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IHW30N135R3FKSA1
IGBT, 60 A, 1.65 V, 349 W, 1.35 kV, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:1.35kV; Transistor Case Style:TO-247; No. o
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 349W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 60A
- Collector Emitter Voltage Max: 1.35kV
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 4.12 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
# IHW30N135R3 IHW30N135R3 **==> picture [469 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Features: C<br>* Offers new higher breakdown voltage to 1350V for improved<br>reliability<br>* Powerful monolithic body diode with low forward voltage<br>designed for soft commutation only<br>G<br>* TRENCHSTOP_ technology offering:<br>E<br>- very tight parameter distribution<br>- high ruggedness, temperature stable behavior<br>- low V CEsat<br>- easy parallel switching capability due to positive —<br>CEsat<br>temperature coefficient in V G ppp<br>* Low EMI 70.3, f0On<br>* Qualified according to JESD-022 for target applications<br>¢ Pb-free lead plating; ROHS compliant , &<br>¢ Halogen free (according to IEC 61249-2-21) a<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>G<br>C<br>E<br>**----- End of picture text -----**<br> ## **Applications:** |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IHW30N135R3|1350V|30A|1.65V|175°C|H30R1353|PG-TO247-3| 2 IHW30N135R3 **==> picture [146 x 65] intentionally omitted <==** ## Resonant�Switching�Series ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 3 Rev.�2.2,��2015-01-26 IHW30N135R3 Resonant�Switching�Series **==> picture [146 x 65] intentionally omitted <==** ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emitter voltage|_V_CE||1350|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||60.0<br>30.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||90.0|A| |Turnoffsafeoperatingarea_V_CE≤1350V,_T_vj≤175°C|-||90.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||60.0<br>30.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||90.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±25|V| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||349.0<br>175.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+175||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**|||||| |---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**| |**Characteristic**|||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.43|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)|||0.43|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W| Rev.�2.2,��2015-01-26 4 IHW30N135R3 **==> picture [146 x 65] intentionally omitted <==** ## Resonant�Switching�Series ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1350|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.90<br>2.00|1.85<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.80<br>1.90|1.85<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.75mA,_V_CE=_V_GE|5.1|5.8|6.4|V| |Zero gate voltage collector current|_I_CES|_V_CE=1350V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|100.0<br>2500.0|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|25.6|-|S| |Integratedgate resistor|_r_G|||none||Ω| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2066|-|pF| |Output capacitance|_C_oes||-|67|-|| |Reverse transfer capacitance|_C_res||-|58|-|| |Gate charge|_Q_G|_V_CC=1080V,_I_C=30.0A,<br>_V_GE=15V|-|263.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=600V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=220nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|337|-|ns| |Fall time|_t_f||-|47|-|ns| |Turn-off energy|_E_off||-|1.93|-|mJ| |Turn-off energy, soft switching|_E_off|_dv/dt_=150.0V/µs|-|0.41|-|mJ| Rev.�2.2,��2015-01-26 5 IHW30N135R3 **==> picture [146 x 65] intentionally omitted <==** ## Resonant�Switching�Series ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-off delaytime|_t_d(off)|_T_vj=175°C,<br>_V_CC=600V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=220nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|410|-|ns| |Fall time|_t_f||-|100|-|ns| |Turn-off energy|_E_off||-|3.50|-|mJ| |Turn-off energy, soft switching|_E_off|_dv/dt_=150.0V/µs|-|0.82|-|mJ| 6 Rev.