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Illustrative purposes only
IHW40N60RFFKSA1
IGBT, 80 A, 1.85 V, 305 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 305W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 3.56 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT
IHW40N60RF
IHW40N60RF
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Features: C<br>* Powerful monolithic body diode with low forward voltage<br>designed for soft commutation only<br>* TRENCHSTOP_ technology applications offers:<br>- very tight parameter distribution<br>G<br>- high ruggedness, temperature stable behavior<br>E<br>- low V CEsat<br>« Low EMI<br>* Qualified according to JESD-022 for target applications<br>¢ Pb-free lead plating; ROHS compliant e<br>*« Complete product spectrum and PSpice Models: Giyy<br>http://www.infineon.com/igbt/<br>Applications:<br>* Inductive cooking<br>* Inverterized microwave ovens G C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW40N60RF|600V|40A|1.85V|175°C|H40RF60|PG-TO247-3|
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IHW40N60RF
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## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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Resonant�Switching�Series
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||80.0<br>40.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||80.0<br>40.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||305.0<br>152.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.49|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||0.49|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
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Resonant�Switching�Series
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## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.85<br>2.30|2.40<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.75<br>2.00|2.20<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.58mA,_V_CE=_V_GE|4.1|4.9|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>3000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|24.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2400|-|pF|
|Output capacitance|_C_oes||-|88|-||
|Reverse transfer capacitance|_C_res||-|68|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=40.0A,<br>_V_GE=15V|-|220.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=5.6Ω,_R_G(off)=5.6Ω,<br>_L_σ=90nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|175|-|ns|
|Fall time|_t_f||-|14|-|ns|
|Turn-off energy|_E_off||-|0.56|-|mJ|
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## Resonant�Switching�Series
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=125°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=125°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=5.6Ω,_R_G(off)=5.6Ω,<br>_L_σ=90nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|205|-|ns|
|Fall time|_t_f||-|23|-|ns|
|Turn-off energy|_E_off||-|0.79|-|mJ|
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Cinfineon Resonant Switching Series IHW40N60RF<br>140<br>|<br>100 H SE re<br>120 PEE<br>PF PR et<br>\ ae ee = eee all<br>SN St Se EH<br>_ 100 AX || _ ee tp=1µs ec |<br><= em] NTA So TISPSST<br>10µs<br>é TC=80° Ty \ = ee as.<br>a @ 10 LN UIA<br>cx 80 TC=110° |EeTh\ aco zz,RSS 50µs ——— eee<br>3 OSS<br>ow oc lz 100µs |<br>\ \ 3 a [Ee]<br>60 200µs<br>:8 40 \—A ST8 1 EAI 500µsDC UE NUUI<br>iil \ era ee el<br>20 \N |<br>0 0.1<br>1 10 100 1000 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V)<br>( T vj ≤ 175°C, D =0.5, V CE =400V, V GE=0/15V,<br>R G=5.6 Ω )<br>350 80<br>300<br>60<br>= 250 \a<br>5<br>6 EE NN<br>i \N<br>200 =)<br>o ef |TK<br>40<br>Xx<br>150 O<br>or Ph NN<br>2 fe)<br>100<br>20<br>50<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>
> Figure 3. Power **temperature** ( _T_ vj ≤ 175°C)
Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
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IHW40N60RF
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120 120<br>VGE=20V VGE=20V<br>100 100<br>17V 17V<br>PRP} PRL YY<br>15V 15V<br>2) 80 13V Ey 80 13V<br>Sie | le ew<br>11V 11V<br>9V se 9V<br>60 60<br>7V 7V<br>PL NPT |) LNA<br>40 40<br>OO<br>|<br>20 20<br>pfPee] | -LAJwK<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T vj=25°C) ( T vj=175°C)<br>I C I C<br>**----- End of picture text -----**<br>
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120 4.0<br>Tj=25°C IC=20A<br>Tj=175°C IC=40A<br>IC=80A<br>I ee<br>ef] 100 fede/ } | & 3.5 e e<br>80 3.0<br>PE ee bee<br>60 2.5<br>O<br>LEATI Al | See<br>40 2.0<br>LEA ya PE<br>20 1.5<br>LALIT} LET<br>0 1.0<br>4 5 6 7 8 9 10 11 12 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Figure 8.<br>( Typical V CE=20V) transfer characteristic wypicaa function collector-emitterof junction temperatureSaturation voltage<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
( _V_ GE=15V)
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IHW40N60RF
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1000 aa<br>| td(off)<br>tf<br>I fo eeEe PRee<br>Pot | | | |<br>e Pp a<br>g 100 RC g<br>= a a =<br>ee<br>a<br>10<br>0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A]<br>t t<br>**----- End of picture text -----**<br>
Figure 9.
(inductive load, _T_ vj =175°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=5.6 Ω , _R_ G(off)=5.6 Ω , dynamic test circuit in Figure E)
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td(off)<br>tf<br>|<br>1000<br>a ee<br>es ee a<br>100<br>po<br>oe<br>10<br>0 10 20 30 40 50<br>R G , GATE RESISTANCE [ Ω ]<br>**----- End of picture text -----**<br>
Figure 10. Typical **resistance**
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(inductive load, T vj =175°C, V CE=400V,<br>V GE =0/15V, I C =40A, dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1000 aa<br>i 1 td(off) poa a a<br>J tf S<br>j p<br>a eeeeee ee,<br>e ee{|ee eee ee I<br>100<br>— | | | /<br>a _I<br>= a aee on<br>F a ee ee Mu<br>Q a<br><= -<br>Bopper<br>=- 10 aa eees | Lu=E<br>po D<br>a a<br>po be<br>1<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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7<br>typ.<br>min.<br>max.<br>6 :<br>wee<br>5 TL<br>me oN<br>4<br>— —<br>oe<br>3 “pst - se sSPS<br>.<br>s.<br>SS<br>2<br>1<br>0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>**----- End of picture text -----**<br>
Figure 11.
Figure 12.
( _I_ C=0.58mA)
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =40A, _R_ G(on)=5.6 Ω , _R_ G(off)=5.6 Ω , test circuit in Figure E)
9
IHW40N60RF
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**----- Start of picture text -----**<br>
2.00 3.0<br>1.75<br>/ 2.5<br>yy<br>1.50 Eoff Eoff<br>z<br>Ww eo | ie/ WwZ 2.0 S Y<br>BE n neeeaen <<br>1.25<br>—! —!<br>O / O Lo<br>O> / O><br>1.00 1.5<br>oO oO<br>0.75<br>efi fs vane<br>-O; - 1.0 ZO<br>I / I<br>0.50<br>0.5<br>0.25<br>0.00 0.0<br>0 10 20 30 40 50 60 70 80 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistance<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =0/15V, R G(on)=5.6 Ω , R G(off)=5.6 Ω , V GE =0/15V, I C =40A, dynamic test circuit in<br>dynamic test circuit in Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
0.80 1.00<br>0.75<br>Eoff 0.75 Eoff<br>an | c 5 — a<br>0.70<br>g SE RRA<br>x 0.65 VA x 0.50 |_|<br>Z Z<br>fi So fi<br>0.60<br>5E aZI 5E<br>0.25<br>aa °<br>0.55<br>0.50 0.00<br>25 50 75 100 125 150 175 200 300 400<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 15.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =40A, _R_ G(on)=5.6 Ω ; _R_ G(off)=5.6 Ω , test circuit in Figure E)
Figure 16.
(inductive load, _T_ vj =175°C, _V_ GE=0/15V, _I_ C =40A, _R_ G(on)=5.6 Ω ; _R_ G(off)=5.6 Ω , test circuit in Figure E)
10
IHW40N60RF
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**----- Start of picture text -----**<br>
16<br>eeee<br>120V<br>480V<br>14 J\_/y es a a<br>12 1000 CCiesoes<br>Cres<br>~¢F0) / // Le_ | a " —”t<br>10<br>5 ,/ uwS a<br>a z ‘<br>fi 8 ——— ax Dews<br>Lu 6 1S), 100 2ee ee ee<br>oO a ee<br>~ a<br>4 es<br>2<br>0 10<br>0 50 100 150 200 250 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>1 1<br>a Fa<br>PTTTT Tn a TT i nL eh el!<br>— PE TTP = PTT CTT<br>= CITTee = Nc<br>Cae Ss ae<br>D=0.5 D=0.5<br>WwZzST SanTT Y oseA 0.2 ieZz Sec ai— — nO rT Y oseoa 0.2 LLANM<br>al 0.1 es 0.1 0.1 LI Al 0.1<br>a. SSSIlAF ee al STLill<br>S= See|e7 eei 0.05 iTh S= Seeese7Aa oe ee 0.05 0|<br>0.02 0.02<br>a Hee LO. MTT 4 HHT. CTT<br>uwNe< COTaia eer Ca 0.01 ITTT uw aTti ee 0.01<br>single pulse single pulse<br>So ee emer cah2a So |<br>TAN Le Tl<br>ii 0.01 Zl ii 0.01 eA ait cal<br>— a a — ee<br>BEE RACEHR Fr oe a<br>fes nh)ew)Hh | -- itnt(i s aEBen ) cens a| -- til![i]il<br>- e e e l<br>PY VAN | T AAL ET TTT PY VAN | T YRAC ETTTET<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.0655 0.1301 0.1899 0.1045 ri[K/W]: 0.0655 0.1301 0.1899 0.1045<br>τ i[s]: 1.4E-4 1.0E-3 0.01054274 0.07949796 τ i[s]: 1.4E-4 1.0E-3 0.01054274 0.07949796<br>|||<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 19. IGBT transient thermal impedance Figure 20. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>C<br>GE<br>V<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
Figure 20. Diode function ( _D_ = _t_ p/T)
11
IHW40N60RF
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**----- Start of picture text -----**<br>
120 3.00<br>Tj=25°C IF=20A<br>Tj=175°C IF=40A<br>2.75 IF=80A<br>100<br>2.50<br>= 80 uw<br>ZzWW: F/ 7O<x 2.25 eae<br>&H<br>60 Q 2.00<br>2!2<br></ <<br>=/=<br>x’ is 1.75<br>40<br>:<br>1.50<br>20 if _|_———__]<br>1.25<br>rT | fy<br>0 1.00<br>0 1 2 3 4 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 21. Typical diode forward current as a function Figure 22. Typical diode forward voltage as a function<br>I F V F<br>**----- End of picture text -----**<br>
12
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Resonant�Switching�Series
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## PG-TO247-3
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IHW40N60RF
Resonant�Switching�Series
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**----- Start of picture text -----**<br>
V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>GE (t)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
Figure D.
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CC Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
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## Resonant Switching Series
## Revision History
IHW40N60RF
Revision: 2015-01-26, Rev. 2.6
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|0.1|2009-06-15|-|
|0.2|2010-03-02|-|
|2.3|2010-03-02|-|
|2.4|2013-12-10|New value ICES max limit at 175°C|
|2.5|2014-03-12|Storage temp-55...+150°C|
|2.6|2015-01-26|Minor changes|
## We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@infineon.com
Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2015 Infineon Technologies AG All Rights Reserved.
## Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.6, 2015-01-26
15
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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