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IGW40N60H3FKSA1
IGBT, 80 A, 1.95 V, 306 W, 600 V, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP Series
- Power Dissipation: 306W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.95V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.66 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## IGBT IGW40N60H3 ## IGW40N60H3 **Features:** TRENCHSTOP[TM] * very low V CEsat http://www.infineon.com/igbt/ **Applications:** **==> picture [116 x 220] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>_*<br>es<br>, &<br>7<br>G<br>C<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IGW40N60H3|600V|40A|1.95V|175°C|G40H603|PG-TO247-3| 2 IGW40N60H3 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�third�generation ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 3 Rev.�2.3,��2014-03-12 IGW40N60H3 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�third�generation ## **Maximum�ratings** |**Maximumratings**||||| |---|---|---|---|---| |**Parameter**|**Symbol**||**Value**|**Unit**| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||80.0<br>40.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||160.0|A| |Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||160.0|A| |Gate-emitter voltage|_V_GE||±20|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||306.0<br>153.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**|||||| |---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**| |**Characteristic**|||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.49|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=2.00mA|600|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=150°C<br>_T_vj=175°C|-<br>-<br>-|1.95<br>2.30<br>2.50|2.40<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.58mA,_V_CE=_V_GE|4.1|5.1|5.7|V| |Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>3000.0|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|24.0|-|S| Rev.�2.3,��2014-03-12 4 IGW40N60H3 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�third�generation ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2194|-|pF| |Output capacitance|_C_oes||-|82|-|| |Reverse transfer capacitance|_C_res||-|65|-|| |Gate charge|_Q_G|_V_CC=480V,_I_C=40.0A,<br>_V_GE=15V|-|223.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| |Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|235|-|A| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=7.9Ω,_L_σ=90nH,<br>_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IKW40N60H3) reverse<br>recovery.|-|19|-|ns| |Rise time|_t_r||-|33|-|ns| |Turn-off delaytime|_t_d(off)||-|197|-|ns| |Fall time|_t_f||-|21|-|ns| |Turn-on energy|_E_on||-|1.10|-|mJ| |Turn-off energy|_E_off||-|0.58|-|mJ| |Total switchingenergy|_E_ts||-|1.68|-|mJ| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=7.9Ω,_L_σ=90nH,<br>_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IKW40N60H3) reverse<br>recovery.|-|19|-|ns| |Rise time|_t_r||-|29|-|ns| |Turn-off delaytime|_t_d(off)||-|227|-|ns| |Fall time|_t_f||-|22|-|ns| |Turn-on energy|_E_on||-|1.33|-|mJ| |Turn-off energy|_E_off||-|0.79|-|mJ| |Total switchingenergy|_E_ts||-|2.12|-|mJ| Rev.�2.3,��2014-03-12 5 High speed switching series third generation IGW40N60H3 **==> picture [476 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>POI TT RSS<br>100<br>100 maa : PHSSASShee eet<br>_ _ PP AS el<br>80 tp=1µs<br>: MULTI) ¢ EeeS<br>é a | é Dh TBR |<br>10 10µs<br>a RITN“h \ a ee 50µs eeail<br>3 / ah 3 J RH<br>x 60 XQ N\A \ ; | Hat rte NT<br>100µs<br>fe Pat a PT ee eT et ST<br>2 THN \ A ate el<br>200µs<br>: 40 va LIN \ Sf eT es Si<br>8 : SY 1 500µs Till<br>TC=80° ALT sii SAT 8 eet ae<br>DC<br>TC=110°<br>20 Teil aeiil a tli \\ eea a et ee ee<br>TC=80°<br>sere| \. AYTN eea ee ee ll<br>TC=110°<br>oll hi MN ELI LE<br>0 0.1<br>1 10 100 1000 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T j 175°C; V GE=15V)<br>( T j ≤ 175°C, D =0.5, V CE =600V, V GE=15/0V,<br>r G=7,9 Ω )<br>I C I C<br>**----- End of picture text -----**<br> **==> picture [474 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 325 80<br>300<br>70<br>275<br>250<br>SSE 60 PKL ff<br>> 225<br>PENSE6ee 200 | \r| ESPbEiad 50 NC\<br>< a<br>op) 175<br>Nee<br>40<br>150<br>=Pe 125 | |LN} a8 30 \<br>100<br>20<br>75<br>50<br>10<br>25<br>HEN LEE<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>P tot I C<br>**----- End of picture text -----**<br> > Figure 3. Power **temperature** ( _T_ j ≤ 175°C) Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C) 6 IGW40N60H3 **==> picture [474 x 651] intentionally omitted <==** **----- Start of picture text -----**<br> 160 120<br>140 VGE=21V VGE=21V<br>Ly] 100 [LL<br>19V 19V<br>120<br>17V 17V<br>EVA. 15V 80 | Sy 15V<br>PL oFy<br>100<br>| 13V |) 13V oe ee<br>11V 11V<br>80 60<br>| PEgIe Ss! | ESR<br>9V FE 9V<br>FE Dlg le | Do<br>60 7V 7V<br>40<br>5V 5V<br>40<br>20<br>20<br>P A S S ) L A SS<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T j=25°C) ( T j=175°C)<br>140 4.0<br>Tj=25°C IC=20A<br>f Tj=175°C F] IC=40A<br>IC=80A<br>120 EY) s fa<br>100 + ++45 § 3.5 LE ee<br>3.0<br>ef 80 Yee Lae<br>2.5<br>Qeeeenl seeeeees<br>60<br>Bee Ee<br>2.0<br>Ppp<br>40<br>Soe Aree} ge fof<br>7 1.5<br>20<br>ee ae ee<br>S AFE EE<br>0 1.0<br>5 6 7 8 9 10 11 12 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 7. Figure 8.<br>( Typical V CE=20V) transfer characteristic wypica on of of junction tonpersture voltage as<br>I C I C<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> > Figure 8. wypica on of of junction tonpersture voltage as ( _V_ GE=15V) 7 ~~High speed switching series third generation~~ IGW40N60H3 **==> picture [471 x 319] intentionally omitted <==** **----- Start of picture text -----**<br> td(off)<br>tf<br>ot=t | ty rt | _ td(on) — tT [tt]<br>tr<br>td(off)<br>tf<br>td(on)<br>my = 100 a tr my<br>l<br>u=F a a ul= 100 a<br>g Po a<br>z fer) gEz Pott<br>B fo Be<br>ee A eee<br>2 Ps : ee ee cca<br>‘J 7<br>| : Ss: epeeeer | iter_-- - : ~<br>/ ; | Lf<br>/<br>/<br>10 10<br>10 20 30 40 50 60 70 80 0 5 10 15 20 25<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>r G=7,9 , test circuit in Fig. E) I C =40A, test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br> **==> picture [474 x 313] intentionally omitted <==** **----- Start of picture text -----**<br> 6.0<br>typ.<br>min.<br>—[ [TT i, 5.5 f = max.<br>td(off) EK ET<br>5.0<br>tf<br>td(on)<br>z 100 tr : ~<br>= | a ™<br>0 a © ) 4.5 > ~~ =<br>4.0<br>= 3.5 Sy<br>E 3.0 S<br>eeorc ¢ ‘<br>2.5<br>10 2.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>Figure 11. Typical switching times as a function of Figure 12. Gate-emitter threshold voltage as a<br>junction temperature of junction junction temperature<br>(ind. load, V CE =400V, V GE =15/0V, I C=40A, ( I C=0,58mA)=0,58mA)<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 12. Gate-emitter of junction junction ( _I_ C=0,58mA)=0,58mA) **==> picture [26 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> r G=7,9<br>**----- End of picture text -----**<br> 8 IGW40N60H3 **==> picture [471 x 321] intentionally omitted <==** **----- Start of picture text -----**<br> 6 4.0<br>Eoff Eoff<br>Eon Eon<br>Ets 3.5 Ets<br>5 , °<br>> ><br>3.0<br>Ww Ww ue<br>7)o 4 2 7)o a<br>2.5<br>—! “ 7 a<br>O / ’ O aa<br>ow ra ’ ow a<br>3 2.0<br>uwZz “; ¢ 3 imZz ”= uc 2<br>Ww v , ¢ Ww ce ac<br>Zz / “ Zz 1.5 2<br>2<br>1.0<br>1<br>a “ly i ® Pee<br>0.5<br>0 0.0<br>10 20 30 40 50 60 70 80 0 5 10 15 20 25<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>r G=7,9=7,9 , test circuit in Fig. E) I C =40A, test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br> _r_ G=7,9=7,9 **==> picture [474 x 321] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5 3.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>2.5<br>2.0<br>op) op) a<br>Ww Ww<br>ep)7) 7)ep) 2.0<br>eo) eo)<br>—! 1.5 —!<br>O O “<br>fag fag ce va<br>Ww Ww 1.5 7<br>Z Z oa<br>Ww Ww | ue<br>z 1.0 Zz a Ul<br>1.0<br>0.5<br>; ee<br>0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(ind load, V CE =400V, V GE =15/0V, I C=40A, (ind. load, T j =175°C, V GE =15/0V, I C=40A,<br>r G=7,9 , test circuit in Fig. E) r G=7,9 , test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br> 9 IGW40N60H3 **==> picture [471 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>120V<br>480V<br>14<br>1000<br>12<br>Wu / 7 Sa Cies |<br>U) / ’ _ eea ee Coes | [|] —<br>fe)a 10 ; ‘ Sim e e Cres<br>S / oO |, | ]<br>uu = 8 es bE NS<br>S <x St<br>UW 6 oO0 100 ee“ ~-.<br>HWE < — ee<br>< - a es al<br>a eee<br>4<br>2<br>0 10<br>0 50 100 150 200 250 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> Figure 17. Typical ( _I_ C=40A) Figure 18. **==> picture [18 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( V GE<br>**----- End of picture text -----**<br> **==> picture [471 x 312] intentionally omitted <==** **----- Start of picture text -----**<br> 560 15<br>520<br>ee ee SRRRREEEEE<br>480<br>12<br>: Az Littit tit tt<br>440<br>petit5 / AeE RePN<br>BP 400 A 0Zz ~<br>ia ee 9 EON<br>360<br>2 / kK N<br>= 2 a<br>TPT<br>320<br>e P rye é LE] PN<br>fiLY] aN<br>280<br>/ 3 6 ™<br>O w N<br>240<br>Pilly ys Py ys<br>O / =<br>z 200 S<br>L 7p) 3<br>P| so<br>160<br>“ TPEEEEEEE OLLIE<br>120<br>80 0<br>10 12 14 16 18 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 19. Typical short circuit collector current as a Figure 20. Short circuit withstand time as a function<br>function of gate-emitter voltage gate-emitter voltage<br>( V CE 400V, start at T j=25°C) ( V CE 400V, start at T j 150°C)<br>I C(SC) t SC<br>**----- End of picture text -----**<br> 10 High speed switching series third generation IGW40N60H3 **==> picture [235 x 248] intentionally omitted <==** **----- Start of picture text -----**<br> D=0.5<br>nms 0.1 erasePO ees)eCett 0.20.1 ec<br>o a ee | CU TT<br>a a| 0.05<br>= 0247) 0.02<br>Z ae a 0.01 HN<br>=eM = Aoec single pulse il<br>0.01 aMT<br>oon ooo<br>7 COIZe<br>amZo AwisiiPUIUIE ralA atTM| atTT= Rgm cote, n nm cantare aiiRo Ll]Ili<br>i: UE 1 ETAT 2 ET 3 TT 4 TOOT 5 TT<br>ri[K/W]: 0.02540725 0.09179841 0.1302573 0.1893012 0.0532358<br>τ i[s]: 1.3E-5 1.3E-4 1.4E-3 0.01830399 0.1308576<br>0.001<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>Figure 21. IGBT transient thermal impedance<br>( D = t p/T)<br>thJC<br>Z<br>**----- End of picture text -----**<br> 11 IGW40N60H3 **==> picture [146 x 65] intentionally omitted <==** High�speed�switching�series�third�generation ## PG-TO247-3 12 Rev.�2.3,��2014-03-12 IGW40N60H3 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�third�generation **==> picture [250 x 529] intentionally omitted <==** **----- Start of picture text -----**<br> v GE (t)<br>90% V GE<br>t<br>i C (t)<br>90% I C 90% I C<br>10% I C 10% I C t<br>v CE (t)<br>t<br>t d(off) t f t d(on) t r<br>v GE (t)<br>90% V GE<br>10% V GE t<br>i C (t)<br>2% I C t<br>v CE (t)<br>2% V CE t<br>t 1 t 2 t 3 t 4<br>**----- End of picture text -----**<br> **==> picture [37 x 39] intentionally omitted <==** **----- Start of picture text -----**<br> a b<br>a b<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [167 x 59] intentionally omitted <==** **==> picture [107 x 109] intentionally omitted <==** 13 Rev.�2.3,��2014-03-12 IGW40N60H3 ## IGW40N60H3 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |2.1|2010-06-14|Release of final datasheet| |2.2|2013-12-10|New value ICES max limit at 175°C| |2.3|2014-03-12|Max ratings Vce, Tvj ≥25°C| ## **Information** ## **Warnings** endangered. 14
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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