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IGW75N60TFKSA1
IGBT, 75 A, 2 V, 428 W, 600 V, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:428W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operati
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 428W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 75A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.9 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
## IGW75N60T TRENCHSTOP™ Series ## Low Loss IGBT: IGBT in TRENCHSTOP™ and Fieldstop technology S/ (, (%, G&S Green ## **Features:** - Very low _V_ CE(sat) 1.5V (typ.) - Maximum Junction Temperature 175°C - Short circuit withstand time 5s - Designed for : - Frequency Converters - Uninterrupted Power Supply - TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed **==> picture [61 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>PG-TO247-3<br>**----- End of picture text -----**<br> - Positive temperature coefficient in _V_ CE(sat) - Low EMI - Low Gate Charge - Qualified according to JEDEC[1] for target applications - Pb-free lead plating; RoHS compliant - Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ |**Type**|**_V_CE**|**_I_C**|**_V_CE(sat****_),Tj=25°C_**|**_T_j,max**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IGW75N60T|600V|75A|1.5V|175C|G75T60|PG-TO247-3| |**Maximum Ratings**|||| |---|---|---|---| |**Parameter**|**Symbol**<br>~~a~~|**Value**<br>~~a~~|**Unit**<br>~~a~~| |Collector-emitter voltage,_T_j≥ 25C|_V_C E<br>~~a~~<br>~~se~~|600<br>~~a~~<br>~~se~~|V<br>~~a~~<br>~~se~~| |DC collector current, limited by_T_jmax<br>_T_C= 25C<br>_T_C= 100C|_I_C<br>~~se~~<br>~~pf~~|118<br>85<br>~~se~~<br>~~pf~~|A<br>~~se~~<br>~~es~~| |Pulsed collector current,_t_plimited by _T_jmax|_I_Cpul s<br>~~pf~~|225<br>~~pf~~|| |Turn off safe operatingarea_V_CE= 600V,_T_j= 175C,_t_p= 1µs|_-_<br>~~es~~|225<br>~~es~~|| |Gate-emitter voltage|_V_G E<br>~~es~~|20<br>~~es~~|V<br>~~es~~| |Short circuit withstand time2) <br>_V_GE= 15V,_V_CC400V,_T_j 150C|_t_SC<br>~~a~~|5<br>~~a~~|s<br>~~a~~| |Power dissipation_T_C= 25C|_P_t ot<br>~~es~~|428<br>~~es~~|W<br>~~es~~| |Operating junction temperature|_T_ j <br>~~es~~|-40...+175<br>~~es~~|C<br>~~es~~<br>~~es~~| |Storage temperature|_T_st g<br>~~es~~|-55...+150<br>~~es~~|| |Solderingtemperature, 1.6mm(0.063 in.)from case for 10s|-<br>~~a~~|260|| > 1 J-STD-020 and JESD-022 > 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Rev. 2.7 10.01.2018 IFAG IPC TD VLS **==> picture [136 x 61] intentionally omitted <==** ## TRENCHSTOP™ Series ## IGW75N60T ## **Thermal Resistance** |**Thermal Resistance**||||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**| |**Characteristic**||||| |IGBT thermal resistance,<br>junction – case|_R_t hJC||0.35|K/W| |Thermal resistance,<br>junction – ambient|_R_t hJA||40|| ## **Electrical Characteristic,** at _T_ j = 25 C, unless otherwise specified |**Electrical Characteristic,**at_T_j= 25|C, unless ot|herwise specified||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| ||||**min.**|**Typ. **|**max.**|| |**Static Characteristic**||||||| |Collector-emitter breakdown voltage|_V_( BR )C ES|_V_G E=0V,_I_C=0.2mA|600|-|-|V| |Collector-emitter saturation voltage|_V_C E( sat )|_V_G E= 15V,_I_C=75A<br>_T_j=25C<br>_T_j=175C|-<br>-|1.5<br>1.9|2.0<br>-|| |Gate-emitter threshold voltage|_V_G E( t h)|_I_C=1.2mA,_V_C E=_V_G E|4.1|4.9|5.7|| |Zero gate voltage collector current|_I_CE S|_V_C E=600V,<br>_V_G E=0V<br>_T_j=25C<br>_T_j=175C|-<br>-|-<br>-|40<br>5000|µA| |Gate-emitter leakage current|_I_GE S|_V_C E=0V,_V_G E=20V|-|-|100|nA| |Transconductance|_g_fs|_V_C E=20V,_I_C=75A|-|41|-|S| |Integratedgate resistor|_RG int_|||-||Ω| |**Dynamic Characteristic**||||||| |Input capacitance|_C_i ss|_V_C E=25V,<br>_V_G E=0V,<br>_f_=1MHz|-|4620|-|pF| |Output capacitance|_C_os s||-|288|-|| |Reverse transfer capacitance|_C_rs s||-|137|-|| |Gate charge|_Q_Gat e|_V_C C=480V,_I_C=75A<br>_V_G E=15V|-|470|-|nC| |Internal emitter inductance<br>measured 5mm(0.197 in.)from case|_L_E||-|13|-|nH| |Short circuit collector current1)|_I_C( SC )|_V_G E=15V,_t_SC5s<br>_V_C C= 400V,<br>_T_j 150C|-|687.5|-|A| > 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Rev. 2.7 10.01.2018 2 IFAG IPC TD VLS **==> picture [136 x 61] intentionally omitted <==** ## TRENCHSTOP™ Series ## IGW75N60T ## **Switching Characteristic, Inductive Load,** at _T_ j=25 C |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**Typ. **|**max.