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IHW15N120E1XKSA1
IGBT, 30 A, 1.5 V, 156 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:156W; Collector Emitter Volt; Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 156W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 150°C
- Continuous Collector Current: 30A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.17 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
# IHW15N120E1
IHW15N120E1
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Features: C<br>* Powerful monolithic body diode with low forward voltage<br>designed for soft commutation only<br>* TRENCHSTOP_ technology applications offers:<br>- very tight parameter distribution<br>G<br>- high ruggedness, temperature stable behavior<br>E<br>- low V CEsat<br>- easy parallel switching capability due to positive<br>temperature coefficient in V CEsat<br>« Low EMI<br>* Qualified according to JEDEC for target applications =<br>¢ Pb-free lead plating; ROHS compliant fale<br>* Complete product spectrum and PSpice Models: ro heap<br>http://www.infineon.com/igbt/<br>Applications:<br>* Inductive cooking<br>* Inverterized microwave ovens<br>* Resonant converters G<br>¢ Soft switching applications C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW15N120E1|1200V|15A|1.5V|150°C|H15ME1|PG-TO247-3|
2
IHW15N120E1
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## Resonant�Soft-Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
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IHW15N120E1
Resonant�Soft-Switching�Series
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||30.0<br>15.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||45.0|A|
|Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤150°C1)|-||45.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||30.0<br>15.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||45.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±25|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||156.0<br>62.2|W|
|Operating junction temperature|_T_vj|-40...+150||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.80|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.80|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) dV/dt < 1kV/µs
Rev.�2.1,��2016-07-29
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IHW15N120E1
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## Resonant�Soft-Switching�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=100°C<br>_T_vj=150°C|-<br>-<br>-|1.50<br>1.65<br>1.75|2.00<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A<br>_T_vj=25°C<br>_T_vj=100°C<br>_T_vj=150°C|-<br>-<br>-|1.90<br>2.15<br>2.35|2.50<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|4.0|5.8|8.0|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=150°C|-<br>-|-<br>300|100<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|14.0|-|S|
|Integratedgate resistor|_r_G|||6.8||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|810|-|pF|
|Output capacitance|_C_oes||-|24|-||
|Reverse transfer capacitance|_C_res||-|20|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=15.0A,<br>_V_GE=15V|-|90.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=65V,_I_C=15.0A,<br>_V_GE=0.0/18.0V,<br>_R_G(off)=10.2Ω<br>Energy losses include “tail”<br>according Figure B. (Test circuit<br>FigureE,_C_r=300nF).|-|130|-|ns|
|Fall time|_t_f||-|1000|-|ns|
|Turn-off energy, soft switching|_E_off|_dv/dt_=50.0V/µs|-|0.03|-|mJ|
Rev.�2.1,��2016-07-29
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IHW15N120E1
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## Resonant�Soft-Switching�Series
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=195V,_I_C=45.0A,<br>_V_GE=0.0/18.0V,<br>_R_G(off)=10.2Ω<br>Energy losses include “tail”<br>according Figure B. (Test circuit<br>FigureE,_C_r=300nF).|-|150|-|ns|
|---|---|---|---|---|---|---|
|Fall time|_t_f||-|790|-|ns|
|Turn-off energy, soft switching|_E_off|_dv/dt_=150.0V/µs|-|0.17|-|mJ|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=150°C,<br>_V_CC=65V,_I_C=15.0A,<br>_V_GE=0.0/18.0V,<br>_R_G(off)=10.2Ω<br>Energy losses include “tail”<br>according Figure B. (Test circuit<br>FigureE,_C_r=300nF).|-|140|-|ns|
|Fall time|_t_f||-|1800|-|ns|
|Turn-off energy, soft switching|_E_off|_dv/dt_=50.0V/µs|-|0.07|-|mJ|
||||||||
|Turn-off delaytime|_t_d(off)|_T_vj=150°C,<br>_V_CC=195V,_I_C=45.0A,<br>_V_GE=0.0/18.0V,<br>_R_G(off)=10.2Ω<br>Energy losses include “tail”<br>according Figure B. (Test circuit<br>FigureE,_C_r=300nF).|-|150|-|ns|
|Fall time|_t_f||-|1300|-|ns|
|Turn-off energy, soft switching|_E_off|_dv/dt_=150.0V/µs|-|0.36|-|mJ|
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IHW15N120E1
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160 40<br>140 NEE ttt 35 IN<br>120 30 [EN]<br>_ [PN]<br>100 25<br>e1 iN) |g Ne<br>Ne ew<br>80 20<br>60 15<br>PN eB EN<br>40 10<br>: aN a ee<br>20 Po KY] 5<br>Pf<br>0 | | I N 0 EL| |<br>25 50 75 100 125 150 25 50 75 100 125 150<br>T C T C<br>Figure 1. Figure 2.<br>temperature temperature<br>( T vj ≤ 150°C) ( V GE ≥ T vj ≤ 150°C)<br>45 45<br>VGE=20V VGE=20V<br>40 17V 40 17V<br>15V 15V<br>a PY<br>35 35<br>13V 13V<br>: 30 11V oon 30 11V SSL<br>9V 9V<br>ren eee Rae an<br>25 25<br>7V 7V<br>20 | 5V a See 20 5V NI |<br>(UI IN Cae<br>ew 15 >) Ae 15 NY pa<br>10 10<br>5 5<br>i) Nee eee) Ne<br>PF N<br>0 | 0 L LLAee<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE V CE<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. ( _T_ vj=25°C)
Figure 4. ( _T_ vj=150°C)
7
IHW15N120E1
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**----- Start of picture text -----**<br>
45 3.5<br>Tvj=25°C IC=7.5A<br>Tvj=150°C IC=15A<br>40 IC=30A<br>EJ yy 3.0 E | ) oof.<br>Zz<br>35<br>x al 2.5<br>re ao<br>30<br>a ow 2.0 at<br>a) 25 uw |<br>oc E _ | -<br>20<br>: : g 1.5 |}<br>gf ow<br>: 15 Lf a PF<br>O.4 1.0<br>_<br>10<br>/<br>a 0.5<br>5<br>a<br>0 0.0<br>| LT | pt} |<br>4 5 6 7 8 9 10 11 12 25 50 75 100 125 150<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=20V)
Figure 6. Typical a function ( _V_ GE=15V)
**==> picture [471 x 321] intentionally omitted <==**
**----- Start of picture text -----**<br>
1E+4 aa 1E+4<br>i 1 td(off) a ee ee ee i1 td(off) poa<br>tf tf<br>—— ——— _—— ————<br>|r Ra<br>po ~ | of a a<br>s 1000 a 1000<br>uwneeee en ee.) [_———<br>= a a | a a<br>F Eea ee = aa esee<br>O po rr<br>a ee A ee<br>= 100 ee ee ee = 100<br>~ [_— . [_<br>a es a es<br>aae es a eees<br>a a ee ee ee ee<br>10 10<br>0 10 20 30 40 50 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistance<br>(inductive load, T vj =150°C, V GE=0/18V, (inductive load, T vj =150°C, V GE=0/18V,<br>R G=10.2 , Dynamic test circuit in Figure E) I C =15A, Dynamic test circuit in Figure E)<br>t t<br>**----- End of picture text -----**<br>
8
IHW15N120E1
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**----- Start of picture text -----**<br>
1E+4 aa 7.0<br>t 1 ttd(off)f a a aee [— typ. |<br>a ee<br>ae 6.5<br>a ee ee ee ee,<br>e e<br>_ — I 6.0<br>_j--- TT oO<br>1000<br>nouw= poEeaa a Oon 5.5 \_ oN<br>© a 5.0 Pop NI<br>Oo a x<br>Ss 4.5 NN<br>a 100 [a]<br>~eea Ss i TT]T<br>a|<br>a Ee 4.0<br>as es es 5<br>3.5<br>es<br>10 3.0<br>25 50 75 100 125 150 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9.
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**----- Start of picture text -----**<br>
V GE =0/18V, I C=15A,<br>**----- End of picture text -----**<br>
Figure 10.
( _I_ C=0.5mA)
_R_ G=10.2
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**----- Start of picture text -----**<br>
0.40 0.10<br>Eoff, Tvj = 25°C Eoff<br>Eoff, Tvj = 100°C<br>0.35 Eoff, Tvj = 150°C<br>oy / 0.09<br>/ &<br>£& 0.30 / oy<br>tL / tL<br>D / D 0.08 —|<br>0.25<br>—! / —!<br>g fy | 8 _—-<br>ow@ / / ow@ —<br>0.20 0.07<br>2j2<br>o)i/ / i<br>ZrO 0.15 // f/| 7 \Y o)ZrO 0.06<br>EF 0.10 7 / WA =<br>f<br>0.05<br>0.05<br>0.00 0.04<br>0 10 20 30 40 50 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>E E<br>**----- End of picture text -----**<br>
Figure 11.
Figure 12.
(inductive load, _V_ GE =0/18V, _R_ G=10.2 Ω , Dynamic test circuit in Figure E)
_T_ vj =150°C, _V_ GE=0/18V,
_I_ C
9
IHW15N120E1
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**----- Start of picture text -----**<br>
0.40 16<br>Eoff, 15A — V CC = 240v<br>Eoff, 30A —- V CC =960V<br>0.35 Eoff, 45A 14 |<br>4<br>z a<br>ip) 0.30 ae m7 12<br>0.25 10<br>oat ~<br>0.20 8<br>Gi a = 7“ Ee<br>o) 2 L - — =<br>Zz 0.15 Le uw 6<br>fs) a Ke<br>: 0.10 _— é 4<br>0.05 2<br>0.00 0<br>25 50 75 100 125 150 0 20 40 60 80 100<br>T vj , JUNCTION TEMPERATURE [°C] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 13.
Figure 14. Typical ( _I_ C=15A)
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**----- Start of picture text -----**<br>
V GE =0/18V, I C=15A,<br>**----- End of picture text -----**<br>
_R_ G=10.2
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**----- Start of picture text -----**<br>
[= Cies _ |... 1.1... 1 Sere a ee ar et eet<br>Coes<br>| Cres Pf ff _ VTCAC TTT TeeeeeeSarnoTT<br>= ao<br>Pins<br>1000 mT | ff] ft egwe Aa 2 D=0.5 TIE TT [|] |<br>_6 —a+eeOo@ 0.1 nAPp||a 0.20.1<br>0.05<br>1 Tf ln Cn<br>0.02<br>a Cn= Le<br>< |reeeee en ee ee eez= -—T72ST| ll Le single pulse —<br>2 uw<br>100 hoff ee ea eI<br>|° JSSaiON =|—2 0.01 LeePA/' eeeee eee eee ee<br>|<br>po [NB] = VTTT<br>a ee ed ee ee 7<br>aeee cess ee ee a<br>oe Sar MOt t / NT ARETE |<br>10 Pt 0.001 e A e<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 15.
> Figure 16. IGBT / ( _D_ = _t_ p/T)
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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>
10
IHW15N120E1
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**----- Start of picture text -----**<br>
45 3.5<br>40 TTvjvj=25°C=150°C // IIIFFF=7.5A=15A=30A -<br>3.0<br>35<br>2.5<br>Z 30 0) 4-7<br>i xt eto<br>3 | : 2 2.0 | | | em<br>ef 2520 7/4) de (<br>1.5<br>je)LLpTLA_ 15 /LLye- 1.0 Pp<br>/<br>10<br>0.5<br>5<br>Ee<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 17.
Figure 18.
11
IHW15N120E1
Resonant�Soft-Switching�Series
**==> picture [146 x 65] intentionally omitted <==**
## **Package Drawing PG-TO247-3**
12
Rev.�2.1,��2016-07-29
IHW15N120E1
Resonant�Soft-Switching�Series
**==> picture [146 x 65] intentionally omitted <==**
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t) 90% V GE<br>t<br>I (t) �0% I C<br>2% I C<br>t<br>V CE (t)<br>t f t<br>t<br>d(off)<br>Figure A.<br>V GE (t) 90% V GE<br>t<br>I C (t)<br>1% I C<br>t<br> V CE (t) t 2<br>E off [=] V CE x I C x d t<br>t 1<br>t<br>t 1 t 2<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br> V CE<br> V GE<br> I CE<br>t<br>Figure C. Typical switching behavior<br>in resonant applications<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
R<br>CC<br>Figure E. Dynamic test circuit<br>Resonant capacitor, C r<br>Damping resistor, R<br>**----- End of picture text -----**<br>
Figure B.
13
Rev.�2.1,��2016-07-29
IHW15N120E1
## IHW15N120E1
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2016-07-21|Preliminarydata sheet|
|2.1|2016-07-29|Final data sheet|
## party.
## **Warnings**
14
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →