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IGW40T120FKSA1
IGBT, 40 A, 2.3 V, 270 W, 1.2 kV, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.3V; Power Dissipation Pd:270W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Ope
- MSL: -
- SVHC: No SVHC (23-Jan-2024)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 270W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 150°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2.3V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 3.28 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGW40T120 TrenchStop[®] Series ## Low Loss IGBT in TrenchStop[®] and Fieldstop technology - Short circuit withstand time – 10s - Designed for : - Frequency Converters - Uninterrupted Power Supply - TrenchStop[®] and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) - Low EMI C G & E PG-TO-247-3 - Low Gate Charge - Qualified according to JEDEC[1] for target applications - Pb-free lead plating; RoHS compliant - Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ |**Maximum Ratings**|||| |---|---|---|---| |**Parameter**|**Symbol**<br>~~—|_—_~~|**Value**<br>~~—|_—_~~|**Unit**<br>~~—|_—_~~| |Collector-emitter voltage|_V_C E<br>~~—|_—_~~|1200<br>~~—|_—_~~|V<br>~~—|_—_~~| |DC collector current<br>_T_C= 25C<br>_T_C= 100C|_I_C<br>~~pf~~|75<br>40<br>~~pf~~|A<br>~~pf~~<br>~~Cf~~<br>~~ee~~| |Pulsed collector current,_t_plimited by_T_jmax|_I_Cp ul s<br>~~pf~~|105<br>~~pf~~|| |Turn off safe operating area<br>_V_CE1200V,_T_j150C|_-_<br>~~Cf~~<br>~~ee~~|105<br>~~Cf~~<br>~~ee~~|| |Gate-emitter voltage|_V_G E<br>~~ee~~|20<br>~~ee~~|V<br>~~ee~~| |Short circuit withstand time2)<br>_V_GE= 15V,_V_CC1200V,_T_j150C|_t_SC<br>~~ee~~<br>~~ef~~|10<br>~~ee~~<br>~~ef~~|s<br>~~ee~~<br>~~ef~~| |Power dissipation<br>_T_C= 25C|_P_t ot<br>~~Cf~~<br>~~ee~~|270<br>~~Cf~~<br>~~eee~~|W<br>~~Cf~~<br>~~eee~~| |Operating junction temperature|_T_ j<br>~~ee~~|-40...+150<br>~~eee~~|C<br>~~eee~~<br>~~+}~~| |Storage temperature|_T_stg<br>~~ee~~<br>~~+}~~|-55...+150<br>~~eee~~<br>~~+}~~|| |Solderingtemperature, 1.6mm(0.063 in.)from case for 10s|-<br>~~+}~~|260<br>~~+}~~|| > 1 J-STD-020 and JESD-022 > 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Rev. 2.4 Nov. 09 1 Power Semiconductors IGW40T120 TrenchStop[®] Series **==> picture [137 x 61] intentionally omitted <==** ## **Thermal Resistance** |**Thermal Resistance**||||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**| |**Characteristic**||||| |IGBT thermal resistance,<br>junction – case|_R_t hJC||0.45|K/W| |Thermal resistance,<br>junction – ambient|_R_t hJA||40|| ## **Electrical Characteristic,** at _T_ j = 25 C, unless otherwise specified |**Electrical Characteristic,**at_T_j= 25|C, unless ot|herwise specified||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**Static Characteristic**||||||| |Collector-emitter breakdown voltage|_V_( BR )C ES|_V_G E=0V, _I_C=1.5mA|1200|-|-|V| |Collector-emitter saturation voltage|_V_C E( sat )|_V_G E = 15V, _I_C=40A<br>_T_j=25C<br>_T_j=125C<br>_T_j=150C|-<br>-<br>-|1.7<br>2.1<br>2.3|2.3<br>-<br>-|| |Gate-emitter threshold voltage|_V_G E( t h)|_I_C=1.5mA,_V_C E=_V_G E|5.0|5.8|6.5|| |Zero gate voltage collector current|_I_CE S|_V_C E=1200V,<br>_V_G E=0V<br>_T_j=25C<br>_T_j=150C|-<br>-|-<br>-|0.4<br>4.0|mA| |Gate-emitter leakage current|_I_GE S|_V_C E=0V,_V_G E=20V|-|-|600|nA| |Transconductance|_g_fs|_V_C E=20V, _I_C=40A|-|21|-|S| |Integratedgate resistor|_RG int_|||6||Ω| Rev. 2.4 Nov. 09 2 Power Semiconductors IGW40T120 TrenchStop[®] Series **==> picture [137 x 61] intentionally omitted <==** ## **Dynamic Characteristic** |**Dynamic Characteristic**||||||| |---|---|---|---|---|---|---| |Input capacitance|_C_i ss|_V_C E=25V,<br>_V_G E=0V,<br>_f_=1MHz|-|2500|-|pF| |Output capacitance|_C_os s||-|130|-|| |Reverse transfer capacitance|_C_rs s||-|110|-|| |Gate charge|_Q_Gat e|_V_C C=960V, _I_C=40A<br>_V_G E=15V|-|203|-|nC| |Internal emitter inductance<br>measured 5mm(0.197 in.)from case|_L_E||-|13|-|nH| |Short circuit collector current1)|_I_C( SC )|_V_G E=15V,_t_SC10s<br>_V_C C = 600V,<br>_T_j =<br>25C|-|210|-|A| ## **Switching Characteristic, Inductive Load,** at _T_ j=25 C |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBT Characteristic**||||||| |Turn-on delaytime|_t_d( o n)|_T_j=25C,<br>_V_C C=600V,_I_C=40A,<br>_V_G E=0/15V,<br>_R_G=15,<br>_L_<br>_2 )_=180nH,<br>_C_<br>_2)_=39pF<br>Energy losses include<br>“tail” and diode<br>reverse recovery.|-|48|-|ns| |Rise time|_t_r||-|34|-|| |Turn-off delaytime|_t_d( of f)||-|480|-|| |Fall time|_t_f||-|70|-|| |Turn-on energy|_E_o n||-|3.3|-|mJ| |Turn-off energy|_E_o ff||-|3.2|-|| |Total switchingenergy|_E_t s||-|6.5|-|| ## **Switching Characteristic, Inductive Load,** at _T_ j=150 C |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBT Characteristic**||||||| |Turn-on delaytime|_t_d( o n)|_T_j=150C<br>_V_C C=600V,_I_C=40A,<br>_V_G E=0/15V,<br>_R_G= 15_,_<br>_L_<br>_2 )_=180nH,<br>_C_<br>_2)_=39pF<br>Energy losses include<br>“tail” and diode<br>reverse recovery.|-|52|-|ns| |Rise time|_t_r||-|40|-|| |Turn-off delaytime|_t_d( of f)||-|580|-|| |Fall time|_t_f||-|120|-|| |Turn-on energy|_E_o n||-|5.0|-|mJ| |Turn-off energy|_E_o ff||-|5.4|-|| |Total switchingenergy|_E_t s||-|10.4|-|| > 1) Allowed number of short circuits: <1000; time between short circuits: >1s. > 2) Leakage inductance _L_ and Stray capacity _C_ due to dynamic test circuit in Figure E. Rev. 2.4 Nov. 09 3 Power Semiconductors IGW40T120 TrenchStop[®] Series **==> picture [137 x 61] intentionally omitted <==** **==> picture [477 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 100A<br>100A t p=3µs<br>T C=80°C<br>10µs<br>80A T C =110°C<br>10A<br>50µs<br>60A<br>150µs<br>40A<br>Ic 1A 500µs<br>20A<br>I c 20ms<br>DC<br>0A 0,1A<br>10Hz 100Hz 1kHz 10kHz 100kHz<br>1V 10V 100V 1000V<br>f , SWITCHING FREQUENCY V CE, COLLECTOR-EMITTER VOLTAGE<br>Figure 1. Collector current as a function of Figure 2. Safe operating area<br>switching frequency ( D = 0, T C = 25C,<br>( T j 150C, D = 0.5, V CE = 600V, T j 150C; V GE=15V)<br>V GE = 0/+15V, R G = 15)<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>I C, I C,<br>**----- End of picture text -----**<br> **==> picture [236 x 269] intentionally omitted <==** **----- Start of picture text -----**<br> 250W<br>200W<br>150W<br>100W<br>50W<br>0W<br>25°C 50°C 75°C 100°C 125°C<br>T C, CASE TEMPERATURE<br>Figure 3. Power dissipation as a function of<br>case temperature<br>( T j 150C)<br>POWER DISSIPATION<br>tot,<br>P<br>**----- End of picture text -----**<br> **==> picture [230 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> 70A<br>60A<br>50A<br>40A<br>30A<br>20A<br>10A<br>0A<br>25°C 75°C 125°C<br>T C, CASE TEMPERATURE<br>COLLECTOR CURRENT<br>I C,<br>**----- End of picture text -----**<br> **Figure 4. Collector current as a function of case temperature** ( _V_ GE 15V, _T_ j 150C) Rev. 2.4 Nov. 09 4 Power Semiconductors IGW40T120 **==> picture [137 x 61] intentionally omitted <==** ## TrenchStop[®] Series **==> picture [474 x 259] intentionally omitted <==** **----- Start of picture text -----**<br> 100A 100A<br>90A 90A<br>80A V GE=17V 80A V GE=17V<br>70A 15V 70A 15V<br>13V 13V<br>60A 60A<br>11V 11V<br>50A 50A<br>9V 9V<br>40A 40A<br>7V 7V<br>30A 30A<br>20A 20A<br>10A 10A<br>0A 0A<br>0V 1V 2V 3V 4V 5V 6V 0V 1V 2V 3V 4V 5V 6V<br>V CE, COLLECTOR-EMITTER VOLTAGE V CE, COLLECTOR-EMITTER VOLTAGE<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T j = 25°C) ( T j = 150°C)<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>I C, I C,<br>**----- End of picture text -----**<br> **==> picture [474 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> 100A<br>90A 3,5V<br>80A 3,0V IC =80A<br>70A<br>2,5V<br>60A<br>50A 2,0V I C =40A<br>40A 1,5V I C =25A<br>30A<br>1,0V I C =10A<br>20A<br>10A T J=150°C25°C 0,5V<br>0A 0,0V<br>0V 2V 4V 6V 8V 10V 12V -50°C 0°C 50°C 100°C<br>V GE, GATE-EMITTER VOLTAGE T J, JUNCTION TEMPERATURE<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter<br>(VCE=20V) saturation voltage as a function of<br>junction temperature<br>( V GE = 15V)<br>EMITT SATURATION VOLTAGE<br>-<br>COLLECTOR CURRENT<br>I C,<br> COLLECTOR<br>CE(sat),<br>V<br>**----- End of picture text -----**<br> Rev. 2.4 Nov. 09 Power Semiconductors 5 IGW40T120 TrenchStop[®] Series **==> picture [137 x 61] intentionally omitted <==** **==> picture [234 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>d(off)<br>100ns t f<br>t<br>d(on)<br>10ns t r<br>1ns<br>0A 20A 40A 60A<br>IC , COLLECTOR CURRENT<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> - **Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ J=150°C, _V_ CE=600V, VGE=0/15V, _R_ G=15Ω, Dynamic test circuit in Figure E) **==> picture [228 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 ns<br>t<br>d(off)<br>t f<br>100 ns<br>t<br>d(on)<br>t r<br>10 ns<br>1 ns<br> <br>R G, GATE RESISTOR<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> **Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ J=150°C, _V_ CE=600V, VGE=0/15V, _I_ C=40A, Dynamic test circuit in Figure E) **==> picture [469 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> t d(off)<br>7V<br>6V<br>5V max.<br>100ns typ.<br>4V<br>t f min.<br>3V<br>t<br>d(on)<br>t r 2V<br>1V<br>10ns 0V<br>0°C 50°C 100°C 150°C -50°C 0°C 50°C 100°C 150°C<br>T J, JUNCTION TEMPERATURE T J, JUNCTION TEMPERATURE<br>EMITT TRSHOLD VOLTAGE<br>SWITCHING TIMES -<br>t,<br> GATEGE(th ) ,<br>V<br>**----- End of picture text -----**<br> **Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE=600V, VGE=0/15V, _I_ C=40A, _R_ G=15Ω, Dynamic test circuit in Figure E) **Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 1.5mA) Rev. 2.4 Nov. 09 6 Power Semiconductors IGW40T120 TrenchStop[®] Series **==> picture [137 x 61] intentionally omitted <==** **==> picture [233 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> *) E on and E tsinclude losses<br>due to diode recovery<br>25,0mJ<br>E ts*<br>20,0mJ<br>15,0mJ<br>E on*<br>10,0mJ<br>E off<br>5,0mJ<br>0,0mJ<br>10A 20A 30A 40A 50A 60A 70A<br>IC , COLLECTOR CURRENT<br>SWITCHING ENERGY LOSSES<br>E ,<br>**----- End of picture text -----**<br> **Figure 13. Typical switching energy losses as a function of collector current** (inductive load, _T_ J=150°C, _V_ CE=600V, VGE=0/15V, _R_ G=15Ω, Dynamic test circuit in Figure E) **==> picture [235 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> *) E on and E ts include losses<br>due to diode recovery<br>15mJ<br>E ts*<br>10mJ<br>E off<br>5mJ<br>E on*<br>0mJ<br>50°C 100°C 150°C<br>T J, JUNCTION TEMPERATURE<br>SWITCHING ENERGY LOSSES<br>E ,<br>**----- End of picture text -----**<br> **Figure 15. Typical switching energy losses as a function of junction temperature** - (inductive load, _V_ CE=600V, VGE=0/15V, _I_ C=40A, _R_ G=15Ω, Dynamic test circuit in Figure E) **==> picture [228 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> *) E on and E ts include losses<br>due to diode recovery *<br>15 mJ E ts<br>10 mJ<br>E on*<br>E off<br>5 mJ<br>0 mJ<br> <br>R G, GATE RESISTOR<br>SWITCHING ENERGY LOSSES<br>E ,<br>**----- End of picture text -----**<br> **Figure 14. Typical switching energy losses as a function of gate resistor** (inductive load, _T_ J=150°C, _V_ CE=600V, VGE=0/15V, _I_ C=40A, Dynamic test circuit in Figure E) **==> picture [230 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> *) E on and E ts include losses<br>due to diode recovery<br>15mJ<br>10mJ<br>E ts*<br>5mJ<br>E off<br>E on*<br>0mJ<br>400V 500V 600V 700V 800V<br>VCE , COLLECTOR-EMITTER VOLTAGE<br>SWITCHING ENERGY LOSSES<br>E ,<br>**----- End of picture text -----**<br> **Figure 16. Typical switching energy losses as a function of collector emitter voltage** (inductive load, _T_ J=150°C, VGE=0/15V, _I_ C=40A, _R_ G=15Ω, Dynamic test circuit in Figure E) Rev. 2.4 Nov. 09 Power Semiconductors 7 IGW40T120 TrenchStop[®] Series **==> picture [137 x 61] intentionally omitted <==** **==> picture [236 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>240V 960V<br>10V<br>5V<br>0V<br>0nC 50nC 100nC 150nC 200nC 250nC<br>Q GE, GATE CHARGE<br>EMITTER VOLTAGE<br>-<br>GATE<br>GE,<br>V<br>**----- End of picture text -----**<br> **Figure 17. Typical gate charge** ( _I_ C=40 A) **==> picture [232 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> 15µs<br>10µs<br>5µs<br>0µs<br>12V 14V 16V<br>V GE, GATE-EMITTETR VOLTAGE<br>SHORT CIRCUIT WITHSTAND TIME<br>t SC,<br>**----- End of picture text -----**<br> **Figure 19. Short circuit withstand time as a function of gate-emitter voltage** ( _V_ CE=600V _,_ start at _T_ J _=_ 25°C _)_ **==> picture [230 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> C iss<br>1nF<br>C oss<br>100pF<br>C rss<br>10pF<br>0V 10V 20V<br>CAPACITANCE<br>c,<br>**----- End of picture text -----**<br> **==> picture [149 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br> **Figure 18. Typical capacitance as a function of collector-emitter voltage** ( _V_ GE=0V, _f_ = 1 MHz) **==> picture [232 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> 300A<br>200A<br>100A<br>0A<br>12V 14V 16V 18V<br>V GE, GATE-EMITTETR VOLTAGE<br>COLLECTOR CURRENT<br>, short circuit<br>I C(sc)<br>**----- End of picture text -----**<br> **Figure 20. Typical short circuit collector current as a function of gateemitter voltage** ( _V_ CE 600V, _T_ j 150C) Rev. 2.4 Nov. 09 8 Power Semiconductors IGW40T120 TrenchStop[®] Series **==> picture [137 x 61] intentionally omitted <==** **==> picture [231 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> V<br>CE<br>600V 60A<br>400V 40A<br>200V 20A<br>I<br>C<br>0V 0A<br>0us 0.5us 1us 1.5us<br>t , TIME<br>EMITTER VOLTAGE<br>-<br>COLLECTOR<br>CE,<br>V<br>**----- End of picture text -----**<br> **Figure 21. Typical turn on behavior** (VGE=0/15V, _R_ G=15Ω, _T_ j = 150C, Dynamic test circuit in Figure E) **==> picture [230 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> 60A 600V<br>I<br>C<br>40A 400V<br>20A 200V<br>V<br>CE<br>0A 0V<br>0us 0.5us 1us 1.5us<br>t , TIME<br>COLLECTOR CURRENT<br>I C,<br>**----- End of picture text -----**<br> **Figure 22. Typical turn off behavior** (VGE=15/0V, _R_ G=15Ω, _T_ j = 150C, Dynamic test circuit in Figure E) **==> picture [228 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> D =0.5<br>10-1K/W 0.2<br>0.1<br>R , ( K / W ) , ( s )<br>0.05 0.159 1.10*10 [-1]<br>0.133 1.56*10 [-2]<br>0.02 0.120 1.35*10 [-3]<br>10-2K/W 0.01 0.038 1.51*10 [-4]<br>single pulse<br>R 1 R 2<br>C 1 = 1 / R 1 C 2 = 2 / R 2<br>10-3K/W<br>10µs 100µs 1ms 10ms 100ms<br>t P, PULSE WIDTH<br>TRANSIENT THERMAL RESISTANCE<br>thJC,<br>Z<br>**----- End of picture text -----**<br> **Figure 23. IGBT transient thermal resistance** ( _D = t_ p / _T_ ) Rev. 2.4 Nov. 09 9 Power Semiconductors IGW40T120 TrenchStop[®] Series PG-TO247-3 Rev. 2.4 Nov. 09 10 Power Semiconductors IGW40T120 ## TrenchStop[®] Series **Figure A. Definition of switching times** **==> picture [189 x 144] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2 n<br>r1 r 2 r n<br>tf tf<br>Tj (t)<br>p(t) r1 r 2 r n<br>A<br>7)<br>TC<br>(-)<br>Tr<br>Figure D. Thermal equivalent<br>circuit<br>**----- End of picture text -----**<br> **Figure B. Definition of switching losses** **Figure E. Dynamic test circuit** Leakage inductance _L_ =180nH and Stray capacity _C_ =39pF. Rev. 2.4 Nov. 09 11 Power Semiconductors IGW40T120 TrenchStop[®] Series **==> picture [137 x 61] intentionally omitted <==** Rev. 2.4 Nov. 09 12 Power Semiconductors IGW40T120 TrenchStop[®] Series **==> picture [137 x 61] intentionally omitted <==** ## **Edition 2006-01** ## **Published by Infineon Technologies AG 81726 München, Germany** ## **© Infineon Technologies AG 12/7/11. All Rights Reserved.** ## **Attention please!** The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( **www.infineon.com** ). ## **Warnings** Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 Nov. 09 13 Power Semiconductors
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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