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IHW30N65R5XKSA1
IGBT, 60 A, 1.35 V, 176 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:176W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 176W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 60A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.974 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
# IHW30N65R5
IHW30N65R5
## **Features:**
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voltage<br>* TRENCHSTOP TM _ technology offers:<br>- very tight parameter distribution<br>- high ruggedness and stable temperature behavior<br>- very low V CEsat and low E off<br>- easy parallel switching capability due to positive<br>temperature coefficient in V CEsat<br>* Low EMI<br>* Qualified according to JESD-022 for target<br>¢ Pb-free lead plating; ROHS compliant<br>* Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications:<br>**----- End of picture text -----**<br>
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C<br>G<br>E<br>=<br>fale<br>re Mineo,<br>4<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW30N65R5|650V|30A|1.35V|175°C|H30ER5|PG-TO247-3|
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IHW30N65R5
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## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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Rev.�2.1,��2015-12-22
IHW30N65R5
Resonant�Switching�Series
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||60.0<br>30.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||90.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||90.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||23.0<br>14.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||42.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||176.0<br>88.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.81|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||3.81|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.1,��2015-12-22
4
IHW30N65R5
Resonant�Switching�Series
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## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.35<br>1.60|1.70<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.70<br>2.00|2.10<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.30mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|35.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3690|-|pF|
|Output capacitance|_C_oes||-|34|-||
|Reverse transfer capacitance|_C_res||-|15|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=30.0A,<br>_V_GE=15V|-|153.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=13.0Ω,_R_G(off)=13.0Ω,<br>_L_σ=35nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|29|-|ns|
|Rise time|_t_r||-|17|-|ns|
|Turn-off delaytime|_t_d(off)||-|220|-|ns|
|Fall time|_t_f||-|8|-|ns|
|Turn-on energy|_E_on||-|0.85|-|mJ|
|Turn-off energy|_E_off||-|0.24|-|mJ|
|Total switchingenergy|_E_ts||-|1.09|-|mJ|
Rev.�2.1,��2015-12-22
5
IHW30N65R5
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## Resonant�Switching�Series
## **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=1100A/µs|-|95|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.90|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|28.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-2000|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=13.0Ω,_R_G(off)=13.0Ω,<br>_L_σ=35nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|28|-|ns|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|240|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|0.95|-|mJ|
|Turn-off energy|_E_off||-|0.41|-|mJ|
|Total switchingenergy|_E_ts||-|1.36|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=1100A/µs|-|114|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|3.30|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|45.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1650|-|A/µs|
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Rev.�2.1,��2015-12-22
IHW30N65R5
