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IHW30N90T
IGBT, 30 A, 1.7 V, 428 W, 900 V, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:428W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247; No. of Pins:3Pins
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 428W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 30A
- Collector Emitter Voltage Max: 900V
- Collector Emitter Saturation Voltage: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 1250 |
| Price | 2.62 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IHW30N90T q Soft Switching Series ## Cinfineon ## Low Loss DuoPack : IGBT in TrenchStop[®] and Fieldstop technology with anti-parallel diode ## **Features:** - 1.1V Forward voltage of antiparallel diode - TrenchStop[®] and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive - temperature coefficient in _V_ CE(sat) - Low EMI - Qualified according to JEDEC[1] for target applications **==> picture [62 x 108] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br> PG-TO-247-3<br>**----- End of picture text -----**<br> - Application specific optimisation of inverse diode - Pb-free lead plating; RoHS compliant ## **Applications:** - Microwave Oven - Soft Switching Applications for ZCS |**Type**<br>**_V_CE**<br>**_I_C**<br>**_V_CE(sat****_),Tj=25°C_**<br>**_T_j,max**<br>**Marking**<br>IHW30N90T<br>900V<br>30A<br>1.5V<br>175°C<br>H30T90<br>**Maximum Ratings **<br>~~— FE~~~~**E**~~<br>~~E~~<br>~~E~~|**Marking**<br>H30T90<br>~~E~~|**Package**<br>PG-TO-247-3<br>~~E~~|| |---|---|---|---| |**Parameter**|**Symbol**<br>~~———~~|**Value**<br>~~———~~|**Unit**| |Collector-emitter voltage|_V_C E<br>~~———~~|900<br>~~———~~|V| |DC collector current<br>_T_C= 25°C<br>_T_C= 100°C|_I_C<br>~~|~~|60<br>30<br>~~|~~|A| |Pulsed collector current,_t_plimited by _T_jmax|_I_C p u l s<br>~~|~~<br>~~ee eee~~|90<br>~~|~~<br>~~eee~~|| |Turn off safe operatingarea_V_CE≤900V,_T_j ≤175°C|_-_<br>~~ee eee~~|90<br>~~eee~~|| |Diode forward current<br>_T_C= 25°C<br>_T_C= 100°C|_I_F<br>~~ee eee~~<br>~~|~~|23<br>13<br>~~eee~~<br>~~|~~|| |Diode pulsed current,_t_plimited by _T_jmax|_I_F p u l s<br>~~|~~|36<br>~~|~~|| |Gate-emitter voltage<br>Transient Gate-emitter voltage (_t_p< 5 ms)|_V_G E<br>~~Pf~~|±20<br>±25<br>~~Pf~~|V| |Power dissipation,_T_C= 25°C|_P_t o t<br>~~|~~|428<br>~~|~~|W| |Operating junction temperature|_T_j<br>~~|~~|-40...+175<br>~~|~~|°C| |Storage temperature|_T_s t g<br>~~+}~~|-55...+175<br>~~+}~~|°C| |Solderingtemperature, 1.6mm(0.063 in.)from case for 10s|-<br>~~+}~~|260<br>~~+}~~|| 1 J-STD-020 and JESD-022 Rev. 2.3 Nov 08 Power Semiconductors IHW30N90T q Soft Switching Series ## **Thermal Resistance** |**Thermal Resistance**||||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**| |**Characteristic**||||| |IGBT thermal resistance,<br>junction – case|_R_t h JC||0.35|K/W| |Diode thermal resistance,<br>junction – case|_R_t h JC D||1.1|| |Thermal resistance,<br>junction – ambient|_R_t h JA||40|| ## **Electrical Characteristic,** at _T_ j = 25 °C, unless otherwise specified |**Electrical Characteristic,**at_T_j= 25°|C, unless ot|herwise specified||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| ||||**min.**|**Typ. **|**max.