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IHW40N120R5XKSA1
IGBT, 80 A, 1.55 V, 394 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:394W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 394W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.61 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
IHW40N120R5
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C<br>monolithic body diode with low forward voltage<br>for soft commutation<br>_ technology offering:<br>tight parameter distribution<br>G<br>ruggedness, temperature stable behavior<br>E<br>CEsat<br>parallel switching capability due to positive<br>coefficient in V CEsat<br>EMI<br>according to JESD-022 for target applications 2<br>lead plating; ROHS compliant a,<br>free (according to IEC 61249-2-21) rp tinegy<br>product spectrum and PSpice Models: “Sg<br>cooking<br>ovens G<br>C<br>E<br>**----- End of picture text -----**<br>
## **Features:**
http://www.infineon.com/igbt/
## **Applications:**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW40N120R5|1200V|40A|1.55V|175°C|H40MR5|PG-TO247-3|
Datasheet www.infineon.com
2019-09-20
IHW40N120R5
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## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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Datasheet
IHW40N120R5
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## Resonant�Switching�Series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||80.0<br>40.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A|
|Non repetitivepeak collector current1)|_I_CSM||200|A|
|Turn off safe operating area<br>_V_CE≤1200V,_T_vj≤175°C,_t_p=1µs|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||80.0<br>40.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±25|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||394.0<br>197.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.38|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.38|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3µs
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Datasheet
IHW40N120R5
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## Resonant�Switching�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.55<br>1.80<br>1.90|1.85<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.90<br>2.20<br>2.30|2.10<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.00mA,_V_CE=_V_GE|5.1|5.8|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>800|100<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|30.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2370|-|pF|
|Output capacitance|_C_oes||-|70|-||
|Reverse transfer capacitance|_C_res||-|60|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=40.0A,<br>_V_GE=15V|-|310.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|420|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-off energy|_E_off||-|1.60|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=200.0V/µs|-|0.22|-|mJ|
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## Resonant�Switching�Series
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=175°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|490|-|ns|
|Fall time|_t_f||-|90|-|ns|
|Turn-off energy|_E_off||-|2.90|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=200.0V/µs|-|0.57|-|mJ|
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IHW40N120R5
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400<br>100 360<br>eT ON EET<br>ee<br>fet tt y ee ee e e eee 320 .<br>not for linear use<br>—x (7 eee Tme e } 280 Py IN\ ET EE<br>io@oe 10 TTCEM TMM I je)@ 240 EAA\ EE<br>oww2 eeeeeSyaeas2eeSSerseeeeeee e eeSeteee ee eeee Bbxio)2) 200 PET TEAL\ TLL}<br>| 160 PET TEEN | | | 4<br>re |<br>sO 1 eeeLTTETUM TMMee ee ee eee @° 120 EEEEN\ ET<br>Sa ToT \<br>rT TTT ECT TTT TE TTT \<br>a ee eee 80 \<br>a a SRRReeEERNG<br>40<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE =15V; t p=1µs) temperature<br>( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br>
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80 120<br>VGE = 20V<br>100<br>17V<br>60 15V<br>< < [|<br>80 13V<br>11V<br>a a Ht! /<br>9V<br>: \ : i//<br>ag 40 ag 60 8V /<br>2 \ e Mi<br>7V<br>a a f]<br>40 5V<br>3 \ : i><br>20<br>\ 20 1X\Ki\<br>\ AGLY<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br>
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IHW40N120R5
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120 120<br>Tvj = 25°C<br>Tvj =175°C<br>VGE = 20V<br>100 100<br>17V<br>15V<br>< <<br>b 80 13V 80<br>a 11V ~~ // Vaan bE<br>or NAY i i<br>9V 3<br>3 60 SI // or 60<br>oc 8V SH, f oc<br>TEENY 7V 2<br>im i] im !<br>= f/ =<br>fe) 40 5V Us _——$—$—— 9d 40<br>© Ven ) }<br>20 YK L\ ee 20<br>pA<br>0 Aq [iN] : 0 /)<br>0 1 2 3 4 5 0 2 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
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Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>3.0<br>IC = 20A td(off)<br>IC = 40A tf<br>IC = 80A 1000<br>Ss c e a se es<br>i 7 a a a<br>Zz Prat po<br>° ae pat<br>2.5<br>E ae a a ee ee eee<br>cw oa cs es<br>(op)i= -|e x 2]- }} tt tt<br>E 2.0 )<br>100<br>OE ae oo E= aa eeaeeece<br>O - a a a ee ee ee ee<br>wy ~eoT - a ee ee ee<br>a 1.5 — a ee eee eee<br>a a pA | | | TT<br>1.0 10<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =175°C, V CE=600V,=600V,<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V CE=600V,=600V,<br>V GE =0/15V, r G=10 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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IHW40N120R5
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**----- Start of picture text -----**<br>
1E+4 Td] ________ 1000 (<br>1 td(off) a i td(off) A ee<br>tf tf<br>Snee { ffft ff ff<br>z 4 Pt tte yy yy<br>1000 —T te {tt<br>ip) a ce<br>im a esce ee ee ee ip)|<br>- Z| F<br>100<br>: 8 FERRE eee<br>zSe 100 | | tTsOa aeoe a<br>es a -”<br>a ee ee L<br>Oe :<br>10 10<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A,Dynamic test circuit in I C =40A, r G=10 ,Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>
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7.0 7<br>Eoff<br>typ.<br>min.<br>max. 6<br>6.2<br>y “*s > J<br>:O> .SSa (op)LuZ 5 J VA/<br>5.4<br>o N ‘SN 7 /<br>i 4 /|<br>wa<br>aa i & W<br>= *Ss ms 3<br>3<br>i ~ NS c /<br>4.6<br>wi N ) y<br>Ww= ~N LO<br>2<br>Ly ~N E /<br>: 3.8 Sy = Sf<br>: ALE LLL<br>1<br>3.0 0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=1mA) T vj V CE=600V,<br>V tote GE = oat; r G=10 Ω mihi,Dynamicic testtest circuitcircuit in<br>Figure E)<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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IHW40N120R5
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**----- Start of picture text -----**<br>
4.5 3.0<br>Eoff Eoff<br>4.1 2.7<br>nm nm<br>op) y op)<br>3.7 2.4<br>>>g / g A<br>O<br>na naO<br>oOZz9 3.3 SfVA 9oOZz 2.1 VA<br>OO<br>EE<br>®<br>2.9 1.8<br>2.5 1.5<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A, Dynamic test circuit in I C =40A, r G=10 ,Dynamic test circuit in<br>Figure E) Figure E)<br>3.5 1.50<br>Tvj = 25°C<br>Eoff Tvj = 175°C<br>1.25<br>E E /<br>nm nm<br>op) 4 op)<br>2 3.0 2 1.00<br>—! —!<br>fe) / fe) /<br>© © 4<br>ow J ow /<br>2 W 2 0.75<br>uw uw 7<br>o) 0) 7<br>==<br>: J : LZ<br>: 2.5 : 0.50 :<br>z / = / V4<br>| | 4 a<br>VA 0.25 7 LZ<br>7A<br>nm<br>2.0 0.00<br>400 450 500 550 600 650 700 750 800 0 10 20 30 40 50 60 70 80<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] I C , COLLECTOR CURRENT [A]<br>E E<br>E E<br>**----- End of picture text -----**<br>
Figure 15.
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**----- Start of picture text -----**<br>
I C =40A, r G=10<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
T vj =175°C, V GE=0/15V,<br>**----- End of picture text -----**<br>
Figure 16.
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**----- Start of picture text -----**<br>
(inductive load, V CE =600V, V GE=0/15V,<br>R G=10<br>**----- End of picture text -----**<br>
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IHW40N120R5
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**----- Start of picture text -----**<br>
16 _.] 1E+4 a<br>VV CCCC - , H1 CCiesoes aa aa<br>14 ea e |F / ' Cres a<br>\<br>7<br>a ee<br>faaS 12 Y E E<br>Lu ) P |<br>1000<br>ke Q a<br>fe)I> 10 Pf} 7 Ww= aa eeeeee ee<br>ow O Bh<br>Ul 8 Ty e2 ahseeeeee<br>ul= S)a :ee<br>6<br>K <° <> “SN<br>100<br>O a ee ee ee<br>> a ak<br>4 a es eel<br>a es<br>2<br>ee ee ee ee ee<br>0 10<br>0 40 80 120 160 200 240 280 320 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>1 | 1<br>PT TT TT| | | | PT TT |<br>oon ooo ooo Coo ooo ooo<br>PTE TT PTT TTT TT TTT TT TTT<br>=_ Pf Ey = Pf i t<br>zg. ae a cael ema zg. I ect TT<br>ieee 0 s e e<br>D = 0.5<br>DSSTACI 0.1 bi DS€ = 0.1 I KY \\\\\_m<br>7)Yo eetA ee Pe ee 0.2 LE tH<br>Tey D = 0.5 rom Con” 0.1<br>ac SSS EO<br>z 0.2 ZAILI 0.05 TC<br>= ISS 0.1 CM TM = ean 0.02 1I<br>ee ee L LUI EI) Ae eat 1<br>£ BE? /|Walias 0.05 Le ae J, el 0.01 ML<br>0.02 single pulse<br>E | a at E Oh) eiceciimai I<br>Gi— 0.01 a mail!DAY Ai Ve a 0.01 | Gi— 0.01 APe /A |<br>(¢p) a A eT | (¢p) — Tei TT<br>Zz i | Zz TAT<br>s& eAAC iTT single pulse ee I s PAVa Tn PTT |pe<br>/ _- .<br>. IPICCEER EE HEE ] E CA RPEig I<br>AAW ETI LUMI i:ri[K/W]: 16.6E-3 Wcthe 20.108909 30.154872 cette 40.109704 Ill E i:ri[K/W]: l 10.03881 20.08583 30.11772 40.13766<br>τ i[s]: 1.1E-5 2.9E-4 3.5E-3 0.02156 τ i[s]: 7.0E-5 1.0E-4 2.7E-3 0.02792<br>ll | a ——|<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]]<br>C<br>GE<br>V<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
> Figure 19. IGBT ( _D_ = _t_ p/T)
Figure 20.
( _D_ = _t_ p/T)
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IHW40N120R5
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**----- Start of picture text -----**<br>
120 4.0<br>/ a<br>Tvj = 25°C IF = 20A<br>Tvj = 175°C IF = 40A<br>== / / IF = 80A<br>100 | 3.5 a<br>/ _-*<br>/ “7<br>< / _S wt .<br>Pa 80 Lu 3.0 ae<br>WW // 0)< eoae<br>i)o / re} o* --<br>OoQ 60 a 2.5 --<br><xa <<br>= = _<br>ag w —<br>2 40 | ro)= 2.0 ae= =_\—<br>/<br>20 1.5<br>0 1.0<br>0 1 2 3 4 5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 21.
Figure 22.
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2019-09-20
IHW40N120R5
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## Resonant�Switching�Series
## **Package Drawing PG-TO247-3**
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V�2.3 2019-09-20
Datasheet
IHW40N120R5
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## Resonant�Switching�Series
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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V�2.3 2019-09-20
Datasheet
IHW40N120R5
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## Resonant�Switching�Series
## **Revision�History**
IHW40N120R5
## **Revision:�2019-09-20,�Rev.�2.3**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2018-04-17|Final Datasheet|
|2.2|2018-09-17|Added thermal network on Fig.19 & 20|
|2.3|2019-09-20|additionalparameter in maximum ratings table: non repetitivepeak collector current|
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V�2.3 2019-09-20
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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