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100<br>TUTTE TTT ETT TT<br>a 0a not for linear use ee ee ee<br>Pe<br>=<br>x tee<br>| 10 LAU T O T|) &<br>a nn ee ee eee <<br>=) jae<br>re) a ee ee a<br>x aeh ee<br>ig<br>SLAIN<br>1<br>9 PF te LEREE L E APH 2f<br>aPT ee ee<br> ETT ETT<br>0.1<br>1 10 100 1000<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Safe operating area<br>( D =0, T C =25°C, T vj 175°C, V GE =15V, t p=1µs)<br>I C P tot<br>**----- End of picture text -----**<br>
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200<br>180 \<br>160<br>NG<br>140 [XT LE<br>120<br>Ne<br>100<br>x<br>8060 Pot fF LN |<br>4020 Pf of fd<br>0<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>**----- End of picture text -----**<br>
> Figure 2. Power **temperature** ( _T_ vj ≤ 175°C)
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70 90<br>VGE=20V<br>80 15V<br>60<br>13V<br>| yt 70 es /e<br>< 50 < 11V<br>60 9V<br>8V<br>PENCE: 40 : PERSE/ 4<br>50<br>7V<br>ee 40 6V oa<br>: 30 : NXYZ<br>30<br>20<br>8 fe ‘\ J L,<br>: NY 20<br>10<br>SYN<br>10<br>[LN] C-EEZa<br>0 PF [PE] 0 | \<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
Figure 4. Typical ( _T_ vj=25°C)
7
IHW30N65R5
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90 90<br>VGE = 20V T vj<br>— TT] / — T vj Tose =25°C /<br>80 17V 80<br>HII/ = HG<br>15V<br>Ae—/<br>70 70<br>13V<br>60 11V 60<br>9V<br>:z 50 STI| MY | AE 50 |<br>8V<br>oe) / Wa oe) /<br>ccO 40 7V ee ee /// /1 A4 ccO 40 i<br>O O<br>Ww 6V Ww<br>30 30<br>O 5V O<br>LUN 20 RR 20<br>10 10<br>ee) Zee eeeee<br>0 pAee NL 0 —_—<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 3 4 5 6 7 8<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>I C I C<br>**----- End of picture text -----**<br>
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2.00 1000<br>IC = 7A aaa<br>IC = 15A a ee<br>S 1.75 = IC = 30A a ee<br>Ss ee ee eeee ee<br>2 _- i td(off) soy ee ee ee<br>E 1.50 — tf<br>: — e 100 f= ttd(on)r {|<br>< |<br>1.25<br>“” OD Se<br>[a uw= a ae e<br>————<br>oei 1.00 oO ee ee<br>fi a ee<br>raWw5 0.75 e-o 10 nn\\ nrza~~. a ae<br>oq(e) 0.50 po_<br>O| a eeee<br>0.25 a a<br>0.00 1<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =175°C, _V_ CE=400V, _V_ GE =0/15V, _R_ Gon=13 Ω , _R_ Goff=13 Ω , test circuit in Figure E)
8
IHW30N65R5
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td(off) td(off)<br>1000 tf tf<br>td(on) 1000 td(on)<br>1 tr a H tr [_<br>E ee a a<br>a a ee ee ee eee a a<br>eo e t<br>e |g<br>Ww 100 a SS ES ESSS Ww<br>100<br>g= ee g= |Ee| | | |<br>0 eeee [_<br>> a es ee ee er ee 9 a a<br>SeL Seeey7 LEB<br>6 bole<br>=5 — TT —oa 7] $0a eeeanA ne<br>. 10 PN epee<br>[_ . 10 ———— ee<br>a<br>aa a [_$<br>ee es ee es es<br>a ee<br>1 1<br>10 20 30 40 50 60 70 80 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br>
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Figure 9. Typical<br>resistance<br>**----- End of picture text -----**<br>
_V_ GE =0/15V, Figure E)
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T vj =175°C, V CE=400V,<br>I C<br>**----- End of picture text -----**<br>
Figure 10.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =30A, _R_ Gon=13 Ω , _R_ Goff=13 Ω , dynamic circuit in Figure E)
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6.0 3.0<br>typ. Eoff<br>5.5 min. Eon<br>Ww max. 2.5 Ets /<br>5.0<br><a =)E /,<br>_I ~ =<br>4.5<br>_ ys (ep) 2.0 7<br>Oo Tos Oo /<br>r 4.0 SMS a /<br>x 3.5 ~~ SAL~~. x 1.5 , 7/<br>3.0<br>i —_—~ ——~ oS) / 7<br>1.0<br>uwoj 2.5 ~~ ~~N oOE= / / 7 a<br>2.0<br>0.5 -<br>6 - 7a LA 4<br>1.5<br>| | ara<br>1.0 0.0<br>sf 47<br>25 50 75 100 125 150 0 10 20 30 40 50 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.3mA)
Figure 12.
(inductive load, _T_ vj =175°C, _V_ CE=400V, _V_ GE =0/15V, _R_ Gon=13 Ω , _R_ Goff=13 Ω , test circuit in Figure E)
9
IHW30N65R5
