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IGW75N65H5XKSA1
IGBT, 120 A, 1.65 V, 395 W, 650 V, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pi
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 395W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 120A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.13 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
IGW75N65H5 **==> picture [468 x 296] intentionally omitted <==** **----- Start of picture text -----**<br> High speed 5 IGBT in TRENCHSTOP TM _ 5 technology<br>Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>* 650V breakdown voltage G<br>«Low Q G E<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/ ><br>Applications:<br>;<br>¢ Uninterruptible power supplies<br>* Solar converters y<br>* Welding converters i '<br>* Mid to high range switching frequency converters<br>Package pin definition:<br>1<br>2<br>3<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IGW75N65H5|650V|75A|1.65V|175°C|G75EH5|PG-TO247-3| Datasheet www.infineon.com 2017-07-27 IGW75N65H5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�series�fifth�generation ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 2 V�2.2 2017-07-27 Datasheet IGW75N65H5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�series�fifth�generation ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_C||120.0<br>75.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||300.0|A| |Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||300.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||395.0<br>198.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw, PG-TO247-pin123<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.38|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.75mA,_V_CE=_V_GE|3.2|4.0|4.8|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|0<br>800|75<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|104.0|-|S| 1) Defined by design. Not subject to production test. 3 V�2.2 2017-07-27 Datasheet IGW75N65H5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�series�fifth�generation ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3800|-|pF| |Output capacitance|_C_oes||-|80|-|| |Reverse transfer capacitance|_C_res||-|17|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=75.0A,<br>_V_GE=15V|-|160.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=30nH,_C_σ=25pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery. Diode<br>from IKW75N65EH5.|-|28|-|ns| |Rise time|_t_r||-|33|-|ns| |Turn-off delaytime|_t_d(off)||-|174|-|ns| |Fall time|_t_f||-|41|-|ns| |Turn-on energy|_E_on||-|2.25|-|mJ| |Turn-off energy|_E_off||-|0.95|-|mJ| |Total switchingenergy|_E_ts||-|3.20|-|mJ| |||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=37.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=30nH,_C_σ=25pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery. Diode<br>from IKW75N65EH5.|-|25|-|ns| |Rise time|_t_r||-|14|-|ns| |Turn-off delaytime|_t_d(off)||-|178|-|ns| |Fall time|_t_f||-|18|-|ns| |Turn-on energy|_E_on||-|0.90|-|mJ| |Turn-off energy|_E_off||-|0.30|-|mJ| |Total switchingenergy|_E_ts||-|1.20|-|mJ| V�2.2 2017-07-27 Datasheet 4 IGW75N65H5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�series�fifth�generation ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=150°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=30nH,_C_σ=25pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery. Diode<br>from IKW75N65EH5.|-|27|-|ns| |Rise time|_t_r||-|34|-|ns| |Turn-off delaytime|_t_d(off)||-|194|-|ns| |Fall time|_t_f||-|38|-|ns| |Turn-on energy|_E_on||-|3.00|-|mJ| |Turn-off energy|_E_off||-|1.00|-|mJ| |Total switchingenergy|_E_ts||-|4.00|-|mJ| |||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=37.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=30nH,_C_σ=25pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery. Diode<br>from IKW75N65EH5.|-|25|-|ns| |Rise time|_t_r||-|16|-|ns| |Turn-off delaytime|_t_d(off)||-|207|-|ns| |Fall time|_t_f||-|14|-|ns| |Turn-on energy|_E_on||-|1.80|-|mJ| |Turn-off energy|_E_off||-|0.40|-|mJ| |Total switchingenergy|_E_ts||-|2.20|-|mJ| V�2.2 2017-07-27 Datasheet 5 IGW75N65H5 **==> picture [474 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>|<br>ere<br>er K 350 A] ff<br>100<br>af 300 PN<br>nm O 250 \<br>e eet cite | | NL |<br>10<br>en<br>PCN<br>5O aSS 200150 Pf | AQ<br>: PL LT TTT EIN \<br>1<br>100<br>S MT | EP<br>e ee eeoeel 50 Pf | | tN\ |<br>not for linear use<br>0.1 [mi mmio 0 PPT Py XN<br>TT |<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C, V GE =15V, t p=1µs, temperature<br>I Cmax defined by design - not subject to ( T vj ≤ 175°C)<br>production test)<br>120 300<br>VGE = 20V<br>270 18V FSS<br>NOL) /<br>100 S eee 15V oe<br>240<br>12V<br>210<br>= ‘ ifaos 10V /annn<br>80 \ S Hl =<br>8V<br>180<br>7V<br>SRRNGE) Guess oc<br>60 150<br>: BLL 120 6V4V ANY?<br>40<br>EN TE NS<br>90<br>: v8 LL AYIA<br>60<br>pA} EEG IRE<br>20<br>30<br>PEE ALARPXE<br>0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br> 6 Datasheet 2017-07-27 IGW75N65H5 **==> picture [471 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 300 300<br>VGE = 19V Tvj = 25°C<br>270 17V ST / 270 | Tvj = 150°C<br>a | | tt a<br>15V<br>240 EES4 240<br>| YA<br>12V<br>ef) 210 ot y/74sse 210 LEE ie<br>10V<br>Zzx= = ttl x=Zz<br>: 7V t/a<br>180 180<br>z a PW z<br>7V<br>e | SAI ae fF)<br>© 150 SN =| 2 150<br>° 6V NIN ° }<br>120 5V 120<br>| ANB<br>O 90 L e F 90<br>ELS | 0 /<br>60 WX iN 60<br>BERD 2<a0 ne ee eee eee<br>30 BEDV ANNE EES 30 ee /eee<br>ANAA | | Nt| »Wi,<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3 4 5 6 7 8 9 10<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br> Figure 5. Typical ( _T_ vj=150°C) **==> picture [80 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 6. Typical<br>( V CE=20V)<br>**----- End of picture text -----**<br> **==> picture [474 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5 — 1000<br>IC = 37.5A a Ssa<br>IC = 75A a a seee ee ee<br>IC = 150A<br>_ = | aa<br>3.0<br>= a = pt TT es ee<br>6: P| ~AC - pittEERE| | tT |<br>= 2.5 ra : 100 =<br>s ue" “7 q— £i ia ee ee es ee es ee<br>o — = a ee a ee eee<br>tut - ee ee a ee ee ee<br>2.0<br>E — Q pf | ef | aa<br>fi ep to Looe<br>f<br>Bp5a 1.5 pt2 10 ————<br>5O. aa ea eeeee ee ee<br>1.0<br>td(off)<br>tf<br>td(on)<br>tr<br>aaa = fp=<br>0.5 1<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200 225<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br> Figure 7. Typical a function ( _V_ GE=15V) (inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=8 Ω , _R_ G(off)=8 Ω , test circuit in Figure E) Datasheet 7 2017-07-27 IGW75N65H5 **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>td(off) aa esaee<br>tf<br>1000 E td(on) ] a<br>H tr pf} |__| __| Tf a<br>H a ee a ee po<br>es a ee ee eeee<br>po ——<br>100<br>= Poy eeee<br>Lu im a a<br>ee= = ————a ee<br>F + - ns<br>© _ OQ peosevoeneapecnenserrors perreerrenef sete cnenfape<br>oO 100 po eT oO<br>E a a a<br>ee e e eee<br>a a a as ee e 10<br>- Poets | TT 7 aa<br>a<br>a; -<br>td(off)<br>tf<br>td(on)<br>tr<br>10 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br> **==> picture [475 x 349] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistance junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,<br>V GE =0/15V, I C =75A, dynamic test circuit in I C =75A, R G(on)=8 Ω ; R G(off)=8 Ω , dynamic test<br>Figure E) circuit in Figure E)<br>6.0 20<br>typ. Eoff<br>5.5 min. 18 Eon<br>max. Ets<br>=. = = /<br>WW /<br>5.0 16<br>x4 = -<br>aO Sse £ //<br>= 4.5 Toye ~~ oOa) 14 / /<br>; 4.0 : S 12<br>5 ~SL > ‘ .