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Illustrative purposes only
IHW25N120E1XKSA1
IGBT, 50 A, 1.5 V, 231 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:231W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pin
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 231W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 150°C
- Continuous Collector Current: 50A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.09 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
# IHW25N120E1
IHW25N120E1
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**----- Start of picture text -----**<br>
Features: C<br>* Powerful monolithic body diode with low forward voltage<br>designed for soft commutation only<br>* TRENCHSTOP_ technology applications offers:<br>- very tight parameter distribution<br>G<br>- high ruggedness, temperature stable behavior<br>E<br>- low V CEsat<br>- easy parallel switching capability due to positive<br>temperature coefficient in V CEsat<br>« Low EMI<br>* Qualified according to JEDEC for target applications =<br>¢ Pb-free lead plating; ROHS compliant fale<br>* Complete product spectrum and PSpice Models: ro heap<br>http://www.infineon.com/igbt/<br>Applications:<br>* Inductive cooking<br>* Inverterized microwave ovens<br>* Resonant converters G<br>¢ Soft switching applications C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW25N120E1|1200V|25A|1.5V|150°C|H25ME1|PG-TO247-3|
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IHW25N120E1
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## Resonant�Soft-Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
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IHW25N120E1
Resonant�Soft-Switching�Series
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||50.0<br>25.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||75.0|A|
|Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤150°C1)|-||75.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||50.0<br>25.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||75.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±25|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||231.0<br>92.4|W|
|Operating junction temperature|_T_vj|-40...+150||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.54|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.54|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) dV/dt < 1kV/µs
Rev.�2.1,��2016-07-29
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IHW25N120E1
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## Resonant�Soft-Switching�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=25.0A<br>_T_vj=25°C<br>_T_vj=100°C<br>_T_vj=150°C|-<br>-<br>-|1.50<br>1.65<br>1.75|2.00<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=25.0A<br>_T_vj=25°C<br>_T_vj=100°C<br>_T_vj=150°C|-<br>-<br>-|1.90<br>2.15<br>2.35|2.50<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.80mA,_V_CE=_V_GE|4.0|5.8|8.0|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=150°C|-<br>-|-<br>500|100<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=25.0A|-|23.0|-|S|
|Integratedgate resistor|_r_G|||8.5||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1300|-|pF|
|Output capacitance|_C_oes||-|37|-||
|Reverse transfer capacitance|_C_res||-|31|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=25.0A,<br>_V_GE=15V|-|147.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=105V,_I_C=25.0A,<br>_V_GE=0.0/18.0V,<br>_R_G(off)=10.2Ω<br>Energy losses include “tail”<br>according Figure B. (Test circuit<br>FigureE,_C_r=300nF).|-|229|-|ns|
|Fall time|_t_f||-|1020|-|ns|
|Turn-off energy, soft switching|_E_off|_dv/dt_=83.0V/µs|-|0.08|-|mJ|
Rev.�2.1,��2016-07-29
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IHW25N120E1
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## Resonant�Soft-Switching�Series
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=210V,_I_C=50.0A,<br>_V_GE=0.0/18.0V,<br>_R_G(off)=10.2Ω<br>Energy losses include “tail”<br>according Figure B. (Test circuit<br>FigureE,_C_r=300nF).|-|249|-|ns|
|---|---|---|---|---|---|---|
|Fall time|_t_f||-|850|-|ns|
