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IHW30N120R5XKSA1
IGBT, 60 A, 1.55 V, 330 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:330W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 330W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 60A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.32 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
IHW30N120R5
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C<br>monolithic body diode with low forward voltage<br>for soft commutation<br>_ technology offering:<br>tight parameter distribution<br>G<br>ruggedness, temperature stable behavior<br>E<br>CEsat<br>parallel switching capability due to positive<br>coefficient in V CEsat<br>EMI<br>according to JESD-022 for target applications 2<br>lead plating; ROHS compliant a,<br>free (according to IEC 61249-2-21) rp tinegy<br>product spectrum and PSpice Models: “Sg<br>cooking<br>ovens G<br>C<br>E<br>**----- End of picture text -----**<br>
## **Features:**
http://www.infineon.com/igbt/
## **Applications:**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW30N120R5|1200V|30A|1.55V|175°C|H30MR5|PG-TO247-3|
Datasheet www.infineon.com
2018-09-18
IHW30N120R5
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## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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Datasheet
IHW30N120R5
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## Resonant�Switching�Series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||60.0<br>30.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||90.0|A|
|Turn off safe operating area<br>_V_CE≤1200V,_T_vj≤175°C,_t_p=1µs|-||90.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||60.0<br>30.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||90.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±25|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||330.0<br>165.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.45|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.45|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
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## Resonant�Switching�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.55<br>1.80<br>1.90|1.85<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.80<br>2.00<br>2.10|2.00<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.75mA,_V_CE=_V_GE|5.1|5.8|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>630|100<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|23.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1800|-|pF|
|Output capacitance|_C_oes||-|55|-||
|Reverse transfer capacitance|_C_res||-|45|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=30.0A,<br>_V_GE=15V|-|235.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=600V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|330|-|ns|
|Fall time|_t_f||-|33|-|ns|
|Turn-off energy|_E_off||-|1.10|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=200.0V/µs|-|0.12|-|mJ|
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## Resonant�Switching�Series
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=175°C,<br>_V_CC=600V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|395|-|ns|
|Fall time|_t_f||-|125|-|ns|
|Turn-off energy|_E_off||-|2.30|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=200.0V/µs|-|0.37|-|mJ|
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100 330<br>ee | 297<br>not for linear use<br>Aee ep ee ee eeeTT 264 PN\ fF ff oy<br>a ee e e<br>231<br>=5 10 UCTeeeUIITir) Zz¢ | NY\ tt<br>198<br>oa 2TT TTT CE TTT TTT a Nee<br>165<br>ac We<br>SO TMITIFT @ YT KT<br>132<br>2 1 ELUM2 ee ee oO<br>O MILT § 99 NC<br>rn I<br>YteeTTT EET ETee 66 aaaw<br>33<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE =15V; t p=1µs) temperature<br>( T vj ≤ 175°C)<br>60 90<br>VGE = 20V<br>80 17V<br>50 15V<br>~~ ><br>70<br>13V<br>: SNE<br>40 =| 60 SY 11V<br>9V<br>ane Re<br>50 8V<br>aa 30<br>:sf] 40 7V \<br>5V<br>en GRnnnn<br>© 20 © 30 MK ,<br>20<br>10 GE) ‘anne<br>10<br>cay Wanna<br>feene\<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
Figure 4. Typical ( _T_ vj=25°C)
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IHW30N120R5
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90 90<br>VGE = 20V Tvj = 25°C<br>Tvj =175°C<br>80 17V SH// /_/ 80 —<br>TT |) IE<br>15V<br>70 ey) A 70 e e<br>13V<br>z Hh<br>11V<br>2 60 |OW:WY ae 60 lf|<br>9V<br>PL5 50 8V IKEOWEZF x 50 LpMl<br>7V<br>S| AWW de |<br>40 40<br>P 5V New UY, P |<br>NY<br>30 30<br>a \IKL /NLNee8<br>ni) oan ee)<br>20 20<br>/PW<br>10 in) A> a 10 a / ae<br>ATI N<br>0 0<br>> 2 a eeee<br>0 1 2 3 4 5 2 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>I C I C<br>**----- End of picture text -----**<br>
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3.0 1000 a<br>IC = 15A po td(off) hz<br>IICC = 30A = 60A a ee ee ee tf —<br>= es ol l en<br>S . See e e e<br>2.5<br>: ua ee<br>a “7 =<br>= a = _--<br>2.0 100<br>= g ee a a a<br>aT _ = a es eeee<br>eo O a a ee ee ee<br>O aa Ee a Pa ee ee ee<br>ss _- = a eeee<br>ul an ee ee ee<br>1.5<br>1.0 10<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ n GE “O/15V. _r_ G=10 Ω , Dynamic test circuit in Figure E)
Datasheet
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IHW30N120R5
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1E+4 1000<br>a<br>i td(off) a I td(off) a ee<br>tf tf<br>1 SS ee<br>| ee ee<br>pot | J}| hE ET__|______|__ Ipfoe a_}a_} [ff]<br>P| | te tT | | tT a<br>z 1000 eg FP<br>= —jez {|<br>on pp rea =<br>im aa aa ce on<br>= a ee ee ee eee =<br>100<br>g 2 ee g a a ee<br>ef<br>i i a ee ee ee<br>= 100 = = a a eee<br>a<br>a a aa a eeee<br>|__|} > _____ 2 i ee<br>a eeeeee<br>a<br>10 10<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>r G ,GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =30A, Dynamic test circuit in I C =30A, r G=10 , Dynamic test circuit in<br>Figure E) Figure E)<br>7.0 5<br>typ. E off<br>min.<br>max.<br>Ww S.<br>4O et fs _ | | | | dyVA<br><¢ 6.2 .s me} 4<br>i sy =<br>Feps Lo. dgE LY/<br>je)DHPPM 5.4 mM ~ . ‘ — 7)ea> L 3 /<br>Lupe 4.6 fos~N RORXQ SS 9ES 2 LOKVA<br>ed a ee ee eee<br>ai ~ ~ =<br><x ‘XN 7p)<br>en ee Ae<br>O 3.8 XS“ . 1<br>3.0 0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=0.75mA) T vj V CE=600V,<br>V tote GE = oat; r G=10 Ω tec., Dynamicic testtest circuitcircuit |in<br>Figure E)<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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IHW30N120R5
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**----- Start of picture text -----**<br>
3.2 2.5<br>E off E off<br>2.2<br>2.9<br>Ww Ww<br>7) 7)<br>on J, on<br>fe) o 1.9 VA<br>> > /<br>v4 2.6 : v4<br>Ww / Ww<br>1.6<br>OO<br>= = /<br>EE<br>nn 2.3<br>1.3<br>2.0 1.0<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =30A, Dynamic test circuit in I C =30A, r G=10 , Dynamic test circuit in<br>Figure E) Figure E)<br>2.7 1.0<br>E off Tvj = 25°C<br>Tvj = 175°C<br>ET TIT.) 0.9 ELL<br>0.8<br>ee ee {i tt<br>2.4<br>ee ae 0.7 :<br>; je | | | | | oY<br>2 Z 2<br>ee—! / —! 0.6 ’<br>> > 7<br>O O 7<br>eye 2.1 | 0.5<br>BP<br>0.4<br>eLTVETif ti ysL 0.3 Poe<br>=aw,TA 1.8 ele=a a7 =<br>0.2<br>AG 0.1 / SS_<br>aa<br>pa<br>1.5 0.0<br>PPE EE ET ae7<br>400 450 500 550 600 650 700 750 800 0 10 20 30 40 50 60<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] I C , COLLECTOR CURRENT [A]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical turn off switching energy loss for<br>function of collector emitter voltage soft switching<br>(inductive load, T vj =175°C, V GE=0/15V, (inductive load, V CE =600V, V GE=0/15V,<br>E E<br>E E<br>**----- End of picture text -----**<br>
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I C =30A, r G=10<br>Figure E)<br>**----- End of picture text -----**<br>
_r_ G=10
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IHW30N120R5
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16 es 1E+4 a a<br>V CC Cies<br>' a a<br>—- V CC =960V / | Coes a<br>14 Cres<br>— y, /| I a ee ee<br>/ a e e<br>=a 12 JJs r r<br>:<br>1000<br>i / | | TT<br>i 10 Q Se<br>fe)> — } | / WwoO— a ss<br>WW 8 e heee<br>kb O ee<br>S a ee<br>6<br>: a ee<br>& . 100 a ee ee ee ee<br>o<br>-SS<br>4 rr a a ee ee<br>2<br>0 10<br>PEE EE ) EE<br>0 50 100 150 200 250 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=30A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>1 1<br>TT TT ee ee<br>PT Tn Te PT Tn Te<br>= a ee ees 2 a ase e<br>QZ a = ee<br>WW8 oS Wage aeil D = 0.5 HS im2 FT a eaJas TAIT<br>0.1 0.1<br>0.2<br>Zz Ua y kf<br>= SSee 2 Serie aes” dite eet eee ett<br>(On)= =aa| 0.1 LT TTRL =ry aCa7AS D = 0.5 |<br>it AT 0.05 CM TTT TTT = oe AS 0.2 |<br>a ZSeet All Ale A 0.02 WEME T TII TTI)EVI 3a a?”Serial): AUA ima 0.1 0HN [|]<br>0.01 0.05<br>= 0.01 | ee Ze NT Se 0.01<br>single pulse 0.02<br>fe< (enmY A TT fec tnTTTte 0.01 1|<br>single pulse<br>E PTT VAT TE TI TT TTS FHI TTMEEFA vgn ca CTTT<br>By | B pf<br>2 PON a 2 Lee |<br>0.001 0.001<br>Z a ae ° ne ant) Z ie 0 ® _ cn)<br>- A i Cr=h/R1 Co=te/Ro th - Anp Cr a/R1 Co=fe/Re it)<br>A | A |<br>AiA |e i: 1 2 3 4 A ec i: 1 2 3 4<br>ri[K/W]: 6.5E-3 0.1328125 0.1953125 0.1158854 ri[K/W]: 0.03036972 0.1122227 0.13125 0.1761444<br>τ i[s]: 9.0E-6 2.1E-4 3.2E-3 0.016711 τ i[s]: 3.6E-5 10.0E-5 2.3E-3 0.03551<br>1E-4 0 LETT Ti Tr TT TT T 1E-4 0 LETT TTT Ti Tr TT T<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>C<br>GE<br>V<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
> Figure 19. IGBT ( _D_ = _t_ p/T)
Figure 20.
( _D_ = _t_ p/T)
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90 ee| 3.5<br>Tvj = 25°C IF = 15A<br>Tvj = 175°C IF = 30A<br>80 EU IF = 60A<br>Sy 4) FO<br>3.0<br>70 ]<br>. [7]<br>_<br>< / _ wen<br>| \/ = wet<br>2 60 if uwO Ses 7<br>2.5<br>~) 50 / a -"<br>a><br>o<br>Qe$ 40 4<<br>= / =a 2.0 —><br>30<br>20<br>1.5<br>10<br>EPARE<br>0 1.0<br>0 1 2 3 4 5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 21. Typical diode forward current as a function Figure 22.
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## Resonant�Switching�Series
## **Package Drawing PG-TO247-3**
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## Resonant�Switching�Series
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
13
V�2.2 2018-09-18
Datasheet
IHW30N120R5
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## Resonant�Switching�Series
## **Revision�History**
IHW30N120R5
## **Revision:�2018-09-18,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2018-04-17|Final Datasheet|
|2.2|2018-09-18|Added thermal network on Fig.19 & 20|
14
V�2.2 2018-09-18
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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