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IHW30N120R3FKSA1
IGBT, 60 A, 1.55 V, 349 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP™
- Power Dissipation: 349W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 60A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.38 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
# IHW30N120R3
IHW30N120R3
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Features: C<br>* Powerful monolithic body diode with low forward voltage<br>designed for soft commutation only<br>* TRENCHSTOP_ technology offering:<br>- very tight parameter distribution<br>G<br>- high ruggedness, temperature stable behavior<br>E<br>- low V CEsat<br>- easy parallel switching capability due to positive<br>temperature coefficient in V CEsat<br>* Low EMI eo<br>* Qualified according to JESD-022 for target applications © yp<br>* Pb-free lead plating; ROHS compliant 70.z430n<br>* Halogen free (according to IEC 61249-2-21)<br>*« Complete product spectrum and PSpice Models: , =<br>http://www.infineon.com/igbt/<br>Applications: 1 2<br>3<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW30N120R3|1200V|30A|1.55V|175°C|H30R1203|PG-TO247-3|
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IHW30N120R3
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## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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Rev.�2.3,��2015-01-26
IHW30N120R3
Resonant�Switching�Series
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||60.0<br>30.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||90.0|A|
|Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤175°C|-||90.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||60.0<br>30.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||90.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±25|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||349.0<br>175.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+175||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.43|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||0.43|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.3,��2015-01-26
4
IHW30N120R3
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## Resonant�Switching�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.55<br>1.80<br>1.90|1.75<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.70<br>1.80|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.75mA,_V_CE=_V_GE|5.1|5.8|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|100.0<br>2500.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|25.6|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2038|-|pF|
|Output capacitance|_C_oes||-|68|-||
|Reverse transfer capacitance|_C_res||-|59|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=30.0A,<br>_V_GE=15V|-|263.0|-|nC|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=600V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=220nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|326|-|ns|
|Fall time|_t_f||-|39|-|ns|
|Turn-off energy|_E_off||-|1.47|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=150.0V/µs|-|0.34|-|mJ|
Rev.�2.3,��2015-01-26
5
IHW30N120R3
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## Resonant�Switching�Series
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=175°C,<br>_V_CC=600V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=220nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|387|-|ns|
|Fall time|_t_f||-|97|-|ns|
|Turn-off energy|_E_off||-|2.84|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=150.0V/µs|-|0.54|-|mJ|
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IHW30N120R3
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100 ed eeel a 350<br>SSS<br>e y A<br>PALee TISSeTY eeCOA ee 300 \<br>250<br>: 10 isnt. LAL ETT ETT<br>iuef ee tp=1µs AeHOCeest}| EOOOB<OBa<br>ow 7 eet= <OBa 200 \<br>5 eT 5µs a<br>rs 2 ee \<br>10µs<br>a eS 2)<br>NS 150 \\<br>50µs<br>i_ 0 1 1ms Se \<br>8 eee)<r ee e) 100 \\\<br>10ms<br>- =a eea ee etee ee<br>DC<br>nes see \\<br>50<br>ooo ti<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V) temperature<br>( T vj ≤ 175°C)<br>60 90<br>al fl<br>80 VGE=20V<br>50<br>17V<br>ce) |<br>70<br>15V<br>: : ca an<br>b 40 60 13V<br>i<br>i =,<br>11V<br>=) =) 50 [|<br>9V<br>ao 30 ao<br>fe)=5fe)S| 40 7V ONY/<br>2<br>5V<br>= rm \ j ><br>20 30<br>S =S \\\ 7aa<br>i LNA<br>20<br>10<br>a) Nee<br>10<br>0 0 piF| —_\ X<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
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350<br>300 \<br>250<br>LAL ETT ETT<br>EOOOB<OBa 200 \<br>\<br>2)<br>150 \\<br>e) 100 \\\<br>50<br>0<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>tot<br>P<br>**----- End of picture text -----**<br>
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IHW30N120R3
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90 90<br>Tj=25°C<br>80 VGE=20V BeWY) 80 Eaa Tj=175°C l<br>17V<br>a<br>70 70<br>15V<br>z A ee e ee<br>: 60 13V SAew LEI 60 Le<br>11V<br>E 50 ye— / E 50<br>9V<br>Rew, 4ee<br>5 40 7V 7 5 40<br>5V<br>PINT EL<br>:SE 30 Nf >m| = 30<br>20 NRA 20 Ee<br>Pout Lea<br>10 10<br>nay N ji<br>PLTINATT LAe<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 5 6 7 8 9 10 11 12<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=175°C)
Figure 6. Typical ( _V_ CE=20V)
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3.0 1000 a a a<br>IC=15A pT td(off) a a ee eee<br>IC=30A tf<br>ee<br>= IC=60A po UN<br>2.5<br>05aif=<br>=iu 2.0 g 100 a, as<br>oF rs)= poa<br>O _. E a ee ee ee<br>a _— = a ee ee ee<br>1.5<br>3 a ee<br>i A<br>1.0 10<br>0 25 50 75 100 125 150 175 0 10 20 30 40 50 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G(on)=10 Ω , _R_ G(off)=10 Ω , test circuit in Figure E)
8
IHW30N120R3
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— 1000 a<br>td(off) | td(off)<br>tf tf<br>= | f= a ee ee<br>1000 eo e | a e e ee<br>a ee<br>7 |i<br>es ee ee ee ee<br>e ESEERE EE e EE<br>Sa t/t | | | | | | |} ls<br>BS==Pt<br>FF<br>gg 100<br>=<br>100<br>SS SSee<br>2= eseeee ee == a ee ee ee<br>= a ee<br>a aaa (Poela OO ae<br>| {| | | | | | tT ht pj} ff | ft<br>10 10<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br>
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Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistance junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =30A, dynamic test circuit in I C =30A, R G(on)=10 Ω , R G(off)=10 Ω , dynamic<br>Figure E) test circuit in Figure E)<br>8 5<br>typ.<br>min.<br>max.<br>- El l)))] Ae<br>7<br>xt x 4<br>: tf E off | |tl<br>e) — (?p)<br>Q 6 x 7)<br>3<br>$f ge {| | | 7<br>Po a |<br>“+<br>x 5 - h~ x VA|<br>A ep | | Tx<br>i to NN Zz<br>2<br>k re . = |<br>: / “NS BL LY<br>4<br>: Ne | |Z | |)<br>UWuw ~s a EF 7<br>;: a 1 |ff<br>3<br>[7<br>2 0<br>0 25 50 75 100 125 150 175 0 10 20 30 40 50 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.75mA)
(inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G(on)=10 Ω , _R_ G(off)=10 Ω , dynamic test circuit in Figu
9
IHW30N120R3
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5 3.5<br>3.0<br>oy oy<br>4 E off E off<br>uw Lu 2.5 ea<br>7) 7)<br>e e|ies - ~<br>2.0<br>> ea > LT a<br>e 3 A d =<br>2 = 2<br>oO oO 1.5 r<br>eee<br>Zz Zz<br>O O<br>EF EF 1.0<br>== 2<br>0.5<br>1 0.0<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
_V_ GE =0/15V, Figure E)
_T_ vj =175°C, _V_ CE=600V, _I_ C
Figure 14.
(inductive load, _V_ CE =600V, _V_ GE=0/15V, _I_ C =30A, _R_ G(on)=10 Ω , _R_ G(off)=10 Ω , test circuit in Figure E)
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5 2.5<br>Tj=°C<br>Tj=°C<br>SRR ee eee<br>4 A > 2.0 c<br>> pe] E off tit tee. ET<br>gp E ee da L a<br>ik a ik :<br>e g ttZ eeg /<br>3 1.5<br>eho<br>f ZO f v<br>Zz Zz .<br>O 2 (0) 1.0 y<br>ert tT tT tT tT tt ye |<br>Zz Zz y<br>= I ”<br>BP<br>ee- 1 ee ee- 0.5 eeaoc p= ae<br>pte ee<br>ERR =F<br>0 0.0<br>400 500 600 700 800 900 1000 1100 1200 100 1000<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] dv/dt , VOLTAGE SLOPE [V/us]<br>E E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16.
(inductive load, _T_ vj =175°C, _V_ GE=0/15V, _I_ C =30A, _R_ G(on)=10 Ω , _R_ G(off)=10 Ω , test circuit in Figure E)
(inductive load, _T_ vj =175°C, _V_ GE=0/15V, _I_ C =30A, _R_ G=10 , dynamic test circuit Figure E)
10
IHW30N120R3
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16 1E+4<br>/ a a a<br>240V960V / ’ aes es es ee CCiesoes ,—<br>14 ‘ a ee ee ee Cres ||<br>7<br>12<br>0) J _<br>1000<br>: / \ a| | tt<br>ro)i> 10 ay, __/ , —m7O Caaa eses es<br>WW 8 e Ro<br>= es ee<br>UW 6 < i<br>100<br>Ee . Po<br>O<br>-<br>4 rsaa eeeeee ee<br>2<br>a a<br>0 10<br>0 50 100 150 200 250 300 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=30A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>1 FH Ci CoEH oooHEE EEE > 1 CooFH HHH E><br>o YTTT UT a | |||<br>= a Se: = Se<br>2 COCCI er 2. CTT TT<br>rr A D=0.5 | D=0.5<br>9 rin TT TLE 0.2 9 ann MATRA 0.2<br>ea 0.1 0.1 0.1 0.1<br>to ic UI aie III<br>7) Hee ell bo eae ml<br>Ww SS Ariel 0.05 HHH] SS ot A eel 0.05 Ht<br>oc amii a0” ee 111 Ww 7aii a 0 eR 1<br>0.02 0.02<br>4 PTA LOU. MIC 4 HPAL... MIC<br><= eae eT A Wi TT) = eer a A 1|<br>0.01 0.01<br>2 a er / ae aan 2 ee er / ae ee ea<br>single pulse single pulse<br>TE ll<br>A MT) = aT<br>0.01 actrll Z 0.01 ootrll<br>Z Tl<br>Zz cot Coo) Reo Z co ooo Re Mil<br>s PA ET -- Hl s TT ET -- Ill<br>fe a i} TIE ill<br>- RL | ee |<br>|) CUA TTT ETI ELT TAT ETT P|) UA TUN CEI ETT TT ETT<br>i: 1 2 3 4 5 6 i: 1 2 3 4 5 6<br>ri[K/W]: 3.5E-3 0.084474 0.13208 0.20072 9.7E-3 1.7E-3 ri[K/W]: 3.5E-3 0.084474 0.13208 0.20072 9.7E-3 1.7E-3<br>τ i[s]: 2.8E-5 3.2E-4 3.0E-3 0.01594952 0.2164969 2.629558 τ i[s]: 2.8E-5 3.2E-4 3.0E-3 0.01594952 0.2164969 2.629558<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>C<br>GE<br>V<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
> Figure 19. IGBT ( _D_ = _t_ p/T)
Figure 20. Diode function ( _D_ = _t_ p/T)
11
IHW30N120R3
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60 3.0<br>Tj=25°C IF=15A<br>Tj=175°C IF=30A<br>IF=60A<br>50<br>Zza= 40 eeeei] e uw0) 2.5 e<br>ee ee 2.0 ee cee<br>30 Q<br>1.5<br>S i S =<br>ee 20 ee<br>ee ee eee<br>1.0<br>10<br>0 0.5<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 21. Typical diode forward current as a function Figure 22.
12
IHW30N120R3
Resonant�Switching�Series
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## PG-TO247-3
13
Rev.�2.3,��2015-01-26
IHW30N120R3
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## Resonant�Switching�Series
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**----- Start of picture text -----**<br>
V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>GE (t)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
Figure D.
**==> picture [102 x 46] intentionally omitted <==**
CC Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
Rev.�2.3,��2015-01-26
IHW30N120R3
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## Resonant Switching Series
## Revision History
IHW30N120R3
Revision: 2015-01-26, Rev. 2.3
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2012-10-12|Final data sheet|
|2.2|2013-03-15|Change Rthvalue|
|2.3|2015-01-26|Minor changes|
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Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2015 Infineon Technologies AG All Rights Reserved.
## Legal Disclaimer
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## Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.3, 2015-01-26
15
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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