Image not available
Illustrative purposes only
IGW50N65H5FKSA1
IGBT, 50 A, 1.65 V, 305 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:305W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins;
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 305W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 50A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.28 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## IGBT
High speed 5 IGBT in TRENCHSTOP __ TM 5 technology
IGW50N65H5
IGW50N65H5
**==> picture [468 x 294] intentionally omitted <==**
**----- Start of picture text -----**<br>
High speed 5 IGBT in TRENCHSTOP __ TM 5 technology<br>Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>¢ 650V breakdown voltage G<br>*LowQ G E<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/ ~<br>Applications:<br>¢ Uninterruptible power supplies<br>** WeldingSolar convertersconverters yr 4 -<br>* Mid to high range switching frequency converters<br>Package pin definition:<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGW50N65H5|650V|50A|1.65V|175°C|G50EH5|PG-TO247-3|
2
IGW50N65H5
**==> picture [146 x 65] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3
Rev.�2.1,��2015-05-05
IGW50N65H5
**==> picture [146 x 65] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_C||80.0<br>56.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||150.0|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||150.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||305.0<br>152.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.50|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>2000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|62.0|-|S|
Rev.�2.1,��2015-05-05
4
IGW50N65H5
**==> picture [146 x 65] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3000|-|pF|
|Output capacitance|_C_oes||-|50|-||
|Reverse transfer capacitance|_C_res||-|11|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=50.0A,<br>_V_GE=15V|-|120.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|180|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|0.52|-|mJ|
|Turn-off energy|_E_off||-|0.18|-|mJ|
|Total switchingenergy|_E_ts||-|0.70|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|200|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.11|-|mJ|
|Turn-off energy|_E_off||-|0.05|-|mJ|
|Total switchingenergy|_E_ts||-|0.16|-|mJ|
Rev.�2.1,��2015-05-05
5
IGW50N65H5
**==> picture [146 x 65] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|205|-|ns|
|Fall time|_t_f||-|26|-|ns|
|Turn-on energy|_E_on||-|0.75|-|mJ|
|Turn-off energy|_E_off||-|0.27|-|mJ|
|Total switchingenergy|_E_ts||-|1.02|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|250|-|ns|
|Fall time|_t_f||-|35|-|ns|
|Turn-on energy|_E_on||-|0.20|-|mJ|
|Turn-off energy|_E_off||-|0.08|-|mJ|
|Total switchingenergy|_E_ts||-|0.28|-|mJ|
6
Rev.�2.1,��2015-05-05
~~High speed switching series fifth generation~~ IGW50N65H5
**==> picture [235 x 290] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>a A SA<br>— ee ee<br>< ae<br>5 TICES<br>esd 10 Sale:<br>tp=1µs<br>CO Re eee<br>oO p—} ft tt a et ASes<br>| 10µs Let<br>or ee Aa em eee esa<br>o eT Ce NINTTT<br>50µs<br>p eer eebeclin Nl<br>100µs<br>: terme<br>BL 1 etl 200µs ect NU<br>500µs<br>|PCraatt<br>DC<br>eet<br>0.1<br>1 10 100 1000<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Forward bias safe operating area<br>( D =0, T C =25°C, T vj 175°C; V GE=15V.<br>Recommended use at V GE ≥ 7.5V)<br>I C<br>**----- End of picture text -----**<br>
**==> picture [233 x 273] intentionally omitted <==**
**----- Start of picture text -----**<br>
300<br>= | | |<br>270 \<br>240<br>ee PN FF |<br>z<br>= 210 PINT ff<br>=og 180 Pot KP]<br>7) 150 Pf fF NG]<br>o<br>120<br>[KA<br>NT<br>9060 PotPIN<br>30 a ee eee<br>0<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>tot<br>P<br>**----- End of picture text -----**<br>
> Figure 2. Power **temperature** ( _T_ vj ≤ 175°C)
**==> picture [469 x 312] intentionally omitted <==**
**----- Start of picture text -----**<br>
90 150<br>80 135<br>ee ee ee | [eae]<br>120<br>70 VGE=20V<br>ef pNP 105 18V Gy<br>60 N O je a<br>15V<br>90<br>Pp 50 12V ee<br>© ‘ 2 75 10V a<br>: 40 \ © Aff] |<br>8V<br>60<br>Po e | we<br>a) NPa) 7V etn<br>30<br>45<br>6V<br>20<br>30 5V<br>10 15<br>pppo| | tN No L- SR<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br>
7
IGW50N65H5 High speed switching series fifth generation
**==> picture [474 x 623] intentionally omitted <==**
**----- Start of picture text -----**<br>
150 150<br>140 Tj=25°C<br>135 Lor) S Tj=150°C oo<br>130<br>=<br>120 VGE=20V coh / J ee 120 PteePE e eeees|Teae<br>110<br>105 18V<br>2 | Cows F e<br>100<br>15V<br>pL IW 6 peepee<br>90 90<br>12V<br>80<br>75 10V<br>Gee ae Gessner 70 ace<br>x a 8V fs) Pt tt tt dy<br>5 60 fo a 60<br>7V<br>50<br>45<br>io 6V Ae ee 40 eeeeer eee<br>° 30 5V WeTK 30 PEPE |EET<br>20<br>Peo |<br>15<br>| 10 ae<br>Aee N ee<br>0 0<br>0 1 2 3 4 5 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=150°C) ( V CE=20V)<br>2.50 1000<br>IC=12,5A td(off)<br>IC=25A | tf potTT<br>S 2.25 IC=50A I td(on) aee<br>tr<br>Ss eEl) T P | ee a ee eee<br>2.00<br>| |) R EE<br>100<br>Beer] 2 LCCCEE ce<br>1.75<br>ELEESp 1.50 — a eee<br>ERT] Repo<br>ee 1.25<br>ee ee 10<br>ee<br>1.00<br>fe) a<br>° pot ft tT<br>“TTT |) RB BReEREEE<br>0.75<br>PEPE) Geporr<br>0.50 1<br>0 25 50 75 100 125 150 175 0 30 60 90 120 150<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>I C I C<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
_T_ vj _V_ CE=400V, _V_ inteOv GE _r_ G=12 Ω ~ Byncinic test circuit in Figure E)
8
IGW50N65H5
**==> picture [233 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000<br>1 td(off)d(off) a a a<br>t tff a<br>FE td(on)d(on) ee<br>I trr i<br>a a<br>————— =<br>SS 100<br>9)aa aaa aeeeeaeeeeaeeaa es ee<br>a<br>dSg Fo<br>So eeeeeeeeeeee<br>8 5<br>E<br>10<br>_<br>a eeee eeeeee<br>a a<br>1<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>**----- End of picture text -----**<br>
**==> picture [446 x 328] intentionally omitted <==**
**----- Start of picture text -----**<br>
td(off) 1 td(off)d(off) a a a<br>1000 e tf e t tff a<br>= td(on) SSS FE td(on)d(on) ee<br>' tr a I trr i<br>1 a cs<br>— — —— a a<br>e e ee —————<br>e e<br>= SS 100<br>Yn<br>100<br>a ee 9)aa aaa aeeeeaeeeeaeeaa es<br>= es ee ae eens ee ee a<br>Q> ~po] [oe] eesee e r] gdSg Fo<br>aCO Sere So eeeeeeeeeeee<br>E [owe| | | |} 8 5<br>ee te E<br>10<br>10<br>[_——a _<br>aPTa a a a eeee eeeeee<br>es [sO] a a<br>1 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =25A,Dynamic test circuitin I C =25A, r G=12 ,Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>
**==> picture [474 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
6.0 12<br>typ. Eoff<br>5.5 min. 11 Eon<br>max. Ets<br>ee eee<br>Ww 10 Co /<br>ee ee ee<br>5.0<br>ef =) ;<br>9<br>4.5<br>2a — SAL~ (op)Bettwy 8 ee7<br>gk /<br>So) 4.0 hb | _ = pan /<br>i — ae 25 7 yy, y<br>x 3.5 ~~ : ~>s x 6 / 4<br>iad ~ /<br>5<br>ui 3.0 ~ ~~ oO<br>e:E [owt~ . PORaS| feeee 4 Eeeeaap<br>2.5<br>e {| ON 8 , ;<br>t SS nna 3<br>2.0<br>é° aes ~N ee 2 2< oeLX<br>1.5 eZee aeeee<br>eee 1 Zz<br>1.0 0<br>ee<br>0 25 50 75 100 125 150 0 30 60 90 120 150<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.5mA)
Figure 12.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=12 Ω ,Dynamic test Figure E)
9
IGW50N65H5
**==> picture [474 x 622] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.50 1.2<br>Eoff Eoff<br>2.25 Eon Eon<br>Ets Ets<br>ELLY Ee Peeee“7<br>7 1.0 er<br>vy en ce<br>7- 2.00 tr ill bli.7 rae-<br>uw 1.75 Z uw Lo<br>io) 7 op) 0.8 LoT<br>ge for 8 = =<br>1.50<br>2 7 7 L _ 2 = bs<br>WW 1.25 L WW 0.6 =<br>aoO 1.00 ae7 “ a oO eee<br>0.4<br>sp fer |Lee<br>0.75<br>| 3<br>i 0.50 re<br>Be]:> 0.2 , ee<br>0.25<br>0.00 0.0<br>PP [yet] ty<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses asa Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =25A, Dynamic test circuit in I C =25A, r G=12 ,Dynamic test circuit in<br>Figure E) Figure E)<br>1.2 16<br>Eoff 130V<br>Eon 520V<br>Ets 14<br>ER Ed ln<br>e e ee 4;<br>Ee 1.0 ee ee Li.<br>12<br>0.8<br>g ae pe<br>fe)a a 4 <xB 10 J<br>0 “ “eo 4 7 Oa<br>0.6 8<br>ae e ee<br>6<br>x E<br>O 0.4 7 <<<br>= [.] 4<br>. 0.2 eeefpSS ee<br>2<br>re<br>0.0 0<br>200 250 300 350 400 450 500 0 20 40 60 80 100 120<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=50A)
**==> picture [91 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
T vj =150°C, V GE=15/0V,<br>**----- End of picture text -----**<br>
_I_ C =25A, _r_ G=12 Figure E)
10
High speed switching series fifth generation IGW50N65H5
**==> picture [469 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
1<br>1E+4 i f CCiesoes rs e] se ee PTPFCe Ct ee ee et eeet<br>Cres<br>e t p o S, He To onal<br>ea eae rn Pa. a eae ee cio | |<br>a a L S ry PT Lea D=0.5 |<br>0.2<br>1000<br>Cc p _ > —————————a de ee ?ee 0.1 |ITereeaa av/ al 0.1 CoIlloo<br>0.05<br>S O<br>0.02<br>O = 7 Tt AT... MT<br>E PoOoNY LA ff AL 0.01<br>eoO 100 I N)na Eea / Pa single pulse<br>SS —————— re)| || |<br>SP~ ee2 0.01 Le,zalLT DlA<br>10 ee es ee eee Zz PTaCAC A t ie R2 WHTil<br>——— s Per TL CATT -- [ll<br>_—— ———————— ——————]- PRPLT ALL TTI cece cared If||<br>a UTI PAI | SEM CITPTET<br>i: 1 2 3<br>ri[K/W]: 0.1621884 0.2278266 0.109985<br>τ i[s]: 8.6E-4 0.01112208 0.09568113<br>1 aee eee 0.001 |ul | Te<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
**==> picture [61 x 29] intentionally omitted <==**
**----- Start of picture text -----**<br>
Figure 17.<br>( V GE<br>**----- End of picture text -----**<br>
> Figure 18. IGBT ( _D_ = _t_ p/T)
11
IGW50N65H5
High�speed�switching�series�fifth�generation
**==> picture [146 x 65] intentionally omitted <==**
## **Package Drawing PG-TO247-3**
12
Rev.�2.1,��2015-05-05
IGW50N65H5
High�speed�switching�series�fifth�generation
**==> picture [146 x 65] intentionally omitted <==**
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
**==> picture [153 x 99] intentionally omitted <==**
**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
13
Rev.�2.1,��2015-05-05
IGW50N65H5
## IGW50N65H5
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2012-11-09|Preliminarydata sheet|
|1.2|2013-12-17|New MarkingPattern|
|2.1|2015-05-05|Final data sheet|
## **Information**
## **Warnings**
endangered.
14
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →