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IGW30N60H3FKSA1
IGBT, 60 A, 1.95 V, 187 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 187W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 60A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.95V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.06 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## IGBT
IGW30N60H3
## IGW30N60H3
**Features:** TRENCHSTOP[TM] * very low V CEsat
http://www.infineon.com/igbt/ **Applications:**
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C<br>G<br>E<br>_*<br>es<br>y =<br>7<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGW30N60H3|600V|30A|1.95V|175°C|G30H603|PG-TO247-3|
2
IGW30N60H3
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## High�speed�switching�series�third�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3
Rev.�2.2,��2014-03-12
IGW30N60H3
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## High�speed�switching�series�third�generation
## **Maximum�ratings**
|**Maximumratings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||60.0<br>30.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||120.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||187.0<br>94.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.80|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=2.00mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.95<br>2.30<br>2.50|2.40<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.43mA,_V_CE=_V_GE|4.1|5.1|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>2000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|16.0|-|S|
Rev.�2.2,��2014-03-12
4
IGW30N60H3
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## High�speed�switching�series�third�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1630|-|pF|
|Output capacitance|_C_oes||-|107|-||
|Reverse transfer capacitance|_C_res||-|50|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=30.0A,<br>_V_GE=15V|-|165.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|160|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=10.5Ω,_L_σ=95nH,<br>_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IKW30N60H3) reverse<br>recovery.|-|21|-|ns|
|Rise time|_t_r||-|33|-|ns|
|Turn-off delaytime|_t_d(off)||-|207|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|0.94|-|mJ|
|Turn-off energy|_E_off||-|0.44|-|mJ|
|Total switchingenergy|_E_ts||-|1.38|-|mJ|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=10.5Ω,_L_σ=95nH,<br>_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IKW30N60H3) reverse<br>recovery.|-|20|-|ns|
|Rise time|_t_r||-|30|-|ns|
|Turn-off delaytime|_t_d(off)||-|239|-|ns|
|Fall time|_t_f||-|23|-|ns|
|Turn-on energy|_E_on||-|1.12|-|mJ|
|Turn-off energy|_E_off||-|0.60|-|mJ|
|Total switchingenergy|_E_ts||-|1.72|-|mJ|
Rev.�2.2,��2014-03-12
5
IGW30N60H3 High speed switching series third generation
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80<br>100<br>70 T_TAa M =| TT a ey (31 RSE<br>OTE Eo AE<br>60<br>—< f LUIE V NUs ogiSo<br>e l = SanDy e ceanll,<br>50 tp=1µs<br>10<br>oepeera aa alll<br>10µs<br>6 WK ||) N oe ee ay see eeeae<br>orSt 40 [LTALZANTAY LTT) 2o etie 50µs ee eaNSIlll<br>AINE AT TTT 8 Fy Iere<br>oS 100µs ren aT<br>30 oF TTIW DEON VT 0 Ee<br>4 eT eT<br>Ooa | IY, /| NAas Z| \ ei4 1 200µs pp wee = WII:<br>- TC=80° YW VY ~\ Oo ee 500µs<br>20 ACA LATEST] SSS SSS<br>PCT TC=110° L SNOT FE DC Ht<br> A\| A IN a ll<br>10 TC=80° Ae COSA<br>TC=110° if<br>ill<br>0 0.1<br>1 10 100 1000 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T j 175°C; V GE=15V)<br>( T j ≤ 175°C, D =0.5, V CE =400V, V GE=15/0V,<br>r G=10,5 Ω )<br>200 60<br>KEE<br>175<br>|<br>50<br>{Xt 150<br>=, <x<br>40<br>ei 125 oN fg<br>7 3<br>SEEN<br>EENv= 10075 \ 6 30<br>20<br>ee<br>50<br>10<br>25<br>po<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>
> Figure 3. Power **temperature** ( _T_ j ≤ 175°C)
Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C)
6
High speed switching series third generation IGW30N60H3
