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IHW20N135R5XKSA1
IGBT, 40 A, 1.65 V, 288 W, 1.35 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:288W; Collector Emitter Voltage V(br)ceo:1.35kV; Transistor Case Style:TO-247; No. of
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP™
- Power Dissipation: 288W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 1.35kV
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.26 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
# IHW20N135R5
IHW20N135R5
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Features: C<br>¢ Offers high breakdown voltage of 1350V for improved reliability<br>* Powerful monolithic body diode with low forward voltage<br>designed for soft commutation only<br>* TRENCHSTOP_ technology offering:<br>G<br>- very tight parameter distribution<br>E<br>- high ruggedness, temperature stable behavior<br>- low V CEsat<br>- easy parallel switching capability due to positive<br>temperature coefficient in V CEsat _<br>¢« Low EMI G ppp<br>* Qualified according to JESD-022 for target applications 7024)°0m<br>¢ Pb-free lead plating; ROHS compliant<br>¢ Halogen free (according to IEC 61249-2-21) , &<br>*« Complete product spectrum and PSpice Models: 7<br>http://www.infineon.com/igbt/<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
## **Applications:**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW20N135R5|1350V|20A|1.65V|175°C|H20PR5|PG-TO247-3|
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IHW20N135R5
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## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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Resonant�Switching�Series
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||1350|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||40.0<br>20.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||60.0|A|
|Non repetitivepeak collector current1)|_I_CSM||200|A|
|Turnoffsafeoperatingarea_V_CE≤1350V,_T_vj≤175°C|-||60.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||40.0<br>20.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||60.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±25|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||288.0<br>144.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.52|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||0.52|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
1) capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3µs
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IHW20N135R5
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## Resonant�Switching�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1350|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|1.85<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|1.90<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|5.1|5.8|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1350V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>350.0|100.0<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|15.8|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1360|-|pF|
|Output capacitance|_C_oes||-|43|-||
|Reverse transfer capacitance|_C_res||-|34|-||
|Gate charge|_Q_G|_V_CC=1080V,_I_C=20.0A,<br>_V_GE=15V|-|170.0|-|nC|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=600V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|235|-|ns|
|Fall time|_t_f||-|50|-|ns|
|Turn-off energy|_E_off||-|0.95|-|mJ|
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## Resonant�Switching�Series
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=175°C,<br>_V_CC=600V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|350|-|ns|
|Fall time|_t_f||-|100|-|ns|
|Turn-off energy|_E_off||-|2.00|-|mJ|
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300<br>ee<br>PT Te<br>PT ATT TTT<br>A 250 Naa<br>pA L not for linear use E \<br>:=| 10 ( lilSt rom a ol)<br>200<br>oe | ct Titi fT Tei ht TTT fT y<br>a) PT TTTT i<br>° ee 150 \<br>S UUMTTT TIT Tye }<br>SME4 1 LIM LIL) 100 \<br>fe)Oo eea eee =2- \<br>Pt TTT TT TTT TTT TT<br>- eeaPT TTT TT 50 SaaaN\_<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj =175°C; V GE =15V,t p=1µs) temperature<br>( T vj ≤ 175°C)<br>40 60<br>35 VGE=20V<br>KEEL) PEA<br>50<br>17V<br>30<br>15V<br>z BN z i|<br>40 13V<br>25<br>2eP Nas‘ : | ey 11V HW<br>6)Bf UN 6) | 9V |<br>© 20 © 30<br>7V<br>15 5V<br>SB4 eeeNEST 4 anGe\ :<br>20<br>EK tp A<br>10<br>‘ 2) aan<br>10<br>PNT ER<br>5<br>PN LAX<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
Figure 4. Typical ( _T_ vj=25°C)
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IHW20N135R5
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60 60<br>Tj=25°C<br>Tj=175°C<br>| V/s a<br>VGE=20V<br>50 a ee / 50<br>17V<br>15V<br>zE 40 13V a4ay), a zE 40 |<br>q STV a<br>ia 11V ia<br>: 9V awa :<br>3 30 tA 3 30<br>7V<br>|| 5V<br>5 20 \ WX a a | 20<br>© WO/ ©<br>M<br>10 IP 10<br>0 A | N N | | 0 y)<br>0 1 2 3 4 5 0 2 4 6 8 10 12<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=175°C)
Figure 6. Typical ( _V_ CE=20V)
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3.0<br>IC=3A td(off)<br>IC=10A tf<br>IC=20A 1000<br>= 2.5 IC=40A peas a a<br>fe) oO a a<br>fe _ a<br>cr Le al w espoee<br>2.0<br>E ee De<br>7A)<br>2 ee<br>= 1.5 oO<br>= Zz<br>100<br>5 KE a a<br>1.0 a ee eee — = a<br>rt [—— —— ” a<br>= ee ee ee ee ee eee<br>6 pottT<br>0.5<br>0.0 10<br>0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 40<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G(on)=10 Ω , _R_ G(off)=10 Ω , test circuit in Figure E)
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ee td(off)<br>tf<br>1000 a<br>aa a a ee<br>a eee eee eee<br>i em | | | ft | ht<br>a<br><<br>100<br>eSs |__|—_|_|___|__}___|__|__j<br>= Poea a a<br>@ po<br>- a ee ee ee<br>a<br>FP | | | tt tt<br>10<br>10 20 30 40 50<br>R G , GATE RESISTANCE [ Ω ]<br>t<br>**----- End of picture text -----**<br>
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1000<br>a a | td(off)<br>tf<br>| a ee<br>a e a eee e ee<br>a ee eeee<br>|_———____]<br>a eee<br>i<br>100<br>< a a ee<br>ee ee aa<br>89 fe<br>BP<br>-<br>a ee ee ee ee<br>pf fp | |<br>10<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>**----- End of picture text -----**<br>
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Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistance junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =20A, dynamic test circuit in I C =20A, R G(on)=10 Ω , R G(off)=10 Ω , dynamic<br>Figure E) test circuit in Figure E)<br>8 4<br>typ.<br>min.<br>max.<br>so f z {itty<br>7<br>g > J<br>3 E off<br>Ww<br>6<br>o<br>O—<br>x 5 “te h~ x 2<br>i ~st oN Zz<br>“ ef Ww<br>uy 4 a Y O<br>uw . = 1<br>; ~S ~ Z<br>3<br>o 4) Zn<br>2 0<br>0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 40<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11.
Figure 12.
( _I_ C design)
(inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G(on)=10 Ω , _R_ G(off)=10 Ω , dynamic test circuit in Figu
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4 2.5<br>2.0<br>7p) 3 E off 7p) E off<br>Ww Ww<br>7) 7)<br>a 1.5<br>:<br>oe 2 ||—| rg2<br>WwZzZ WwZzZ 1.0 T= —_<br>OO<br>EE<br>== 1<br>0.5<br>0 0.0<br>10 20 30 40 50 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistance function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =20A, dynamic test circuit in I C =20A, R G(on)=10 Ω , R G(off)=10 Ω , dynamic<br>Figure E) test circuit in Figure E)<br>3.0 20<br>270V<br>1080V<br>p P| | o | | le4 fd Yh/\"<br>2.5<br>: E off | | Z /\"|<br>15<br>i ZO /<br>(ep) ke /<br>O a<br>e ee eee eee<br>a 2.0 O 7<br>© x ,<br>s r eee<br>th | ui 10 ‘<br>g 1.5 ot<br>ee Ae ee ee<br>SsO fo <x<br>Ee Oo<br>a 5<br>|<br>1.0<br>0.5 0<br>400 500 600 700 800 900 1000 0 50 100 150 200 250<br>V CE COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=20A)
(inductive load, _T_ vj =175°C, _V_ GE=0/15V, _I_ C =20A, _R_ G(on)=10 Ω ; _R_ G(off)=10 Ω , test circuit in Figure E)
10
IHW20N135R5
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1<br>Cies a<br>Coes<br>Cres Gar ae<br>C ee [FCCC,] a ee |<br>1000 o PT T eP ag OEorICAeMll<br>D=0.5<br>_Bp a | a oe 0.1 EeUTeeii) fo 0.2<br>0.1<br>we ooo 2<br>A yaa 7 anti 0.05<br>0.02<br>S See E2EEE5 ge 0.01<br>PR single pulse elt Hl<br>100<br>S ee<br>- fee Ill<br>pNPeee eee 0.01 beeeni<br>0 e r<br>SSeS F8 HEG! EH| i<br>Pf yf pee =-Fe to . | ||<br>PATTIE TTT ETI TE TT<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.01386372 0.0338046 0.1412901 0.302491 0.02700266 1.9E-3<br>τ i[s]: 3.0E-5 2.1E-4 2.1E-3 0.0110047 0.07241154 1.854229<br>10 0.001<br>0 10 20 30 40 50 60 70 80 90 100 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1 40<br>Tj=25°C<br>Tj=175°C<br>— aa a | TT /<br>= PT TTT TTT TT PT /<br>ee /<br>ee |<br>30<br>Ww eee eee Ae D=0.5 |;<br>< UL iA “<br>LuOo.= 0.1 |eeeee(I 0.2 | kKz ’ v7<br>0.1<br>=S EliePea 0 a A Wwfaa 17<br>a rth CART 0.05 OCT w ’<br><x ae ee 0.02 ITu = 1 | ff ft<br>20<br>a a UNet 0.01<br>ST<br>| ol single pulse UMMM & /<br>et<br>0.01<br>DZ Sete ile eet ei inte ll §<br>a -- |i] 10<br>s meet a a<br>E ED lll<br>- PC AN<br>PATTIE cctv cant<br>i: 1 2 TTT 3 EI 4 TE 5 6 TT 7<br>ri[K/W]: 0.01386372 0.0338046 0.1412901 0.302491 0.02700266 1.9E-3<br>τ i[s]: 3.0E-5 2.1E-4 2.1E-3 0.0110047 0.07241154 1.854229<br>0.001 0<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>t p , PULSE WIDTH [s] V F , FORWARD VOLTAGE [V]<br>I F<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 19. Diode function ( _D_ = _t_ p/T)
Figure 20.
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**----- Start of picture text -----**<br>
3.0<br>IF=3A<br>IF=10A<br>FE IF=20A Jt<br>IF=40A<br>a —|—<br>2.5<br>a<br>=. Eee anee<br>(O) _<br><x a n<br>Kk 2.0<br>I<br>><br>eee<br>Q<br>x<br>gfe= 1.5<br>o<br>i<br>Boop<br>1.0 Pit ttt tt<br>0.5<br>0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 21.
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Resonant�Switching�Series
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## PG-TO247-3
13
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IHW20N135R5
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## Resonant�Switching�Series
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V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>GE (t)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
Figure D.
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**----- Start of picture text -----**<br>
CC<br>Figure E. Dynamic test circuit<br>Parasitic inductance Ls,<br>parasitic capacitor Cs,<br>relief capacitor C ,r<br>(only for ZVT switching)<br>**----- End of picture text -----**<br>
14
Rev.�2.1,��2015-01-26
IHW20N135R5
**==> picture [146 x 65] intentionally omitted <==**
## Resonant Switching Series
## Revision History
IHW20N135R5
Revision: 2015-01-26, Rev. 2.1
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2014-01-23|Preliminarydata sheet|
|2.1|2015-01-26|Final data sheet|
## We Listen to Your Comments
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Please send your proposal (including a reference to this document) to: erratum@infineon.com
Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2015 Infineon Technologies AG All Rights Reserved.
## Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.1, 2015-01-26
15
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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