Image not available
Illustrative purposes only
IHW20N120R5XKSA1
IGBT, 40 A, 1.55 V, 288 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:288W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pi
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP™
- Power Dissipation: 288W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.34 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
# IHW20N120R5 IHW20N120R5 **==> picture [469 x 255] intentionally omitted <==** **----- Start of picture text -----**<br> Features: C<br>¢ Powerful monolithic body diode with low forward voltage<br>designed for soft commutation<br>* TRENCHSTOP_ technology offering:<br>- very tight parameter distribution<br>G<br>- high ruggedness, temperature stable behavior<br>E<br>- low V CEsat<br>- easy parallel switching capability due to positive<br>temperature coefficient in V CEsat<br>« Low EMI<br>¢ Pb-free lead plating; ROHS compliant 2<br>¢ Halogen free (according to IEC 61249-2-21) a,<br>* Complete product spectrum and PSpice Models: rp tinegy<br>http://www.infineon.com/igbt/<br>Applications:<br>* Inductive cooking<br>¢ Inverterized microwave ovens<br>« Resonant converters G<br>¢ Soft switching applications C<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IHW20N120R5|1200V|20A|1.55V|175°C|H20MR5|PG-TO247-3| Datasheet www.infineon.com 2019-09-19 IHW20N120R5 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 3 V�2.2 2019-09-19 Datasheet IHW20N120R5 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||40.0<br>20.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||60.0|A| |Non repetitivepeak collector current1)|_I_CSM||200|A| |Turn off safe operating area<br>_V_CE≤1200V,_T_vj≤175°C,_t_p=1µs|-||60.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||40.0<br>20.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||60.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±25|V| |Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||288.0<br>144.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.52|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.52|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 1) capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3µs V�2.2 2019-09-19 Datasheet 4 IHW20N120R5 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.55<br>1.75<br>1.80|1.75<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.75<br>1.85|1.85<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|5.1|5.8|6.4|V| |Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>300|100<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|15.2|-|S| |Integratedgate resistor|_r_G|||none||Ω| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1340|-|pF| |Output capacitance|_C_oes||-|43|-|| |Reverse transfer capacitance|_C_res||-|34|-|| |Gate charge|_Q_G|_V_CC=1080V,_I_C=20.0A,<br>_V_GE=15V|-|170.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=600V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|260|-|ns| |Fall time|_t_f||-|50|-|ns| |Turn-off energy|_E_off||-|0.75|-|mJ| V�2.2 2019-09-19 Datasheet 5 IHW20N120R5 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-off delaytime|_t_d(off)|_T_vj=175°C,<br>_V_CC=600V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|350|-|ns| |Fall time|_t_f||-|90|-|ns| |Turn-off energy|_E_off||-|1.55|-|mJ| 6 V�2.2 2019-09-19 Datasheet IHW20N120R5 **==> picture [475 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 100 300<br>Pt TATETT<br>ee a eee 250 \<br>PLAT TE 7<br>a aee<br>= AUNTIE 2 LIN<br>5 10 a eee eee eee Zz 200 \<br>x a<br>5) a ee ee x<br>Bo FREES] aN<br>oe e eer a 150 \ :<br>ll<br>not for linear use<br>fe)5 1 |ee IIEeETT I s2 100 \<br>SESE SHE SHS<br>PT TTTT<br>ee=e et 50 \<br>ee<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE =15V, t p=1µs) temperature<br>( T vj ≤ 175°C)<br>40 60<br>VGE=20V<br>17V<br>35<br>50 15V<br>30 13V<br>eCNBNE\ EER, 40 Yp 11V | /<br>25 9V<br>: 7V I<br>20 30<br>S : 5V SH<br>eeeNSS 15 &4 HY<br>4 TE e<br>20<br>10<br>g \ 8 \W>—<br>10<br>5<br>pi tT TNO a<br>PN LEAK<br>0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br> Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C) Figure 4. Typical ( _T_ vj=25°C) Datasheet 7 2019-09-19 IHW20N120R5 **==> picture [232 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>VGE=20V<br>17V<br>50 15V a ee a,<br>13V<br>11V<br>40<br>E TOY Z|<br>9V<br>a ML<br>=) 7V 7<br>30<br>x 5V : NN Uf/<br>O )<br>WwS \ S//<br>a \A In<br>Q 20 \ / iy, —<br>O W/4 —<br>. ) UX<br>Ix<br>10<br>0 ) A NG US<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br> Figure 5. Typical ( _T_ vj=175°C) **==> picture [230 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>Tj=25°C<br>Tj=175°C<br>50<br>40<br>E fi<br>a<br>=)<br>30<br>x<br>O<br>WwS<br>a<br>Q 20<br>O<br>.<br>10<br>0<br>0 2 4 6 8 10 12<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br> Figure 6. Typical ( _V_ CE=20V) **==> picture [471 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5 1000 a<br>IC=3A I td(off) ne ee<br>IC=10A tf<br>—— ee ee<br>IC=20A<br>3.0 IC=40A<br>Ss poo<br>Z P| Ee<br>F e hee<br>: 2.5 ef<br>2.0 =<br>ar- _. -: LEE ELLE<br>100<br>nT _— r= ee ee ee ee eee<br>1.5<br>ov = O a ee ee ee<br>O -— FE a ee ee<br>5 = eeee ee ee eee<br>m ee ee ee<br>1.0<br>0.5<br>0.0 10<br>0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br> Figure 7. Typical a function ( _V_ GE=15V) Figure 8. (inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G(on)=10 Ω , _R_ G(off)=10 Ω , test circuit in Figure E) 8 Datasheet 2019-09-19 IHW20N120R5 **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1E+4 SS 1000 a a a<br>i 1 ttd(off)f aa SC I _———— ttd(off)f a ee ee ee<br>>> I e e esee<br>Pot ft | ld}> >| 4 YJ a +p a }o—} —<br>z= 1000 a se ee= oe<br>on a esesee<br>im aa a a eeee ee |on<br>= rr ee ee ee eee eee =<br>100<br>ee—= = a eseeee eeee<br>100<br>O = a eeeee<br>0 eS ese<br>a a<br>a ee a ee ee ee<br>a De De<br>Pf; ft | hm] |||<br>10 10<br>10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br> **==> picture [83 x 17] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 9. Typical<br>resistance<br>**----- End of picture text -----**<br> Figure 10. (inductive load, _V_ CE =600V, _V_ GE=0/15V,=0/15V, _I_ C =20A, _R_ G(on)=10=10 Ω ' _R_ G(off)=10=10 Ω , test circuit in Figure E) **==> picture [471 x 330] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,=0/15V,<br>V GE =0/15V, I C =20A, dynamic test circuit in I C =20A, R G(on)=10=10 Ω ' R G(off)=10=10 Ω , dynamic<br>Figure E) test circuit in Figure E)<br>8 3.5<br>typ. E off<br>min.<br>7 max.<br>3.0<br>Ww<br>6<br>—<br>3 i fo<br>2.5<br>e a e~ Say (op) fo<br>5 5 ~ ~~ ~ ro)<br>9 i <e : 2.0 VA<br>7) ~~ > a 7<br>4<br>~ Zz<br>;- :i Banefo<br>x sy Lu 1.5 /<br>E= 3 2r /<br>=<br>uw 1.0<br>f 2<br>0.5<br>1<br>0 0.0<br>0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. Figure 12. **==> picture [30 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> ( I C<br>design)<br>**----- End of picture text -----**<br> (inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G(on)=10 Ω , _R_ G(off)=10 Ω , dynamic test circuit in Figure E) 9 Datasheet 2019-09-19 IHW20N120R5 **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0 1.7<br>E off E off<br>1.5<br>2.5<br>1.3<br>2<br>2 2.0<br>1.1<br>é 2 ZO<br>| ,<br>oc 1.5 |} oc 0.9 ZA<br>Ww Ww<br>Z Zz wea<br>Zz Zz 0.7<br>OO 1.0<br>EE<br>0.5<br>0.5<br>0.3<br>0.0 0.1<br>10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br> Figure 13. **==> picture [151 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T vj =175°C, V CE=600V,<br>V GE =0/15V, I C =20A, dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> Figure 14. (inductive load, _V_ CE =600V, _V_ GE=0/15V, _I_ C =20A, _R_ G(on)=10 Ω ' _R_ G(off)=10 Ω , test circuit in Figure E) **==> picture [491 x 342] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0 20<br>E off 240V<br>i— _ | 960V /<br>18<br>= | /<br>_ 2.5 T T T AA/<br>Ss 16 L<br>£><br>;eee 14<br>j 2.0 —| x ff<br>12<br>S a : /<br>&<br>1.5 10<br>g<br>8<br>o) |— eo 2i P||<br>oOxrE 1.0 <xE O 6 L e<br>n<br>4<br>0.5<br>2<br>aaa PEE<br>0.0 0<br>400 500 600 700 800 900 1000 0 25 50 75 100 125 150 175 200 225 250<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=20A)<br>(inductive load, T vj =175°C, V GE=0/15V,<br>I C =20A, R G(on)=10 Ω ; R G(off)=10 Ω , dynamic<br>test circuit in Figure E)<br>GE<br>V<br>E<br>**----- End of picture text -----**<br> 10 Datasheet 2019-09-19 ## IHW20N120R5 **==> picture [478 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 1E+4 1<br>le Pt<br>|1 Cies aa ssa es es a || | |<br>I Coes |<br>I Cres a ee ee ee PT Pe<br>a a ee ee ee = TT<br> e w pan ae<br>p o -- a a 4A D=0.5<br>Z TN eA 0.2 ill<br>LL— 1000 W a M z 0.1 OYEEEMe27’ eZ| Tl 0.1 til<br>SB a es — a 0.05 a<br>Ww Pe SSS 8) ee<br>oO a a OO Cee Ari 0.02 CO<br>z po pte | A 0.01 LUT<br>eg DEMNII Dean oeeee mmnest LTT<br>F S f o single pulse<br>a rr ee ee ee z = el All<br>Sn ee ee ee HHL 77ee<br>Zz<br>0. 100 NNG ee ee uw 0.01 ett)70 200 |<br>a a ee (dp) 7. A |<br>a ee ee ee ee Zz pv ete, Ro ut<br>aa aa aee ee eee s 0SB) | | nem illll<br>a ee i ee ee EY | | ot, ott. |<br>a ee a a eee<br>ee ee ee ee | LATIN TCT ATI EIT TT<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.01386372 0.0338046 0.1412901 0.302491 0.02700266 1.9E-3<br>τ i[s]: 3.0E-5 2.1E-4 2.1E-3 0.0110047 0.07241154 1.854229<br>10 Po} ff td 0.001 |<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>1 A YT TTT Tt Ti rT TT TT TT TT] 40<br>PT | TT Tj=25°C /<br>Tj=175°C<br>35<br>= PT TTT TTT TTT TTT Eh /<br>eg SR L<br>nN——— SE aT<br>8 CO | eelWy 4 D=0.5 /<br>30<br>0.2<br>2 VIELE 0.1<br>o 0.1 oo I _ /<br>7) EEE ee 0.05 > 25<br>Ww Ph ae ett Ww<br>rd enn AA ri CO oo /<br>4 pe Ae 0.02 EIII| w<br><x a) 2 | 5<br>0.01<br>= PTT eer TU 20<br>uwI CTSeVAsaniTT TI]sl single pulse Til) &x3<br>cEZz & 15<br>200) A<br>uw 0.01 Beat) 200 ° /<br>2 Ser iit) atest ea re oe |<br>2 0 Re Tl<br>keeal f ei a || 10<br>: a r ere ce n Ae<br>5<br>i: PLAT 1 2 VCMT 3 CLINT 4 ECT 5 6 TAT 9<br>ri[K/W]: 0.01386372 0.0338046 0.1412901 0.302491 0.02700266 1.9E-3<br>τ i[s]: 3.0E-5 2.1E-4 2.1E-3 0.0110047 0.07241154 1.854229<br>0.001 0<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>t p , PULSE WIDTH [s] V F , FORWARD VOLTAGE [V]<br>Figure 19. Diode transient thermal impedance as a Figure 20. Typical diode forward current as a function<br>function of pulse width of forward voltage<br>( D = t p/T)<br>C<br>c)th(j-<br>Z<br>I F<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> 11 Datasheet 2019-09-19 IHW20N120R5 **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5<br>IF=3A<br>IF=10A<br>IF=20A<br>3.0 IF=40A<br>2.5<br>Oo<br><x<br>Kk<br>2.0<br>><br>Q<br>m4<br>I<x ee<br>1.5<br>o<br>e)<br>LL<br>1.0<br>0.5<br>0.0<br>0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 21. 12 Datasheet 2019-09-19 IHW20N120R5 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Package Drawing PG-TO247-3** 13 V�2.2 2019-09-19 Datasheet IHW20N120R5 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 V�2.2 2019-09-19 Datasheet IHW20N120R5 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Revision�History** IHW20N120R5 ## **Revision:�2019-09-19,�Rev.�2.2** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |1.1|2014-04-17|Preliminarydata sheet| |2.1|2015-01-26|Final data sheet| |2.2|2019-09-19|additionalparameter in maximum ratings table: non repetitivepeak collector current| 15 V�2.2 2019-09-19 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →