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IHW20N140R5LXKSA1
IGBT, 40 A, 1.7 V, 211 W, 1.4 kV, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 211W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 1.4kV
- Collector Emitter Saturation Voltage: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.966 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
**IHW20N140R5L Reverse-Conducting IGBT** ## **Reverse-Conducting IGBT with monolithic body diode** ## **Features** - VCE = 1400 V - IC = 20 A - Powerful monolithic body diode with low forward voltage designed for soft commutation only - Very tight parameter distribution - High ruggedness, temperature stable behavior - Very low VCEsat - Easy paralleling capability due to positive temperature coefficient in VCEsat - Low EMI - Qualified according to JESD-022 for target applications - Pb-free lead plating; RoHS compliant - Halogen free (according to IEC 61249-2-21) - Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ ## **Potential applications** - Induction cooker - Microwave ovens ## **Product validation** - Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 ## **Description** **==> picture [68 x 83] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>**----- End of picture text -----**<br> |**Type**|**Package**|**Marking**| |---|---|---| |IHW20N140R5L|PG-TO247-3-STD-NN2.5|H20QR5L| Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2023-05-19 **IHW20N140R5L Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5| |**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**5**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11| |**6**|**Testing conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14| Datasheet Revision 1.00 2023-05-19 2 **IHW20N140R5L Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||||| |---|---|---|---|---|---|---| |**Table 1**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Internal emitter<br>inductance measured 5<br>mm (0.197 in.) from case|_L_E|||13||nH| |Storage temperature|_T_stg||-55||150|°C| |Soldering temperature|_T_sold|wave soldering 1.6 mm (0.063 in.) from case<br>for 10 s|||260|°C| |Mounting torque|_M_|M3 screw, Maximum of mounting processes:<br>3|||0.6|Nm| |Thermal resistance,<br>junction-ambient|_R_th(j-a)||||40|K/W| |IGBT thermal resistance,<br>junction-case|_R_th(j-c)||||0.71|K/W| |Diode thermal resistance,<br>junction-case|_R_th(j-c)||||0.71|K/W| ## **2 IGBT** |**2**<br>**IGBT**|**2**<br>**IGBT**|**2**<br>**IGBT**|||| |---|---|---|---|---|---| |**Table 2**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CE|_T_vj≥ 25 °C||1400|V| |DC collector current,<br>limited by Tvjmax|_I_C|limited by bondwire|_T_c= 25 °C|40|A| ||||_T_c= 100 °C|38|| |Pulsed collector current, tp<br>limited by Tvjmax|_I_Cpulse|||60|A| |Non repetitive peak<br>collector current_1)_|_I_CSM|||200|A| |Turn-of safe operating<br>area_2)_||_V_CE≤ 1400 V,_T_vj≤ 175 °C||60|A| |Gate-emitter voltage|_V_GE|||±20|V| |Transient gate-emitter<br>voltage|_V_GE|_t_p≤ 10 µs,_D_< 0.01||±25|V| |Power dissipation|_P_tot||_T_c= 25 °C|211|W| ||||_T_c= 100 °C|106|| _1)_ capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3 µs _2)_ dV/dt < 1 kV/µs Datasheet Revision 1.00 2023-05-19 3 **IHW20N140R5L Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT** |**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>breakdown voltage|_V_BRCES|_I_C= 0.5 mA,_V_GE= 0 V||1400|||V| |Collector-emitter<br>saturation voltage|_V_CEsat|_I_C= 20 A,_V_GE= 15 V|_T_vj= 25 °C||1.7|1.9|V| ||||_T_vj= 125 °C||1.9||| ||||_T_vj= 175 °C||2||| |Collector-emitter<br>saturation voltage|_V_CEsat|_I_C= 15 A,_V_GE= 15 V|_T_vj= 25 °C||1.55|1.75|V| ||||_T_vj= 125 °C||1.7||| ||||_T_vj= 175 °C||1.75||| |Gate-emitter threshold<br>voltage|_V_GEth|_I_C= 0.28 mA, VCE= VGE||4|5.6|6.2|V| |Zero gate-voltage collector<br>current|_I_CES|_V_CE= 1400 V,_V_GE= 0 V|_T_vj= 25 °C|||100|µA| ||||_T_vj= 175 °C||460||| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V||||100|nA| |Transconductance|_g_fs|_I_C= 20 A,_V_CE= 20 V|||17.8||S| |Input capacitance|_C_ies|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||870||pF| |Output capacitance|_C_oes|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||28||pF| |Reverse transfer<br>capacitance|_C_res|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||22||pF| |Gate charge|_Q_G|_V_CC= 1120 V,_I_C= 20 A,_V_GE= 15 V|||125||nC| |Turn-of delay time|_t_d(of)|_V_GE= 0/15 V,<br>_R_G(of)= 10 Ω,_C_r= 270 nF,<br>_L_= 77 µH,_R_= 2.2 Ω|_T_vj= 25 °C,<br>_I_C= 20 A||150||ns| ||||_T_vj= 175 °C,<br>_I_C= 20 A||160||| |Fall time (inductive load)|_t_f|_V_GE= 0/15 V,<br>_R_G(of)= 10 Ω,_C_r= 270 nF,<br>_L_= 77 µH,_R_= 2.2 Ω|_T_vj= 25 °C,<br>_I_C= 20 A||1090||ns| ||||_T_vj= 175 °C,<br>_I_C= 20 A||1890||| |Sof turn-of energy|_E_of|_V_GE= 0/15 V,<br>_R_G(of)= 10 Ω,_C_r= 270 nF,<br>_L_= 77 µH,_R_= 2.2 Ω|_T_vj= 25 °C,<br>_I_C= 20 A||0.07||mJ| ||||_T_vj= 175 °C,<br>_I_C= 20 A||0.17||| |Operating junction<br>temperature|_T_vj|||-40||175|°C| Datasheet Revision 1.00 2023-05-19 4 **IHW20N140R5L Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** ## **3 Diode** |**3**<br>**Diode**|**3**<br>**Diode**|**3**<br>**Diode**|||||| |---|---|---|---|---|---|---|---| |**Table 4**<br>**Maximum rated values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |Diode forward current,<br>limited by Tvjmax|_I_F|limited by bondwire|_T_c= 25 °C|40|||A| ||||_T_c= 100 °C|40|||| |Diode pulsed current, tp<br>limited by Tvjmax|_I_Fpulse|||60|||A| ||||||||| |**Table 5**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Diode forward voltage|_V_F|_I_F= 20 A|_T_vj= 25 °C||1.6|1.9|V| ||||_T_vj= 125 °C||1.8||| ||||_T_vj= 175 °C||1.85||| |Diode forward voltage|_V_F|_I_F= 15 A|_T_vj= 25 °C||1.5|1.8|V| ||||_T_vj= 125 °C||1.6||| ||||_T_vj= 175 °C||1.65||| |Operating junction<br>temperature|_T_vj|||-40||175|°C| _Note:_ _For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet._ _Electrical Characteristic, at T_ vj _= 25°C, unless otherwise specified._ _Dynamic test circuit, energy losses include “tail” according to Figure B. (Test circuit Figure E)._ Datasheet Revision 1.00 2023-05-19 5 **IHW20N140R5L Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **4 Characteristics diagrams** **==> picture [540 x 622] intentionally omitted <==** **----- Start of picture text -----**<br> Power dissipation as a function of case temperature Collector current as a function of case temperature<br>Ptot = f(Tc) IC = f(Tc)<br>Tvj ≤ 175 °C Tvj ≤ 175 °C, VGE ≥ 15 V<br>240 45<br>40<br>200<br>35<br>160 30<br>25<br>120<br>20<br>80 15<br>10<br>40<br>5<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>Typical output characteristic Typical output characteristic<br>IC = f(VCE) IC = f(VCE)<br>T = 25 °C T = 175 °C<br>vj vj<br>60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-05-19 6 **IHW20N140R5L Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical transfer characteristic** IC = f(VGE) ## VCE = 20 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>50<br>40<br>30<br>20<br>10<br>0<br>4 5 6 7 8 9 10 11 12<br>**----- End of picture text -----**<br> ## **Gate-emitter threshold voltage as a function of junction temperature** VGEth = f(Tvj) IC = 0.28 mA **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical collector-emitter saturation voltage as a function of junction temperature** VCEsat = f(Tvj) VGE = 15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of collector current** t = f(IC) Tvj = 175 °C, VGE = 0/15 V, Cr = 270 nF, RG = 10 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-05-19 7 **IHW20N140R5L Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching times as a function of gate resistor** t = f(RG) IC = 20 A, Tvj = 175 °C, VGE = 0/15 V, Cr = 270 nF **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>10 20 30 40 50<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of collector current** E = f(IC) VGE = 0/15 V, Cr = 270 nF, RG = 10 Ω **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0.50<br>0.45<br>0.40<br>0.35<br>0.30<br>0.25<br>0.20<br>0.15<br>0.10<br>0.05<br>0.00<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of junction temperature** t = f(Tvj) IC = 20 A, VGE = 0/15 V, Cr = 270 nF, RG = 10 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of gate resistor** E = f(RG) IC = 20 A, Tvj = 175 °C, VGE = 0/15 V, Cr = 270 nF **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0.20<br>0.19<br>0.18<br>0.17<br>0.16<br>10 20 30 40 50<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-05-19 8 **IHW20N140R5L Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching energy losses as a function of junction temperature** E = f(Tvj) VGE = 0/15 V, Cr = 270 nF, RG = 10 Ω **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical gate charge** VGE = f(QG) IC = 20 A ## **Typical switching energy losses as a function of resonant capacitance** E = f(Cr) IC = 20 A, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>100 140 180 220 260 300 340<br>**----- End of picture text -----**<br> ## **Typical capacitance as a function of collector-emitter voltage** C = f(VCE) f = 100 kHz, VGE = 0 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>12<br>9<br>6<br>3<br>0<br>0 20 40 60 80 100 120 140<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>0 5 10 15 20 25 30<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-05-19 9 **IHW20N140R5L Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **IGBT transient thermal impedance as a function of pulse width** ## **Diode transient thermal impedance as a function of pulse width** **==> picture [540 x 598] intentionally omitted <==** **----- Start of picture text -----**<br> Zth(j-c) = f(tp)th(j-c) = f(tp) = f(tp)p)) Zth(j-c) = f(tp)th(j-c) = f(tp) = f(tp)p))<br>D = tp/Tp/T/T D = tp/Tp/T/T<br>1 1<br>0.1 0.1<br>0.01 0.01<br>0.001 0.001<br>0.0001 0.0001<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1 1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>Typical diode forward current as a function of forward Typical diode forward voltage as a function of<br>voltage junction temperature<br>IF = f(VF)F = f(VF) = f(VF)F)) VF = f(Tvj)F = f(Tvj) = f(Tvj)vj))<br>60 3.5<br>50 3.0<br>40 2.5<br>30 2.0<br>20 1.5<br>10 1.0<br>0 0.5<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> **==> picture [540 x 598] intentionally omitted <==** **----- Start of picture text -----**<br> Zth(j-c) = f(tp)th(j-c) = f(tp) = f(tp)p)) Zth(j-c) = f(tp)th(j-c) = f(tp) = f(tp)p))<br>D = tp/Tp/T/T D = tp/Tp/T/T<br>1 1<br>0.1 0.1<br>0.01 0.01<br>0.001 0.001<br>0.0001 0.0001<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1 1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>Typical diode forward current as a function of forward Typical diode forward voltage as a function of<br>voltage junction temperature<br>IF = f(VF)F = f(VF) = f(VF)F)) VF = f(Tvj)F = f(Tvj) = f(Tvj)vj))<br>60 3.5<br>50 3.0<br>40 2.5<br>30 2.0<br>20 1.5<br>10 1.0<br>0 0.5<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-05-19 10 **IHW20N140R5L Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **5 Package outlines** ## **5 Package outlines** ## **PG-TO247-3-STD-NN2.5** **==> picture [275 x 125] intentionally omitted <==** **==> picture [99 x 83] intentionally omitted <==** **==> picture [32 x 41] intentionally omitted <==** |PACKAGE - GROUP<br>NUMBER:|MIN.<br>MAX.<br>**MILLIMETERS**<br>**PG-TO247-3-U06**<br>2.16<br>1.85<br>5.44<br>20.80<br>0.55<br>1.07<br>15.70<br>4.10<br>5.49<br>3.50<br>19.80<br>16.25<br>1.33<br>0.68<br>21.10<br>6.00<br>3.70<br>4.47<br>20.32<br>16.13<br>17.65<br>4.83<br>2.27<br>5.21<br>2.54<br>2.87<br>3.38<br>0.95<br>1.35<br>13.10<br>14.15<br>3<br>1.90<br>2.41<br>3.68<br>5.10<br>1.00<br>2.60<br>6.04<br>6.30| |---|---| |**DIMENSIONS**|| ||MIN.| |**A**|4.83| |**A1**|2.27| |**A2**|1.85| |**b**|1.07| |**b1**|1.90| |**b2**|2.87| |**c**|0.55| |**D**|20.80| |**D1**|16.25| |**D2**|0.95| |**E**|15.70| |**E1**|13.10| |**E2**|3.68| |**E3**|1.00| |**e**|| |**N**|| |**L**|19.80| |**L1**|4.10| |**øP**|3.50| |**Q**|5.49| |**S**|6.04| ## **Figure 1** Datasheet Revision 1.00 2023-05-19 11 **IHW20N140R5L Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **6 Testing conditions** **==> picture [185 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 6 Testing conditions<br>**----- End of picture text -----**<br> **==> picture [434 x 608] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) 90% V GE<br>I,V<br>t<br> V CE<br> V GE<br>I (t) �0% I C<br> I CE<br>2% I C<br>t<br>t<br>Figure C. Typical switching behavior<br>in resonant applications<br>V CE (t)<br>t<br>t f t<br>t<br>d(off)<br>Figure A.<br>V GE (t) 90% V GE<br>Figure D.<br>t<br>I C (t)<br> R<br>CC<br>1% I C<br>t<br> V CE (t) t 2 Figure E. Dynamic test circuit<br>E off [=] t 1 V CE x I C x d t Resonant capacitor, Damping resistor, R C r<br>t<br>t 1 t 2<br>Figure B.<br>**----- End of picture text -----**<br> ## **Figure 2** Datasheet Revision 1.00 2023-05-19 12 **IHW20N140R5L Reverse-Conducting IGBT** **==> picture [105 x 47] intentionally omitted <==** **Revision history** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2022-11-25|Preliminary datasheet| |1.00|2023-05-19|Final datasheet| Datasheet Revision 1.00 2023-05-19 13 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2023-05-19 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2023 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABC675-002** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **Warnings** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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