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IHW40N135R3FKSA1
IGBT, 80 A, 1.65 V, 429 W, 1.35 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP™
- Power Dissipation: 429W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 1.35kV
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 1.76 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
# IHW40N135R3
IHW40N135R3
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Features: C<br>* Offers new higher breakdown voltage to 1350V for improved<br>reliability<br>* Powerful monolithic body diode with low forward voltage<br>designed for soft commutation only<br>G<br>* TRENCHSTOP_ technology offering:<br>E<br>- very tight parameter distribution<br>- high ruggedness, temperature stable behavior<br>- low V CEsat<br>- easy parallel switching capability due to positive —<br>CEsat<br>temperature coefficient in V G ppp<br>* Low EMI 70.3, f0On<br>* Qualified according to JESD-022 for target applications<br>¢ Pb-free lead plating; ROHS compliant , &<br>¢ Halogen free (according to IEC 61249-2-21) a<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
## **Applications:**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW40N135R3|1350V|40A|1.65V|175°C|H40R1353|PG-TO247-3|
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IHW40N135R3
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## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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IHW40N135R3
Resonant�Switching�Series
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||1350|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||80.0<br>40.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A|
|Turnoffsafeoperatingarea_V_CE≤1350V,_T_vj≤175°C|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||80.0<br>40.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±25|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||429.0<br>215.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+175||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.35|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||0.35|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.2,��2015-01-26
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IHW40N135R3
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## Resonant�Switching�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|1350|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.90<br>2.00|1.85<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.80<br>1.90|1.85<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.00mA,_V_CE=_V_GE|5.1|5.8|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1350V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|100.0<br>2500.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|33.2|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2712|-|pF|
|Output capacitance|_C_oes||-|88|-||
|Reverse transfer capacitance|_C_res||-|77|-||
|Gate charge|_Q_G|_V_CC=1080V,_I_C=40.0A,<br>_V_GE=15V|-|365.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=7.5Ω,_R_G(off)=7.5Ω,<br>_L_σ=220nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|343|-|ns|
|Fall time|_t_f||-|43|-|ns|
|Turn-off energy|_E_off||-|2.50|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=150.0V/µs|-|0.55|-|mJ|
Rev.�2.2,��2015-01-26
5
IHW40N135R3
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## Resonant�Switching�Series
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=175°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=7.5Ω,_R_G(off)=7.5Ω,<br>_L_σ=220nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|415|-|ns|
|Fall time|_t_f||-|98|-|ns|
|Turn-off energy|_E_off||-|4.51|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=150.0V/µs|-|1.24|-|mJ|
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IHW40N135R3
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450<br>100 ee ea<br>PARE SEE Seer 400<br>_ Se eePP SeSNeaeeeraee _ 350 PNP| fp ft<br>300<br>Sevierg tp=1µs SLM] e8 | AE |<br>w~ 10 Pet ae EB at rH <x<br>e e<br>5 5µs eeCee 250<br>O Po 10µs ee eS op) \<br>ow a A ee eee eee 2) 200 Pf | N | oy<br>O ee o \<br>Of 50µs em LENENT<br>1ms 150<br>=6 1 PTLETT TNSS TY 5 :<br>10ms<br>LTT TT T titi =~ | Tr 100<br>DC<br>aee 50 Pf ff | \NY<br>0.1 criti cio |= LN 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V) temperature<br>( T vj ≤ 175°C)<br>80 120<br>| /<br>110 RRR sean<br>70 VGE=20V<br>100<br>17V<br>er<br>BN eee<br>60 90<br>_ LN ; 15V ay<br>80 13V<br>Wwef 50 NO Ww Seer<br>70 11V<br>DD<br>et: 40 UN de 60 9V Ape<br>fe)<br>fe) e 7V iy<br>50<br>uwRNa: 30 uw 5V \ /[een<br>eSe\ e 40 \\ y<br>20 30<br>20<br>PN]S Ek)<r<br>10<br>ey AN<br>10<br>Po EN eeYo) \N<br>0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
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IHW40N135R3
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120 7 Wi 120 a<br>Tj=25°C<br>110 110 Tj=175°C<br>TT VGE=20V eae<br>100 e/a 100<br>17V<br>_ 90 ee 2| A ee 90 eP e<br>15V<br>ee | Ly _ ie<br>80 13V 80<br>raWW ee)7 WW2<br>70 11V 70<br>2D | Lops7, L tteD tL) tg<br>9V<br>60 60<br>e)S| ly 7V e)re<br>ee 50 ey ee 50 ee ee<br>5V<br>4 1Aw tye tp<br>40 40<br>O5 xSi( Lo 5)5<br>30 30<br>: NIK e E<br>20 20<br>NI Ea<br>10 10<br>LIZ NAT ae ae<br>0 0<br>PAT ON p o p ey |<br>0 1 2 3 4 5 4 5 6 7 8 9 10 11 12<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=175°C)
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**----- Start of picture text -----**<br>
Figure 6. Typical<br>( V CE=20V)<br>**----- End of picture text -----**<br>
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3.5<br>IC=20A td(off)<br>IC=40A tf<br>IC=80A 1000<br>= a a<br>7-6 Bet<br>ro9| 3.0 C O) aPNASS SES<br>ra 5 Loe<br>pC ery ARES<br>2.5<br>2 “ ee<br>E oO ATT Ae<br>pee DERE<br>100<br>Pope LA<br>2.0<br>o KE a<br>O Uoe-7 = po eT<br>im = a<br>ge , a ee<br>1.5<br>: a ee Pt | tt |<br>1.0 10<br>Prey yyy } LEE<br>0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G(on)=7.5 Ω , _R_ G(off)=7.5 Ω , dynamic test circuit in Figur
8
IHW40N135R3
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**----- Start of picture text -----**<br>
— 1000 a<br>td(off) | td(off)<br>tf tf<br>= | f= | aa eeee ee ee<br>1000<br>——— ee ee ee<br>e EAE es EE<br>Sa |yt |i] | {| |] |<br>ee==<br>FF<br>g g 100 a Ee<br>==<br>100<br>2Ss= peeetete aeeeee<br>te] ee Oo<br>a a a a OO<br>AGG CO cle OO<br>| | | | tT tT | pf} fj | )<br>10 10<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistance junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A, dynamic test circuit in I C =40A, R G(on)=7.5 Ω ; R G(off)=7.5 Ω , dynamic<br>Figure E) test circuit in Figure E)<br>7 9<br>typ. E off<br>min.<br>max. 8<br>ee FL} fe<br>6<br>ee 7 /<br>6<br>ys eo)<br>ee: 7<br>5<br>5<br>:Bf pt [PKU] 8 7<br>e . Zz 4 /<br>- SSPE LLL LZ<br>| | |LNG 8<br>4<br>3<br>eee: Z<br>uw ‘<br>2<br>Bf“PEP 3 PPT} - 1 taV4<br>2 0<br>0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=1mA) (inductive load, T vj =175°C, V CE=600V,=600V,<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
(inductive load, _T_ vj =175°C, _V_ CE=600V,=600V, _V_ GE =0/15V, _R_ G(on)=7.5 Ω , _R_ G(off)=7.5 Ω , dynamic test circuit in Figu
9
IHW40N135R3
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7 5.0<br>E off E off<br>4.5<br>oy<br>oy va pot | |<br>z yiye f o<br>6<br>7) 7) 4.0<br>g Zo g 7<br>:>4 re A<br>:<br>w 5 4ZL Wwowge 3.5<br>Ww Ww<br>é wz Ae<br>Zz 4 Zz<br>3.0<br>= 4<br>2.5<br>3 2.0<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistance function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A, dynamic test circuit in I C =40A, R G(on)=7.5 Ω ; R G(off)=7.5 Ω , dynamic<br>Figure E) test circuit in Figure E)<br>E E<br>**----- End of picture text -----**<br>
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10 4.5<br>E off Tj=°C<br>Tj=°C<br>See 4.0 ie<br>9<br>3.5<br>8<br>2 2 3.0<br>7<br>—! —! ‘<br>2.5<br>6<br>Ww Ww 2.0 :<br>Zz 5 4 Zz “7<br>1.5<br>= 4 Y = a<br>7) 7) 1.0 : oa<br>3<br>0.5<br>2 0.0<br>400 600 800 1000 1200 1400 100 1000<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] dv/dt , VOLTAGE SLOPE [V/us]<br>E E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16.
(inductive load, _T_ vj =175°C, _V_ GE=0/15V, _I_ C =40A, _R_ G(on)=7.5 Ω ; _R_ G(off)=7.5 Ω , test circuit in Figure E)
(inductive load, _T_ vj =175°C, _V_ GE=0/15V, _I_ C =40A, _R_ G=7,5 , dynamic test circuit Figure E)
10
IHW40N135R3
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16<br>a 7 a eeee ee<br>270V Cies<br>1080V Coes<br>14 / P| | | Cres |<br>1E+4<br>S 12 cA —————<br>Wu , ? (aa ee ee ee ee ee eee<br>FF 10 Lo a<br>~ —— / Zz 1000 a A SS SS SS<br>gy ee ys EEC<br>ui 8 ; {| [ | =< |__|a |_____|__|_|______|<br>E oO Cs es es<br>uw 6 & \<br>ul oO [Ne | | | tT |<br>p 4 c 100<br>aa eeeeee ee ee<br>2<br>PPE EE Ceeee ee<br>0 10<br>0 50 100 150 200 250 300 350 400 0 3 6 9 12 15 18 21 24 27 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>1 1<br>| noon<br>o YTTT UT a | |||<br>= CCInC TS a<br>ag A A<br>Be D=0.5 D=0.5 a<br>Zz ETM B&LE EINE nT<br>7p)DSIA 0.1 aaPFE He WATttLAItil 0.20.1 HHH] Zz-D 0.1 CCIIAPH He WATTttLAIati 0.20.1 Ht<br>0.05 0.05<br>LWWd SeeCnseo!erle ae oAit LW«ae SaCneiserle an1 |<br>0.02 0.02<br>4 THERA TMC... MITT 4 THATM. MTT<br><x a 0/ A ae HI) TTT & a B07 A ae 1|<br>0.01 0.01<br>2 smanitinmmaN/ lO Pt 2 smear 7 Zt Pat |<br>single pulse single pulse<br>kea eT y AO a ee ke A/ el<br>I ee = ILee<br>0.01 0.01<br>Ww UIT Tl<br>D 0s cat Ww 271s cat<br>Z roRa a 2 See ia ais et ee ee<br>s YT TY FTer TT Re-- oiH l Zs iYT TT PTer Rell-- Ill<br>te ACY i} Le A ill<br>- TAIar AA TUTTIWAN[cee ceetelee l f TI FOUA TUTTI TTT | este cee telRe___ l l<br>i: 1 2 3 4 5 i: 1 2 3 4 5<br>ri[K/W]: 0.060632 0.080405 0.18889 0.015093 2.0E-3 ri[K/W]: 0.060632 0.080405 0.18889 0.015093 2.0E-3<br>τ i[s]: 2.9E-4 2.2E-3 0.01389068 0.1188353 1.860864 τ i[s]: 2.9E-4 2.2E-3 0.01389068 0.1188353 1.860864<br>es OTC TTT<br>0.001 /| [|] et) 0.001 |<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 19. IGBT transient thermal resistance Figure 20. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>C<br>GE<br>V<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
Figure 20. Diode function ( _D_ = _t_ p/T)
11
IHW40N135R3
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**----- Start of picture text -----**<br>
80 3.0<br>Tj=25°C IF=20A<br>Tj=175°C IF=40A<br>70 IF=80A<br>2.5<br>60<br>Zzef>poi: 50 / o) ELE<br>im5 7 7 Bo<x fete<br>oe 5 2.0<br>3><br>40 Q<br>0x<br>S [S] 1.5<br>:; 30 ; aa eepC<br>20<br>Ii ETE<br>1.0<br>ET<br>10<br>0 0.5<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 21. Typical diode forward current as a function Figure 22.
12
IHW40N135R3
Resonant�Switching�Series
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## PG-TO247-3
13
Rev.�2.2,��2015-01-26
IHW40N135R3
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## Resonant�Switching�Series
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**----- Start of picture text -----**<br>
V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>GE (t)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
Figure D.
**==> picture [102 x 46] intentionally omitted <==**
CC Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
Rev.�2.2,��2015-01-26
IHW40N135R3
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## Resonant Switching Series
## Revision History
IHW40N135R3
Revision: 2015-01-26, Rev. 2.2
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2012-10-12|Final data sheet|
|2.2|2015-01-26|Minor changes|
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Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2015 Infineon Technologies AG All Rights Reserved.
## Legal Disclaimer
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## Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.2, 2015-01-26
15
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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