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IHW40N120R3FKSA1
IGBT, 80 A, 1.55 V, 429 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 429W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.65 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
# IHW40N120R3
IHW40N120R3
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C<br>monolithic body diode with low forward voltage<br>for soft commutation only<br>_ technology offering:<br>tight parameter distribution<br>G<br>ruggedness, temperature stable behavior<br>E<br>CEsat<br>parallel switching capability due to positive<br>coefficient in V CEsat<br>EMI oe<br>according to JESD-022 for target applications Gi pp<br>lead plating; RoHS compliant 70.3, f0On<br>free (according to IEC 61249-2-21)<br>product spectrum and PSpice Models: , =<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
## **Features:**
http://www.infineon.com/igbt/
## **Applications:**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW40N120R3|1200V|40A|1.55V|175°C|H40R1203|PG-TO247-3|
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IHW40N120R3
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## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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Rev.�2.2,��2015-01-26
IHW40N120R3
Resonant�Switching�Series
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||80.0<br>40.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A|
|Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤175°C|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||80.0<br>40.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±25|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||429.0<br>215.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+175||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.35|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||0.35|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.2,��2015-01-26
4
IHW40N120R3
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## Resonant�Switching�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.55<br>1.80<br>1.90|1.75<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.70<br>1.80|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.00mA,_V_CE=_V_GE|5.1|5.8|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|100.0<br>2500.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|35.3|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2708|-|pF|
|Output capacitance|_C_oes||-|87|-||
|Reverse transfer capacitance|_C_res||-|76|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=40.0A,<br>_V_GE=15V|-|335.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=7.5Ω,_R_G(off)=7.5Ω,<br>_L_σ=220nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|336|-|ns|
|Fall time|_t_f||-|38|-|ns|
|Turn-off energy|_E_off||-|2.02|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=150.0V/µs|-|0.48|-|mJ|
Rev.�2.2,��2015-01-26
5
IHW40N120R3
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## Resonant�Switching�Series
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=175°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=7.5Ω,_R_G(off)=7.5Ω,<br>_L_σ=220nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|410|-|ns|
|Fall time|_t_f||-|96|-|ns|
|Turn-off energy|_E_off||-|3.93|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=150.0V/µs|-|0.78|-|mJ|
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IHW40N120R3
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450<br>100<br>Se eTeeae 400 OK EL<br>ee ee<br>_ feeeeAeet OSreteaeOfoe antne _ 350 PNPt fp ft<br>300<br>ZzServerge 10 tp=1µs I. | i eZz | AE |<br>oa eda Dh | <x8<br>5µs 250<br>SFO Pdeeee]<br>m4 ee 10µs ee ee ee op) \<br>O at eer te eh a) 200 Pf | N | oy<br>Qt 50µs TS o N<br>=| 1ms ert TTTSCTE in 150 awe<br>6 1 ffPPE| TTT TA | 5& :<br>10ms<br>100<br>DC<br>— LTT = T T titi = | (rrnm \<br>LTT ETE EET 50 Pf ff | NY<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case case<br>( D =0, T C =25°C, T vj 175°C: V GE=15V)=15V) temperature<br>I C P tot<br>**----- End of picture text -----**<br>
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Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case case<br>( D =0, T C =25°C, T vj 175°C: V GE=15V)=15V) temperature<br>( T vj ≤ 175°C)<br>80 120<br>110<br>70 ROLL VGE=20V Svea<br>. LL] 100 «PerePe<br>17V<br>\ LITYE<br>60 90<br>z 15V ||<br>x >< T7<br>80 13V<br>eC NCCEO: Pee<br>50<br>2w S 2w 70 11V twoT | |<br>D D<br>et IN | | fs 9V fT<br>40 60<br>: : 7V No<br>50<br>| 30 DOES] E PRSFEGEE 5V<br>:: . Se 40 | oYPQ<br>| \ aa N/a<br>20 30<br>20<br>PONG)8 NYFEQKEEEE<br>10<br>10 en) ANGe eee<br>ee Ve N\<br>0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br>
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IHW40N120R3
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120 120<br>/ a /<br>Tj=25°C<br>110 110 Tj=175°C<br>Ty VGE=20V Bae<br>100 100<br>le 17V eee e ee<br>90 90<br>15V<br><x- | a <x fo 5<br>80 13V 80<br>WW: HL WW Pt EE |<br>70 11V 70<br>a): Be JAEa) P| tT | tT dT<br>9V<br>60 60<br>: 7V HY | § eee<br>: 50 ep 50<br>5 a<br>i 5V \ op<br>: 40 LLa 5 40<br>O<br>O IAN Z| ee<br>30 30<br>: SEN) 4a e P| EE Ly |<br>20 20<br>KN Pt tt | |<br>10 10<br>fo ee ee<br>0 0<br>PANN Pop ed T |<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 5 6 7 8 9 10 11 12<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
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Figure 5. Typical<br>( T vj=175°C)<br>**----- End of picture text -----**<br>
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Figure 6. Typical<br>( V CE=20V)<br>**----- End of picture text -----**<br>
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3.0<br>IC=20A td(off)<br>IC=40A tf<br>-f Jo) IC=80A 1000 El<br>9 po<br>S es 80eae=—==——<br>2.5<br>> a a a ee ee eee<br>ra z a ee ee<br>s22260008. Senne<br>2.0<br>= 72a<br>100<br>PC = pee<br>o . KE a se<br>O cokes = == poeese<br>oI 1.5 — a ee ee es ee<br>1.0 10<br>0 Pit 25 50 eri 75 100 125 150 E y 175 0 ELL 10 20 30 ty 40 50 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G(on)=7.5 Ω , _R_ G(off)=7.5 Ω , dynamic test circuit in Figur
8
IHW40N120R3
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— 1000 a<br>td(off) | td(off)<br>tf tf<br>= | f= a ee ee<br>1000 e e<br>a | a ee ee<br>— ee<br>ee ee ee eee<br>e EAE EE<br>Ss | yt |i] |i] {| | | |<br>ee==<br>FF<br>g 100<br>=<br>100 SSee<br>2= eeee = a aee es ee a<br>= bP t+t+tey = eT<br>a aAGsa ae Se<br>CSS CO See<br>| | | | tT tT | pf} fj | )<br>10 10<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br>
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Figure 9. Typical<br>resistance<br>**----- End of picture text -----**<br>
(inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _I_ C =40A, dynamic test Figure E)
Figure 10.
(inductive load, _V_ CE =600V, _V_ GE=0/15V, _I_ C =40A, _R_ G(on)=7.5 Ω ; _R_ G(off)=7.5 Ω , test circuit in Figure E)
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8<br>typ.<br>min.<br>max.<br>Ww<br>< 7<br>3> . wee<br>ral 6 L<br>ae |aoN<br>i 5 to NN<br>en<br>k re .<br>: 7 ; . ~<br>nyuw 4 s a<br>3<br>2<br>0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. of ( _I_ C=1mA)
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7<br>6 VA<br>E off<br>(— /<br>5 Lf<br>/<br>4<br>Lf<br>SaeZeaee<br>3<br>|<br>2<br>Z<br>1<br>0<br>0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A]<br>**----- End of picture text -----**<br>
Figure 12.
(inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G(on)=7.5 Ω , _R_ G(off)=7.5 Ω , dynamic test circuit in Figu
9
IHW40N120R3
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6 4.0<br>3.5<br>oy oy<br>5 E off E off<br>Ww Ww<br>7)2 |= ZO 27) 3.0 |=] f<br>@) L @)<br>—! —!<br>B x B Yo<br>Zz& 4 Zz& 2.5 WA Z|<br>oO oO<br>Zz Zz<br>OO 2.0<br>EE<br>== 3<br>1.5<br>2 1.0<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
_V_ GE =0/15V, Figure E)
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T vj =175°C, V CE=600V,<br>I C<br>**----- End of picture text -----**<br>
Figure 14.
(inductive load, _V_ CE =600V, _V_ GE=0/15V, _I_ C =40A, _R_ G(on)=7.5 Ω ; _R_ G(off)=7.5 Ω , test circuit in Figure E)
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7 3.0<br>Tj=°C<br>Tj=°C<br>6<br>5 js 2.5<br>E off<br>5<br>n ra n 2.0<br>a<br>:> 4 4— aa):> c<br>ow ow ’<br>2 1.5<br>a<br>3 1a ai 4<br>5 5 1.0 na<br>2<br>0.5<br>1<br>0 0.0<br>400 500 600 700 800 900 1000 1100 1200 100 1000<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] dv/dt , VOLTAGE SLOPE<br>E E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16.
(inductive load, _T_ vj =175°C, _V_ GE=0/15V, _I_ C =40A, _R_ G(on)=7.5 Ω ; _R_ G(off)=7.5 Ω , test circuit in Figure E)
(inductive load, _T_ vj =175°C, _V_ GE=0/15V, _I_ C =40A, _R_ G=7,5 , dynamic test circuit Figure E)
10
IHW40N120R3
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16 1E+4<br>240V , a a Cies —<br>960V Coes<br>: ’ a ee ee ee az<br>14 ee ———— Cres<br>J | SSa a SSeee eeE -<br>S 12 Js en e e<br>O J _<br>1000<br>: / |? _ | ty |<br>a= 10 TLLyY/ ds= a<br>ro)ow> 8 | of SL, m 7/ , WwzZO aEsa aeess<br>ul PT < a eeee<br>6<br>Ee SSS. 100 eS es<br>)- eeaaaa<br>4 aee<br>a eeee<br>2<br>a a<br>0 10<br>0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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1 1<br>| noon<br>o YTTT UT a | |||<br>= CCInC TS a<br>ag A A<br>Be D=0.5 D=0.5 a<br>Zz ETM B&LE EINE nT<br>7p)ZA 0.1 aPFE Heee ttPZtilalll 0.20.1 HHH] Zz- 0.1 YEIIAPH He ttLAIati 0.20.1 Ht<br>0.05 0.05<br>LWWd SeeCnseo!erle ae oAit LW«ae SaCneiserle an1 |<br>0.02 0.02<br>4 THERA TMC... MITT 4 THATM. MTT<br><x a 0/ A ae HI) TTT & a B07 A ae 1|<br>0.01 0.01<br>2 smanitinmmaN/ lO Pt 2 smear 7 Zt Pat |<br>single pulse single pulse<br>-a eT AO a ee Ael<br>I eW e F= ILeei<br>0.01 0.01<br>ir UIT Tl<br>D EIN Ae [ Deer AI ir 2/0 coh<br>Z roRa a 2 See ia ais et ee ee<br>s A)er Re-- oilHl Zs iA) aer Rell-- Ill<br>te ACY i} Le A ill<br>- TAIar AA TUTTIWAN[cee ceetelee l f TI FOUA TUTTI TTT | este cee telRe___ l l<br>i: 1 2 3 4 5 i: 1 2 3 4 5<br>ri[K/W]: 0.060632 0.080405 0.18889 0.015093 2.0E-3 ri[K/W]: 0.060632 0.080405 0.18889 0.015093 2.0E-3<br>τ i[s]: 2.9E-4 2.2E-3 0.01389068 0.1188353 1.860864 τ i[s]: 2.9E-4 2.2E-3 0.01389068 0.1188353 1.860864<br>es OTC TTT<br>0.001 /| [|] et) 0.001 |<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 19. IGBT transient thermal resistance Figure 20. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
Figure 20. Diode function ( _D_ = _t_ p/T)
11
IHW40N120R3
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80 3.0<br>Tj=25°C IF=20A<br>Tj=175°C IF=40A<br>70 IF=80A<br>2.5<br>60<br>=] | fh [s f e<br>im5 50 <xgfOo fee<br>2.0<br>Zz PT<br>i 3<br>3><br>40 Q<br>Sey ;ye Sg 1.5 Leper<br>30<br>: [_/ a<br>|<br>; § {| | | | | | + —<br>20<br>ETE<br>1.0<br>ET<br>10<br>0 0.5<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 21. Typical diode forward current as a function Figure 22.
12
IHW40N120R3
Resonant�Switching�Series
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## PG-TO247-3
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## Resonant�Switching�Series
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**----- Start of picture text -----**<br>
V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>GE (t)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
Figure D.
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CC Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## Resonant Switching Series
## Revision History
IHW40N120R3
Revision: 2015-01-26, Rev. 2.2
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2012-10-12|Final data sheet|
|2.2|2015-01-26|Minor changes|
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Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2015 Infineon Technologies AG All Rights Reserved.
## Legal Disclaimer
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## Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.2, 2015-01-26
15
Updated at February 9, 2023
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