<br>we 3.5 |——~ a “Ss 25o 10 / / Zzy,<br>ee ee ee<br>fFa 3.0 —™= e2 8 Va<br>E ~SAL ™ = /\ 47<br>th 2.5 ~~ | 8 6 ‘ols<br>A S _~ = V f<br>O). 2.0 ee~ N a; 4 4 LZ<br>Ane<br>1.5 2<br>ee 2 a [ Z|<br>1.0 0<br>25 50 75 100 125 150 0 25 50 75 100 125 150 175 200 225<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. Gate-emitter of junction ( _I_ C=0.75mA) Figure 12. (inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=8 Ω , _R_ G(off)=8 Ω , test circuit in Figure E) 8 Datasheet 2017-07-27 IGW75N65H5 **==> picture [474 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 15 5.0<br>14 Eoff Eoff<br>Eon 4.5 Eon<br>Ets Ets<br>13 a<br>oe 12 | en 4.0 EE<br>A 11 ee ee a<br>3.5<br>ee ee 10<br>By 9 3.0 ao<br>ee 8 eke<br>ee ee<br>2.5<br>7<br>ae 6 ee 2.0<br>5<br>| 4g Pe<br>1.5<br>4<br>FE L4UT _<br>3 1.0<br>i ae<br>2<br>Teeter Py<br>0.5<br>1<br>Pett | tt | re<br>0 Pot | | 0.0<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses asa Figure 14. Typical switching energy losses as a<br>function of gate resistance function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,<br>V GE =0/15V, I C =75A, dynamictest circuit in I C =75A, R G(on)=8 Ω ; R G(off)=8 Ω , dynamic test<br>Figure E) circuit in Figure E)<br>5.5 Ld 16 es<br>Eoff VCE = 130V<br>5.0 Eon VCE = 520V<br>E Ets RT! a 14 Ea a VA<br>4.5<br>“<br>ry oe TT T TA<br>12<br>21] 4.0 | ||be |).<br>Pere C 3.5 ; 10 PA<br>,<br>3.0<br>ra Pee es a<br>8<br>nD “ 7 th /<br>2.5<br>S Zane ae: |<br>2 2.0 Le P 6 LY TT<br>tle lb | || & Lee<br>errs= 1.5 ~ PP|| Py<br>4<br>1.0<br>» FEE 2 UC<br>0.5<br>Pee PEE<br>0.0 0<br>200 250 300 350 400 450 500 0 20 40 60 80 100 120 140 160 180<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q G , GATE CHARGE [nC]<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br> Figure 15. Figure 16. Typical ( _I_ C=75A) (inductive load, _T_ vj =150°C, _V_ GE=0/15V, _I_ C =75A, _R_ G(on)=8 Ω ; _R_ G(off)=8 Ω , dynamic circuit in Figure E) 9 Datasheet 2017-07-27 IGW75N65H5 **==> picture [472 x 319] intentionally omitted <==** **----- Start of picture text -----**<br> 1E+4 CCiesoes A AR A<br>Cres<br>== RE<br>fo Se LUI ILIl<br>f p] Te |<br>a SeOe SSe Ss 0.1 UMMAEe D = 0.50.2 ll<br>ee ee rc) ll “a TT<br>c 7a 7SS a 0.1 mniil|<br>0.05<br>to} 1000<br>S | | =|e iee) a an 0.02<br>os a FO LArava| Ly TT<br>Z | 0.01<br>E SaA0 S$ PheI yt single pulse |<br>o we Bee i<br>py a oi<br>~¢ 1 N,<br>eS |<br>0.01<br>O \ ‘~ ~ 5 AM<br>° 100 \ ss,~~ uw77} eeY|Aee ||<br>a ce Sci til sat Rg<br>Js —_|-_|_____ . AH/| bp 4 Cr=1;/Ry| Co=te/Ro |<br>aa YAN i: 1 2 3 4 5 6<br>ri[K/W]: 0.010336 0.078242 0.081139 0.196217 0.015938 1.8E-3<br>τ i[s]: 2.8E-5 2.3E-4 2.3E-3 0.013145 0.113481 1.869237<br>10 0.001<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> 10 Datasheet 2017-07-27 IGW75N65H5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�series�fifth�generation ## **Package Drawing PG-TO247-3** 11 V�2.2 2017-07-27 Datasheet IGW75N65H5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�series�fifth�generation ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 12 V�2.2 2017-07-27 Datasheet IGW75N65H5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�series�fifth�generation ## **Revision�History** IGW75N65H5 ## **Revision:�2017-07-27,�Rev.�2.2** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |2.1|2015-05-20|Final data sheet| |2.2|2017-07-27|Correction Fig. 1| 13 V�2.2 2017-07-27 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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