�2.2,��2015-01-26 IHW30N135R3 **==> picture [475 x 312] intentionally omitted <==** **----- Start of picture text -----**<br> 100 350<br>er<br>P| [ATT] [N] TTAAT2<br>RePOTTSeeeTN D8 eae 300 \<br>250<br>: 10 Hester 2 LAT TTT<br>bE tp=1µs VO Gani ane<br>ocacBob3 e 5µs AAeB e I e Maaer]| Z2=xo Nr 200 \<br>oc ee 10µs GOD es a \<br>SSI a)<br>er USS UNTIL | 8 150 \<br>50µs<br>2] 1 SST 1ms \<br>fe Seo 8<br>Oo SS 10ms eS - 100 \<br>- Seeee.e<br>DC<br>oa o 50 Pf Pp IN\<br>0.1 0<br>comi c «= LEN<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V) temperature<br>( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br> **==> picture [472 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 60 90<br>Bar [ san/<br>80 VGE=20V<br>50<br>17V<br>ay<br>70<br>15V<br>: /L |<br>: e/a<br>40 60 13V<br>aw apeor 50 11V 0<br>9V<br>30<br>) ) /<br>40 7V<br>5V<br>: ISN<br>NG ape<br>20 30<br>i ain \<br>20<br>10<br>10<br>Sy) Nee<br>EpABNEEE<br>0 0<br>25 50 75 100 125 150 175 0.0 1.0 2.0 3.0 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br> Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C) Figure 4. Typical ( _T_ vj=25°C) 7 IHW30N135R3 **==> picture [471 x 302] intentionally omitted <==** **----- Start of picture text -----**<br> 90 90<br>/ — Tj=25°C<br>Tj=175°C<br>80 VGE=20V 80<br>17V<br>ean Ed<br>70 70<br>15V<br>: a) L e<br>E 60 13V eerEEMee AEE 60 |i<br>11V<br>: 50 y/o 50<br>9V<br>sf a //A :<br>e 40 7V INO ye 40 EP<br>O = LY. :<br>5V<br>Poe |i<br>Ne 30 je 30 if<br>SNM 20 20<br>10 10<br>BEY DNANG tjiL<br>PLANT<br>0 0<br>TL eZ<br>0 1 2 3 4 4 5 6 7 8 9 10 11 12<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>I C I C<br>**----- End of picture text -----**<br> **==> picture [471 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0 1000 a<br>IC=15A po td(off) a a ee eee<br>IC=30A Re tf es<br>IC=60A<br>ELL) PSS Fe<br>p e<br>2.5<br>|<br>ra <<br>Poet pe pe<br>05 if<br>or = pln ee<br>Be Lat.<br>= 2.0 coo 9 100 [oo<br>a 2 &a E= aae eeeeee ee ee<br>Pheer TDD)! pee<br>1.5<br>3ee—— eeee ee ee<br>1.0 10<br>0 PTET 25 50 75 100 TPE 125 150 ) 175 0 LEP 10 20 Et 30 40 50 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br> Figure 7. Typical a function ( _V_ GE=15V) Figure 8. (inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G(on)=10 Ω , _R_ G(off)=10 Ω , test circuit in Figure E) 8 IHW30N135R3 **==> picture [474 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a<br>td(off) | td(off)<br>tf tf<br>= | f= | aa eeee ee ee<br>1000<br>a a ee ee ee ee<br>Epo<br>Sa | 7| | | | | &<br>a==ee<br>FF<br>g 100<br>=<br>100<br>e SSa eeae e e a ee ee -oee<br>=a rna eeee ee<br>a CC ON OO (OO<br>+--+ ~[_LT TTT<br>10 10<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br> Figure 9. Typical **resistance** (inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _I_ C =30A, dynamic test Figure E) Figure 10. (inductive load, _V_ CE =600V, _V_ GE=0/15V, _I_ C =30A, _R_ G(on)=10 Ω , _R_ G(off)=10 Ω , test circuit in Figure E) **==> picture [471 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 8 7<br>typ.<br>min.<br>max.<br>Ww 6 Z4<br>g 7 3 Eoff Y<br>F n l<br>g 5<br>g 6<br>: bP o J<br>~ : 4 vA<br>oe or ow<br>5<br>3<br>- ~>s Zz<br>E ye . =<br>4<br>uy . = 2<br>im SS =<br>3<br>1<br>2 0<br>0 25 50 75 100 125 150 175 0 10 20 30 40 50 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. Gate-emitter of junction ( _I_ C=0.75mA) Figure 12. (inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G(on)=10 Ω , _R_ G(off)=10 Ω , dynamic test circuit in Figu 9 IHW30N135R3 **==> picture [474 x 622] intentionally omitted <==** **----- Start of picture text -----**<br> 5.00 4<br>Eoff Eoff<br>4.75<br>oy 4.50 oy wa<br>2 3<br>8 4.25 —!<br>—! ZL 8 wa<br>5 4.00 Z va<br>Zz Zz<br>3.75 Z|<br>I I<br>2<br>EF EF<br>== 3.50<br>3.25<br>3.00 1<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistance function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =30A, dynamic test circuit in I C =30A, R G(on)=10 Ω , R G(off)=10 Ω , dynamic<br>Figure E) test circuit in Figure E)<br>8 3.0<br>Eoff Tj=°C<br>Tj=°C<br>7<br>2.5<br>a) Sy a<br>2) T t)<br>6<br>: bey) 2 P ee<br>a i 2.0 oe<br>5<br>: a i<br>19) 19) a<br>: y ee<br>2 4 2 1.5 ;<br>PTT:= 3 TTT fgo)r= Eio 4e<br>1.0<br>e | [e][r]<br>= 2 = peas ZO<br>: =e ed<br>° en 0.5 ee e e<br>1<br>S TH<br>0 0.0<br>400 600 800 1000 1200 1400 100 1000<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] dv/dt , VOLTAGE SLOPE [V/us]<br>E E<br>E E<br>**----- End of picture text -----**<br> Figure 15. Figure 16. (inductive load, _T_ vj =175°C, _V_ GE=0/15V, _I_ C =30A, _R_ G(on)=10 Ω , _R_ G(off)=10 Ω , test circuit in Figure E) (inductive load, _T_ vj =175°C, _V_ GE=0/15V, _I_ C =30A, _R_ G=10 , dynamic test circuit Figure E) 10 IHW30N135R3 **==> picture [477 x 659] intentionally omitted <==** **----- Start of picture text -----**<br> 16 1E+4 a a a<br>270V , ’ , t1 Cies aa a<br>1080V Coes<br>14 Cres<br>7 I a ee ee ee<br>= 12 J, a e e<br>U) ‘ —<br>1000<br>: Vai | ty |<br>ro)i> 10 |S _—) J —m7O aa a eeeses es es<br>ul 8 e La ee<br>uwi 6 oOS| Sea we,<br>100<br>Ee . a<br>O<br>-a a a ee<br>4 aa eeeeee ee<br>2<br>a a<br>0 10<br>0 50 100 150 200 250 300 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=30A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>1 1<br>| noon<br>o YTTT UT a | |||<br>= a Se: = Se<br>eg 8<br>uw COICO D=0.5 a es OI D=0.5<br>9 T eT<br>0.2 0.2<br>Sd rin TT TLE 9 ann MATRA<br>to 0.1 Ae 0.1 lA € 0.1 LU eal 0.1<br>7p) Hee ell bo eae ml<br>LW SS Ariel 0.05 HHH] SS ot A eel 0.05 Ht<br>Wd miiCe a0ee ee it LW«ae Ceaii aAP0 eR 1 |<br>0.02 0.02<br>4 PTA LOU. MIC 4 HPAL... MIC<br><x eae eT A HI) TTT & eer a A 1|<br>0.01 0.01<br>2 a er / ae aan 2 ee er y ae ee ea<br>single pulse single pulse<br>TE ll<br>A MT) = aT<br>0.01 actrll Z 0.01 ootrll<br>Z Tl<br>Z cot Coo) Re iil Z co ooo Re Ill<br>s PA ET -- Hl s TT ET -- Ill<br>a i} TIE ill<br>- RL | ee |<br>|) CUA TTT ETI ELT TAT ETT P|) UA TUN CEI ETT TT ETT<br>i: 1 2 3 4 5 6 i: 1 2 3 4 5 6<br>ri[K/W]: 3.5E-3 0.084474 0.13208 0.20072 9.7E-3 1.7E-3 ri[K/W]: 3.5E-3 0.084474 0.13208 0.20072 9.7E-3 1.7E-3<br>τ i[s]: 2.8E-5 3.2E-4 3.0E-3 0.01594952 0.2164969 2.629558 τ i[s]: 2.8E-5 3.2E-4 3.0E-3 0.01594952 0.2164969 2.629558<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 19. IGBT transient thermal resistance Figure 20. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>( D = t p/T)<br>C<br>GE<br>V<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br> 11 IHW30N135R3 **==> picture [474 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 60 3.0<br>Tj=25°C IF=15A<br>Tj=175°C IF=30A<br>IF=60A<br>50<br>2.5<br>=E 40 ee ee os eeLu e e<br>Zz , Oo<br>es ee ee ee 2.0<br>ia ; 4<br>30 7 Q<br>S i S 1.5<br>5 EE<br>ge 20 —<br>~ | fe) dg EE<br>EAR OE<br>1.0<br>10<br>0 0.5<br>a Pt tt} ty<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br> Figure 21. Typical diode forward current as a function Figure 22. 12 IHW30N135R3 Resonant�Switching�Series **==> picture [146 x 65] intentionally omitted <==** ## PG-TO247-3 13 Rev.�2.2,��2015-01-26 IHW30N135R3 **==> picture [146 x 65] intentionally omitted <==** ## Resonant�Switching�Series **==> picture [481 x 318] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>GE (t)<br>**----- End of picture text -----**<br> **==> picture [252 x 287] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> Figure D. **==> picture [102 x 46] intentionally omitted <==** CC Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 Rev.�2.2,��2015-01-26 IHW30N135R3 **==> picture [146 x 65] intentionally omitted <==** ## Resonant Switching Series ## Revision History IHW30N135R3 Revision: 2015-01-26, Rev. 2.2 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |2.1|2012-10-12|Final data sheet| |2.2|2015-01-26|Minor changes| ## We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2015 Infineon Technologies AG All Rights Reserved. ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2, 2015-01-26 15
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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