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IGW40N60TPXKSA1
IGBT, 67 A, 1.6 V, 246 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:67A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:246W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 246W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 67A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.847 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## IGBT
TRENCHSTOP[TM] erformance
## IGW40N60DTP
> TM P erformance
IGW40N60TP
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TRENCHSTOP [TM] P erformance<br>**----- End of picture text -----**<br>
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TRENCHSTOP [TM] P erformance series<br>Features: C<br>TRENCHSTOP [TM] technology offering<br>* very low V CEsat<br>+ low turn-off losses<br>¢ short tail current<br>* low EMI G<br>* maximum junction temperature 175°C E<br>* qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>* complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>—<br>Applications:<br>* drives hag, ON<br>* solar inverters<br>* uninterruptible power supplies yr<br>* converters with medium switching frequency "<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGW40N60TP|600V|40A|1.6V|175°C|G40DTP|PG-TO247-3|
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IGW40N60TP
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## TRENCHSTOP[TM] �P erformance �Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
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IGW40N60TP
TRENCHSTOP[TM] �P erformance �Series
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||67.0<br>48.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs1)|-||120.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||246.0<br>123.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|0.41|0.61|K/W|
1) Defined by design. Not subject to production test.
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## TRENCHSTOP[TM] �P erformance �Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=2.00mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.60<br>1.94|1.80<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.64mA,_V_CE=_V_GE|4.1|5.1|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|40.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1400|-|pF|
|Output capacitance|_C_oes||-|60|-||
|Reverse transfer capacitance|_C_res||-|48|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=40.0A,<br>_V_GE=15V|-|177.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|183|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.1Ω,_R_G(off)=10.1Ω,<br>_L_σ=32nH,_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IKW40N60DTP) reverse<br>recovery.|-|18|-|ns|
|Rise time|_t_r||-|30|-|ns|
|Turn-off delaytime|_t_d(off)||-|222|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|1.06|-|mJ|
|Turn-off energy|_E_off||-|0.61|-|mJ|
|Total switchingenergy|_E_ts||-|1.67|-|mJ|
Rev.�2.1,��2016-02-05
5
IGW40N60TP
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## TRENCHSTOP[TM] �P erformance �Series
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.1Ω,_R_G(off)=10.1Ω,<br>_L_σ=32nH,_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IKW40N60DTP) reverse<br>recovery.|-|19|-|ns|
|Rise time|_t_r||-|30|-|ns|
|Turn-off delaytime|_t_d(off)||-|273|-|ns|
|Fall time|_t_f||-|47|-|ns|
|Turn-on energy|_E_on||-|1.63|-|mJ|
|Turn-off energy|_E_off||-|1.05|-|mJ|
|Total switchingenergy|_E_ts||-|2.68|-|mJ|
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Rev.�2.1,��2016-02-05
## TRENCHSTOP[TM] erformance
## IGW40N60TP Series
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ATTRA T UUIQMATUIIMNUU IIM 300<br>100 ee<br>250<br>ea<br>_ YT TT TAT TTT ert _<br>x 2 DC = 200 Ne} po<br>GB LUT eT Z .<br>a <x<br>10<br>ee=) Pt tt tt tt -Oo \<br>O ete<br>ad et te | 150 \<br>e) ed<br>BH |YT TT TT ra) \<br>eg ae \<br>100<br>SLU. 1 Pt| e)& \<br>a eeeeeee 50 \ \<br>0.1 0<br>0.1 1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T j 175°C; V GE=15V) temperature<br>I C P tot<br>**----- End of picture text -----**<br>
> Figure 2. Power **temperature** ( _T_ j ≤ 175°C)
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80 110<br>100<br>VGE=20V<br>90 15V<br>60<br>a 80 13V rae<br>11V<br>WW: RWWWW: 70 AVE<br>pO z WN<br>9V<br>60<br>g E 1] [AAA] 7V<br>40<br>50<br>—_<br>40<br>° ° ) (A<br>30<br>20 | a<r/\<br>20<br>10 PY \ \ | |<br>> aY Sa<br>0 0<br>e e<br>25 50 75 100 125 150 175 0 1 2 3 4<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C)
Figure 4. Typical ( _T_ j=25°C)
7
IGW40N60TP
## TRENCHSTOP[TM] P erformance
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110 100<br>Tj=25°C<br>100 Po Tj=175°C<br>A<br>VGE=20V<br>tf > a a<br>90 15V<br>/<br>75<br>80 13V<br>z WNLZ | ,<br>11V<br>70<br>9V a<br>a 60 WIE] § :<br>7V<br>50<br>a } a<br>50<br>OO<br>PT ORE<br>ag 40 \/WY7X —— _I<br>gS 30 |a|WS7| 8g 25 |<br>20<br>10<br>0 0<br>0 1 2 3 4 5 0 2 4 6 8 10<br>V CE COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ j=175°C)
Figure 6. Typical ( _V_ CE=20V)
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3.5<br>a a ee<br>IC=24A<br>IC=48A es<br>== IC=96A td(off) ee<br>tf<br>PS 3.0 T EP td(on) aa<br>tr<br>E a<br>100<br>: e eos ee =a_ __<br>> = Q a<br>Ep(t- seg a S a SeSScae<br>2.5<br>a =<br>Pee saraTeWw poeae ee eeee<br>a eo | | jut] ft |<br>WW = :<br>2.0<br>poOke de—_ _ EF 10 a “<br>Lu22a.45=_—— 2) —---—— a<br>a ee<br>rs) tea a eeee ee eee<br>1.5<br>| aSoe ee eee ee<br>1.0 1<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V)=15V) (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>t<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)=15V)
_r_ G=10,1
8
IGW40N60TP
TRENCHSTOP[TM] P erformance
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**----- Start of picture text -----**<br>
1000 a<br>= td(off) SSS CET<br>tf<br>I td(on) FERRERS| —— TT<br>Pom tr sCOCOteeer Eee feT e<br>td(off)<br>tf<br>e r td(on)<br>Eiht tr<br>100<br>ty yy 2<br>=9 100 ty= a e es eee<br>= @ p o<br>rs) Eeea aes OL<br>Pe frrrerrerrrrrrr<br>@ rrr) 2 |<br>6 PPresc eee} ef<br>| PSeL eer<br>Pt | | eee et etryToa)| 6 |,v7<br>Tere TELE EL <<br>10 10<br>0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (ind. load, V CE =400V, V GE =15/0V, I C=40A,<br>I C =40A, test circuit in Fig. E) r G=10,1 , test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
6.0 8<br>typ. Eoff<br>min. Eon<br>max. 7 Ets<br>s PE | El li tL<br>5.0<br>= = /<br>6<br>4.0<br>5<br>Ir /<br>op) ~~ > / /<br>ia3 sto ~AmS ow3 yj<br>LT 3.0 i Ww 4<br>- ~~ Zz /<br>iad Lu 7 7<br>Lu ~ o) ra 7<br>E \ Zz 3 7<br>iuS 2.0 ~ ae / / 4 7<br>im = 2 va Z ~.<br>1.0<br>| 1 ep TT<br>Eee<br>0.0 0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction junction temperature function of collector current<br>( I C=0,64mA)=0,64mA) (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction junction ( _I_ C=0,64mA)=0,64mA)
_r_ G=10,1
9
IGW40N60TP
TRENCHSTOP[TM] P erformance
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**----- Start of picture text -----**<br>
6 3.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>5 EEE 2.5 a Le<br>£& E ea = _e—<br>Lu “ W ae<br>7)2o 4 TLL ery 7)7p) 2.0 > - ~<br>—S TTT etyY —g U- _<br>> 7 > a7<br>w _-<br>2 TLLLer<br>3 1.5<br>ow2 LL |er dye2 =<br>Goer<br>Zz — (o) a<br>O ti Ler ty é = --T7 aa<br>¢ 2 Zz 1.0 ao<br>CT _<br>|e 1 (Leeretl] §§ 0.5 ae—<br>0 0.0<br>0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (indload, V CE =400V, V GE =15/0V, I C=40A,<br>I C =40A, test circuit in Fig. E) r G=10,1 , test circuit in Fig. E)<br>6.0 16<br>Eoff 120V<br>Eon 480V<br>Ets 14<br>_Ss 5.0 /<br>£&o 4 >ow 12 / /<br>4.0<br>oD4aoF un | @<_ 10 / //<br>“<br>3.0 olf 8<br>Ww va —_ —<br>6<br>2.0<br>== - — ao | fe)- 4<br>aaa | +r<br>1.0<br>2<br>0.0 0<br>300 350 400 450 500 550 600 0 50 100 150 200<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=40A)<br>(ind. load, T j =175°C, V GE =15/0V, I C=40A,<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
_r_ G=10,1
10
IGW40N60TP
TRENCHSTOP[TM] P erformance
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**----- Start of picture text -----**<br>
1000<br>Cies<br>e y<br>Coes<br>Cres<br>g SS E<br>S f<br>a | a soe<br>GFaN<br>SN 100<br>———_———<br>a ee<br>pe]<br>10<br>0 10 20 30<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of<br>( soe V GE LIME<br>C<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
ee 350 Oe<br>300<br>WA<br>Se LT<br>ee 250 UEEREEEEELEet<br>Re PO<br>200<br>4<br>eeAe<br>epE 150 ZeeLA<br>rna 100 Aen<br>50<br>*<br>0<br>12 13 14 15 16 17 18 19 20<br>V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 18. Typical short circuit collector current as a<br>( function) V CE of gate emitter T j=25°C) voltage<br>I C(SC)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
16 pip ft tt | ee een amet anatase a |a<br>Ne ee<br>ee 14<br>0.1<br>D=0.5<br>2 ENO ee NU<br>12<br>0.2<br>LGN 0.1<br>| ||<br>< 10 mit 0.05<br>» {it} NU EeeS 0.02<br>e {tit NEE te 0.01 eae il<br>= 8 | >PDDD NI] 2 Geez Tete CT 0.01 lll<br>e z= meee ae eat single pulse<br>5 | | fi fy i oe NG] LG ect anit ett ee<br>ge 6 I RY 1 III<br>>eo?ft} NI Zz eI/| o I<br>0.001<br>4<br>| ee Iman!<br>50 See Z2 eaaeereerasPT AIG LH or, i.t- inatiAe<br>2 See eee eH a<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.01470005 0.07635961 0.09972334 0.1994667 0.0170487 1.3E-3<br>pe) Ce τ i[s]: 3.4E-5 1.9E-4 2.1E-3 0.01129602 e 0.08484332 1.853814<br>0 | | | | | [ | ft ff 1E-4 |<br>| S e<br>10 11 12 13 14 15 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. Typical IGBT transient thermal impedance<br>gate-emitter voltage ( D = t p/T)<br>( V CE 400V, start at T j 150°C)<br>t SC thJC<br>Z<br>**----- End of picture text -----**<br>
11
IGW40N60TP
TRENCHSTOP[TM] �P erformance �Series
**==> picture [146 x 65] intentionally omitted <==**
## **Package Drawing PG-TO247-3**
12
Rev.�2.1,��2016-02-05
IGW40N60TP
TRENCHSTOP[TM] �P erformance �Series
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## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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Figure D.
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Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
13
Rev.�2.1,��2016-02-05
IGW40N60TP
## TRENCHSTOP[TM] P erformance
|Revision History|||
|---|---|---|
|IGW40N60TP|||
|Revision: 2016-02-05,|Rev. 2.1||
|Previous Revision|||
|Revision<br>Date||Subjects(major changes since last revision)|
|2.1<br>-||Release final datasheet|
## party.
## **Warnings**
14
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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