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IHW30N135R5XKSA1
IGBT, 60 A, 1.65 V, 330 W, 1.35 kV, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:330W; Collector Emitter Voltage V(br)ceo:1.35kV; Transistor Case Style:TO-247; No. of Pi
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 330W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 60A
- Collector Emitter Voltage Max: 1.35kV
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.13 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
IHW30N135R5 **==> picture [438 x 255] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>monolithic body diode with low forward voltage<br>for soft commutation<br>_ technology offering:<br>tight parameter distribution<br>G<br>ruggedness, temperature stable behavior<br>E<br>CEsat<br>parallel switching capability due to positive<br>coefficient in V CEsat<br>EMI<br>according to JESD-022 for target applications 2<br>lead plating; ROHS compliant a,<br>free (according to IEC 61249-2-21) rp tinegy<br>product spectrum and PSpice Models: “Sg<br>cooking<br>ovens G<br>C<br>E<br>**----- End of picture text -----**<br> ## **Features:** http://www.infineon.com/igbt/ ## **Applications:** |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IHW30N135R5|1350V|30A|1.65V|175°C|H30PR5|PG-TO247-3| Datasheet www.infineon.com 2018-09-19 IHW30N135R5 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 2 V�2.2 2018-09-19 Datasheet IHW30N135R5 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||1350|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||60.0<br>30.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||90.0|A| |Turn off safe operating area<br>_V_CE≤1350V,_T_vj≤175°C,_t_p=1µs|-||90.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||60.0<br>30.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||90.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±25|V| |Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||330.0<br>165.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.45|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.45|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 3 V�2.2 2018-09-19 Datasheet IHW30N135R5 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1350|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.95<br>2.05|1.95<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.85<br>2.10<br>2.25|2.05<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.75mA,_V_CE=_V_GE|5.1|5.8|6.4|V| |Zero gate voltage collector current|_I_CES|_V_CE=1350V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>630|100<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|23.0|-|S| |Integratedgate resistor|_r_G|||none||Ω| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1810|-|pF| |Output capacitance|_C_oes||-|50|-|| |Reverse transfer capacitance|_C_res||-|40|-|| |Gate charge|_Q_G|_V_CC=1080V,_I_C=30.0A,<br>_V_GE=15V|-|235.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=600V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|310|-|ns| |Fall time|_t_f||-|120|-|ns| |Turn-off energy|_E_off||-|1.40|-|mJ| |Turn-off energy, soft switching|_E_off|_dv/dt_=200.0V/µs|-|0.17|-|mJ| V�2.2 2018-09-19 Datasheet 4 IHW30N135R5 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-off delaytime|_t_d(off)|_T_vj=175°C,<br>_V_CC=600V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|385|-|ns| |Fall time|_t_f||-|295|-|ns| |Turn-off energy|_E_off||-|2.70|-|mJ| |Turn-off energy, soft switching|_E_off|_dv/dt_=200.0V/µs|-|0.57|-|mJ| V�2.2 2018-09-19 Datasheet 5 IHW30N135R5 **==> picture [474 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 100 330<br>a 297<br>not for linear use<br>Po y \<br>ar<br>264<br>a a Te<br>231<br>10 ee [ ee] [eee] Zz \<br>5= FFATIMI) & [NV}] } 4 + —<br>198<br>3 PPE TTi)<br>or A Nee<br>165<br>m4 TT TT OE ETT TE TTT EE<br>2 TMI<br>TTI TMT) @ 132 Py |OKT<br>SPM 1 Tf<br>Q eeeIE LEMLEL) 2 aaa\<br>99<br>a<br>a<br>66<br>a a Ne aaaw<br>33<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE =15V; t p=1µs) temperature<br>( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br> **==> picture [469 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 60 90<br>VGE=20V<br>17V<br>80<br>50 15V<br>===<br>70 feel 13V /24ann<br>11V<br>40 60<br>9V<br>z 2 | =. eee<br>i e 50 | 7V AMIWP<br>or 30 or 5V<br>:Ss 40 | \ W<br>:: 20 ff 30 \fA<br>; : J<br>Sf<br>20<br>10<br>fv<br>10<br>feAn/ \\ e<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br> 6 Datasheet 2018-09-19 IHW30N135R5 **==> picture [471 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 90 90<br>VGE=20V Tvj = 25°C<br>Tvj =175°C<br>80 17V 80<br>SU | (Ef<br>15V<br>70 70<br>t/a 13V ee e e<br>e) —. <— f, / ;<br>11V<br>E 60 DYE Cos 60 |<br>9V<br>PLw 50 7V LONZENey=~ Uh ea Ew 50 Lh||!<br>afa<br>5V<br>s: 40 | \N#7 je 40 |p<br>PL \ MW :<br>3 30 Ape Le 30 bf<br>en)AY NOa<br>20 pLJY », \ 20 Cf<br>10 ‘ 10<br>APNAT | iN Le<br>0 0<br>0 1 2 3 4 5 0 2 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>3.5 1000 aa<br>IC = 15A I td(off) po<br>IC = 30A | tf a<br>IC = 60A<br>= oe<br>S a eeee<br>3.0<br>Z e e ee ee<br>2.5<br>(a Prod =<br>100<br>= uaee =<br>aT aa g= a eea a<br>_ O ee se<br>O 2.0 = = Ee a es<br>im5 _b-e- = a eeee ee<br>non wero ee aee ee ee ee<br>1.5<br>: 1.0 TTT 10 pt | ft ty<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =175°C, V CE=600V,=600V,<br>I C I C<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br> (inductive load, _T_ vj =175°C, _V_ CE=600V,=600V, _V_ GE =0/15V, _r_ G=10 Ω , Dynamic test Figure E) Datasheet 7 2018-09-19 IHW30N135R5 **==> picture [474 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Mm— td(off) a t a d(off) a<br>tf I tf a ee ee ee<br>= —————<br>1000 7 (a Ds<br>pj | | | |} ee Popf ff fj<br>g& P a ee eeoea oee ee ee Fe- =<br>2 Po 2 wero —_<br>a ee = ae<br>g 100<br>== a ee ee ee<br>Ri 100 aaiee<br>=eeon a ee<br>a ee ee ee<br>a eeDe ee ee GO<br>FEES Ee<br>10 10<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =30A, Dynamic test circuit in I C =30A, r G=10 , Dynamic test circuit in<br>Figure E) Figure E)<br>7.0 6<br>typ. Eoff<br>min.<br>max.<br>5<br>y 6.2 —~» = |<br>A SS 3<br>oO SSL a<br>a_ SA . 2 4 VA<br>ce) 5.4 N . | y<br>2 WN ro)<br>= ~ s SAS Zz 3 /<br>a ~ . Ww<br>WW 4.6 > I~ . Oo<br>iu=T ~ N NX~ NN, Zz=O= 2 y<br>Lu s =<br>,o~ 3.8 —a~ 1<br>3.0 0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60<br>T vj ,JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=0.75mA) (inductive load, T vj =175°C, V CE=600V,=600V,<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [151 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T vj =175°C, V CE=600V,=600V,<br>V GE =0/15V, r G=10 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> 8 Datasheet 2018-09-19 IHW30N135R5 **==> picture [518 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 3.75 3.0<br>E off Eoff<br>- 3.50 - LO - 2.6<br>on on<br>Ww Ww<br>7) 7)<br>oo<br>g<br>—! 3.25 / —!g 2.2<br>O O<br>na na<br>Ww Ww<br>Zz Zz<br>Ww Ww<br>2) 3.00 / 2) 1.8<br>ZzLL/ Zz<br>:<br>E<br>E J :<br>2.75 1.4<br>2.50 1.0<br>0 10 20 30 40 50 60 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =30A, Dynamic test circuit in I C =30A, r G=10 , Dynamic test circuit in<br>Figure E) Figure E)<br>4.5 1.2<br>E off Tvj = 25°C<br>1.1 Tvj = 175°C<br>EQN = | ;<br>4.0 1.0<br>5 a a 5ee ee e<br>es 0.9<br>2 3.5 0.8<br>a<br>>> 0.7<br>©/<br>a<br>im 3.0 / ing 0.6 /<br>Zz uwZz Y,<br>fo UY) |<br>2/2 0.5<br>= 2.5 Ws Pe 0.4 7 4<br>0.3<br>a ae<br>2.0 0.2<br>0.1<br>ee ee ee eeeA<br>ee<br>1.5 0.0<br>400 500 600 700 800 900 1000 0 10 20 30 40 50 60<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] I C , COLLECTOR CURRENT [A]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical turn off switching energy loss for<br>function of collector emitter voltage soft switching<br>(inductive load, T vj =175°C, V GE=0/15V, (inductive load, V CE =600V, V GE=0/15V,<br>E E<br>E E<br>**----- End of picture text -----**<br> **==> picture [56 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> I C =30A, r G=10<br>Figure E)<br>**----- End of picture text -----**<br> _r_ G=10 9 Datasheet 2018-09-19 IHW30N135R5 **==> picture [477 x 643] intentionally omitted <==** **----- Start of picture text -----**<br> 16 es 1E+4 a<br>V CC Cies<br>H a<br>V CC Coes<br>14 —— — = 1080V / / II Cres aa eeeeee eeee ee<br>:> 12 , 1000 TT | fF fs if<br>F | ft<br>10<br>re)S — | || : &OW ahsa<br>WW 8 e ee ee<br>6<br>Et See- SiS<br>x 100 a a a se<br>><br>4 a eeeereee ee eee<br>2<br>ee ee ee ee ee<br>0 10<br>0 50 100 150 200 250 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=30A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>hhh ooo Ohooo<br>OTT TT TTT eet ttt PE Eo<br>ETI ETM TTT IM ee LUTTE TT PTT TUTTE TTI er TTT<br>== TT T TI ee Al |<br>lu 0.1 TIT EAC D = 0.5 = 0.1 U A D = 0.5<br>O FAHIIIT eeTine NlHH Th SeeIILSetiieeey’ TN aT Nl<br>z | setae eat eTet<br>0.2 0.2<br>=z | a 4S5DR SG LOT TO z eA LOTT<br>=2) Stesa Sei|en 0.1 stmt =z SeeetoAiEPTie 0.1 HH<br>0.05 0.05<br>: Tg A EL | 2) A CTT TT<br>ee 0.02 a) Ree 0.02<br>2 0.01 (lec4 0.01 taUM 2 0.01 eiLUMea 0.01 tH<br>Wwx|A a single pulse aa single pulse<br>A a a<br>-Z UATE AINE TAIN AE CEI CET AT a<br>2 TA IN a Re<br>2 0.001 a M p c e ee ou) 23 0.001 On)U TIMe ® Re nt)<br>AAMCPI TTTCc, Yie, oicette, = T PAACO| hl Tc ie, Cates Ul<br>ca/| i: 1 2 3 4 FA a A i: 1 2 3 4<br>ri[K/W]: 6.5E-3 0.1328125 0.1953125 0.1158854 ri[K/W]: 0.03036972 0.1122227 0.13125 0.1761444<br>τ i[s]: 9.0E-6 2.1E-4 3.2E-3 0.016711 τ i[s]: 3.6E-5 10.0E-5 2.3E-3 0.03551<br>1E-4 a d LTT TTT TTT Ti TT TT T 1E-4 | A a<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>C<br>GE<br>V<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br> > Figure 19. IGBT ( _D_ = _t_ p/T) Figure 20. ( _D_ = _t_ p/T) 10 Datasheet 2018-09-19 IHW30N135R5 **==> picture [474 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> 90 ee | / 4.0<br>Tvj = 25°C IF = 15A<br>80 EJ}a Tvj = 175°C / IIFF = 30A = 60A<br>3.5<br>/<br>70<br>/ oat<br>we<br>< 5 we<br>5 60 am 3.0 oon<br>/ < aa<br>or / O --<br>ag 50 a ae<br>3 / > Pe<br>/ ra 2.5<br>ra 40 a L<br>< / <<br>= = _—<br>9 30 2 2.0 ae<br>20<br>1.5<br>10<br>/<br>iy Tt Let<br>0 1.0<br>0 1 2 3 4 5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 21. Typical diode forward current as a function Figure 22. Typical diode forward voltage as a function<br>I F V F<br>**----- End of picture text -----**<br> 11 Datasheet 2018-09-19 IHW30N135R5 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Package Drawing PG-TO247-3** 12 V�2.2 2018-09-19 Datasheet IHW30N135R5 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 13 V�2.2 2018-09-19 Datasheet IHW30N135R5 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Revision�History** IHW30N135R5 ## **Revision:�2018-09-19,�Rev.�2.2** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |2.1|2018-04-17|Final Datasheet| |2.2|2018-09-19|Added thermal network on Fig.19 & 20| 14 V�2.2 2018-09-19 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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