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120 120<br>pe VGE=20V | VGE=20V IY<br>100 100<br>es 17V er Ae ee ee 17V ee ee<br>15V 15V<br>; Hy |). (<br>. 80 13V Hy E 80 13V n/a<br>11V 11V<br>9V 9V<br>60 60<br>: mp A iy A<br>7V 7V<br>5V 5V<br>40 40<br>Se NG) Qn NY,<br>20 20<br>Nee AN<br>Jn<br>0 | 0 AEX<br>0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T j=25°C) ( T j=175°C)<br>I C I C<br>**----- End of picture text -----**<br>
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100 4.0<br>Tj=25°C IC=15A<br>90 Tj=175°C IC=30A<br>IC=60A<br>sy, ST<br>3.5<br>80<br>pT Ti | | fg 4<br>70<br>e f ag] e e<br>3.0<br>60<br>50 2.5<br>Ss fo | fe dE<br>mm 40 O<br>2.0<br>30<br>fA 8<br>9 20 Po | Ee ; P] fy ie<br>1.5<br>ALT © pt<br>10<br>peytrerA LILLE<br>0 1.0<br>5 6 7 8 9 10 11 12 0 25 50 75 100 125 150 175<br>V GE ,GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
( _V_ GE=15V)
7
IGW30N60H3
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**----- Start of picture text -----**<br>
—— 1000 a<br>td(off) td(off)<br>tf tf<br>td(on) td(on)<br>tr tr<br>Qe — | —< a—<—<—ee<br>> a e<br>Z a<br>ta 100 ta<br>=aa<br>gSaOo 100<br>Oo 8<br>Se ee ne eeDC 2<br>2v<br>SfueB<br>PER * ee<br>po [eeficbchsPA)] Ee<br>7<br>10 10<br>5 16 27 38 49 60 3 8 13 18 23 28 33<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>r G=10,5 , test circuit in Fig. E) I C =30A, test circuit in Fig. E)<br>7<br>y— td(off) —_ typ.<br>tf min.<br>| td(on) max.<br>tr —<br>ee [eee:] Ww 6<br>|<br>fe) —<br>= ;<br>(0= 100 a a a M7)So) 5 Pe oN<br>F a ee ee Ww<br>Oo a a<br>4<br>Lu . ‘ ~<br>a .<br>3<br>10 2<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>Figure 11. Typical switching times as a function of Figure 12. Gate-emitter threshold voltage as a<br>junction temperature of junction temperature<br>(ind. load, V CE =400V, V GE =15/0V, I C=30A, ( I C=0.43mA)=0.43mA)<br>t t<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
( _I_ C=0.43mA)=0.43mA)
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**----- Start of picture text -----**<br>
r G=10,5<br>**----- End of picture text -----**<br>
8
IGW30N60H3
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**----- Start of picture text -----**<br>
5 3.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>2.5<br>~ 4 fo l tl, E<br>7p)ep f e 7p)dg<br>Ww Ww<br>7)o , 7)o 2.0<br>ett ea’<br>—! 3 / —!<br>4 Vv ) -<br>PL<br>O)Ww | or 1.5 . Lee -<br>Zz 5 Ww at —<br>et , z aw ae<br>2<br>Z / a (u)Z _ 7<br>oO arr ef - ae<br>1.0<br>Sp Lae Ee fe<br>1 2 Z — | -<br>°- tat tiet| 8 0.5 —<br>eer4 aT I ~<br>0 0.0<br>ert tT Tt<br>5 10 15 20 25 30 35 40 45 50 55 60 3 8 13 18 23 28 33<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>r G=10,5=10,5 , test circuit in Fig. E) I C =30A, test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
_r_ G=10,5=10,5
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**----- Start of picture text -----**<br>
2.0 2.5<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>2.0<br>1.5<br>Ww Ww<br>7) 7) a<br>ep) ep) a<br>oO—! Oa 1.5 ot“<br>O 19) -<br>a a oa<br>Ww 1.0 Ww<br>Z Z ue<br>ef ee] eZee<br>1.0<br>Z Z ae uc<br>i I en ule<br>=Bp 0.5 __ | i =yg fe ma a ee<br>0.5<br>0.0 0.0<br>0 25 50 75 100 125 150 175 200 250 300 350 400 450<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(ind load, V CE =400V, V GE =15/0V, I C=30A, (ind. load, T j =175°C, V GE =15/0V, I C=30A,<br>r G=10,5 , test circuit in Fig. E) r G=10,5 , test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
9
IGW30N60H3
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**----- Start of picture text -----**<br>
16 | ’<br>120V<br>480V ) a<br>14 Ed.<br>YY) Ree)<br>/ ra 1000 e a e<br>12<br>Ww ry Cs Cies az<br>) / _ Es Coes ||<br>Cres<br>< 10 / ‘ ra ee |<br>ow - H mA<br>ul 8 fT | < i —<br>100<br>in & es ee ee<br>WH 6 O a<br>O) a ee<br>4<br>2<br>0 10<br>0 20 40 60 80 100 120 140 160 180 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 17. Typical ( _I_ C=30A)
Figure 18.
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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
380 15<br>nee<br>330<br>12<br>: Ate Lititt itt<br>petit ye Re<br>5 / E PN<br>O 280 a - ee<br>: | a SEE<br>9<br>By2 BELEN EL<br>es 2 a<br>230<br>e TTP é EEL PN<br>: fiAy ~<br>6<br>ge 3 ><br>:eee: 180 Ti}ztc |ee {tiet eit tRsaN<br>: e {ttt<br>3<br>a ae<br>130<br>“ TYEPPPPererey} LLP EEE EL<br>80 0<br>10 12 14 16 18 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC) t SC<br>**----- End of picture text -----**<br>
Figure 19. Typical short circuit function of gate-emitter ( _V_ CE 400V, start at _T_ j=25°C)
Figure 20.
( _V_ CE 400V, start at _T_ j 150°C)
10
~~High speed switching series third generation~~ IGW30N60H3
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1<br>et<br>cK<br>= PTT TT Tn eer TT TTT<br>S et<br>D=0.5<br>cag a Ne elt<br>4 aeRUE 0.2 Sam<br>6 0.1 V. 0.1 Mil<br>Wy tte<br>0.05<br>= oT a<br>0.02<br>7 CHT. CTT<br>x a<br>0.01<br>2 / | ||<br>single pulse<br>us Ae<br>Sy area se a<br>ANN<br>Gi 0.01 dl)<br>D eet eee<br>ce= ESTHET”a a GHG ziInit<br>- PAM TI TIN ct Carafe Ill<br>i: 1 2 3 4<br>j p ri[K/W]: 0.05279329 0.1938242 ee 0.2577884 0.2956575<br>τ i[s]: 6.5E-5 4.7E-4 6.1E-3 0.06477749<br>0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>Figure 21. IGBT transient thermal impedance<br>( D = t p/T)<br>thJC<br>Z<br>**----- End of picture text -----**<br>
11
IGW30N60H3
**==> picture [146 x 65] intentionally omitted <==**
High�speed�switching�series�third�generation
## PG-TO247-3
12
Rev.�2.2,��2014-03-12
IGW30N60H3
**==> picture [146 x 65] intentionally omitted <==**
## High�speed�switching�series�third�generation
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**----- Start of picture text -----**<br>
v GE (t)<br>90% V GE<br>t<br>i C (t)<br>90% I C 90% I C<br>10% I C 10% I C t<br>v CE (t)<br>t<br>t d(off) t f t d(on) t r<br>v GE (t)<br>90% V GE<br>10% V GE t<br>i C (t)<br>2% I C t<br>v CE (t)<br>2% V CE t<br>t 1 t 2 t 3 t 4<br>**----- End of picture text -----**<br>
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a b<br>a b<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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13
Rev.�2.2,��2014-03-12
IGW30N60H3
## IGW30N60H3
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2010-07-26|Preliminarydatasheet|
|2.1|2013-12-10|New value ICES max limit at 175°C|
|2.2|2014-03-12|Max ratings Vce, Tvj ≥25°C|
## **Information**
## **Warnings**
endangered.
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Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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