __—_—_——_—TL |<br>O a ee es<br>oo ——<br>0.25<br>PEEP) Geer<br>0.00 1<br>0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
> Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =175°C, _V_ CE=400V, _V_ GE =0/15V, _R_ Gon=10 Ω , _R_ Goff=10 Ω , test circuit in Figure E)
8
IHW40N65R5
**==> picture [471 x 623] intentionally omitted <==**
**----- Start of picture text -----**<br>
1E+4 1000<br>td(off) td(off)d(off)<br>I tf Ee es | tff a eeeeee<br>| td(on) pp | td(on)d(on) a ee ee ee<br>tr trr<br>| TTT | ee ee ee ee ee<br>a es 7 7, | | | |<br>7.c 1000 poe_____ c 100 s oe<br>L a eeeeeees<br>Ss ~pAf, es ee<br>5 )<br>O 100 LTpftT_{| _j__}|TT _|_ jj} ) §99 p E ~~ ~~~}~~} ~~ ~~ 4]-~ ~~~e-~~--}----=p ----- ~~~e-~~--}----=p -----e-~~--}----=p ------~~--}----=p -----=p ----- -----<br>SS a e ee<br>QO a ee Pe QO =<br>= a ee ae ee ee ee =<br>10<br>=<br>10 a<br>a—— a a<br>————<br>1 1<br>Os a<br>0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistance junction temperature<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,<br>V GE =0/15V, I C =40A, dynamic test circuit in R Gon=10 ; R Goff=10 Ω , dynamic test circuit in<br>Figure E) Figure E)<br>6 3.0<br>/<br>typ. Eoff<br>Ww _S min.max. EEonts // / /|<br>e 5 fo a 2.5 e<br>:a 4 | i Bet 2.0 | | | Le |<br>: ——~__| “~ a / /<br>~~. a /<br>= —— fs op] | tA LA |<br>x: 3 —_ ~~—T>— ~~ xona 1.5 \// WA<br>:oc ~ ~ SGi fA/ / L.<br>im ~ ) 4 A<br>: ee ee<br>: 2 “| 3 1.0 re a<br>t EL YA<br>Lu = / |Z ZO<br>. |<br>é 1 | 0.5 7YAaA LL ZO<br>Ae| |<br>Canes<br>0 0.0<br>0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
**==> picture [233 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000<br>td(off)d(off)<br>| tff a eeeeee<br>| td(on)d(on) a ee ee ee<br>trr<br>| ee ee ee ee ee<br>7 7, | | | |<br>c 100 s oe<br>a eeeeeees ee<br>§99 p E ~~ ~~~}~~} ~~ ~~ 4]-~ ~~~e-~~--}----=p ----- ~~~e-~~--}----=p -----e-~~--}----=p ------~~--}----=p -----=p ----- -----<br>e ee<br>QO =<br>=<br>10<br>a<br>1<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.4mA)
Figure 12.
(inductive load, _T_ vj =175°C, _V_ CE=400V, _V_ GE =0/15V, _R_ Gon=10 Ω , _R_ Goff=10 Ω , test circuit in Figure E)
9
IHW40N65R5
**==> picture [474 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
4.0 3.0<br>Eoff Eoff<br>Eon Eon<br>3.5 Ets Ets<br>2.5<br>e i) fe<br>3.0<br>uw Z uw<br>7)o -“ 7)o 2.0<br>e) 2.5 ia @) 7<br>a oa aa) wear<br>O wea —_— Oo ee<br>a - _ w Uae<br>WW 2.0 an WW 1.5<br>z 7 _ z<br>Ww / - Ww<br>1.5<br>Zz < Zz eee ae<br>aneee= 1.0 7 Pa7 anean= 1.0<br>° b= g 0.5<br>0.5 —T | |<br>0.0 0.0<br>0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
Figure 14.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =40A, _R_ Gon=10=10 Ω ; _R_ Goff=10=10 Ω , dynamic circuit in Figure E)
**==> picture [103 x 18] intentionally omitted <==**
**----- Start of picture text -----**<br>
T vj =175°C, V CE=400V,<br>I C<br>**----- End of picture text -----**<br>
**==> picture [474 x 310] intentionally omitted <==**
**----- Start of picture text -----**<br>
V GE =0/15V, I C =40A, dynamic test circuit in I C =40A, R Gon=10=10 Ω ; R Goff=10=10 Ω , dynamic test<br>Figure E) circuit in Figure E)<br>16 1E+4<br>130V a<br>= 520V / . aa<br>14 EE— /.A potaa a tfSStt<br>S 12 y, [ee C e ies Oe<br>Coes<br>nT} /<br>Cres<br>: / - f et<br>1000<br>a 10 | = _— ><br>ro) J uw a a a<br>> O | a es<br>WWfi 8 TLE YELLL 2e fjpT UT EE ET [TT]<br>i I<br>E Ba an S ft ty yyy yy<br>6<br>beb< o} s- 100 RELee\ ET<br>Oo PLN<br>- 4 pA;SsA eeSy<br>ieee<br>BAN ee<br>2<br>0 10<br>0 20 40 60 80 100 120 140 160 180 200 0 10 20 30 40 50 60 70 80 90 100<br>Q G , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 15. Typical ( _I_ C=40A)
Figure 16.
( _V_ GE
10
IHW40N65R5
**==> picture [478 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
1<br>Seeriieee ti ares eet ar aree Too<br>. nt eco<br>S$= COIA Ce en Ci 1 Lf a AAI<br>oi) & | EIST<br>mw LUI EPS Dee UTI TUN) ow EERESS<br>1S) PSG 1S) | ||<br>PaoaZ27 0.1 amanHtPCaeSSacoYSA9 All D=0.50.20.1 SaCC raZaSW 0.1 aeS”TTALTTitt< A(| TTI| liasINS. D=0.50.20.1 LETT ETT<br>0.05 0.05<br>Pex pee207i AeoI EMLH OHEHHLEPree t<br>0.02 0.02<br>HINA TTT Ee a CEESETH<br>0.01 0.01<br>F CA F a Bl ee EE<br>. 0.01 Ao single pulse TN) oA A single pulse CO<br>im an ZT rn im mall<br>g re © TTA |<br>Zz rra| (TW Tio ft citi Ro iIT Zz 0.01 — or Ri Ro tn<br>: See eset ti gg < Sete ty Hat<br>A A11 Y<br>A i: 1 2 3 4 p-SA i: EEH 1 2 3 4 5 6<br>ri[K/W]: 0.1900805 0.2281325 0.2083299 6.5E-3 ri[K/W]: 1.668204 0.7015919 0.370506 0.1086465 6.5E-3 1.5E-3<br>τ i[s]: 2.4E-4 3.0E-3 0.01446956 0.2121156 τ i[s]: 2.0E-4 1.0E-3 6.3E-3 0.02172364 0.235345 2.062145<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
**==> picture [75 x 29] intentionally omitted <==**
**----- Start of picture text -----**<br>
Figure 17. IGBT<br>function<br>( D = t p/T)<br>**----- End of picture text -----**<br>
Figure 18.
( _D_ = _t_ p/T)
**==> picture [476 x 279] intentionally omitted <==**
**----- Start of picture text -----**<br>
250 es a | 4.5 Ss ee |<br>T vj F T vj F<br>T vj =175°C,| F =40A —- T vj =175°C,| F =40A<br>Ems)<br>225 4.0<br>—- | [|] Ess) 7<br>o ae<br>200 3.5<br>£ ul =<br>Lu N ~ 4 —<br>175 3.0<br>> N a<br>6 ~ ~ y 2<br>150 > ara 2.5 rT | =<br>s) = e) 7<br>uw MN O<br>125 2.0<br>pta 100 |Eeeiu 1.5<br>75 1.0<br>50 0.5<br>500 600 700 800 900 1000 1100 500 600 700 800 900 1000 1100<br>dI F /dt , DIODE CURRENT SLOPE [A/us] dI F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19.
( _V_ R=400V)
Figure 20. Typical function ( _V_ R=400V)
11
IHW40N65R5
**==> picture [474 x 623] intentionally omitted <==**
**----- Start of picture text -----**<br>
60 | 0 LS |<br>T vj F T vj F<br>55 —- T vj =175°C,| F =40A -200 —- T vj =175°C,| F =40A<br>ry<br>a<br>2 50 | [T T ]! -400<br>Kk |] |? | T T<br>e t<br>pt 45 7 -600<br>Oce 40 ee wete -800 ‘ \ \<br>> [a]<br>Bf |eee Wwtewete EIN\N‘<br>35 -1000<br>Q IN<br>aguyWw 30 < < —ma~ <L-xtxt -1200 \ ‘ S \\\<br>Bier]<br>25 -1400<br>a | EE |INNAINNA<br>ff mn im<br>ow 20 2)ra)ra) -1600 \\\<br>15 -1800<br>10 -2000<br>500 600 700 800 900 1000 1100 500 600 700 800 900 1000 1100<br>dI F /dt , DIODE CURRENT SLOPE [A/us] dI F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>120 2.50<br>T vj=25°C IF=10A<br>110 T vj=175°C IF=20A<br>( , 2.25 E IF=40A<br>Pps) / E e<br>100<br>| ¥ | A<br>cerrpeeyy/ E e<br>90 2.00<br>E 80 Ww eo<br>Zz:i pti tty /ay | 7O 1.75 | ft | 7 pepe-_-77<br>70<br>id a<br>re)iQ 60 ee7 j >Q 1.50 _<br>ce ---<br><x<br>50<br>1.25<br>2 40 ee ee ee<br>7 TT<br>30 1.00<br>20<br>0.75<br>10<br>| /<br>0 Lex | | | | 0.50 Pte<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>I F V F<br>**----- End of picture text -----**<br>
**==> picture [235 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
0 LS |<br>T vj F<br>-200 —- T vj =175°C,| F =40A<br>ry<br>a<br>-400<br>|? | T T<br>-600<br>Wwtewete -800 EIN\N‘ \ \N \<br>-1000<br>IN<br>L-xt-xt<L-xtxt -1200 \ ‘ S \\\<br>-1400<br>EE |INNAINNA<br>im<br>2)ra)ra) -1600 \\\<br>-1800<br>-2000<br>500 600 700 800 900 1000 1100<br>dI F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
12
IHW40N65R5
Resonant�Switching�Series
**==> picture [146 x 65] intentionally omitted <==**
## **Package Drawing PG-TO247-3**
13
Rev.�2.3,��2015-12-22
IHW40N65R5
Resonant�Switching�Series
**==> picture [146 x 65] intentionally omitted <==**
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
**==> picture [153 x 99] intentionally omitted <==**
**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
Rev.�2.3,��2015-12-22
IHW40N65R5
## IHW40N65R5
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2014-06-13|Preliminarydata sheet|
|1.2|2014-06-16|-|
|2.1|2014-09-12|Final data sheet|
|2.2|2014-11-27|Update of diode forward current values|
|2.3|2015-12-22|Minor change Conditions Static Characteristic|
## party.
## **Warnings**
15
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →