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IHW30N160R5XKSA1
IGBT, 60 A, 1.85 V, 263 W, 1.6 kV, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:263W; Collector Emitter Voltage V(br)ceo:1.6kV; Transistor Case Style:TO-247; No. of Pi
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 263W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 60A
- Collector Emitter Voltage Max: 1.6kV
- Collector Emitter Saturation Voltage: 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.29 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
> **IHW30N160R5** Infineon **Reverse-Conducting IGBT** ane Ces ## **Reverse-Conducting IGBT with monolithic body diode** ## **Features** - VCE = 1600 V - IC = 30 A - Powerful monolithic body diode with low forward voltage - Very tight parameter distribution - High ruggedness, temperature stable behavior - Low VCEsat - Easy parallel switching capability due to positive temperature coefficient in VCEsat - Low EMI - Pb-free lead plating; RoHS compliant; halogen free (according IEC 61249-2-21) **==> picture [41 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>C<br>E<br>**----- End of picture text -----**<br> - Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ ## **Potential applications** - Induction cooking - Microwave ovens ## **Product validation** - Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 **Description** C G E ~~GG~~ **Type Package Marking** IHW30N160R5 PG-TO247-3 H30SR5 Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.10 2022-04-05 **IHW30N160R5 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5| |**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**5**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12| |**6**|**Testing conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15| Datasheet Revision 1.10 2022-04-05 2 **IHW30N160R5 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||||| |---|---|---|---|---|---|---| |**Table 1**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Internal emitter<br>inductance measured 5<br>mm (0.197 in) from case|_L_E|||13.0||nH| |Storage temperature|_T_stg||-55||175|°C| |Soldering temperature||wave soldering 1.6 mm (0.063 in.) from case<br>for 10 s|||260|°C| |Mounting torque|_M_|M3 screw Maximum of mounting process: 3|||0.6|Nm| |Thermal resistance,<br>junction-ambient|_R_th(j-a)||||40|K/W| ## **2 IGBT** |**2**<br>**IGBT**|**2**<br>**IGBT**|**2**<br>**IGBT**|||| |---|---|---|---|---|---| |**Table 2**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CE|_T_vj≥ 25 °C||1600|V| |DC collector current,<br>limited by Tvjmax|_I_C||_T_c= 25 °C|60|A| ||||_T_c= 100 °C|39|| |Pulsed collector current, tp<br>limited by Tvjmax|_I_Cpulse|||90|A| |Non repetitive peak<br>collector current_1)_|_I_CSM|||200|A| |Turn-of safe operating<br>area||_V_CE= 1600 V,_t_p= 1 µs,_T_vj≤ 175 °C||90|A| |Gate-emitter voltage|_V_GE|||±20|V| |Transient gate-emitter<br>voltage|_V_GE|_t_p≤ 10 µs,_D_< 0.01||±25|V| |Power dissipation|_P_tot||_T_c= 25 °C|263|W| ||||_T_c= 100 °C|131.5|| > _1)_ capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3 µs |**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>breakdown voltage|_V_BRCES|_I_C= 0.5 mA,_V_GE= 0 V|1600|||V| **(table continues...)** Datasheet Revision 1.10 2022-04-05 3 **IHW30N160R5 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT** |**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CEsat|_I_C= 30 A,_V_GE= 15 V|_T_vj= 25 °C||1.85|2.15|V| ||||_T_vj= 125 °C||2.2||| ||||_T_vj= 175 °C||2.4||| |Gate-emitter threshold<br>voltage|_V_GEth|_I_C= 0.75 mA, VCE= VGE||4.5|5.1|5.8|V| |Zero gate-voltage collector<br>current|_I_CES|_V_CE= 1600 V,_V_GE= 0 V|_T_vj= 25 °C|||100|µA| ||||_T_vj= 175 °C||800||| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V||||100|nA| |Transconductance|_g_fs|_I_C= 30 A,_V_CE= 20 V|||20.5||S| |Input capacitance|_C_ies|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||1500||pF| |Output capacitance|_C_oes|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||42||pF| |Reverse transfer<br>capacitance|_C_res|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||38||pF| |Gate charge|_Q_G|_I_C= 30 A,_V_GE= 15 V,_V_CC=|1280 V||205||nC| |Turn-of delay time|_t_dof|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_Gon= 10 Ω,_R_Gof= 10 Ω,<br>_L_σ= 175 nH,_C_σ= 40 pF|_T_vj= 25 °C,<br>_I_C= 30 A||290||ns| ||||_T_vj= 175 °C,<br>_I_C= 30 A||330||| |Fall time (inductive load)|_t_f|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_Gon= 10 Ω,_R_Gof= 10 Ω,<br>_L_σ= 175 nH,_C_σ= 40 pF|_T_vj= 25 °C,<br>_I_C= 30 A||47||ns| ||||_T_vj= 175 °C,<br>_I_C= 30 A||81||| |Turn-of energy|_E_of|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_Gon= 10 Ω,_R_Gof= 10 Ω,<br>_L_σ= 175 nH,_C_σ= 40 pF|_T_vj= 25 °C,<br>_I_C= 30 A||2||mJ| ||||_T_vj= 175 °C,<br>_I_C= 30 A||3||| |Total switching energy|_E_ts|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_Gon= 10 Ω,_R_Gof= 10 Ω,<br>_L_σ= 175 nH,_C_σ= 40 pF|_I_C= 30 A||0.35||mJ| ||||_I_C= 30 A||1.27||| |Sof turn-of energy|_E_of|_V_CC= 600 V,<br>_dv/dt_= 300 V/µs|_T_vj= 25 °C||0.35||mJ| ||||_T_vj= 175 °C||1.27||| |IGBT thermal resistance,<br>junction to case|_R_thjc|||||0.57|K/W| |Operating junction<br>temperature|_T_vj|||-40||175|°C| Datasheet Revision 1.10 2022-04-05 4 **IHW30N160R5 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** _Note: Electrical Characteristic, at T_ vj _= 25°C, unless otherwise specified._ ## **3 Diode** |**3**<br>**Diode**|**3**<br>**Diode**|**3**<br>**Diode**|||| |---|---|---|---|---|---| |**Table 4**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM|_T_vj≥ 25 °C||1600|V| |Diode forward current,<br>limited by Tvjmax|_I_F||_T_c= 25 °C|55|A| ||||_T_c= 100 °C|36|| |Diode pulsed current,<br>limited by Tvjmax|_I_Fpulse|||90|A| |**Table 5**<br>**Characteristic values**|**Table 5**<br>**Characteristic values**|**Table 5**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Diode forward voltage|_V_F|_I_F= 30 A|_T_vj= 25 °C||2|2.3|V| ||||_T_vj= 125 °C||2.4||| ||||_T_vj= 175 °C||2.6||| |Diode thermal resistance,<br>junction to case|_R_thjc|||||0.57|K/W| |Operating junction<br>temperature|_T_vj|||-40||175|°C| _Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet._ Datasheet Revision 1.10 2022-04-05 5 **IHW30N160R5 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **4 Characteristics diagrams** **==> picture [540 x 628] intentionally omitted <==** **----- Start of picture text -----**<br> Reverse bias safe operating area Power dissipation as a function of case temperature<br>IC = f(VCE) Ptot = f(Tc)<br>D = 0 , Tvj ≤ 175 °C, VGE = 15 V, Tc = 25 °C Tvj ≤ 175 °C<br>275<br>100 250<br>225<br>200<br>175<br>10<br>150<br>125<br>100<br>1<br>75<br>50<br>25<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>Collector current as a function of heatsink Typical output characteristic<br>temperature IC = f(VCE)<br>IC = f(Tc) T = 25 °C<br>vj<br>Tvj ≤ 175 °C, VGE ≥ 15 V<br>60 90<br>80<br>50<br>70<br>40 60<br>50<br>30<br>40<br>20 30<br>20<br>10<br>10<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5 6<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2022-04-05 6 **IHW30N160R5 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical output characteristic** IC = f(VCE) T = 150 °C vj ## **Typical transfer characteristic** IC = f(VGE) VCE = 20 V **==> picture [540 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 90 90<br>80 80<br>70 70<br>60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0 1 2 3 4 5 6 2 4 6 8 10 12<br>Typical collector-emitter saturation voltage as a Typical switching times as a function of collector<br>function of junction temperature current<br>VCEsat = f(Tvj) t = f(IC)<br>VGE = 15 V VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω<br>3.5<br>3.0 1000<br>2.5<br>2.0 100<br>1.5<br>1.0 10<br>0.5<br>0.0 1<br>25 50 75 100 125 150 175 10 20 30 40 50 60 70 80 90<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2022-04-05 7 **IHW30N160R5 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching times as a function of gate resistor** t = f(RG) IC = 30 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>1<br>10 15 20 25 30 35 40 45 50<br>**----- End of picture text -----**<br> ## **Gate-emitter threshold voltage as a function of junction temperature** VGEth = f(Tvj) IC = 0.75 mA **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 6.0<br>5.5<br>5.0<br>4.5<br>4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of junction temperature** t = f(Tvj) IC = 30 A, VCC = 600 V, VGE = 0/15 V, RG = 10 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of collector current** E = f(IC) VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>10 20 30 40 50 60 70 80 90<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2022-04-05 8 **IHW30N160R5 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching energy losses as a function of gate resistor** E = f(RG) ## **Typical switching energy losses as a function of junction temperature** E = f(Tvj) **==> picture [540 x 598] intentionally omitted <==** **----- Start of picture text -----**<br> IC = 30 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V IC = 30 A, VCC = 600 V, VGE = 0/15 V, RG = 10 Ω<br>5.0 4.0<br>4.5<br>3.5<br>4.0<br>3.0<br>3.5<br>3.0 2.5<br>2.5<br>2.0<br>2.0<br>1.5<br>1.5<br>1.0 1.0<br>10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 175<br>Typical switching energy losses as a function of Typical resonant switching energy losses as a function<br>collector emitter voltage of collector current<br>E = f(VCE) E = f(IC)<br>IC = 30 A, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω VCC = 600 V, VGE = 0/15 V, RG = 10 Ω<br>7 2.50<br>2.25<br>6<br>2.00<br>1.75<br>5<br>1.50<br>4 1.25<br>1.00<br>3<br>0.75<br>0.50<br>2<br>0.25<br>1 0.00<br>300 400 500 600 700 800 900 1000 1100 1200 0 10 20 30 40 50 60<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2022-04-05 9 **IHW30N160R5 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical gate charge** VGE = f(QGE) IC = 30 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 40 80 120 160 200 240<br>**----- End of picture text -----**<br> **IGBT transient thermal impedance as a function of pulse width** Zth = f(tp) D = tp/T **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>**----- End of picture text -----**<br> **Typical capacitance as a function of collector-emitter voltage** C = f(VCE) f = 1000 kHz, VGE = 0 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>0 5 10 15 20 25 30<br>**----- End of picture text -----**<br> **Diode transient thermal impedance as a function of pulse width** Zth = f(tp) D = tp/T **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2022-04-05 10 **IHW30N160R5 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **Typical diode forward current as a function of forward Typical diode forward voltage as a function of voltage junction temperature** IF = f(VF) VF = f(Tvj) **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 90 5.0<br>80 4.5<br>4.0<br>70<br>3.5<br>60<br>3.0<br>50<br>2.5<br>40<br>2.0<br>30<br>1.5<br>20<br>1.0<br>10 0.5<br>0 0.0<br>0 1 2 3 4 5 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2022-04-05 11 **IHW30N160R5 Reverse-Conducting IGBT** **5 Package outlines** **==> picture [105 x 47] intentionally omitted <==** ## **5 Package outlines** **==> picture [190 x 13] intentionally omitted <==** **----- Start of picture text -----**<br> Package Drawing PG-TO247-3<br>**----- End of picture text -----**<br> **==> picture [397 x 364] intentionally omitted <==** **==> picture [262 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 4.70 5.30<br>A1 2.20 2.60<br>A2 1.50 2.50<br>b 1.00 1.40<br>b1 1.60 2.41 DOCUMENT NO.<br>b2 2.57 3.43 Z8B00003327<br>c 0.38 0.89 REVISION<br>D 20.70 21.50 06<br>D1 13.08 17.65<br>D2 0.51 1.35 SCALE 3:1<br>E 15.50 16.30 0 1 2 3 4 5mm<br>E1 12.38 14.15<br>E2 3.40 5.10<br>E3 1.00 2.60 EUROPEAN PROJECTION<br>e 5.44<br>L 19.80 20.40<br>L1 3.85 4.50<br>P 3.50 3.70<br>Q 5.35 6.25 ISSUE DATE<br>S 6.04 6.30 25.07.2018<br>**----- End of picture text -----**<br> **Figure 1** Datasheet Revision 1.10 2022-04-05 12 **IHW30N160R5 Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **6 Testing conditions** **==> picture [185 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 6 Testing conditions<br>**----- End of picture text -----**<br> **==> picture [502 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>Figure D.<br>10% V GE<br>t<br>I C (t)<br>CC<br>2% I C t<br>V CE (t) Figure E. Dynamic test circuit<br>Parasitic inductance Ls,<br>parasitic capacitor Cs,<br>relief capacitor C ,r<br>t 2 t 4 (only for ZVT switching)<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V C C<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 1.10 2022-04-05 13 **IHW30N160R5 Reverse-Conducting IGBT** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |V2.1|2018-08-28|Final Data Sheet| |V2.2|2019-09-19|additional parameter in maximum ratings table: non repetitive peak<br>collector current| |n/a|2020-11-30|Datasheet migrated to a new system with a new layout and new revision<br>number schema: target or preliminary datasheet = 0.xy; final datasheet =<br>1.xy| |1.10|2022-04-05|“Forward bias safe operating area” diagram renamed to “Reverse bias<br>safe operating area”<br>Tvjcondition in table “Maximum rated values ” of IGBT at “Turn of safe<br>operating area” changed to 175°C| Datasheet Revision 1.10 2022-04-05 14 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2022-04-05 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2022 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-AAL233-003** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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