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IHW15N120R3FKSA1
IGBT, 30 A, 1.7 V, 254 W, 1.2 kV, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:254W; Collector Emitter Voltage V; Available until stocks are exhausted Alternative available
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 254W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 30A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.41 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
IHW15N120R3 **==> picture [469 x 255] intentionally omitted <==** **----- Start of picture text -----**<br> Features: C<br>¢ Powerful monolithic body diode with low forward voltage<br>designed for soft commutation only<br>* TRENCHSTOP_ technology applications offers:<br>- very tight parameter distribution<br>G<br>- high ruggedness, temperature stable behavior<br>E<br>-low V CEsat<br>- easy parallel switching capability due to positive<br>temperature coefficient in V CEsat<br>« Low EMI<br>* Qualified according to JEDEC for target applications 2<br>¢ Pb-free lead plating; ROHS compliant a,<br>* Complete product spectrum and PSpice Models: rp tinegy<br>http://www.infineon.com/igbt/<br>Applications:<br>* Inductive cooking<br>¢ Inverterized microwave ovens<br>« Resonant converters G<br>¢ Soft switching applications C<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IHW15N120R3|1200V|15A|1.48V|175°C|H15R1203|PG-TO247-3| Datasheet www.infineon.com 2018-03-29 IHW15N120R3 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 2 V�2.5 2018-03-29 Datasheet IHW15N120R3 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emitter voltage|_V_CE||1200|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||30.0<br>15.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||45.0|A| |Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤175°C|-||45.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||30.0<br>15.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||45.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±25|V| |Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||254.0<br>127.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+175||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.59|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.59|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 3 V�2.5 2018-03-29 Datasheet IHW15N120R3 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.48<br>1.70<br>1.80|1.70<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.55<br>1.70<br>1.80|1.75<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|5.1|5.8|6.4|V| |Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|100<br>2500|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|13.9|-|S| |Integratedgate resistor|_r_G|||none||Ω| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1165|-|pF| |Output capacitance|_C_oes||-|40|-|| |Reverse transfer capacitance|_C_res||-|32|-|| |Gate charge|_Q_G|_V_CC=960V,_I_C=15.0A,<br>_V_GE=15V|-|165.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=600V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=14.6Ω,_R_G(off)=14.6Ω,<br>_L_σ=180nH,_C_σ=39pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|300|-|ns| |Fall time|_t_f||-|46|-|ns| |Turn-off energy|_E_off||-|0.70|-|mJ| V�2.5 2018-03-29 Datasheet 4 IHW15N120R3 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-off delaytime|_t_d(off)|_T_vj=175°C,<br>_V_CC=600V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=14.6Ω,_R_G(off)=14.6Ω,<br>_L_σ=180nH,_C_σ=39pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|370|-|ns| |Fall time|_t_f||-|90|-|ns| |Turn-off energy|_E_off||-|1.25|-|mJ| V�2.5 2018-03-29 Datasheet 5 IHW15N120R3 **==> picture [516 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 50 100<br>a<br>pt TT<br>40 \) | }HL| oon ht Te NT|<br>tp=1µs<br>: n EAL TIS eet ONE IMIE<br>SE aixsailll@n<br>10 20µs<br>TC=80°<br>a \ a JNT<br>ne 30 NS ne = 50µs TRS<br>o TC=110° NY o i<br>=) Se<br>5) | =)<br>200µs<br>oe ‘ \ 5) ENN SCAT<br>: oe = 1ms ETT<br>Ni 8 TIS ATT<br>20<br>10ms<br>| NC 1 CORCORAN<br>- oO po DC RN<br>ic - ahSSSES NN<br>eeeeNT<br>oO OTN\ ||| | = =— ee<br>10<br>CHIE VANiN\ A PT C TTTITnCTET A E NNTTT TT<br>0 0.1<br>1 10 100 1000 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T j 175°C; V GE=15V)<br>( T j ≤ 175°C, D =0.5, V CE =600V, V GE=15/0V,<br>R G=14,6 Ω )<br>300 40<br>250<br>30<br>200<br>- in<br>3 aN Z |<br>2 150 \ 20<br>a<br>a\<br>O 100 \ 5<br>10<br>LEEELLEN\EE<br>50<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br> > Figure 3. Power **temperature** ( _T_ j ≤ 175°C) Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C) 6 Datasheet 2018-03-29 IHW15N120R3 **==> picture [474 x 670] intentionally omitted <==** **----- Start of picture text -----**<br> 45 45<br>VGE=20V SS a VGE=20V | WW,<br>17V 17V<br>15V 15V<br>30 13V 30 13V<br>nm nm<br>11V 11V<br>oO 9V oO 9V<br>7V 7V<br>5V 5V<br>15 15<br>BENG (at EEN 7am<br>ee) NN eee) Ae<br>0 0<br>0 1 2 3 0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T j=25°C) ( T j=175°C)<br>45 3.0<br>Tvj=25°C IC=7.5A<br>a Tvj=175°C |I | [ IC=15A ee Fe<br>| S.= |ee ees IC=30A PoA<br>5 ee ee ee ee ee ea<br>E e e<br>2.5 a<br>< a i Pa ee eees<br>Eit 30 po ><2 eeee|) eeee|aee ee<br>=) WW ee ee ee ee ee ee<br>y | = 2.0 ee ee ee ee<br>O5 = aeee ee<br>2 a pewee| |<br>aO 15 O4 eeeeee eeeee<br>1.5<br>Pf | o) Peaee<br>/ ° nee A<br>/ PPeeaseeeee<br>0 ae- s 1.0 eeeeee<br>2 4 6 8 10 12 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>I C I C<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> ( _V_ GE=15V) Datasheet 7 2018-03-29 IHW15N120R3 **==> picture [471 x 331] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a 1000 a a<br>pT td(off) re ee ee ee | td(off) re<br>— ee ee<br>tf tf<br>Po a ee I (0 ee eeee ee<br>a a ee<br>i eeee ooeee a ae eee<br>ee<br>5 5<br>7p) 7p)<br>>><br>FF<br>oO 100 a a oO 100 a<br>Oo a ae ee a ee<br>i a a es ee po<br>= po = a ee ee<br>a Re eC<br>Peery) fee<br>10 10<br>0 5 10 15 20 25 30 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistance<br>(ind. load, T j =175°C, V CE =600V, V GE=0/15V,=0/15V, (ind. load, T j =175°C, V CE =600V, V GE=0/15V,<br>R =14,6 Ω ; R =14,6 Ω , test circuit in I C =15A, test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br> (ind. load, _T_ j =175°C, _V_ CE =600V, _V_ GE=0/15V,=0/15V, _R_ G(on)=14,6 Ω ; _R_ G(off)=14,6 Ω , test circuit in Fig. E) **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a 7<br>I td(off) typ.<br>tf min.<br>Jae po a<br>| a ee ee ee ee ee ~A max.<br>p o mS<br>Lref p Oee ee > 6 aoe AL<br>TE kN<br>5<br>th fe) N — ™ _e.<br>g 100 a a = a<br>=O aa aee eeeeee eeeeeee 4 INN<br>Ee a a ee ee ee ee = .<br>= Eaee ee eee ~<br>ee Ce eees NC<br>a eeee \<br>3<br>10 2<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. **==> picture [166 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (ind. load, V CE =600V, V GE =0/15V, I C=15A,<br>R G(on)=14,6 Ω ; R G(off)=14,6 Ω , test circuit in<br>Fig. E)<br>**----- End of picture text -----**<br> Figure 12. ( _I_ C=0.4mA) 8 Datasheet 2018-03-29 IHW15N120R3 **==> picture [490 x 331] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5 1.6<br>Eoff Eoff<br>1.5<br>2.0<br>on on<br>Ww Ww<br>7) 7) 1.4 Z|<br>oo<br>1.5<br>><br>1.3<br>Ww Ww<br>WwZz ayJ.4an Zz>Ww |<br>1.0<br>OO 1.2<br>EE<br>nn<br>=r J =r<br>0.5<br>1.1<br>0.0 1.0<br>0 5 10 15 20 25 30 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistance<br>(ind. load, T j =175°C, V CE =600V, V GE=0/15V,=0/15V, (ind. load, T j =175°C, V CE =600V, V GE=0/15V,<br>R =14,6 Ω ; R =14,6 Ω , test circuit in I C =15A, test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br> (ind. load, _T_ j =175°C, _V_ CE =600V, _V_ GE=0/15V,=0/15V, _R_ G(on)=14,6 Ω ; _R_ G(off)=14,6 Ω , test circuit in Fig. E) **==> picture [489 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1.3 2.0<br>Eoff Eoff<br>5 1.2 5 1.8 ye<br>1.1 1.6 a<br>—! —!<br>>>: 1.0 VA : 1.4 4<br>®2 7 : V4<br>WwoO 0.9 VA Ww2 1.2 LZ<br>Zz / ZzoO y<br>OO<br>EE vA<br>0.8 1.0<br>Y<br>0.7 0.8<br>0.6 0.6<br>25 50 75 100 125 150 175 400 500 600 700 800 900 1000<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br> Figure 15. **==> picture [164 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (ind load, V CE =600V, V GE =0/15V, I C=15A,<br>R G(on)=14,6 Ω ; R G(off)=14,6 Ω , test circuit in<br>Fig. E)<br>**----- End of picture text -----**<br> Figure 16. **==> picture [163 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (ind. load, T j =175°C, V GE =0/15V, I C=15A,<br>R G(on)=14,6 Ω ; R G(off)=14,6 Ω , test circuit in<br>Fig. E)<br>**----- End of picture text -----**<br> 9 Datasheet 2018-03-29 IHW15N120R3 **==> picture [474 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4 16<br>Tvj=25°C 240V<br>Tvj=175°C 960V<br>f= = |<br>1.2 ree || nettane/ 14 Ed | Vy7<br>12<br>op)- 1.0 | | tiTEVA AT= /:<br>oOBa 1Ti| Vv/ <ga 10 (<br>o | = /<br>ee 0.8 ee /<br>e ls 8 /<br>a | | aOE) |<br>i ee<br>0.6<br>oO / =<br>6<br>2 aVi Ww<br>BP 0.4 | ti LA<br>4<br>en ee<br>0.2 Poemee [Et] att Ann 2 |<br>0.0 HT LUE ET 0<br>100 1000 1E+4 0 25 50 75 100 125 150 175<br>dv/dt , VOLTAGE SLOPE [V/us] Q GE , GATE CHARGE [nC]<br>Figure 17. Typical turn off switching energy loss for Figure 18. Typical gate charge<br>soft switching ( I C=15A)<br>(indload, V CE =600V, V GE =15/0V, I C=15A,<br>R G=14,6 , test circuit in Fig. E)<br>1 TT Ee<br>|<br>| a ee PT | TT |<br>i LM<br>es PT ec<br>1000 es ee Ss UT UT E emZani IE<br>D=0.5<br>a Y<br>Cies 0.2<br>Coes 0.1<br>LL | ee Cres | | wu 0.1 ae’ — el Coo<br>0.05<br>B f Oe<br>Wu = Al a<br>oO 7 | 0.02 A|<br>22e i eoFOa Aetra ea Pail 0.01single pulse 1<br>100<br>a ay Il<br>a es 0010<br>a es ns ee 0.01 Crooo|<br>eeTS — (dp) || |<br>Po SLee MN2 / ReTolTI<br>aee iee=== es= w° ED)PACMCE|IT COMPT| ee | et oIti)il<br>PL ANIM EAM LUI ETI LAUT A<br>i: 1 2 3 4 5 6 7<br>ri[K/W]: 4.6E-3 0.1431 0.2097 0.2185 0.01204762 1.9E-3 2.1E-4<br>τ i[s]: 2.4E-5 3.3E-4 3.1E-3 0.01636424 0.1753518 1.713276 4.662402<br>10 0.001<br>0 10 20 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Typical capacitance as a function of Figure 20. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>GE<br>V<br>E<br>C<br>thJC<br>Z<br>**----- End of picture text -----**<br> 10 Datasheet 2018-03-29 IHW15N120R3 **==> picture [254 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1 | |<br>| | | |<br>EHHPET TTEHH EHHeerPt<br>_ ee<br>(a<br>re D=0.5<br>0.2<br>P 0.1<br>fa 0.1 econ 2A Ll<br>Lua QcSeer eee eh 0.05 HH li Ww<br>= | CT w<br>_ ee lll 0.02 | w5<br>0.01<br>Zz See) eal a 5<br>Sera ere single pulse ITH 8<br>: SN ll a<br>BL<br>0.01<br>a ECeeeEC tt} ee<br>2 STH HH i<br>s a) | | —- Hil<br>FE PTA TT ||<br>ee 0 0<br>i: 1 2 3 4 5 6 7<br>r PIM i[K/W]: 4.6E-3 0.1431 UTI 0.2097 CT 0.2185 VI) 0.012 1.9E-3 EPI 2.1E-4 LET<br>τ i[s]: 2.4E-5 3.3E-4 3.1E-3 0.01636424 0.1753518 1.713276 4.662402<br>0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>I F<br>thJC<br>Z<br>**----- End of picture text -----**<br> **==> picture [240 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 45 |<br>Ee] TTvjvj=25°C=175°C Fy// |<br>/<br>|<br>e<br>— 30<br>li /<br>Ww<br>w /<br>w5<br>8 aaa<br>a<br>15<br>ee LA/<br>/<br>PL<br>7<br>0<br>0 1 2 3<br>V F , FORWARD VOLTAGE [V]<br>I F<br>**----- End of picture text -----**<br> Figure 21. Figure 22. ( _D_ = _t_ p/T) **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>IF=7.5A<br>IF=15A<br>IF=30A<br>|<br>2.0<br>) oer<br>= [_]<br>><br>Q<br>& aa _—<br>= 4-7<br>~ _ _<br>(oe) _ _ _—<br>1.5<br>1.0<br>0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 23. 11 Datasheet 2018-03-29 IHW15N120R3 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Package Drawing PG-TO247-3** 12 V�2.5 2018-03-29 Datasheet IHW15N120R3 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 13 V�2.5 2018-03-29 Datasheet IHW15N120R3 **==> picture [86 x 38] intentionally omitted <==** ## Resonant�Switching�Series ## **Revision�History** IHW15N120R3 ## **Revision:�2018-03-29,�Rev.�2.5** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |1.1|2009-04-01|-| |2.1|2009-05-27|-| |2.2|2011-04-05|Pack. draw. rev. 05, markingupdate| |2.3|2013-02-12|Layout change| |2.4|2015-01-26|Minor changes| |2.5|2018-03-29|Fig.12 and Fig.17 minor change of legend| 14 V�2.5 2018-03-29 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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