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IHW20N65R5XKSA1
IGBT, 40 A, 1.35 V, 150 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:150W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 150W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.07 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
# IHW20N65R5
IHW20N65R5
## **Features:**
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voltage<br>* TRENCHSTOP TM _ technology offers:<br>- very tight parameter distribution<br>- high ruggedness and stable temperature behavior<br>- very low V CEsat and low E off<br>- easy parallel switching capability due to positive<br>temperature coefficient in V CEsat<br>* Low EMI<br>* Qualified according to JESD-022 for target<br>¢ Pb-free lead plating; ROHS compliant<br>* Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications:<br>**----- End of picture text -----**<br>
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C<br>G<br>E<br>=<br>fale<br>re Mineo,<br>4<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW20N65R5|650V|20A|1.35V|175°C|H20ER5|PG-TO247-3|
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IHW20N65R5
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## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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Rev.�2.3,��2015-12-22
IHW20N65R5
Resonant�Switching�Series
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||40.0<br>20.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||60.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||60.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||19.0<br>10.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||60.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||150.0<br>75.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||1.00|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||4.68|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.3,��2015-12-22
4
IHW20N65R5
Resonant�Switching�Series
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## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.35<br>1.60|1.70<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.70<br>2.00|2.10<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.20mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>600|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|60.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2450|-|pF|
|Output capacitance|_C_oes||-|23|-||
|Reverse transfer capacitance|_C_res||-|10|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=20.0A,<br>_V_GE=15V|-|97.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=35nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|250|-|ns|
|Fall time|_t_f||-|7|-|ns|
|Turn-on energy|_E_on||-|0.54|-|mJ|
|Turn-off energy|_E_off||-|0.16|-|mJ|
|Total switchingenergy|_E_ts||-|0.70|-|mJ|
Rev.�2.3,��2015-12-22
5
IHW20N65R5
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## Resonant�Switching�Series
## **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1100A/µs|-|82|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.55|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|29.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-2080|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=35nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|22|-|ns|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|290|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.62|-|mJ|
|Turn-off energy|_E_off||-|0.29|-|mJ|
|Total switchingenergy|_E_ts||-|0.91|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1100A/µs|-|101|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|2.69|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|43.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1690|-|A/µs|
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Rev.�2.3,��2015-12-22
IHW20N65R5
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100 160<br>aee 140<br>Saeco =k | | [I]<br>not for linear use<br>| OO SEe S T 120 '<br>ee 10 |<br>100<br>3 ee a aN<br>80<br>oc PT TTTT <<br>Ww<br>eg | e RN<br>60<br>1<br>:- TNFSSAL 40 PT TP PNT\<br>ee ee IL<br>ee 20 Py PT IN<br>0.1 0<br>1 Co 10 TInt 100 1000 25 TTX 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C, V GE = =15V, t p=1µs) temperature<br>( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br>
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40 60<br>VGE=20V<br>55<br>EE<br>35 KT.) (aie 17V<br>50<br>15V<br>30 45 13V<br>_ PX | LoyEE<br>40 11V<br>PONCE PE<br>25<br>9V<br>35<br>8V<br>ep] 20 oN 30<br>| 8 (ee yy<br>7V<br>25<br>ee 15 ee 6V<br>20<br>BE eS<br>10 15<br>10<br>PN<br>5<br>5<br>PEEPS Aa<br>0 0<br>Pp<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
Figure 4. Typical ( _T_ vj=25°C)
7
IHW20N65R5
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60 60<br>VGE=20V Tvj=25°C<br>55 ———fi/// Tvj=175°C |<br>17V<br>Se, | = |<br>50 15V HL)HI / 50 —_ /<br>45 13V<br>40 11V 40<br>w7i<br>W|<br>9V<br>35<br>8V yL<br>: 30 e/a 30<br>fe) 7V Wi fe)<br>uwF 25 6V / uw5 //<br>20 20<br>5V<br>15<br>10 10<br>5<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 3 4 5 6 7 8<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=175°C)
Figure 6. Typical ( _V_ CE=20V)
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2.00 1000<br>IC=2,5A aa<br>IC=5A aeeee<br>1.75 E IC Li =10A ttl) BeeeS==.=<br>IC=20A<br>Ss> = apo<br>feE 1.50 | 7_ P ttd(off)f |<br>td(on)<br>100 tr<br>fe“”P 1.25 S ST uwan feA a a LE|<br>a = p o<br>BSE= 1.00 : EEEQ E SS=<br>es A e Sse<br>0.75<br>10<br>pL<br>0.50 aes<br>(e)aO | * a e aeeOO Seeee ee<br>2 0.25<br>0.00 1<br>0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =175°C, V CE=400V,=400V,<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
(inductive load, _T_ vj =175°C, _V_ CE=400V,=400V, _V_ GE =0/15V, _R_ Gon=23 Ω , _R_ Goff=23 Ω , test circuit in Figure E)
8
IHW20N65R5
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1000 aaa 1000<br>a a a aee ee eeedeee t1| ttd(off)f aaa aeeeea<br>td(on)<br>tr<br>re = ee ee ee ee | ee ee ee<br>per f ff fT J<br>td(off)<br>efs 100 1 | ttfd(on) LeLELa ee Jes 100 aLEssft<br>n H tr ee ee eee ees OE) a<br>uw 1 a a | | a a a<br>= a ee ee eee = a eeee ee<br>F a ee ee ee ee ee a eeee<br>O e eee ee a ee<br>a a ee eee<br>= |B ove<br>ep)Ba 10 foeaaae [psy] es ep)=- 10 aa cea a_——eeee<br>a a es es<br>aee ee ee a ee<br>es a eeee<br>re a a<br>1 1<br>10 20 30 40 50 60 70 80 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br>
Figure 9. Typical switching times as a **resistance** (inductive load, _T_ vj =175°C, _V_ CE=400V, _V_ GE =0/15V, _I_ C =20A, dynamic test Figure E)
Figure 10.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =20A, _R_ Gon=23 Ω ; _R_ Goff=23 Ω , dynamic circuit in Figure E)
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**----- Start of picture text -----**<br>
6.0 2.0<br>typ. Eoff<br>5.5 min. 1.8 Eon<br>max. Ets<br>- FI LLL] Pee<br>Lu /<br>2 5.0 = 1.6 /<br>k& ae ‘S 7<br>fe)_ ~ ~SAL =n /7<br>> 4.5 —— a 1.4 7<br>ce ee<br>4.0 1.2<br>z |--——~ a > ~ < > 5 4<br>Igf 3.5 PR DB~~] 1 1.0 LE |EdezZ > Z<br>ipe 3.0 foe~~ ~ PBhw O 0.8 LLY4 a<br>E > Zz= “ 7<br>ef 2.5 PR E 0.6<br>L NN LU<br>BL<br>& 2.0 N o 0.4 L\ 24 | Pm<br>feeAA a<br>1.5 0.2<br>1.0 0.0<br>ee eee eeae<br>0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.2mA)
Figure 12.
(inductive load, _T_ vj =175°C, _V_ CE=400V, _V_ GE =0/15V, _R_ Gon=23 Ω , _R_ Goff=23 Ω , test circuit in Figure E)
9
IHW20N65R5
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**----- Start of picture text -----**<br>
1.4 1.0<br>Eoff Eoff<br>Eon 0.9 Eon<br>Ets Ets<br>1.2<br>0.8<br>1.0<br>2 a 2 0.7 :<br>0.6<br>Per) 0.8 ee<br>0.5<br>ff Ut ff<br>0.6<br>0.4<br>Plot |: P| | ft ft<br>GRRE::E 0.4 a 5 0.3 | | | | tT cf_<br>a a ee<br>0.2<br>0.2<br>r t ee<br>0.1<br>0.0 0.0<br>10 20 30 40 50 60 70 80 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistance function of junction temperature<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,<br>V GE =0/15V, I C =20A, dynamictest circuit in I C =20A, R Gon=23 Ω ; R Goff=23 Ω , dynamic test<br>Figure E) circuit in Figure E)<br>15 1E+4<br>14 130V Cies<br>520V Coes<br>13 EY— M E Cres a ee b eeee ee<br>12<br>1000<br>e 11 TPT yr<br>10<br>oe SS<br>e 98 PET 8 pp<br>; i<br>100<br>P 7 EELE 8 eee<br>6<br>B: 5 RE ETCeRSSSao<br>§ 4 TPTPP yyy 10 Seei<br>3<br>OT BSS<br>2 P/L | | | tT | tf a<br>1 7} tt | | | tf a<br>0 pe yy ey yy 1 Pt | ET Tt<br>0 10 20 30 40 50 60 70 80 90 100 0 3 6 9 12 15 18 21 24 27 30<br>Q G , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=20A) collector-emitter voltage<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 16. ( _V_ GE
10
IHW20N65R5
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**----- Start of picture text -----**<br>
ST Pas<br>1<br>S TT<br>x, | S 7 | TI<br>tu WY<br>Oo 7 Dy: Yy<br>Zz |PTT ee A TTT TT| O> 1 | IE tyYim Ma A<br>ima RH7/7, ZAllae—= D=0.5 aiga eeCIA AISTli D=0.5 CTTh<br>0.2 0.2<br>ou WgA ou TT ASEH AUTH<br>= LA 0.1 Hi) 2 imma 0.1 |<br>0.05 0.05<br>2 Conte 2 eC Tir<br>0.02 0.02<br>| (| | FZ<br>r= 0.1 apT TT all)AaPecll 0.01 TT Tt oer eonif 0.01<br>E a L 0.1 Lao<br>Zz Ieee single pulse Zz ty Eee ee single pulse Con<br>Z PTIecttfn / (1)A 920 Fe ||| 2 ACoo Eaa mii<br>feF PAri er awd -- {Il| & PV ml<br>IVA IT TI Cis Cental | nm PALI<br>A<br>i: 1 2 3 4 5 i: 1 2 3 4 5<br>ri[K/W]: 5.0E-3 0.3855072 0.3892888 0.2350033 8.5E-3 ri[K/W]: 2.523557 1.451367 0.4791582 0.2141134 0.01191211<br>——ae τ i[s]: 7.4E-6 3.4E-4 2.8E-3 0.01433068 0.208526 τ i[s]: 1.5E-4 TEU 5.9E-4 TTT 3.7E-3 vie 0.01656028 cottam 0.1999705 {il<br>0.01 0.01<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
> Figure 17. IGBT function ( _D_ = _t_ p/T)
Figure 18.
( _D_ = _t_ p/T)
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**----- Start of picture text -----**<br>
200<br>Tvj=25°C, IF = 20A<br>Tvj=175°C, IF = 20A<br>175<br>=7)<br>150<br>£<br>F<br>125<br>> ~<br>Q ~<br>100 BN ~<br>uw PP Ree T<br>ow ™<br>75<br>Ww<br>:<br>a 50<br>eff y<br>25<br>0<br>500 600 700 800 900 1000 1100 1200 1300<br>dI F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
Figure 19. Typical of diode ( _V_ R=400V)
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**----- Start of picture text -----**<br>
3.5<br>Tvj=25°C, IF = 20A<br>Tvj=175°C, IF = 20A<br>3.0<br>—= _—<br>Wy 2.5 clen<br>x oo<br>ing 2.0<br>WW<br>><br>_<br>1.5<br>wy |_. pan<br>n<br>o¢<br>1.0<br>: am<br>ci 0.5 Py yp py pe<br>0.0<br>500 600 700 800 900 1000 1100 1200 1300<br>dI F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 20.
( _V_ R=400V)
11
IHW20N65R5
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**----- Start of picture text -----**<br>
50 0<br>Tvj=25°C, IF = 20A Tvj=25°C, IF = 20A<br>45 Tvj=175°C, IF = 20A Tvj=175°C, IF = 20A<br>-500<br>TTT a =<br>40 \- z \<br>z= Za tr] | 2 J -{—<br>w~:wa 35 < 7 ISa -1000 ~ \ :<br>i) Za a “N<br>e {oot<br>30<br>1 A | 3 :<br>fe “ 7 fe) “N<br>> 25 W -1500 \<br>5 [L]<br>g<br>20 Le| < ~<br>ig | | |ee \<br>-2000<br>Ble Nae<br>15<br>Wi in<br>O<br>ff a<br>{tii<br>10<br>|| tl ye \<br>-2500<br>5<br>0 -3000<br>500 600 700 800 900 1000 1100 1200 1300 500 600 700 800 900 1000 1100 1200 1300<br>dI F /dt , DIODE CURRENT SLOPE [A/us] dI F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>60 Ld Tvj=25°C / 2.50 I a F=2,5A<br>Tvj=175°C IF=5A<br>aa [| 2.25 E IF=10A L<br>[ | IF=20A<br>50 || /<br>=<br>7 / 7 2.00<br>= 40 uw<br>Zzim / oO<x 1.75<br>a)<br>:O 30 EL vAEL./ :a 1.50 “TEL EL<br>ra / a<br>< / $<br>=x / & 1.25<br>O 20<br>a / / o<br>1.00<br>10<br>aan<br>0.75<br>i.// EE. ___|a ee ee<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
12
IHW20N65R5
Resonant�Switching�Series
**==> picture [146 x 65] intentionally omitted <==**
## **Package Drawing PG-TO247-3**
13
Rev.�2.3,��2015-12-22
IHW20N65R5
Resonant�Switching�Series
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## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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IHW20N65R5
## IHW20N65R5
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2014-06-13|Preliminarydata sheet|
|1.2|2014-06-16|-|
|2.1|2014-09-12|Final data sheet|
|2.2|2014-11-27|Update of diode forward current values|
|2.3|2015-12-22|Minor change Conditions Static Characteristic|
## party.
## **Warnings**
15
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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