|Turn-off energy, soft switching|_E_off|_dv/dt_=166.0V/µs|-|0.24|-|mJ|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=150°C,<br>_V_CC=105V,_I_C=25.0A,<br>_V_GE=0.0/18.0V,<br>_R_G(off)=10.2Ω<br>Energy losses include “tail”<br>according Figure B. (Test circuit<br>FigureE,_C_r=300nF).|-|240|-|ns|
|Fall time|_t_f||-|1764|-|ns|
|Turn-off energy, soft switching|_E_off|_dv/dt_=83.0V/µs|-|0.19|-|mJ|
||||||||
|Turn-off delaytime|_t_d(off)|_T_vj=150°C,<br>_V_CC=210V,_I_C=50.0A,<br>_V_GE=0.0/18.0V,<br>_R_G(off)=10.2Ω<br>Energy losses include “tail”<br>according Figure B. (Test circuit<br>FigureE,_C_r=300nF).|-|253|-|ns|
|Fall time|_t_f||-|1424|-|ns|
|Turn-off energy, soft switching|_E_off|_dv/dt_=166.0V/µs|-|0.52|-|mJ|
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IHW25N120E1
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**----- Start of picture text -----**<br>
240 70<br>210 eee 60<br>180<br>eee ee 50<br>150<br>aNSSS 40 eee<br>120<br>PEN op EEE<br>30<br>90<br>PRON ENG 20<br>60<br>AAA<br>aw 10<br>30<br>0 PP IN S 0 LL<br>25 50 75 100 125 150 25 50 75 100 125 150<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 150°C) ( V GE ≥ 15V, T vj ≤ 150°C)<br>75 75<br>VGE=20V VGE=20V<br>17V 17V<br>15V 15V<br>13V 13V<br>50 11V 50 11V<br>9V 9V<br>7V 7V<br>5V 5V<br>25 25<br>° ! ° y<br>SEKY 2000 LEAN 2a<br>F\<br>0 Pp | 0 | ARS<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical output characteristic<br>( T vj=25°C) ( T vj=150°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
7
IHW25N120E1
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**----- Start of picture text -----**<br>
75<br>Tvj=25°C<br>Tvj=150°C<br>—— /<br>= [/<br>x<br>50<br>a)<br>y<br>oca LTE L yA<br>:<br>:<br>3 25<br>8. / /<br>/ ij<br>7<br>aad<br>0<br>4 5 6 7 8 9 10 11 12<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=20V)
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**----- Start of picture text -----**<br>
3.5<br>IC=12.5A<br>IC=25A<br>IC=50A<br>3.0<br>=<br>al 2.5<br>re ao<br>2.0<br>ow at<br>WwW r<br>EE — — _ | -<br>pL 1.5<br>a<br>Ss | | [| | |<br>: 1.0 ft<br>_<br>O<br>2oO fF |<br>.<br>0.5<br>0.0<br>25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 6. Typical a function ( _V_ GE=15V)
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**----- Start of picture text -----**<br>
1E+4 aa 1E+4<br>i 1 td(off) a aee ee ee i1 td(off) poa a<br>tf tf<br>—— ——— _—— ————<br>|r Ra<br>a ae eee eee a a ee<br>s 1000 as 1000<br>uwneeee en ee.) [_———<br>= a a | | a a<br>F Eea ee = a ee<br>O po ph<br>eees es ee ee<br>==<br>a 100 aa 100 a<br>aaes a es<br>a aee<br>ae es a es<br>a a ee ee ee ee<br>10 10<br>0 10 20 30 40 50 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>
Figure 7.
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**----- Start of picture text -----**<br>
T vj =150°C, V GE=0/18V,<br>**----- End of picture text -----**<br>
Figure 8. Typical **resistance**
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V GE=0/18V,<br>I C =25A, Dynamic test circuit in Figure<br>**----- End of picture text -----**<br>
_R_ G=10.2
8
IHW25N120E1
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**----- Start of picture text -----**<br>
1E+4 aa 7.0<br>t 1 ttd(off)f a a aee [— typ. |<br>a ee<br>ae 6.5<br><x<br>Kk<br>6.0<br>— 1000 a a _I<br>n ee 5.5<br>rm ee a [nr) ;<br>= aEe on Pe<br>5.0<br>O a ee ee ee = .<br>4.5<br>ep) 100 a =<br>a a es LuT<br>a|<br>a Ee 4.0<br>as es es 5<br>3.5<br>es<br>10 3.0<br>25 50 75 100 125 150 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9.
_V_ GE =0/18V, _I_ C=25A,
Figure 10.
( _I_ C=0.8mA)
_R_ G=10.2
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**----- Start of picture text -----**<br>
0.6 0.30<br>Eoff, Tvj = 25°C Eoff<br>Eoff, Tvj = 100°C<br>Eoff, Tvj = 150°C<br>0.5 0.25<br>Sy / J<br>D / D 1<br>0.4 0.20<br>ep) |<br>fo) 7 n —-<br>aa F fo)<br>> y, aa<br>2 / / ><br>im 0.3 /f/ff im|e 0.15<br>Z 7 Z<br>Lu 7 Lu<br>0.2 / |Z Z| F 0.10<br>= / WA =<br>= Va 7 =<br>7) y 7 n<br>~ vaY\ TaoY y a ~<br>0.1 0.05<br>0.0 0.00<br>0 10 20 30 40 50 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>E E<br>**----- End of picture text -----**<br>
Figure 11.
Figure 12.
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**----- Start of picture text -----**<br>
(inductive load, V GE =0/18V, R G=10.2 Ω ,<br>Dynamic test circuit in Figure E)<br>**----- End of picture text -----**<br>
(inductive load, _T_ vj =150°C, _V_ GE=0/18V, _I_ C =25A, Dynamic test circuit in Figure
9
IHW25N120E1
**==> picture [489 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.6 Eoff, 12,5A 16 ———— V CC = 240V ///<br>Eoff, 25A V CC<br>Eoff, 50A 14 —- =960V /\<br>0.5<br>= “ S 12 J)<br>D 0.4 2<<br>O7 B 10 A<br>fe 0.3 -oo ~i 8 P| | |<br>O “7 ii<br>=H 6<br>0.2<br>=aa . 4<br>0.1<br>2<br>0.0 0<br>25 50 75 100 125 150 0 20 40 60 80 100 120 140 160<br>T vj , JUNCTION TEMPERATURE [°C] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 13.
Figure 14. Typical ( _I_ C=25A)
_V_ GE =0/18V, _I_ C=25A,
_R_ G=10.2
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**----- Start of picture text -----**<br>
1<br>[— Cies J fT etaa tee il<br>Coes<br>| Cres Pf ff _ | a ee | |<br>a = ee|<br>1000 ae ee Te EeOE | = MN |<br>_|}a + A@ 0.1 |FEEMiePH D=0.5 EH<br>0.2<br>ou | | | |) | § ERR ARS<br>A Lat ZA tt 0.1<br>0.05<br>ef | Il<br>0.02<br>Qo | x PLrecrcommot<br>BA wall LT LUT<br> | single pulse<br>100 PNNT zm<br>SE TM<br>0.01<br>oO Ty ll<br>. es Wu AM | A A<br>arseen ee AT ni<br>pS ESI SetCo<br>ae ee 7TT<br>ee ee eeoe - Y |<br>10 pe 0.001 SaraI t NT e) a RATE |<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 15. Typical capacitance as a function of Figure 16. IGBT / Diode transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
10
IHW25N120E1
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**----- Start of picture text -----**<br>
75 a 3.5<br>Tvj=25°C / IF=12.5A<br>Tvj=150°C / IF=25A _-<br>IF=50A<br>3.0<br>< / a 2.5 oa<br>5 50 Ww<br>K —--T 7<br>ors / / 0)g 2.0 f= aa<br>Q<br>1.5<br>= a<br>OLL_ 25 / /2- 1.0<br>0.5<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 17. Typical diode forward current as a function Figure 18.
11
IHW25N120E1
Resonant�Soft-Switching�Series
**==> picture [146 x 65] intentionally omitted <==**
## **Package Drawing PG-TO247-3**
12
Rev.�2.1,��2016-07-29
IHW25N120E1
Resonant�Soft-Switching�Series
**==> picture [146 x 65] intentionally omitted <==**
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t) 90% V GE<br>t<br>I (t) �0% I C<br>2% I C<br>t<br>V CE (t)<br>t f t<br>t<br>d(off)<br>Figure A.<br>V GE (t) 90% V GE<br>t<br>I C (t)<br>1% I C<br>t<br> V CE (t) t 2<br>E off [=] V CE x I C x d t<br>t 1<br>t<br>t 1 t 2<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br> V CE<br> V GE<br> I CE<br>t<br>Figure C. Typical switching behavior<br>in resonant applications<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
R<br>CC<br>Figure E. Dynamic test circuit<br>Resonant capacitor, C r<br>Damping resistor, R<br>**----- End of picture text -----**<br>
Figure B.
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IHW25N120E1
|Revision History|||
|---|---|---|
|IHW25N120E1|||
|Revision: 2016-07-29,|Rev. 2.1||
|Previous Revision|||
|Revision<br>Date||Subjects(major changes since last revision)|
|2.1<br>2016-07-29||Final data sheet|
## party.
## **Warnings**
14
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →