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IGW75N60H3FKSA1
IGBT, 140 A, 1.85 V, 428 W, 600 V, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP IGBT3
- Power Dissipation: 428W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 140A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.24 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## IGBT High speed IGBT in Trench and Fieldstop technology ## IGW75N60H3 600V high speed switching series third generation Data sheet IGW75N60H3 High speed switching series third generation ## High speed IGBT in Trench and Fieldstop technology **==> picture [469 x 264] intentionally omitted <==** **----- Start of picture text -----**<br> Features: C<br>TRENCHSTOP [TM] technology offering<br>• very low VCEsatCEsat<br>• low EMI<br>• maximum junction temperature 175°C<br>G<br>• qualified according to JEDEC for target applications<br>E<br>• Pb-free lead plating, halogen-free mould compound, RoHS<br>compliant<br>• complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications:<br>• uninterruptible power supplies<br>• welding converters<br>• converters with high switching frequency<br>Package pin definition:<br>• Pin 1 - gate 1<br>• Pin 2 & backside - collector 2<br>3<br>**----- End of picture text -----**<br> - very low VCEsatCEsat - Pin 1 - gate • Pin 2 & backside - collector • Pin 3 - emitter Key Performance and Package Parameters **Type V†Š I† V†ŠÙÈÚ, TÝÎ=25°C TÝÎÑÈà Marking Package** IGW75N60H3 600V 75A 1.85V 175°C G75H603 PG-TO247-3 ~~ee~~ Rev. 1.2, 2011-12-13 2 IGW75N60H3 **==> picture [147 x 65] intentionally omitted <==** High speed switching series third generation ## Table of Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Rev. 1.2, 2011-12-13 3 IGW75N60H3 **==> picture [147 x 65] intentionally omitted <==** High speed switching series third generation ## Maximum ratings |Maximum ratings||||| |---|---|---|---|---| |Parameter|Symbol|Value||Unit| |Collector-emitter voltage|V†Š|600||V| |DC collector current, limited by TÝÎÑÈà<br>T† = 25°C<br>T† = 100°C|I†|140.0<br>75.0||A| |Pulsed collector current, tÔ limited by TÝÎÑÈà|I†ÔÛÐÙ|225.0||A| |Turn off safe operating area V†Š ù 600V, TÝÎ ù 175°C|-|225.0||A| |Gate-emitter voltage|V•Š|±20||V| |Short circuit withstand time<br>V•Š = 15.0V, V†† ù 400V<br>Allowed number of short circuits < 1000<br>Time between short circuits: ú 1.0s<br>TÝÎ = 150°C|t»†|5||µs| |Power dissipation T† = 25°C|PÚÓÚ|428.0||W| |Operating junction temperature|TÝÎ|-40...+175||°C| |Storage temperature|TÙÚÃ|-55...+150||°C| |Soldering temperature,<br>wave soldering 1.6 mm (0.063 in.) from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|M||0.6|Nm| ## Thermal Resistance |Thermal Resistance|||||| |---|---|---|---|---|---| |Parameter|Symbol|Conditions|Max. Value||Unit| |Characteristic|||||| |IGBT thermal resistance,<br>junction - case|RÚÌñÎ-Êò|||0.35|K/W| |Thermal resistance<br>junction - ambient|RÚÌñÎ-Èò|||40|K/W| ## **Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified** |Parameter|Symbol|Conditions||Value||Unit| |---|---|---|---|---|---|---| ||||min.|typ.|max.|| |Static Characteristic||||||| |Collector-emitter breakdown voltage|Vñ…çò†Š»|V•Š = 0V, I† = 2.00mA|600|-|-|V| |Collector-emitter saturation voltage|V†ŠÙÈÚ|V•Š = 15.0V, I† = 75.0A<br>TÝÎ = 25°C<br>TÝÎ = 125°C<br>TÝÎ = 175°C|-<br>-<br>-|1.85<br>2.10<br>2.25|2.30<br>-<br>-|V| |Gate-emitter threshold voltage|V•ŠñÚÌò|I† = 1.20mA, V†Š = V•Š|4.1|5.1|5.7|V| |Zero gate voltage collector current|I†Š»|V†Š = 600V, V•Š = 0V<br>TÝÎ = 25°C<br>TÝÎ = 175°C|-<br>-|-<br>-|40.0<br>5000.0|µA| |Gate-emitter leakage current|I•Š»|V†Š = 0V, V•Š = 20V|-|-|100|nA| |Transconductance|gËÙ|V†Š = 20V, I† = 75.0A|-|41.0|-|S| Rev. 1.2, 2011-12-13 4 IGW75N60H3 **==> picture [147 x 65] intentionally omitted <==** ## High speed switching series third generation ## **Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified** |Parameter|Symbol|Conditions||Value||Unit| |---|---|---|---|---|---|---| ||||min.|typ.|max.|| |Dynamic Characteristic||||||| |Input capacitance|CÍþÙ|V†Š = 25V, V•Š = 0V, f = 1MHz|-|4620|-|pF| |Output capacitance|CÓþÙ||-|240|-|| |Reverse transfer capacitance|CØþÙ||-|138|-|| |Gate charge|Q•|V†† = 480V, I† = 75.0A,<br>V•Š = 15V|-|470.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from case|LŠ||-|13.0|-|nH| |Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits: ú 1.0s|I†ñ»†ò|V•Š = 15.0V, V†† ù 400V,<br>t»† ù 5µs<br>TÝÎ = 150°C|-|685|-|A| ## **Switching Characteristic, Inductive Load, at TÝÎ = 25°C** |Parameter|Symbol|Conditions||Value||Unit| |---|---|---|---|---|---|---| ||||min.|typ.|max.|| |IGBT Characteristic||||||| |Turn-on delay time|tÁñÓÒò|TÝÎ = 25°C,<br>V†† = 400V, I† = 75.0A,<br>V•Š = 0.0/15.0V,<br>r• = 5.2Â, Lÿ = 90nH,<br>Cÿ = 50pF<br>Lÿ, Cÿ from Fig. E<br>Energy losses include “tail” and<br>diode (IKW75N60H3) reverse<br>recovery.|-|31|-|ns| |Rise time|tØ||-|60|-|ns| |Turn-off delay time|tÁñÓËËò||-|265|-|ns| |Fall time|tË||-|27|-|ns| |Turn-on energy|EÓÒ||-|3.00|-|mJ| |Turn-off energy|EÓËË||-|1.70|-|mJ| |Total switching energy|EÚÙ||-|4.70|-|mJ| ## **Switching Characteristic, Inductive Load, at TÝÎ = 175°C** |Parameter|Symbol|Conditions||Value||Unit| |---|---|---|---|---|---|---| ||||min.|typ.|max.|| |IGBT Characteristic||||||| |Turn-on delay time|tÁñÓÒò|TÝÎ = 175°C,<br>V†† = 400V, I† = 75.0A,<br>V•Š = 0.0/15.0V,<br>r• = 5.2Â, Lÿ = 90nH,<br>Cÿ = 50pF<br>Lÿ, Cÿ from Fig. E<br>Energy losses include “tail” and<br>diode (IKW75N60H3) reverse<br>recovery.|-|30|-|ns| |Rise time|tØ||-|55|-|ns| |Turn-off delay time|tÁñÓËËò||-|305|-|ns| |Fall time|tË||-|27|-|ns| |Turn-on energy|EÓÒ||-|4.20|-|mJ| |Turn-off energy|EÓËË||-|2.00|-|mJ| |Total switching energy|EÚÙ||-|6.20|-|mJ| Rev. 1.2, 2011-12-13 5 IGW75N60H3 **==> picture [147 x 65] intentionally omitted <==** High speed switching series third generation **==> picture [476 x 623] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>140<br>100<br>120<br>tÔ=1µs<br>100 10µs<br>10<br>50µs<br>80<br>100µs<br>200µs<br>60<br>500µs<br>T†=80° 1 DC<br>40<br>T†=110°<br>20<br>0 0.1<br>1 10 100 1 10 100 1000<br>f, SWITCHING FREQUENCY [kHz] V†Š, COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency (D=0, T†=25°C, TÎù175°C; V•Š=15V)<br>(TÎù175°C, D=0.5, V†Š=400V, V•Š=15/0V,<br>R•=5,2Â)<br>450 140<br>400<br>120<br>350<br>100<br>300<br>80<br>250<br>200<br>60<br>150<br>40<br>100<br>20<br>50<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T†, CASE TEMPERATURE [°C] T†, CASE TEMPERATURE [°C]<br>I†, COLLECTOR CURRENT [A] I†, COLLECTOR CURRENT [A]<br>PÚÓÚ, POWER DISSIPATION [W] I†, COLLECTOR CURRENT [A]<br>**----- End of picture text -----**<br> **Figure 3. Power dissipation as a function of case temperature** (TÎù175°C) **Figure 4. Collector current as a function of case temperature** (V•Šú15V, TÎù175°C) Rev. 1.2, 2011-12-13 6 IGW75N60H3 **==> picture [147 x 65] intentionally omitted <==** ## High speed switching series third generation **==> picture [231 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>175 V•Š=20V<br>17V<br>150 15V<br>13V<br>125 11V<br>9V<br>100<br>7V<br>5V<br>75<br>50<br>25<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V†Š, COLLECTOR-EMITTER VOLTAGE [V]<br>I†, COLLECTOR CURRENT [A]<br>**----- End of picture text -----**<br> **Figure 5. Typical output characteristic** (TÎ=25°C) **==> picture [231 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>175 V•Š=20V<br>17V<br>150 15V<br>13V<br>125 11V<br>9V<br>100<br>7V<br>5V<br>75<br>50<br>25<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V†Š, COLLECTOR-EMITTER VOLTAGE [V]<br>I†, COLLECTOR CURRENT [A]<br>**----- End of picture text -----**<br> **Figure 6. Typical output characteristic** (TÎ=175°C) **==> picture [230 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>TÎ=25°C<br>TÎ=175°C<br>200<br>150<br>100<br>50<br>0<br>5 6 7 8 9 10 11 12<br>V•Š, GATE-EMITTER VOLTAGE [V]<br>I†, COLLECTOR CURRENT [A]<br>**----- End of picture text -----**<br> **Figure 7. Typical transfer characteristic** (V†Š=20V) **==> picture [232 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0<br>I†=37.5A<br>I†=75A<br>I†=150A<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0 25 50 75 100 125 150 175<br>TÎ, JUNCTION TEMPERATURE [°C]<br>V†ŠñÙÈÚò, COLLECTOR-EMITTER SATURATION [A]<br>**----- End of picture text -----**<br> **Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature** (V•Š=15V) Rev. 1.2, 2011-12-13 7 IGW75N60H3 **==> picture [147 x 65] intentionally omitted <==** ## High speed switching series third generation **==> picture [473 x 621] intentionally omitted <==** **----- Start of picture text -----**<br> tÁñÓËËò<br>tË<br>tÁñÓÒò<br>tØ<br>tÁñÓËËò<br>1000<br>tË<br>tÁñÓÒò<br>tØ<br>100<br>100<br>10 10<br>15 30 45 60 75 90 105 120 135 150 2 7 12 17 22 27 32<br>I†, COLLECTOR CURRENT [A] R•, GATE RESISTOR [Â]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current gate resistor<br>(ind. load, TÎ=175°C, V†Š=400V, (ind. load, TÎ=175°C, V†Š=400V,<br>V•Š=15/0V, R•=5,2Â, test circuit in Fig. E) V•Š=15/0V, I†=75A, test circuit in Fig. E)<br>6.0<br>typ.<br>min.<br>5.5 max.<br>tÁñÓËËò<br>tË 5.0<br>tÁñÓÒò<br>tØ<br>4.5<br>100<br>4.0<br>3.5<br>3.0<br>2.5<br>10 2.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>TÎ, JUNCTION TEMPERATURE [°C] TÎ, JUNCTION TEMPERATURE [°C]<br>t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns]<br>t, SWITCHING TIMES [ns]<br>V•ŠñÚÌò, GATE-EMITTER THRESHOLD VOLTAGE [V]<br>**----- End of picture text -----**<br> **==> picture [206 x 38] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 11. Typical switching times as a function of<br>junction temperature<br>(ind. load, V†Š=400V, V•Š=15/0V,<br>I†=75A, R•=5,2Â, test circuit in Fig. E)<br>**----- End of picture text -----**<br> **Figure 12. Gate-emitter threshold voltage as a function of junction temperature** (I†=1,2mA) Rev. 1.2, 2011-12-13 8 IGW75N60H3 **==> picture [147 x 65] intentionally omitted <==** High speed switching series third generation **==> picture [232 x 623] intentionally omitted <==** **----- Start of picture text -----**<br> 18<br>EÓËË<br>EÓÒ<br>16 EÚÙ<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>10 30 50 70 90 110 130 150<br>I†, COLLECTOR CURRENT [A]<br>Figure 13. Typical switching energy losses as a<br>function of collector current<br>(ind. load, TÎ=175°C, V†Š=400V,<br>V•Š=15/0V, R•=5,2Â, test circuit in Fig.<br>E)<br>7<br>EÓËË<br>EÓÒ<br>EÚÙ<br>6<br>5<br>4<br>3<br>2<br>1<br>25 50 75 100 125 150 175<br>TÎ, JUNCTION TEMPERATURE [°C]<br>E, SWITCHING ENERGY LOSSES [mJ]<br>E, SWITCHING ENERGY LOSSES [mJ]<br>**----- End of picture text -----**<br> **Figure 15. Typical switching energy losses as a function of junction temperature** (ind load, V†Š=400V, V•Š=15/0V, I†=75A, R•=5,2Â, test circuit in Fig. E) **==> picture [210 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>EÓËË<br>EÓÒ<br>14 EÚÙ<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>2 7 12 17 22 27 32<br>R•, GATE RESISTOR [Â]<br>**----- End of picture text -----**<br> **==> picture [232 x 575] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>10<br>8<br>6<br>4<br>2<br>0<br>2 7 12 17 22 27 32<br>R•, GATE