**|| |**IGBT Characteristic**||||||| |Turn-on delaytime|_t_d( o n)|_T_j=25C,<br>_V_C C=400V,_I_C=75A,<br>_V_G E=0/15V,<br>_r_G=5,_L_=100nH,<br>_C_=39pF<br>_L_,_C_from Fig. E<br>Energy losses include<br>“tail” and diode reverse<br>recovery.<br>Diode from IKW75N60T|-|33|-|ns| |Rise time|_t_r||-|36|-|| |Turn-off delaytime|_t_d( of f)||-|330|-|| |Fall time|_t_f||-|35|-|| |Turn-on energy1)|_E_o n||-|2.0|-|mJ| |Turn-off energy|_E_o ff||-|2.5|-|| |Total switching energy|_E_t s||-|4.5|-|| ## **Switching Characteristic, Inductive Load,** at _T_ j=175 C |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**Typ.**|**max.**|| |**IGBT Characteristic**||||||| |Turn-on delaytime|_t_d( o n)|_T_j=175C,<br>_V_C C=400V,_I_C=75A,<br>_V_G E=0/15V,<br>_r_G=5,_L_=100nH,<br>_C_=39pF<br>_L_,_C_from Fig. E<br>Energy losses include<br>“tail” and diode reverse<br>recovery.<br>Diode from IKW75N60T|-|32|-|ns| |Rise time|_t_r||-|37|-|| |Turn-off delaytime|_t_d( of f)||-|363|-|| |Fall time|_t_f||-|38|-|| |Turn-on energy1)|_E_o n||-|2.9|-|mJ| |Turn-off energy|_E_o ff||-|2.9|-|| |Total switching energy|_E_t s||-|5.8|-|| Rev. 2.7 10.01.2018 3 IFAG IPC TD VLS **==> picture [136 x 61] intentionally omitted <==** ## TRENCHSTOP™ Series ## IGW75N60T **==> picture [234 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> 200A<br>150A<br>T C=80°C<br>100A<br>T C =110°C<br>Ic<br>50A<br>Ic<br>0A<br>10Hz 100Hz 1kHz 10kHz 100kHz<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **==> picture [219 x 208] intentionally omitted <==** **----- Start of picture text -----**<br> t p =1µs<br>100A<br>10µs<br>50µs<br>10A<br>1ms<br>10ms<br>DC<br>1A<br>1V 10V 100V 1000V<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **==> picture [108 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> f , SWITCHING FREQUENCY<br>**----- End of picture text -----**<br> **Figure 1. Collector current as a function of** **switching frequency** ( _T_ j 175C, _D =_ 0.5, _V_ CE = 400V, _V_ GE = 0/15V, _r_ G = 5) _V_ CE, COLLECTOR-EMITTER VOLTAGE **Figure 2. Safe operating area** ( _D =_ 0, _T_ C = 25C, _T_ j 175C; _V_ GE=0/15V) **==> picture [232 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 400W<br>350W<br>300W<br>250W<br>200W<br>150W<br>100W<br>50W<br>0W<br>25°C 50°C 75°C 100°C 125°C 150°C<br>POWER DISSIPATION<br>tot,<br>P<br>**----- End of picture text -----**<br> **==> picture [223 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> 120A<br>90A<br>60A<br>30A<br>0A<br>25°C 75°C 125°C<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **==> picture [102 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> T C, CASE TEMPERATURE<br>**----- End of picture text -----**<br> **Figure 3. Power dissipation as a function of case temperature** ( _T_ j 175C) **==> picture [102 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> T C, CASE TEMPERATURE<br>**----- End of picture text -----**<br> **Figure 4. DC Collector current as a function of case temperature** ( _V_ GE 15V, _T_ j 175C) Rev. 2.7 10.01.2018 4 IFAG IPC TD VLS **==> picture [136 x 61] intentionally omitted <==** ## TRENCHSTOP™ Series ## IGW75N60T **==> picture [479 x 582] intentionally omitted <==** **----- Start of picture text -----**<br> 120A<br>120A<br>V GE=20V V GE=20V<br>15V<br>15V<br>90A<br>13V 90A<br>13V<br>11V 11V<br>9V 9V<br>60A 60A<br>7V 7V<br>30A 30A<br>0A 0A<br>0V 1V 2V 3V 0V 1V 2V 3V<br>V CE, COLLECTOR-EMITTER VOLTAGE V CE, COLLECTOR-EMITTER VOLTAGE<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T j = 25°C) ( T j = 175°C)<br>2.5V I C =150A<br>80A<br>2.0V<br>60A<br>1.5V IC =75A<br>40A<br>1.0V I C =37.5A<br>T J=175°C<br>20A<br>25°C 0.5V<br>0A 0.0V<br>0V 2V 4V 6V 8V 0°C 50°C 100°C 150°C<br>V GE, GATE-EMITTER VOLTAGE T J, JUNCTION TEMPERATURE<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>, ,<br>I C I C<br>EMITT SATURATION VOLTAGE<br>-<br>COLLECTOR CURRENT<br>,<br>I C<br>COLLECTOR<br>CE(sat),<br>V<br>**----- End of picture text -----**<br> **==> picture [196 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 7. Typical transfer characteristic<br>(VCE=20V)<br>**----- End of picture text -----**<br> **Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature** ( _V_ GE = 15V) Rev. 2.7 10.01.2018 IFAG IPC TD VLS 5 **==> picture [136 x 61] intentionally omitted <==** ## TRENCHSTOP™ Series ## IGW75N60T **==> picture [229 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>d(off)<br>100ns<br>t f<br>t<br>d(on)<br>t r<br>10ns<br>0A 40A 80A 120A<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> **==> picture [105 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> IC , COLLECTOR CURRENT<br>**----- End of picture text -----**<br> **Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE = 400V, VGE = 0/15V, _r_ G = 5Ω, Dynamic test circuit in Figure E) **==> picture [230 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>d(off)<br>100ns<br>t f t r<br>t<br>d(on)<br>10ns<br> <br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> ## _R_ G, GATE RESISTOR ## **Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ J = 175°C, - _V_ CE= 400V, VGE = 0/15V, _I_ C = 75A, Dynamic test circuit in Figure E) **==> picture [229 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>d(off)<br>100ns<br>t f<br>t r<br>t<br>d(on)<br>25°C 50°C 75°C 100°C 125°C 150°C<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> **==> picture [119 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br> **Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE = 400V, VGE = 0/15V, _I_ C = 75A, _r_ G=5Ω, Dynamic test circuit in Figure E) **==> picture [230 x 220] intentionally omitted <==** **----- Start of picture text -----**<br> 7V<br>6V<br>max.<br>typ.<br>5V<br>4V min.<br>3V<br>2V<br>1V<br>0V<br>-50°C 0°C 50°C 100°C 150°C<br>EMITT TRSHOLD VOLTAGE<br>-<br>GATE<br>GE(th ) ,<br>V<br>**----- End of picture text -----**<br> **==> picture [119 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br> **Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 1.2mA) Rev. 2.7 10.01.2018 6 IFAG IPC TD VLS **==> picture [136 x 61] intentionally omitted <==** ## TRENCHSTOP™ Series ## IGW75N60T **==> picture [237 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> *) due to diode recover E on and E ts include losses y E ts*<br>12.0mJ<br>E on*<br>8.0mJ<br>E off<br>4.0mJ<br>0.0mJ<br>0A 20A 40A 60A 80A 100A 120A 140A<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> **==> picture [105 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> IC , COLLECTOR CURRENT<br>**----- End of picture text -----**<br> **Figure 13. Typical switching energy losses as a function of collector current** (inductive load, _T_ J = 175°C, _V_ CE = 400V, VGE = 0/15V, _r_ G = 5Ω, Dynamic test circuit in Figure E) **==> picture [231 x 216] intentionally omitted <==** **----- Start of picture text -----**<br> *) E on and E ts include losses<br> due to diode recovery<br>8.0mJ E ts *<br>6.0mJ<br>4.0mJ<br>E on*<br>2.0mJ<br>E off<br>0.0mJ<br> <br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> **==> picture [84 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> R G, GATE RESISTOR<br>**----- End of picture text -----**<br> ## **Figure 14. Typical switching energy losses as a function of gate resistor** (inductive load, _T_ J = 175°C, - _V_ CE = 400V, VGE = 0/15V, _I_ C = 75A, Dynamic test circuit in Figure E) **==> picture [235 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> *) E on and E ts include losses<br>5.0mJ due to diode recovery E ts*<br>4.0mJ<br>3.0mJ E off<br>2.0mJ<br>E on*<br>1.0mJ<br>0.0mJ<br>25°C 50°C 75°C 100°C 125°C 150°C<br>T J, JUNCTION TEMPERATURE<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> ## **Figure 15. Typical switching energy losses as a function of junction temperature** - (inductive load, _V_ CE = 400V, VGE = 0/15V, _I_ C = 75A, _r_ G = 5Ω, Dynamic test circuit in Figure E) **==> picture [229 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> *) E on and E ts include losses<br> due to diode recovery<br>8mJ<br>6mJ E on *<br>E ts*<br>4mJ<br>E off<br>2mJ<br>0mJ<br>300V 350V 400V 450V 500V 550V<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> **==> picture [150 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> VCE , COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br> ## **Figure 16. Typical switching energy losses as a function of collector emitter voltage** - (inductive load, _T_ J = 175°C, _V_ GE = 0/15V, _I_ C = 75A, _r_ G = 5Ω, Dynamic test circuit in Figure E) Rev. 2.7 10.01.2018 IFAG IPC TD VLS 7 **==> picture [136 x 61] intentionally omitted <==** ## TRENCHSTOP™ Series ## IGW75N60T **==> picture [234 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>120V<br>10V 480V<br>5V<br>0V<br>0nC 100nC 200nC 300nC 400nC<br>EMITTER VOLTAGE<br>-<br>GATE<br>,<br>GE<br>V<br>**----- End of picture text -----**<br> _Q_ GE, GATE CHARGE **Figure 17. Typical gate charge** ( _I_ C=75 A) **==> picture [231 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> C iss<br>1nF<br>C oss<br>100pF C rss<br>0V 10V 20V<br>CAPACITANCE<br>c,<br>**----- End of picture text -----**<br> **==> picture [150 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br> **Figure 18. Typical capacitance as a function of collector-emitter voltage** ( _V_ GE=0V, _f_ = 1 MHz) **==> picture [466 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> 12µs<br>1000A 10µs<br>8µs<br>750A<br>6µs<br>500A<br>4µs<br>250A 2µs<br>0µs<br>0A 10V 11V 12V 13V 14V<br>12V 14V 16V 18V<br>COLLECTOR CURRENT<br>SHORT CIRCUIT WITHSTAND TIME<br>, short circuit ,<br>t SC<br>I C(sc)<br>**----- End of picture text -----**<br> _V_ GE, GATE-EMITTETR VOLTAGE **Figure 19. Typical short circuit collector current as a function of gateemitter voltage** - ( _V_ CE 400V, _T_ j 150C) _V_ GE, GATE-EMITETR VOLTAGE **Figure 20. Short circuit withstand time as a** **function of gate-emitter voltage** ( _V_ CE=400V _,_ start at _T_ J _=_ 25°C, _T_ Jmax<150°C) Rev. 2.7 10.01.2018 8 IFAG IPC TD VLS **==> picture [136 x 61] intentionally omitted <==** ## TRENCHSTOP™ Series ## IGW75N60T **==> picture [238 x 241] intentionally omitted <==** **----- Start of picture text -----**<br> D =0.5<br>10 -1K/W<br>0.2<br>0.1<br>0.05 R , ( K / W ) , ( s )<br>0.1968 0.115504<br>0.0733 0.009340<br>10 -2K/W 0.02 0 0 . . 0509 0290 0 0 . . 0008 00011 23 9<br>0.01 R 1 R 2<br>C 1=1/ R 1 C 2=2/ R 2<br>single pulse<br>10 -3K/W<br>1µs 10µs 100µs 1ms 10ms 100ms<br>t P, PULSE WIDTH<br>TRANSIENT THERMAL IMPEDANCE<br>,<br>thJC<br>Z<br>**----- End of picture text -----**<br> **Figure 21. IGBT transient thermal impedance** ( _D = t_ p / _T_ ) Rev. 2.7 10.01.2018 9 IFAG IPC TD VLS ## IGW75N60T ## TRENCHSTOP™ Series Rev. 2.7 10.01.2018 10 IFAG IPC TD VLS ## Cinfineon **Figure A. Definition of switching times** ## IGW75N60T ## TRENCHSTOP™ Series **==> picture [189 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> i,v<br>di F /dt t r r =t S + t F<br>“a Q r r =Q S + Q F<br>t<br>a r r<br>I F t S t F<br>I Q S Q F 10% I r r m t<br>r r m 90% I di r r /dt V R<br>r r m<br>Figure C. Definition of diodes<br>switching characteristics<br>1 2 n<br>r1 r 2 r n<br>T (t)j<br>p(t) r1 r 2 r n<br>T C<br>**----- End of picture text -----**<br> **Figure D. Thermal equivalent circuit** **Figure B. Definition of switching losses** Rev. 2.7 10.01.2018 11 IFAG IPC TD VLS IGW75N60T TRENCHSTOP™ Series **==> picture [136 x 61] intentionally omitted <==** **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2018. All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. Rev. 2.7 10.01.2018 12 IFAG IPC TD VLS
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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