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2.50 1.75<br>Eoff Eoff<br>2.25 Eon Eon<br>Ets Ets<br>1.50<br>2.00<br>P ee P e<br>e 1.75 | |le ds 1.25 ae<br>g at g<br>1.50<br>eter Ee 1.00 epry<br>pipes<br>1.25<br>ff = ff -<br>0.75<br>1.00<br>Z poor Z<br>L L<br>sy) 0.75 | |Ld<br>0.50<br>B Lr a<br>0.50<br>Pee eee<br>0.25<br>0.25<br>FEEEEER} «EEE<br>0.00 0.00<br>10 20 30 40 50 60 70 80 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistance function of junction temperature<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,<br>V GE =0/15V, I C =30A, dynamictest circuit in I C =30A, R Gon=13 Ω , R Goff=13 Ω , dynamic test<br>Figure E) circuit in Figure E)<br>15 1E+4<br>14 V CC<br>V CC<br>a LS<br>13<br>12 Cies<br>fe [ee] [e] [/] Coes [a] SS<br>1000 Cres<br>eProp 11 fe Eee<br>10<br>a reee<br>9<br>pg R e<br>8<br>i 2 [EP<br>100<br>7 7 Ane<br>6<br>a¢ [| pe a| ¢ ReeSSS<br>5<br>6 4 |fo}A rc 10 Py | Po paet et<br>3 p/} | | | ==<br>An<br>2<br>1 i/ ee a ee eeee<br>0 py || | | | | 1 aPt;a tT TT | yt<br>0 20 40 60 80 100 120 0 3 6 9 12 15 18 21 24 27 30<br>Q G , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 15. Typical ( _I_ C=30A)
Figure 16. ( _V_ GE
10
IHW30N65R5
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**----- Start of picture text -----**<br>
1<br>rn eT ee e 0<br>o=gO a ee itNNN ee eA 1 eee<br>8= PLCoenL =8 1 HTline )<br>Ry HE] = HHL} gg EL<br>D = 0.5 D = 0.5<br>: ze) lis BHA<br>0.2 0.2<br>= ei P07 ene oe HHH<br>0.1 0.1<br>AT = COE enrich<br>0.05 0.05<br>UIA 0.1 ll, Fee<br>na cee ne 0.02 1 a eeeI 0.02<br>= ECA rr 0.01 Ht = mal HA eee 0.01<br>5Z D>alii ceaee Ee 0.1 Cerae ean| eT<br>single pulse single pulse<br>wl)Z ee)nh)ae) Za ASa eateeeerrraee| tL Ail)qi op)z2 e CattreeCnrtia te ottCont<br>A| |ect Tie ee || 2TE Pil) ee an!<br>i: 1 2 3 4 5 i: 1 2 3 4 5<br>ri[K/W]: 1.2E-3 0.026208 0.325117 0.273429 0.185068 ri[K/W]: 1.8E-3 0.265343 0.526929 2.350517 0.280098<br>τ i[s]: 5.0E-7 1.7E-5 1.1E-4 7.0E-4 4.5E-3 τ i[s]: 6.0E-7 6.3E-5 4.5E-4 4.8E-3 0.02441<br>0.01 hl 0.01 Hl |<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 17. IGBT transient thermal impedance as a Figure 18. Diode transient thermal impedance as a<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
( _D_ = _t_ p/T)
( _D_ = _t_ p/T)
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200 SS re | 4.0 Ld<br>T vj I F T vj I F<br>—- T vj =175°C, I F =30A —- T vj =175°C, I F =30A _-<br>Eas<br>175 3.5<br>\ \ |_ Ess. —_<br>= S<br>150 3.0<br>my N 4 a<br>= 125 aN 5: 2.5 Za<br>35 100 Ww _| _ >- S 2.0 4<br>Plo) keel] e |<br>oD: 75 Pf ft _ rT: 1.5 | |a -<br>iy ><br>or 50 iu 1.0<br>25 0.5<br>0 0.0<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>dI F /dt , DIODE CURRENT SLOPE [A/us] dI F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19. Typical of diode ( _V_ R=400V)
Figure 20.
( _V_ R=400V)
11
IHW30N65R5
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60 | 0 eS|<br>T vj I F T vj I F<br>——- T vj ==175°C,256, I F =30A=30A a -500 = > —- T vj ==175°C,25°6, I F =308]=30A<br>50<br>7 <= 1000 > \<br><= —_ EIS N OT<br>4 ° -1500<br>or 7 LL ~<br>40<br>oO> y ie -2000 \ ~ > ~<br>LL<br>> 30 4 -2500<br>:<br>im 4 we<br>-3000<br>O —t wie {| | | yy<br>Ww ‘ TT :<br>rt 20 7 Y<br>Ww Ww -3500<br>ffow ara)O<br>-4000<br>10<br>-4500<br>0 -5000<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>dI F /dt , DIODE CURRENT SLOPE [A/us] dI F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>90 Ld 2.50<br>— T vj =25°C / — I F =7A<br>—- T vj =175°C / —- I F =15A<br>80 TE P7 2.25 --- I F =30A<br>70<br>EV I) 2.00 Fa ery<br>i 60 / Ww —_ -_--7<br>imz // 0)< 1.75 ---—<br>5 50 / Q<br>ro) / a 1.50<br>zt 40 <x<br>x 1.25<br>30<br>1.00<br>20<br>0.75<br>10 Ty LEE<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
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IHW30N65R5
Resonant�Switching�Series
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## **Package Drawing PG-TO247-3**
13
Rev.�2.1,��2015-12-22
IHW30N65R5
Resonant�Switching�Series
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## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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Rev.�2.1,��2015-12-22
IHW30N65R5
## IHW30N65R5
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2015-06-01|Preliminary|
|2.1|2015-12-22|Final data sheet|
## party.
## **Warnings**
15
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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