**|| |**Static Characteristic**||||||| |Collector-emitter breakdown voltage|_V_( B R ) C E S|_V_G E=0V,_I_C=500μA|900|-|-|V| |Collector-emitter saturation voltage|_V_C E ( s a t )|_V_G E= 15V,_I_C=30A<br>_T_j=25°C<br>_T_j=150°C<br>_T_j=175°C|-<br>-<br>-|1.5<br>1.7<br>1.8|1.7<br>-<br>-|| |Diode forward voltage|_V_F|_V_G E=0V,_I_F=10A<br>_T_j=25°C<br>_T_j=150°C<br>_T_j=175°C|-<br>-<br>-|1.1<br>1.0<br>1.0|1.3<br>-<br>-|| |Gate-emitter threshold voltage|_V_G E ( t h )|_I_C=150μA,_V_C E=_V_G E|4.6|5.3|6|| |Zero gate voltage collector current|_I_C E S|_V_C E=900V,<br>_V_G E=0V<br>_T_j=25°C<br>_T_j=150°C|-<br>-|-<br>-|250<br>2500|μA| |Gate-emitter leakage current|_I_G E S|_V_C E=0V,_V_GE=20V|-|-|600|nA| |Transconductance|_g_f s|_V_C E=20V,_I_C=20A|-|26|-|S| |**Dynamic Characteristic**||||||| |Input capacitance|_C_i ss|_V_C E=25V,<br>_V_G E=0V,<br>_f_=1MHz|-|2617|-|pF| |Output capacitance|_C_o s s||-|96|-|| |Reverse transfer capacitance|_C_r ss||-|38|-|| |Gate charge|_Q_G a t e|_V_C C=720V,_I_C=30A<br>_V_G E=15V|-|280|-|nC| |Internal emitter inductance<br>measured 5mm(0.197 in.)from case|_L_E||-|13|-|nH| 2 Rev. 2.3 Nov 08 Power Semiconductors IHW30N90T q Soft Switching Series ## **Switching Characteristic, Inductive Load,** at _T_ j=25 °C |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**Typ. **|**max.**|| |**IGBT Characteristic**||||||| |Turn-on delaytime|_t_d ( o n )|_T_j=25°C,<br>_V_C C=600V,_I_C=30A,<br>_V_G E=0/15V,<br>_R_G=15Ω,|-|45|-|ns| |Rise time|_t_r||-|26|-|| |Turn-off delaytime|_t_d(o f f)||-|556|-|| |Fall time|_t_f||-|29|-|| |Turn-on energy|_E_o n||-|-|-|mJ| |Turn-off energy|_E_o f f||-|1.8|-|| |Total switchingenergy|_E_t s||-|1.8|-|| **Switching Characteristic, Inductive Load,** at _T_ j=175 °C |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**Typ. **|**max.**|| |**IGBT Characteristic**||||||| |Turn-on delaytime|_t_d(o n)|_T_j=175°C<br>_V_C C=600V,<br>_I_C=30A,<br>_V_G E=0/15V,<br>_R_G= 15Ω|-|44|-|ns| |Rise time|_t_r||-|38|-|| |Turn-off delaytime|_t_d ( o f f )||-|650|-|| |Fall time|_t_f||-|41|-|| |Turn-on energy|_E_o n||-|-|-|mJ| |Turn-off energy|_E_o f f||-|2.4|-|| |Total switchingenergy|_E_t s||-|2.4|-|| 3 Rev. 2.3 Nov 08 Power Semiconductors IHW30N90T q Soft Switching Series **==> picture [474 x 558] intentionally omitted <==** **----- Start of picture text -----**<br> t p=1µs<br>80A<br>10µs<br>T C=80°C<br>20µs<br>10A<br>60A<br>T C=110°C 50µs<br>40A 200µs<br>Ic<br>1ms<br>1A<br>20A<br>DC<br>0A<br>100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V<br>f , SWITCHING FREQUENCY V CE, COLLECTOR-EMITTER VOLTAGE<br>Figure 1. Collector current as a function of Figure 2. IGBT Safe operating area<br>switching frequency for triangular ( D = 0, T C = 25°C,<br>current ( E on = 0, hard turn-off) T j ≤175°C; V GE=15V)<br>( T j ≤ 175°C, D = 0.5, V CE = 600V,<br>V GE = 0/+15V, R G = 15Ω)<br>400W 50A<br>350W<br>40A<br>300W<br>250W 30A<br>200W<br>20A<br>150W<br>100W 10A<br>50W<br>0A<br>0W 25°C 75°C 125°C<br>25°C 50°C 75°C 100°C 125°C 150°C<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>, ,<br>I C I C<br>DISSIPATED POWER<br>, COLLECTOR CURRENT<br>tot ,<br>P I C<br>**----- End of picture text -----**<br> _T_ C, CASE TEMPERATURE **Figure 3. Power dissipation as a function of case temperature** ( _T_ j ≤ 175°C) ## _T_ C, CASE TEMPERATURE **Figure 4. Collector current as a function of** **case temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C) Rev. 2.3 Nov 08 4 Power Semiconductors IHW30N90T Soft Switching Series q **==> picture [232 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> 80A<br>V GE=20V<br>70A 15V<br>13V<br>60A<br>11V<br>50A<br>9V<br>40A 7V<br>30A<br>20A<br>10A<br>0A<br>0V 1V 2V 3V<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **==> picture [149 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br> **Figure 5. Typical output characteristic** ( _T_ j = 25°C) **==> picture [235 x 227] intentionally omitted <==** **----- Start of picture text -----**<br> 60A<br>50A<br>40A<br>30A<br>20A T J=175°C<br>25°C<br>10A<br>0A<br>0V 2V 4V 6V 8V<br>V GE, GATE-EMITTER VOLTAGE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **==> picture [196 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 7. Typical transfer characteristic<br>(VCE=20V)<br>**----- End of picture text -----**<br> **==> picture [229 x 542] intentionally omitted <==** **----- Start of picture text -----**<br> 80A<br>V GE=20V<br>70A 15V<br>13V<br>60A<br>11V<br>50A 9V<br>40A 7V<br>30A<br>20A<br>10A<br>0A<br>0V 1V 2V 3V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>Figure 6. Typical output characteristic<br>( T j = 175°C)<br>IC =60A<br>2.0V<br>1.5V IC =30A<br>IC =15A<br>1.0V<br>0.5V<br>0.0V<br>-50°C 0°C 50°C 100°C 150°C<br>T J, JUNCTION TEMPERATURE<br>COLLECTOR CURRENT<br>,<br>I C<br>EMITT SATURATION VOLTAGE<br>-<br>COLLECTOR<br>CE(sat),<br>V<br>**----- End of picture text -----**<br> **Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature** ( _V_ GE = 15V) Rev. 2.3 Nov 08 5 Power Semiconductors IHW30N90T Soft Switching Series q **==> picture [234 x 235] intentionally omitted <==** **----- Start of picture text -----**<br> 1000ns<br>t<br>d(off)<br>100ns<br>t<br>d(on)<br>t f<br>t r<br>10ns<br>0A 10A 20A 30A 40A 50A<br>IC , COLLECTOR CURRENT<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> **Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _R_ G=15Ω, Dynamic test circuit in Figure E) **==> picture [222 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>d(off)<br>100ns<br>t f<br>t<br>d(on)<br>t r<br>10ns<br>0°C 50°C 100°C 150°C<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> **==> picture [119 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br> **Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE=600V, VGE=0/15V, _I_ C=30A, _R_ G=15Ω, Dynamic test circuit in Figure E) **==> picture [227 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>1µs d(off)<br>t f<br>100ns<br>t<br>d(on)<br>t r<br>10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> **==> picture [83 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> R G, GATE RESISTOR<br>**----- End of picture text -----**<br> **Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _I_ C=30A, Dynamic test circuit in Figure E) **==> picture [233 x 237] intentionally omitted <==** **----- Start of picture text -----**<br> 7V<br>6V<br>5V<br>max.<br>4V typ.<br>3V<br>min.<br>2V<br>-50°C 0°C 50°C 100°C 150°C<br>T J, JUNCTION TEMPERATURE<br>EMITT TRSHOLD VOLTAGE<br>-<br>GATE<br>) GE(th,<br>V<br>**----- End of picture text -----**<br> **Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 0.3mA) 6 Rev. 2.3 Nov 08 Power Semiconductors IHW30N90T Soft Switching Series q **==> picture [234 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> 5mJ<br>4mJ<br>3mJ<br>E off<br>2mJ<br>1mJ<br>0mJ<br>10A 20A 30A 40A 50A<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> **==> picture [104 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> IC , COLLECTOR CURRENT<br>**----- End of picture text -----**<br> **Figure 13. Typical switching energy losses as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _R_ G=15Ω, Dynamic test circuit in Figure E) **==> picture [235 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0mJ<br>E off<br>1.5mJ<br>1.0mJ<br>0.5mJ<br>0.0mJ<br>50°C 100°C 150°C<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> **==> picture [119 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br> ## **Figure 15. Typical switching energy losses as a function of junction temperature** (inductive load, _V_ CE=600V, VGE=0/15V, _I_ C=30A, _R_ G=15Ω, Dynamic test circuit in Figure E) **==> picture [233 x 563] intentionally omitted <==** **----- Start of picture text -----**<br> 6 mJ<br>E off<br>5 mJ<br>4 mJ<br>3 mJ<br>2 mJ<br>1 mJ<br>0 mJ<br>10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω<br>R G, GATE RESISTOR<br>Figure 14. Typical switching energy losses<br>as a function of gate resistor<br>(inductive load, T J=175°C,<br>V CE=600V, VGE=0/15V, I C=30A,<br>Dynamic test circuit in Figure E)<br>3.0mJ<br>2.5mJ<br>2.0mJ<br>E off<br>1.5mJ<br>1.0mJ<br>0.5mJ<br>0.0mJ<br>400V 500V 600V 700V 800V<br>VCE , COLLECTOR-EMITTER VOLTAGE<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> **Figure 16. Typical switching energy losses as a function of collector emitter voltage** (inductive load, _T_ J=175°C, VGE=0/15V, _I_ C=30A, _R_ G=15Ω, Dynamic test circuit in Figure E) Rev. 2.3 Nov 08 7 Power Semiconductors IHW30N90T Soft Switching Series q **==> picture [476 x 238] intentionally omitted <==** **----- Start of picture text -----**<br> C iss<br>1nF<br>180V<br>10V<br>720V<br>100pF C oss<br>5V<br>C rss<br>0V 10pF<br>0nC 50nC 100nC 150nC 200nC 250nC 0V 10V 20V<br>Q GE, GATE CHARGE V CE, COLLECTOR-EMITTER VOLTAGE<br>EMITTER VOLTAGE<br>-<br>CAPACITANCE<br>c,<br>GATE<br>,<br>GE<br>V<br>**----- End of picture text -----**<br> **Figure 17. Typical gate charge** **==> picture [44 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> ( I C=30 A)<br>**----- End of picture text -----**<br> **Figure 18. Typical capacitance as a function of collector-emitter voltage** ( _V_ GE=0V, _f_ = 1 MHz) **==> picture [236 x 220] intentionally omitted <==** **----- Start of picture text -----**<br> D =0.5<br>10-1K/W 0.2<br>R , ( K / W ) τ , ( s )<br>0.1271 5.93*10 -2<br>0.1 0.1098 6.99*10 -3<br>0.0869 5.93*10 -4<br>0.05 0.0262 5.54*10 -5<br>0.02 R 1 R 2<br>0.01<br>single pulse C 1 = τ1/ R 1 C 2 = τ2/ R 2<br>10-2K/W<br>10µs 100µs 1ms 10ms 100ms<br>TRANSIENT THERMAL RESISTANCE<br>,<br>thJC<br>Z<br>**----- End of picture text -----**<br> **==> picture [69 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> t P, PULSE WIDTH<br>**----- End of picture text -----**<br> **Figure 19. IGBT transient thermal resistance** ( _D = t_ p / _T_ ) **==> picture [232 x 241] intentionally omitted <==** **----- Start of picture text -----**<br> 100K/W<br>D =0.5<br>0.2 R , ( K / W ) τ , ( s )<br>-2<br>0.0715 9.45*10<br>0.2222 2.55*10 -2<br>0.1 0.4265 3.6*10 -3<br>10-1K/W 0.364 5.1*10 -4-4<br>0.05 0.0181 1.09*10<br>R 1 R 2<br>0.02<br>0.01<br>single pulse C 1 = τ1/ R 1 C 2 = τ2/ R 2<br>10µs 100µs 1ms 10ms 100ms<br>t P, PULSE WIDTH<br>TRANSIENT THERMAL RESISTANCE<br>,<br>thJC<br>Z<br>**----- End of picture text -----**<br> **Figure 20. Typical Diode transient thermal impedance as a function of pulse width** ( _D_ = _t_ P/ _T_ ) 8 Rev. 2.3 Nov 08 Power Semiconductors IHW30N90T Soft Switching Series q **==> picture [236 x 238] intentionally omitted <==** **----- Start of picture text -----**<br> TJ =25°C<br>30A 175°C<br>20A<br>10A<br>0A<br>0.0V 0.5V 1.0V 1.5V<br>V F, FORWARD VOLTAGE<br>FORWARD CURRENT<br>,<br>I F<br>**----- End of picture text -----**<br> **Figure 21. Typical diode forward current as a function of forward voltage** **==> picture [232 x 240] intentionally omitted <==** **----- Start of picture text -----**<br> IF =20A<br>10A<br>1.0V<br>3A<br>0.5V<br>0.0V<br>-50°C 0°C 50°C 100°C 150°C<br>T J, JUNCTION TEMPERATURE<br>FORWARD VOLTAGE<br>,<br>F<br>V<br>**----- End of picture text -----**<br> **Figure 22. Typical diode forward voltage as a function of junction temperature** 9 Rev. 2.3 Nov 08 Power Semiconductors IHW30N90T q Soft Switching Series ## PG-TO247-3 **==> picture [64 x 192] intentionally omitted <==** **==> picture [254 x 392] intentionally omitted <==** **----- Start of picture text -----**<br> M<br>M<br>**----- End of picture text -----**<br> **==> picture [41 x 49] intentionally omitted <==** **==> picture [392 x 241] intentionally omitted <==** **----- Start of picture text -----**<br> MIN MAX MIN MAX<br>4.90 5.16 0.193 0.203<br>2.27 2.53 0.089 0.099<br>1.85 2.11 0.073 0.083 Z8B00003327<br>1.07 1.33 0.042 0.052<br>0<br>1.90 2.41 0.075 0.095<br>1.90 2.16 0.075 0.085<br>2.87 3.38 0.113 0.133<br>2.87 3.13 0.113 0.123<br>0 5 5<br>0.55 0.68 0.022 0.027<br>20.82 21.10 0.820 0.831 7.5mm<br>16.25 17.65 0.640 0.695<br>1.05 1.35 0.041 0.053<br>15.70 16.03 0.618 0.631<br>13.10 14.15 0.516 0.557<br>3.68 5.10 0.145 0.201<br>1.68 2.60 0.066 0.102<br>5.44 0.214<br>3 3<br>19.80 20.31 0.780 0.799 17-12-2007<br>4.17 4.47 0.164 0.176<br>3.50 3.70 0.138 0.146<br>5.49 6.00 0.216 0.236 03<br>6.04 6.30 0.238 0.248<br>**----- End of picture text -----**<br> 10 Rev. 2.3 Nov 08 Power Semiconductors IHW30N90T Soft Switching Series q **==> picture [285 x 284] intentionally omitted <==** **Figure A. Definition of switching times** **==> picture [286 x 284] intentionally omitted <==** **==> picture [189 x 328] intentionally omitted <==** **----- Start of picture text -----**<br> i,v<br>di F /dt t r r =t S + t F<br>Q r r =Q S + Q F<br>t<br>r r<br>I F t S t F<br>I Q S Q F 10% I r r m t<br>r r m 90% I di r r /dt V R<br>r r m<br>Figure C. Definition of diodes<br>switching characteristics<br>τ1 τ2 τn<br>r1 r 2 r n<br>Tj (t)<br>p(t) r1 r 2 r n<br>TC<br>**----- End of picture text -----**<br> **Figure D. Thermal equivalent circuit** **Figure B. Definition of switching losses** 11 Rev. 2.3 Nov 08 Power Semiconductors IHW30N90T q Soft Switching Series **Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 Rev. 2.3 Nov 08 Power Semiconductors
Updated at June 9, 2026
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →