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IHW20N135R3FKSA1
IGBT, 40 A, 1.6 V, 310 W, 1.35 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP™
- Power Dissipation: 310W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 1.35kV
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 3.09 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
# IHW20N135R3
IHW20N135R3
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Features: C<br>* Offers new higher breakdown voltage to 1350V for improved<br>reliability<br>* Powerful monolithic body diode with low forward voltage<br>designed for soft commutation only<br>G<br>* TRENCHSTOP_ technology offering:<br>E<br>- very tight parameter distribution<br>- high ruggedness, temperature stable behavior<br>- low V CEsat<br>- easy parallel switching capability due to positive —<br>CEsat<br>temperature coefficient in V G ppp<br>* Low EMI 70.3, f0On<br>* Qualified according to JESD-022 for target applications<br>¢ Pb-free lead plating; ROHS compliant , &<br>¢ Halogen free (according to IEC 61249-2-21) a<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
## **Applications:**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW20N135R3|1350V|20A|1.6V|175°C|H20R1353|PG-TO247-3|
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IHW20N135R3
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## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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IHW20N135R3
Resonant�Switching�Series
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||1350|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||40.0<br>20.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||60.0|A|
|Turnoffsafeoperatingarea_V_CE≤1350V,_T_vj≤175°C|-||60.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||40.0<br>20.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||60.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±25|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||310.0<br>155.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+175||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.48|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||0.48|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
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IHW20N135R3
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## Resonant�Switching�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1350|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|1.80<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.73<br>1.80|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|5.1|5.8|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1350V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|100.0<br>2500.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|14.8|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1500|-|pF|
|Output capacitance|_C_oes||-|55|-||
|Reverse transfer capacitance|_C_res||-|45|-||
|Gate charge|_Q_G|_V_CC=1080V,_I_C=20.0A,<br>_V_GE=15V|-|195.0|-|nC|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=600V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|335|-|ns|
|Fall time|_t_f||-|50|-|ns|
|Turn-off energy|_E_off||-|1.30|-|mJ|
Rev.�2.2,��2015-01-26
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IHW20N135R3
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## Resonant�Switching�Series
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=175°C,<br>_V_CC=600V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|405|-|ns|
|Fall time|_t_f||-|100|-|ns|
|Turn-off energy|_E_off||-|2.25|-|mJ|
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IHW20N135R3
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70<br>PAA UIE<br>100<br>EAN | UIT I<br>60<br>a<br>\ \ CHS<br>_ \ _ a ee<br>50<br>zg ai =g Bape tp=1µs Sece<br>10<br>ocSTI3 40 TNAA \TN oc§ (CooRCSESEeS 5µs ae Sse ee cnet<br>oO —<br>oO INN 3 RRS<br>oc TC=80° a 10µs<br>5 | ac es<br>30<br>° TC=110° JN P 50µs tteee<br>4 ma \ ee 1ms ct<br>an 20 \ oOal2 1 JCS— HHH J} HE] \ ER}nN ‘ ——$}<br>10ms<br>DC<br>\ iOeCPLeei<br>10<br>CU | ATM ASMSS a eeee<br>0 0.1<br>1 10 100 1000 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V)<br>( T vj ≤ 175°C, D =0.5, V CE =600V, V GE=0/15V,<br>R G=15 Ω )<br>I C I C<br>**----- End of picture text -----**<br>
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350 45<br>40<br>300<br>\<br>35<br>\ NEEL<br>250<br>e |S STINT TLL<br>30<br>= oe<br>fe) x a N<br>200<br>D \ S) 25 \<br>j \ : 20 \<br>ow 150 \ 5<br>15<br>fe); \ PN5 \<br>100<br>5 en RNG<br>10<br>50<br>5<br>INE ETL TEEN<br>0 0<br>PULA) | ETT<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>P tot I C<br>**----- End of picture text -----**<br>
> Figure 3. Power **temperature** ( _T_ vj ≤ 175°C)
Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
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IHW20N135R3
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60 60<br>VGE=20V VGE=20V<br>50 50<br>17V 17V<br>15V 15V<br>40 13V 40 13V<br>©) AW le LX IL<br>11V 11V<br>a) a)<br>9V 9V<br>© 30 of © 30 \ A<br>o8 7V 9: 7V \V/\V,;<br>= 5V<br>a 20 20<br>a)\ —— a \ WY — |<br>10 ee) 10 4a<br>FF \| Ag~<br>0 0 \<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T vj=25°C) ( T vj=175°C)<br>70 3.0<br>Tj=25°C IC=10A<br>Tj=175°C IC=20A<br>IC=40A<br>60 ES}. EL<br>z<br>Ee 2.5<br><_ 50 e ae<br>, ra<br>iapL 40 I a<br>ac = 2.0 :<br>| ES<br>ToeO 3020 WW aa ry<br>1.5<br>10 Po ® Epp<br>0 1.0<br>0 PT 2 T 4 6 AT 8 10 12 0 co 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C I C<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical ( _V_ CE=20V)
Figure 8. Typical a function ( _V_ GE=15V)
8
IHW20N135R3
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td(off) td(off)<br>tf tf<br>1000 1000<br>a a a a as<br>a a a ae<br>Ppa oN a a eeeee<br>ae ee ee ee ee a a eeee<br>z a eee ee Poe<br>S | | | | | [|<br>Lu<br>Lu Tope fe] ft | | tl<br>ee ee<br>oO oO<br>Zz a ~~ ef Zz<br>5 100 es 5 100 a es<br>E=aaa<br>=a a a a COeea ie a a esaeeeeOe ee ee ee<br>a<br>Ss ee<br>10 10<br>0 10 20 30 40 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistance<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, T vj =175°C, V CE=600V,<br>V GE =0/15V, R G(on)=15 Ω , R G(off)=15 Ω , dynamic V GE =0/15V, I C =20A, dynamic test circuit in<br>test circuit in Figure E) Figure E)<br>a 8<br>td(off) typ.<br>tf max.<br>min.<br>1000 a ee Lu<br>aa a 7<br>a<br>a<br>pf ff ft fp fp ft pt . re<br>7 -EEPePP rrr $s 6 i<br>= ee a OOO a — _<br>uw we<br>E uw ~N<br>gE eeN<br>(V) x 5 = hw ‘Ss<br>Zz - a a<br>5 100 a ee ee ee x<br>E=aa<br>a ee a ee ee ee ee eee = .<br>4<br>P| |gg<br>3<br>PT Ty yyy yyy yy ®<br>10 2<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11.
(inductive load, _V_ CE =600V, _V_ GE=0/15V, _I_ C =20A, _R_ G(on)=15 Ω : _R_ G(off)=15 Ω , test circuit in Figure E)
Figure 12.
( _I_ C=0.5mA)
9
IHW20N135R3
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4 4<br>7p) 3 E off 7p) 3 E off<br>Ww Ww<br>Pe vy L E ee<br>fe A fe) |__| _—<br>J<br>.<br>:<br>2 2<br>2 / : =<br>ZzO WiJ 2ZzO<br>O O<br>FE 1 / FE 1<br>0 0<br>0 10 20 30 40 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistance<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, T vj =175°C, V CE=600V,<br>V GE =0/15V, R G(on)=15 Ω , R G(off)=15 Ω , V GE =0/15V, I C =20A, dynamic test circuit in<br>dynamic test circuit in Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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4 4<br>E off E off<br>BE 3 |e EB 3 |e<br>op) | Z<br>7) 7)Ww<br>Ww op) wa<br>—! —! W<br>teBTL 2 TttithesJ -T| & 2 EUSL<br>72 [ee 7g<br>EF EF<br>Pe== 1 1 EE<br>0 0<br>25 50 75 100 125 150 175 400 500 600 700 800 900 1000 1100 1200<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16.
(inductive load, _V_ CE =600V, _V_ GE=0/15V, _I_ C =20A, _R_ G(on)=15 Ω , _R_ G(off)=15 Ω , test circuit in Figure E)
(inductive load, _T_ vj =175°C, _V_ GE=0/15V, _I_ C =20A, _R_ G(on)=15 Ω , _R_ G(off)=15 Ω , test circuit in Figure E)
10
IHW20N135R3
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2.5 16<br>IC=40A, Tj=25°C 270V<br>IC=40A, Tj=175°C 1080V<br>14<br>Ey J E<br>mp)- 2.0 | to av7<br>ra 12 foe<br>| 1.5 i ~ 10 ) :<br>ee ee eee<br>BT: Te‘ tgag 8 Ir a e<br>gp Z e [ff<br>a<br>1.0<br>2 , WwW 6<br>oO | 4 A =<br>Pea AH/ Wwas<br>4<br>nd)<br>0.5<br>2<br>eee pL PE<br>Aas ae<br>PT<br>0.0 T r } 0 EEEEE<br>100 1000 0 50 100 150 200<br>dv/dt , VOLTAGE SLOPE [V/us] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 17.
Figure 18. Typical ( _I_ C=20A)
(inductive load, _T_ vj =175°C, _V_ GE=0/15V, _I_ C =20A, _R_ G=15 , dynamic test circuit Figure E)
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**----- Start of picture text -----**<br>
1<br>a ee ee ee<br>Ciss<br>Coss<br>Crss<br>KERR ERE HH 2 GRIESE a<br>a Tie ia D=0.5<br>To LT Li — y<br>1000 7 8 Senn SN iawaN at al<br>0.2<br>SSSSSSS=S—S6 0.1 UAac 0.1 lil<br>0.05<br>= uw Smee 2a ethe<br>8 ea eto) Cee<br>0.02<br>é pt | tt tt z connDeal AffcrnLett ae Mo<br>0.01<br>f£ Fi] | | |) | | ls 07<br>O H in all|e single pulse TT]<br>By =<br>ani<br>100<br>ee ee A<br>. = —_} —_}+—__}—_ + —_ + —_ +_ +—_ + Ww 0.01 St HE tH<br>a 9 CA HC<br>aSPSSa a rs 4e H] 2 il<br>a a a a asee | |<br>PE eet Aa<br>i: 1 2 3 4 5 6<br>ri[K/W]: 9.8E-3 0.01407993 0.0698 0.1158 0.1569 0.1137<br>τ i[s]: 2.8E-5 4.7E-5 2.0E-4 1.2E-3 9.9E-3 0.08835259<br>10 0.001<br>0 10 20 30 40 50 60 70 80 90 100 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 19.
> Figure 20. IGBT ( _D_ = _t_ p/T)
( _V_ GE
11
IHW20N135R3
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**----- Start of picture text -----**<br>
1 40<br>=e ee /<br>PT | en ee ea Tj=25°C 1t<br>Tj=175°C<br>> | || E_] | / ' 7<br>= a a ee eee em ;<br>Ww aeraat | AB 1<br>D=0.5<br>9 ot al 30 ;<br>0.2<br>7p)7) 0.1 ||ettllae 0.1 sd-<br>0.05<br>LuWd Seata)ese 7 sat| eT1 LW ;T<br>0.02<br>7 ne Ca. w '<br>= I Lact ee 1| ) /<br>0.01 20<br>BE ul single pulse 8 i;<br>wTF Iee lll & /<br>5 HY = ‘i<br>2 0.01 Lyi! Oa r<br>Z Ce al<br>s ET -- {il 10<br>A II<br>- LI TMT PII | eseeves cemrere Ih<br>i: 1 2 3 4 5 6<br>Ar ri[K/W]: LE 9.8E-3 COC 0.0141 0.0698 0.1158 0.1569 TTT 0.1137 TT 7<br>τ i[s]: 2.8E-5 4.7E-5 2.0E-4 1.2E-3 9.9E-3 0.08835259<br>0.001 0<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>t p , PULSE WIDTH [s] V F , FORWARD VOLTAGE [V]<br>I F<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 21. Diode function ( _D_ = _t_ p/T)
Figure 22.
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3.0<br>IC=10A<br>IC=20A<br>IC=40A<br>2.5<br>Ww<br><<br>Kk<br>_!<br>><br>Q 2.0<br>x<br><x<br>a<br>:i 1.5 beer TTT | LL |<br>jt ty<br>1.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 23.
12
IHW20N135R3
Resonant�Switching�Series
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## PG-TO247-3
13
Rev.�2.2,��2015-01-26
IHW20N135R3
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## Resonant�Switching�Series
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V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>GE (t)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
Figure D.
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**----- Start of picture text -----**<br>
CC<br>Figure E. Dynamic test circuit<br>Parasitic inductance Ls,<br>parasitic capacitor Cs,<br>relief capacitor C ,r<br>(only for ZVT switching)<br>**----- End of picture text -----**<br>
14
Rev.�2.2,��2015-01-26
IHW20N135R3
**==> picture [146 x 65] intentionally omitted <==**
## Resonant Switching Series
## Revision History
IHW20N135R3
Revision: 2015-01-26, Rev. 2.2
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2011-05-03|Final data sheet|
|2.2|2015-01-26|Minor changes|
## We Listen to Your Comments
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Please send your proposal (including a reference to this document) to: erratum@infineon.com
Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2015 Infineon Technologies AG All Rights Reserved.
## Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.2, 2015-01-26
15
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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