RESISTOR [Â]<br>Figure 14. Typical switching energy losses as a<br>function of gate resistor<br>(ind. load, TÎ=175°C, V†Š=400V,<br>V•Š=15/0V, I†=75A, test circuit in Fig. E)<br>8.0<br>EÓËË<br>EÓÒ<br>EÚÙ<br>7.0<br>6.0<br>5.0<br>4.0<br>3.0<br>2.0<br>1.0<br>200 250 300 350 400 450<br>V†Š, COLLECTOR-EMITTER VOLTAGE [V]<br>E, SWITCHING ENERGY LOSSES [mJ]<br>E, SWITCHING ENERGY LOSSES [mJ]<br>**----- End of picture text -----**<br> **Figure 16. Typical switching energy losses as a function of collector emitter voltage** (ind. load, TÎ=175°C, V•Š=15/0V, I†=75A, - R•=5,2Â, test circuit in Fig. E) Rev. 1.2, 2011-12-13 9 IGW75N60H3 **==> picture [147 x 65] intentionally omitted <==** High speed switching series third generation **==> picture [471 x 310] intentionally omitted <==** **----- Start of picture text -----**<br> 16 1E+4<br>120V<br>480V<br>14<br>12<br>CÍÙÙ<br>CÓÙÙ<br>CØÙÙ<br>10<br>8 1000<br>6<br>4<br>2<br>0 100<br>0 100 200 300 400 500 0 5 10 15 20 25 30<br>Q•Š, GATE CHARGE [nC] V†Š, COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>(I†=75A) collector-emitter voltage<br>(V•Š=0V, f=1MHz)<br>C, CAPACITANCE [pF]<br>V•Š, GATE-EMITTER VOLTAGE [V]<br>**----- End of picture text -----**<br> **==> picture [230 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 1300<br>1200<br>1100<br>1000<br>900<br>800<br>700<br>600<br>500<br>400<br>300<br>12 13 14 15 16 17 18 19 20<br>V•Š, GATE-EMITTER VOLTAGE [V]<br>I†ñ»†ò, SHORT CIRCUIT COLLECTOR CURRENT [A]<br>**----- End of picture text -----**<br> **Figure 19. Typical short circuit collector current as a function of gate-emitter voltage** (V†Šù400V, start atTÎ=25°C) **==> picture [230 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>12<br>9<br>6<br>3<br>0<br>10 11 12 13 14 15<br>V•Š, GATE-EMITTER VOLTAGE [V]<br>t»†, SHORT CIRCUIT WITHSTAND TIME [µs]<br>**----- End of picture text -----**<br> **Figure 20. Short circuit withstand time as a function of gate-emitter voltage** (V†Šù400V, start at TÎù150°C) Rev. 1.2, 2011-12-13 10 IGW75N60H3 High speed switching series third generation **==> picture [147 x 65] intentionally omitted <==** **==> picture [228 x 274] intentionally omitted <==** **----- Start of picture text -----**<br> D=0.5<br>0.1<br>0.2<br>0.1<br>0.05<br>0.02<br>0.01<br>single pulse<br>0.01<br>i: 1 2 3 4<br>rÍ[K/W]: 0.029 0.0509 0.0733 0.1968<br>τ Í[s]: 1.2E-4 8.2E-4 9.3E-3 0.115504<br>0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>tÔ, PULSE WIDTH [s]<br>ZÚÌœ†, TRANSIENT THERMAL IMPEDANCE [K/W]<br>**----- End of picture text -----**<br> **Figure 21. IGBT transient thermal impedance** (D=tÔ/T) Rev. 1.2, 2011-12-13 11 IGW75N60H3 **==> picture [147 x 65] intentionally omitted <==** High speed switching series third generation ## PG-TO247-3 Rev. 1.2, 2011-12-13 12 IGW75N60H3 **==> picture [147 x 65] intentionally omitted <==** High speed switching series third generation **==> picture [8 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> τ<br>**----- End of picture text -----**<br> **==> picture [183 x 68] intentionally omitted <==** **==> picture [106 x 91] intentionally omitted <==** Rev. 1.2, 2011-12-13 13 IGW75N60H3 **==> picture [147 x 65] intentionally omitted <==** High speed switching series third generation ## Revision History ## IGW75N60H3 ## **Revision: 2011-12-13, Rev. 1.2** |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |1.1|2011-12-07|Preliminary data sheet| |1.2|2011-12-13|Preliminary data sheet| ## We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2011 Infineon Technologies AG All Rights Reserved. ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2, 2011-12-13 14
Updated at June 9, 2026
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