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IHW30N110R3FKSA1
IGBT, 60 A, 1.55 V, 333 W, 1.1 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:; Available until stocks are exhausted
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (08-Jul-2021)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 333W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 60A
- Collector Emitter Voltage Max: 1.1kV
- Collector Emitter Saturation Voltage: 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.63 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
# IHW30N110R3
IHW30N110R3
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Features: C<br>* Powerful monolithic body diode with low forward voltage<br>designed for soft commutation only<br>¢ Very tight parameter distribution<br>* High ruggedness, temperature stable behavior<br>G<br>«Low V CEsat E<br>¢ Easy parallel switching capability due to positive temperature<br>coefficient in V CEsat<br>« Low EMI<br>* Qualified according to JEDEC for target applications —<br>¢ Pb-free lead plating; ROHS compliant Gppp<br>« Complete product spectrum and PSpice Models: 70.24!60n<br>http://www.infineon.com/igbt/<br>Applications:<br>G<br>* Inductive cooking C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW30N110R3|1100V|30A|1.55V|175°C|H30R1103|PG-TO247-3|
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IHW30N110R3
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## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||1100|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||60.0<br>30.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||90.0|A|
|Turnoffsafeoperatingarea_V_CE≤1100V,_T_vj≤175°C|-||90.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||60.0<br>30.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||90.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±25|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||333.0<br>166.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+175||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.45|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||0.45|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
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## Resonant�Switching�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1100|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.55<br>1.85<br>2.00|1.75<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.38<br>1.41|1.55<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.70mA,_V_CE=_V_GE|5.1|5.8|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1100V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|5.0<br>2500.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|15.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1460|-|pF|
|Output capacitance|_C_oes||-|55|-||
|Reverse transfer capacitance|_C_res||-|45|-||
|Gate charge|_Q_G|_V_CC=880V,_I_C=30.0A,<br>_V_GE=15V|-|180.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=600V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=80nH,_C_σ=39pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|350|-|ns|
|Fall time|_t_f||-|16|-|ns|
|Turn-off energy|_E_off||-|1.15|-|mJ|
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## Resonant�Switching�Series
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=175°C,<br>_V_CC=600V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=80nH,_C_σ=39pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|410|-|ns|
|Fall time|_t_f||-|60|-|ns|
|Turn-off energy|_E_off||-|1.80|-|mJ|
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100 100<br>ee a YS eee ea<br>90<br>\ | PT TYTN Ts TTT ATST<br>: 80 PT THVT TATAVIN\ eTPTTPe SebaAC|De |<br>70<br>m ee 10 tp=1µs Ox Seulian<br>Ww4 60 TC=80° 'Ww OA 10µs<br>rsx TC=110° iil \ \ x | 20µs Za<br>or 50 Tirmns--t\ \ rsor eee= ZA THI<br>50µs<br>BTM<br>: 40 TIN TT & |ase<br>500µs<br>| SE CUMIN<br>1<br>2 5ms A<br>30<br>oO- CMISH TINCT oO2 LTTPooa t t<br>DC<br>20 Lv A mPL A I | LTE NNTNaN - PTora = oea|<br>a a ANN SeTTET<br>10<br>0 0.1<br>1 10 100 1000 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T j 175°C; V GE=15V)<br>( T j ≤ 175°C, D =0.5, V CE =600V, V GE=0/15V,<br>R G=15 Ω )<br>I C I C<br>**----- End of picture text -----**<br>
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350 60<br>300<br>250<br>» LNT. SINT<br>40<br>Ee aa<br>PT NEL \<br>200 \ &<br>2) ad<br>am 150 \ o<br>= 4 \<br>20<br>100<br>ELEEEEENE LETTE<br>50<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>P tot I C<br>**----- End of picture text -----**<br>
> Figure 3. Power **temperature** ( _T_ j ≤ 175°C)
Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C)
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90<br>80 VGE=20V<br>17V<br>=<br>70<br>15V<br>Loew<br>60 13V<br>11V<br>50<br>9V<br>40 7V<br>5V<br>30<br>20<br>10<br>0<br>0 1 2 3<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic<br>( T j=25°C)<br>I C<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
90<br>80 VGE=20V<br>17V<br>2a<br>70<br>15V LENZ<br>i<br>60 13V<br>11V<br>50<br>9V<br>40 7V<br>5V<br>30<br>20<br>10<br>0<br>0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br>
Figure 6. Typical ( _T_ j=175°C)
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**----- Start of picture text -----**<br>
90<br>25°C IC=15A<br>a Tj=175°C a IC=30A<br>80 IC=60A<br>T U TTE; 3<br>70<br>e | s F eei<br>o o E e<br>60<br>50<br>40<br>pL :<br>2<br>eens a ep<br>| eee:<br>30<br>20<br>ee | been<br>10<br>Pilati ee<br>STlYI itty ee<br>0 1<br>4 6 8 TUTTE 10 12 14 } 25 Ep 50 75 Pt 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 8. a function ( _V_ GE=15V)
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**----- Start of picture text -----**<br>
td(off) td(off)<br>tf tf<br>1000 1000<br>a e e<br>a a Se eee<br>a ee re es ee eee<br>a a ee ee<br>w pe Poe<br>a (=e<br>Ww Ww<br>i<br>oO oO<br>Zz Zz<br>5 100 po 5 100 a es<br>a== aa a<br>ao a aeeeseee aee es ee<br>a ee ee ee a ee ee ee<br>10 10<br>10 20 30 40 50 60 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistance<br>(ind. load, T j =175°C, V CE =600V, V GE=0/15V,=0/15V, (ind. load, T j =175°C, V CE =600V, V GE=0/15V,<br>R =15 ; R =15 Ω , test circuit in Fig. E) I C =30A, test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br>
(ind. load, _T_ j =175°C, _V_ CE =600V, _V_ GE=0/15V,=0/15V, _R_ G(on)=15 ; _R_ G(off)=15 Ω , test circuit in Fig. E)
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**----- Start of picture text -----**<br>
8<br>td(off) typ.<br>1000 tf min.<br>max.<br>aa aes eea Ww©) 7<br>a <<br>a a a<br>6<br>e | °<br>ty 100 a RS ES So) a ares<br>= a es Wp) wee<br>= a es ee ee Lu<br>5 aOS2 5 ><br>4 -<br>Bop° 10 a a uw ~~ s ~ N\<br>es Ww ae .<br>a se b x<br>a a CC x<br>3<br>1 2<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11.
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**----- Start of picture text -----**<br>
(ind. load, V CE =600V, V GE =0/15V, I C=30A,<br>R G(on)=15 ; R G(off)=15 Ω , test circuit in Fig.<br>**----- End of picture text -----**<br>
Figure 12. Gate-emitter of junction ( _I_ C=0.7mA)
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**----- Start of picture text -----**<br>
4 3<br>Eoff Eoff<br>oy oy<br>n 3 /n<br>oe)—! o—!e) 2 -<br>O O<br>ow ow<br>WwZ 2 7 WwZ<br>Ww Ww<br>Zz Zz<br>OO 1<br>EE<br>== 1<br>0 0<br>0 15 30 45 60 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
(ind. load, _T_ j =175°C, _V_ CE =600V, _V_ GE=0/15V, _R_ G(on)=15 ; _R_ G(off)=15 Ω , test circuit in Fig. E)
Figure 14.
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**----- Start of picture text -----**<br>
(ind. load, T j =175°C, V CE =600V, V GE=0/15V,<br>test circuit in Fig. E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
2 2.2<br>Eoff Eoff<br>2.0<br>~ {| | ) |,<br>e | | pL ls<br>a ae:<br>| i> =| a 1.8<br>> ><br>WwZeit 1 tT) | Ww8Z<br>ieOOee:<br>1.6<br>ZZ<br>ee ee:<br>O O<br>EF EF<br>nn<br>ef 1.4<br>0 1.2<br>25 50 75 100 125 150 175 300 400 500 600 700 800 900<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(ind load, V CE =600V, V GE =0/15V, I C=30A, (ind. load, T j =175°C, V GE =0/15V, I C=30A,<br>R G(on)=15 ; R G(off)=15 Ω , test circuit in Fig. E) R G(on)=15 ; R G(off)=15 Ω , test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
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IHW30N110R3
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**----- Start of picture text -----**<br>
16<br>220V<br>880V<br>14<br>12 1000<br>Cies<br>Coes<br>O ’ — $$ 7<br>Cres<br>Mmfe)c 10 // , ( SsWW SSEaae s E=|<br>8<br>SE |f rn< |8<br>LuLu 6 oO=e 100 aenn es<br>oO a<br>- 4 aa eeeee ee<br>2<br>0 10<br>0 40 80 120 160 200 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=30A) collector-emitter voltage<br>( V GE =0V, f=1MHZz)<br>1 1<br>ro ro<br>a ee | | a ee||<br>= CTT TTT Le n it = TT TT AS<br>2 PLT OI TT ee YS PUI TT TAT come LTT<br>D=0.5 D=0.5<br>wT LAI a LU<br>A 0.2 VN 0.2<br>I 0.1 0.1 0.1 0.1<br>WWa ee Le rlla7ae ee HteM a LalPEeeAeal HETMl<br>oO 0.05 0.05 HH<br>= PE a Seat 28<br>7 CO Cn 0.02 nn = se 0.02 |<br>=z HTT, EPL. MCT 7 HT CORAL... MCT<br>0.01 0.01<br>= rr | ee Wi ET) = ee | TTT<br>SET ic = Ee a ate et<br>single pulse single pulse<br>wo. ke = er/ -i= er>elY - -<br>a22 0.01 FprACTGanatlllVAMe R r2 0.01 meraeWAizeFait Nettrrae|wil PC tC<br>is ECHR HH H F H 2 EeeHH H rH<br>fe aCTA | ~~ io(OM is aPB || -- illIll]<br>- l l - UY<br>PA PC i: 1 TT 2 3 CT 4 TT oP i: 1 2 3 4<br>ri[K/W]: 4.5E-3 0.1058 0.152 0.1827 ri[K/W]: 4.5E-3 0.1058 0.152 0.1827<br>τ i[s]: 9.8E-6 3.2E-4 2.9E-3 0.01487178 τ i[s]: 9.8E-6 3.2E-4 2.9E-3 0.01487178<br>We | We |<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>C<br>GE<br>V<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>
> Figure 19. IGBT ( _D_ = _t_ p/T)
Figure 20. Diode function ( _D_ = _t_ p/T)
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IHW30N110R3
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**----- Start of picture text -----**<br>
60 2<br>Tj=25°C IF=15A<br>Tj=175°C IF=30A<br>IF=60A<br>50<br>KE 40 : Lu<br>Zz: SERRE in 7Oo e ee<br>im <x<br>i 3<br>3 ><br>S) 30 ©<br>= <x<br>==<br>20<br>10<br>0 1<br>0 1 2 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 21. Typical diode forward current as a function Figure 22.
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Resonant�Switching�Series
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## PG-TO247-3
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**----- Start of picture text -----**<br>
V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>GE (t)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
Figure D.
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CC Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## Resonant Switching Series
## Revision History
IHW30N110R3
Revision: 2015-01-26, Rev. 2.1
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2009-12-01|-|
|1.2|2011-01-21|Package drawingRev. 05|
|1.3|2013-02-12|Layout change|
|2.1|2015-01-26|Final data sheet|
## We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com
## Published by
Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2015 Infineon Technologies AG All Rights Reserved.
## Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.1, 2015-01-26
15
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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